Co/Cu92Mn8/Co结构中的低场巨磁电阻研究

对三明治结构的Co/Cu/Co和Co/Cu₉₂Mn₈/Co系列的巨磁电阻效应进行了研究,发现两者的巨磁电阻均随中介层厚度作周期性振荡,但是接近反相.作为与Co/Cu/Co系统的比较,发现若在Cu基中稀释Mn原子,巨磁电阻随外磁场变化的曲线会有非常大的改变,同时饱和场或开关场也有较大的下降,这意味着有可能为Co/Cu金属多层膜的巨磁电阻的实用化研究开辟出一条新的思路. 关键词：     

Magnetic and magnetotransport properties in Co5Cu95 melt-spun alloys

Giant magnetoresistance (GMR) has been observed in Co₅Cu₉₅ alloys fabricated by melt-spinning. The highest MR change of 28.0% occurs for Co₅Cu₉₅ after annealing at 450°C for 30 min. Based on the super-paramagnetic assumption, the average size of Co particles embedded in Cu matrix, ranging from 3.0 to 6.0 nm, has been determined by simulating the magnetization curves at 295 K which is higher than the blocking temperatures for the samples. Comparison with phenomenological theory for GMR indicates that the interfacial spin-dependent scattering is the dominant scattering mechanism underlying GMR origin in granular systems. Additionally, for the samples in as-quenched state or annealed at temperatureT _A=350°C, the electron hybridization and super-paramagnetic behaviors of fine Co particles may be responsible for the low value of MR change.     

Absolute magnetometry on ultrathin 3d-metal films by UHV-SQUID

Recently a combination of SQUID magnetometry with an UHV chamber and cooling capabilities was developed. This allows us to measure the remanent magnetization in statu nascendi with submonolayer sensitivity. Co and Ni films 2–20 monolayers (ML) thick were grown on Cu(0 0 1) and measured at temperatures between 40 and 300 K. We deduced separately surface and interface magnetic moment contributions by analyzing thickness-dependent moments of Co/Cu(0 0 1) and Cu/Co/Cu(0 0 1). The surface atoms are shown to carry a 32(5)% enhanced moment, while the interface moment is reduced by 17%. For the case of Ni thin films, the magnetization is almost bulk-like. Cu capping reduces the magnetization by 22% at 4 ML film thickness.     

Temperature dependence of switching field distribution in a NiFe wire with a pad

The distribution of switching fields (H_sw) in a NiFe wire was investigated as a function of temperature between 5 and 300 K. The sample structure under investigation is Ta/NiFe/Cu/NiFe wire (150 nm width) connecting to a square pad (large area) at an end. Magnetization reversal phenomena are very sensitively detected using the giant magnetoresistance effect. With repeating magnetoresistance measurements, we obtained a histogram of H_sw with three narrow peaks at each temperature. The origin of three peaks can be attributed to the existence of three different kinds of magnetic domain structures at the pad area, which was confirmed by magnetic force microscopy observation.     

IrMn基反铁磁自旋阀的巨磁电阻效应

用第一性原理方法研究了在微观尺度具有三重对称磁结构的IrMn合金的反铁磁自旋阀(AFSV)的电子输运.研究表明:基于有序L1₂相IrMn合金的Co/Cu/IrMn自旋阀的巨磁电阻(GMR)效应具有三重对称性,可以利用这一特性区分反铁磁材料的GMR与传统铁磁材料的GMR.基于无序γ相IrMn合金的IrMn(0.84 nm)/Cu(0.42 nm)/IrMn(0.42 nm)/Cu(0.42 nm)(111) AFSV的电流平行平面构型的GMR约为7.7％,大约是电流垂直平面构型的GMR(3.4％)的两倍,明显大于实验中观测到的基于共线磁结构的FeMn基AFSV的GMR. 关键词： 反铁磁自旋阀 巨磁电阻效应 非共线磁结构 电流平行平面结构     

Magnetic properties and giant magnetoresistance in electrodeposited Co–Ag granular films

Small cobalt particles embedded in a silver matrix have been prepared using the electrodeposition technique. The size of the clusters is controlled by the deposition potential and the Co growth time. Structural, magnetic and magneto-transport properties of Co–Ag samples have been investigated as a function of the Co concentration between 2 and 40 at% cobalt. Superparamagnetic behavior is evidenced for the low contents of cobalt while long-range magnetic order appears at higher Co concentrations. The particles size has been determined from magnetic properties and from the X-ray diffraction technique, and varies between 3.5 and 9 nm. Magnetoresistance passes through a maximum as a function of the cobalt concentration. A maximum of ∼4% GMR is obtained at room temperature while GMR reaches a value of 14% at 10 K.     

Effect of the structural quality of the buffer on the magnetoresistance and the exchange coupling in sputtered Co/Cu sandwiches

The effect of the structural quality of the buffer stack on the structural properties, giant magnetoresistance (GMR) and the quality of the antiferromagnetic coupling has been investigated for Co/Cu/Co sandwiches prepared by DC-magnetron sputtering. Three kinds of buffers were employed: type A: Cr(6 nm)/Co(0.8 nm)/Cu(10 nm), type B: Fe(6 nm)/Co(0.8 nm)/Cu(10 nm) and type C: Cr(4 nm)/Fe(3 nm)/Co(0.8 nm)/Cu(10 nm). For B and C type buffers, the antiferromagnetic alignment is very interesting at zero field with a coupling strength larger than 0.4 erg/cm² and a GMR signal reaching 5% at room temperature. However, for the A type buffer the antiferromagnetic coupling completely disappears, while the GMR drops to about 0.8%. X-ray diffraction, atomic force microscopy and transmission electron microscopy have been performed in order to understand the origin of the observed difference in the magnetic properties. The results show a strong difference in the average surface roughness, 1.15 nm and 0.35 nm, respectively for the A and C types buffers, and demonstrate that the quality of the surface of the buffer is the key to optimize both the GMR and the indirect exchange coupling. Received 11 July 2000     

Thermal stability of spin valve sensors using artificial Co/Ir based ferrimagnets

Hard-soft spin valve structures have been grown by molecular beam epitaxy on MgO(0 0 1) substrates. The hard magnetic layer consists of an artificial Co/Ir/Co ferrimagnet system (AFi), while a Fe/Co bilayer from the buffer has been used as a soft detection layer. The Fe layer has been grown at 600°C giving rise to a monocrystalline layer with a BCC structure. Consequently, this layer presents a hard and a easy magnetization axis, respectively, along the BCC [1 1 0] and the [1 0 0] directions. The AFi system presents dramatic differences after successive annealing steps up to 350°C. An increase of the GMR from 3% to 3.5% is observed after annealing at 250°C while the coercive field of the AFi and the GMR plateau are strongly reduced. After further annealing at higher temperature the GMR drops down accompanied with a strong decrease in the antiparallel alignment amount in the AFi system. Rutherford back scattering measurements have been performed to investigate the changes in the interface morphology and to correlate it to the magneto-transport properties.     

Preparation and microstructures of CoAg granular films with giant magnetoresistance

A series of Co _x Ag_1–x (0 x < 100 at.%) granular films were deposited onto glass substrates with the thickness on the order of 400 nm using the ion-beam cosputtering technique at different substrate temperatures. Systematical investigations were made on the Giant MagnetoResistance (GMR) effect and microstructures in these thin granular films. The magnetoresistance ratio strongly depends on cobalt concentration, substrate temperature, and the optimal value of GMR was observed in Co₂₂Ag₇₈ sample prepared at a temperature of 300 K. Microstructures of these films are closely related to the fabricating process, and thus influence the GMR.     

Electrodeposition and characterization of Cu/Co multilayers: Effect of individual Co and Cu layers on GMR magnitude and behavior

The present work discusses the successful electrodeposition of Cu/Co multilayers, exhibiting appreciable GMR of 12-14% at room temperature. The effect of individual Cu and Co layers on the magnitude and behavior of GMR has been studied. By varying the thickness of individual layers the field at which saturation in GMR is observed can be controlled. It was observed that for lower thicknesses of Co layer, the saturation fields are reduced below 1 kOe. The Cu layer thickness seems to control the nature of magnetic coupling and the saturation field, with the two showing a correlation.     

STM studies on the growth of monolayers: Co on Cu(110) with one half monolayer of preadsorbed oxygen

The growth of the first cobalt monolayer (ML) on the Cu(110)-(2×1)O surface was studied by scanning tunneling microscopy. Extensive exchange of Cu and Co atoms takes place in the first stages of the deposition. The displaced Cu atoms form new Cu---O---Co mixed islands, with the same structure as those of the terrace surface. At 0.25 ML Co, a new structure nucleates, which contains three Cu atoms, four Co atoms and two O atoms per 2×2 cell. The structure consists of rows in the [ 10] direction with an internal periodicity of two lattice units. The rows are separated from one another by two lattice units along the [001] direction, and are found both in-phase and out-of-phase relative to one another. The result is a mixed p(2×2) and c(2×4) surface. The fraction of the surface covered by the new structure increases with Co coverage, and completely covers the surface at 1 ML Co.     

Perpendicular giant magnetoresistance in magnetic multilayered nanowires

We present giant magnetoresistance (GMR) measurements performed on electrodeposited Co/Cu multilayered nanowires. The variation of the GMR with the thicknesses of the Cu and Co layers over wide ranges is discussed in the framework of the Valet-Fert model for perpendicular GMR. The interface and bulk spin-dependent scattering parameters as well as the spin diffusion lengths in the nonmagnetic and ferromagnetic layers are extracted from this analysis.     

Giant magnetoresistance and magnetothermopower in Co/Cu multilayers

The thermopower (Seebeck coefficient, S) has been measured on a series of Co/Cu multilayers that exhibit giant negative magnetoresistance (GMR). Negative in zero applied field, S(H) increases in magnitude as the field is increased, approaching that of bulk Co. The change in S is inversely proportional to the resistance of the sample which is, in turn, proportional to the square of the magnetization. A model is presented that yields both the GMR and S(H) from the spin-split density of states of the Co without the need of a spin-dependent scattering potential at the interfaces.     

The temperature dependence of the perpendicular giant magnetoresistance in Co/Cu multilayered nanowires

A theory, based on earlier work by Valet and Fert, is first presented to describe the influence of temperature on the perpendicular giant magnetoresistance (GMR) in multilayers. Then we present GMR measurements performed at T=77 K and at room temperature on Co/Cu multilayered nanowires with layer thicknesses ranging from a few nm to 1 μm. We use our model to obtain a good quantitative fit to the experimental results in both the short spin diffusion length limit and out of this limit. We discuss the temperature dependence of the bulk parameters, the scattering spin asymmetry coefficient and spin diffusion length in the Co layers. Received: 25 January 1998 / Accepted: 6 May 1998     

Well-defined Co clusters embedded in an Ag matrix: A model system for the giant magnetoresistance in granular films

Well-defined granular Co/Ag films have been prepared by the co-deposition of in-beam prepared Co clusters and Ag atoms. In this way we were able to study the giant magnetoresistance (GMR) as a function of mean Co cluster size for a fixed Co cluster volume fraction v_cl as well as a function of v_cl for a fixed . Mean Co cluster size has been varied between and 6.9 nm, Co cluster volume fraction between 5 and 43%. The GMR was measured in-situ at T=4.2 K in magnetic fields 1.2 T. The analysis of the GMR data obtained from these studies clearly shows that spin-dependent scattering at the Co-cluster/Ag-matrix interface is the only relevant scattering mechanism causing the GMR in our well-defined samples. Received: 21 April 1998 / Received in final form: 17 May 1998 / Accepted: 18 May 1998     

Spin valves with CoO as an exchange bias layer

The temperature dependence (50–300 K) of the magnetoresistance and exchange bias field of spin valves with a CoO exchange bias layer have been investigated. At room temperature the GMR effect is enhanced in comparison with spin valves with a FeMn biasing layer. This enhancement increases for decreasing temperature for small Cu thicknesses. No influence of the antiferromagnetism of CoO on the GMR has been observed upon crossing of the Néel temperature.     

Effect of Co substitution on magnetic properties of Sr14Cu24O41

A series samples of Sr₁₄(Cu_1−xCo_x)₂₄O₄₁ (x=0, 0.02, 0.06, 0.14, 0.18) were prepared by standard solid-state reaction. X-ray diffraction measurements show that all the samples are single phase and their lattice parameter hardly changes by Co dopant. Electron diffraction experiments and X-ray photo-emission spectroscopy measurements reveal that Co ions substituted Cu ions in the chain. The measurements of magnetic susceptibility from 10 to 300 K in an applied magnetic field of 1.0 T show that Co dopant induces increase in susceptibility. The spin gaps are observed in all the samples, and decrease with increase in Co doping concentration. Fitting of the date indicates that strong antiferromagnetic interaction is induced and antiferromagnetic dimeried state may be formed due to Co³⁺ ions doping in these compounds.     

Magnetoresistance in granular films formed by CoFe and phase change material

Magnetoresistance having a field and current dependence like that of GMR (but a rather small magnitude) has been observed in Co₇₀Fe₃₀/GeTe and Co₇₀Fe₃₀/Ge₂Sb₂Te₅ granular films. Film stacks were fabricated using tandem (multilayer) deposition and annealing was required for the films to develop the GMR-type response. This GMR-type behavior is distinct from AMR, which is observed before annealing. With films having the structure [CoFe 4 nm/GeTe 6 nm]₁₀, a magnetoresistance (MR) of 0.19 %, which has the GMR-type character can be observed after an optimal annealing temperature of 450 °C. TEM and X-ray reflectometry suggest that columnar granules with layered Fe form during deposition and with annealing. Magnetoresistive transport is believed to be between the discontinuous layers in each columnar grain. These discontinuous layers are observed to be superparamagnetic in SQUID ZFC-FC measurements measured from 5–300 K. Magnetoresistance can be fitted by the quadratic relation appropriate for GMR in granular films, especially at higher GeTe compositions. When Ge₂Sb₂Te₅ is used instead of GeTe, higher anneal temperatures are required before the MR with GMR character appears. This GMR type response does not appear when pure Fe is used instead of the CoFe alloy, with the samples showing only AMR in this case. This is due to the absence of Co which seems to cause a more granular growth.     

Influence of superparamagnetic regions on the giant magnetoresistance of electrodeposited Co–Cu/Cu multilayers

The room-temperature magnetoresistance (MR) of electrodeposited Co–Cu/Cu multilayers was investigated. Samples were prepared on either a polycrystalline Ti foil or on a silicon wafer covered with a Ta buffer and a Cu-seed layer. The field dependence of the magnetoresistance was analyzed by decomposing the GMR into ferromagnetic (FM) and superparamagnetic (SPM) contributions, whereby the field dependence of the latter could be described by a Langevin function. In order to better understand the influence of the deposition conditions on the GMR in electrodeposited multilayers, the evolution of the relative importance of the two GMR contributions is discussed in terms of the Co dissolution process during the Cu deposition pulse.