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1.
Sub-ps laser microstructuring of soft X-ray Mo/Si multilayer gratings   总被引:1,自引:0,他引:1  
The sub-picosecond laser microstructuring of multilayer gratings is presented in this paper. A micromachining system operating with a 0.5 ps KrF laser at 248 nm was used to etch grating structures with a groove width of 1–2 μm in Mo/Si and Si/Mo multilayers. Atomic force microscopy, scanning electron microscopy and X-ray reflectivity were used to characterize the microetched patterns. The ω-scans around the 1st Bragg maximum show symmetric satellites up to 3rd order, with positions corresponding to the grating period. The use of sub-picosecond laser pulses minimizes the thermally affected zone and enhances the quality of the etched features. Short pulse laser processing is advantageous for the fabrication of high spatial resolution microstructures required in X-ray optics. Received: 21 May 2002 / Accepted: 19 August 2002 / Published online: 15 January 2003 RID="*" ID="*"Corresponding author. Email: dpapa@iesl.forth.gr  相似文献   

2.
A 50 cm silver coated hollow fiber with inner diameter of 250 μm and filled with argon has been used to compress optical pulses from a Ti:sapphire laser at 800 nm. Input pulses with energy of 250 μJ and duration of 110 fs were used and compressed pulses with energy of 220 μJ and duration of 20 fs were generated by using a prism compressor. Numerical and experimental results are compared. There is good agreement between the measured beam diameters of the hollow-fiber output pulse and the calculated values obtained from propagation of the HE11 mode into free space. For comparison, a similar uncoated fused-silica hollow fiber was also used to obtain 20 fs compressed pulses with an energy of 190 μJ. Received: 7 September 2002 / Published online: 26 March 2003 RID="*" ID="*"Corresponding author. Fax: +1-780/492-1811, E-mail: mohebbi@ee.ualberta.ca  相似文献   

3.
We report observation of nanostructures formed on thin TiN and DLC films that were irradiated by 800- and 267-nm, femtosecond (fs) Ti:sapphire laser pulses at an energy fluence slightly above the ablation threshold. On the ablated thin-film surfaces, the linearly polarized fs pulses produce arrays of fine periodic structures that are almost oriented to the direction perpendicular to the laser polarization, while the circularly polarized light forms fine-dot structures. The size of these surface structures is 1/10–1/5 of the laser wavelength and decreases with a decrease in the laser wavelength. Received: 3 September 2002 / Accepted: 4 September 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. Fax: +81-778/62-3306, E-mail: yasuma@fukui-nct.ac.jp  相似文献   

4.
Ito  S.  Ishikawa  H.  Miura  T.  Takasago  K.  Endo  A.  Torizuka  K. 《Applied physics. B, Lasers and optics》2003,76(5):497-503
We present a 7-TW Ti:sapphire laser system operating at 50 Hz for laser Compton femtosecond X-ray generation. This laser system delivers 8.4 W of average output power at a repetition rate of 50 Hz with a pulse width of 24 fs. It demonstrates successful management using a dynamically stable resonator in the regenerative amplifier and compensation for thermal lensing by a convex mirror in a ring-type four-pass power amplifier. We also present the results of closed-loop corrections for distorted wavefronts of amplified and compressed laser pulses, using an adaptive optical system consisting of a Shack–Hartmann-type wavefront sensor and a deformable mirror. This closed-loop correction results in dramatic improvements, reducing wavefront distortions below 0.05 λ rms. Received: 31 October 2002 / Revised version: 3 March 2003 / Published online: 5 May 2003 RID="*" ID="*"Corresponding author. Fax: +81-298/61-3349, E-mail: ito@festa.or.jp  相似文献   

5.
Applying the combination of a solid-state Ti:Sa laser system and a newly developed wide-aperture, discharge-pumped KrF amplifier, output pulses with over 9 W average power at 300 Hz have been achieved in a single output beam. The frequency-tripled seed pulses of the Ti:Sa system – delivering approximately 10 μJ energy at 248 nm – were amplified to over 30 mJ using a 3-pass off-axis amplification scheme. The optical set-up has been fitted to the amplifier’s parameters, and stored-energy measurements were carried out with different parameters in order to optimize the operational conditions of the device for the highest average power. Received: 10 June 2002 / Published online: 25 September 2002 RID="*" ID="*"Corresponding author. Fax: +49-551/503-599, E-mail: jbekesi@llg.gwdg.de  相似文献   

6.
Low-threshold field electron emission (FEE) is reported for periodic arrays of micro-tips produced by laser ablation of Si wafers. The best samples show emission at threshold fields as low as 4–5 V/μm for n-type Si substrates and of 1–2 V/μm for p-doped Si substrates, as measured with a flat-screen technique. Auger electron spectroscopy and X-ray electron spectroscopy reveal island-like deviation of the SiO2 stoichiometry on the tip surfaces, with lateral dimensions of less than 100 nm. Microscopic studies using a special field-emission STM show that the emission originates from well-conducting regions of sub-micron size. The experimental data suggest FEE from the tip arrays by a geometric field enhancement of both the individual micro-tip and the narrow conducting channels in the tip body. Received: 3 May 2002 / Accepted: 1 July 2002 / Published online: 28 October 2002 RID="*" ID="*"Corresponding author. Fax: +7-095/135-82-34, E-mail: shafeev@kapella.gpi.ru  相似文献   

7.
Passive mode locking and saturable absorber Q-switching of neodymium lasers at 1.3 μm with PbS-doped phosphate glasses are demonstrated. Q-switched pulses of 120 ns (0.1 μJ) in duration (energy) and the average output power of 3 mW from a quasi-cw diode-pumped Nd3+:KGW laser and ultrashort pulses of a maximum of 250 μJ in energy and 150 ps in duration from a Nd3+:YAP laser were obtained. The bleaching decay rate of the samples was found to increase with the Quantum Dot’s size decreasing due to the enhancement of quantum confinement effects for smaller dots and stronger overlapping of the electron and trap state wave functions. Received: 23 January 2002 / Revised version: 2 April 2002 / Published online: 20 December 2002 RID="*" ID="*"Corresponding author. Fax: +375-17/232-6286, E-mail: savitski@eudoramail.com  相似文献   

8.
The preparation in thin film form of the known icosahedral phase in Ti-Ni-Zr bulk alloys has been investigated as a function of substrate temperature. Films were deposited by pulsed laser deposition on sapphire substrates at temperatures ranging from room temperature to 350 °C. Morphological and structural modifications have been followed by grazing-incidence and θ–2θ X-ray diffraction, transmission electron diffraction and imaging. Chemical composition has been analyzed by electron probe microanalysis. The in-depth variation of composition has been studied by secondary neutral mass spectroscopy. We show that pulsed laser deposition at 275 °C makes the formation of a 1-μm-thick film of Ti-Ni-Zr quasicrystalline textured nanocrystallites possible. Received: 7 June 2001 / Accepted: 18 February 2002 / Published online: 3 June 2002 RID="*" ID="*"Corresponding author. Fax: +33-3/8357-6300, E-mail: brien@mines.u-nancy.fr  相似文献   

9.
Atomic-scale structural changes have been observed in the glass network of fused silica after modification by tightly focused 800-nm, 130-fs laser pulses at fluences between 5 and 200 J cm-2. Raman spectroscopy of the modified glass shows an increase in the 490 and 605-cm-1 peaks, indicating an increase in the number of 4- and 3-membered ring structures in the silica network. These results provide evidence that densification of the glass occurs after exposure to fs pulses. Fluorescence spectroscopy of the modified glass shows a broad fluorescence band at 630 nm, indicating the formation of non-bridging oxygen hole centers (NBOHC) by fs pulses. Waveguides that support the fundamental mode at 633 nm have been fabricated inside fused silica by scanning the glass along the fs laser beam axis. The index changes are estimated to be approximately 0.07×10-3. Received: 17 December 2001 / Accepted: 9 July 2002 / Published online: 25 October 2002 RID="*" ID="*"Corresponding author. Fax: +1-925/423-2463, E-mail: dmkrol@ucdavis.edu  相似文献   

10.
100-W average-power, high-energy nanosecond fiber amplifier   总被引:5,自引:0,他引:5  
We report on the fiber-based amplification of a Q-switched Nd:YAG thin-disk laser. At repetition rates between 3 and 50 kHz output powers up to 100 W are generated. Pulse energies up to 4 mJ, with diffraction-limited beam quality, are generated in a 30-μm Yb-doped large-mode-area fiber, furthermore pulse energies up to 8 mJ are achieved from a multimode fiber amplifier. Received: 8 May 2002 / Revised version: 10 July 2002 / Published online: 25 October 2002 RID="*" ID="*"Corresponding author. Fax: +49-3641/65-7680, E-mail: Jens.Limpert@uni-jena.de  相似文献   

11.
A novel spectral broadening technique, based on hollow-fiber cascading, is reported, which allows the generation of a supercontinuum extending to a bandwidth exceeding 510 THz with excellent spatial beam quality. High-peak-power, sub-7-fs light pulses tunable from the visible to the near infrared have been generated by compression of portions of the supercontinuum, employing different sets of chirped mirrors. Received: 11 July 2002 / Revised version: 3 September 2002 / Published online: 15 November 2002 RID="*" ID="*"Corresponding author. Fax: +39-02/2399-6126, E-mail: mauro.nisoli@fisi.polimi.it  相似文献   

12.
Deep drilling of metals by femtosecond laser pulses   总被引:3,自引:0,他引:3  
Results of recent investigations on deep drilling of metals by femtosecond laser pulses are reported. At high laser fluences, well above the ablation threshold, femtosecond lasers can drill deep, high-quality holes in metals without any post-processing or special gas environment. It is shown that for high-quality drilling of metals, the following processes are important: (1) laser-induced optical breakdown of air containing metal vapor and small metal particles (debris) generated by multi-pulse femtosecond laser ablation, (2) transformation of laser pulses into light filaments, and (3) low-fluence finishing. Received: 15 November 2002 / Accepted: 20 January 2003 / Published online: 28 May 2003 RID="*" ID="*"Corresponding author. Fax: +49-511/2788-100, E-mail: ch@lzh.de  相似文献   

13.
Submicron surface-relief gratings were fabricated on fused silica by F2-laser ablation with nanosecond duration pulses from a high-resolution 157-nm optical processing system. A 157 nm wavelength projection mask was prepared by ArF-laser ablation to form a 20-μm period grating of equal lines and spaces. A 25-fold demagnification of the mask by a Schwarzschild objective generated gratings of an 830-nm period and a 250 nm modulation depth, as characterized by SEM, AFM and HeNe-laser beam diffraction. Received: 24 April 2002 / Accepted: 25 April 2002 / Published online: 4 December 2002 RID="*" ID="*"Corresponding author. Fax: +49-551/503 599, E-mail: jihle@llg.gwdg.de  相似文献   

14.
A simple wet-chemical synthesis and characterization of CuO nanorods   总被引:4,自引:0,他引:4  
Using a simple wet-chemical route, we synthesized CuO nanorods with diameters of ca. 5–15 nm and lengths of up to 400 nm. The purity, crystallinity, morphology, structure features, and chemical composition of the as-prepared CuO nanorods were investigated by powder X-ray diffraction, transmission electron microscopy, high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy. Received: 22 March 2002 / Accepted: 12 June 2002 / Published online: 28 October 2002 RID="*" ID="*"Corresponding author. Fax: +86-25/359-5535, E-mail: wangqun@nju.edu.cn  相似文献   

15.
We report on a passively Q-switched diode-pumped Nd:YVO4 laser polarized along the a axis (corresponding to the smallest value of emission cross section at 1064 nm), generating 157-μJ pulses with 6.0-ns time duration (>20 kW peak power) and 3.6 W of average power at 1064 nm with good beam quality (M2<1.4). The selection of the polarization was performed by a novel technique relying on the birefringence of the laser crystal and on the misalignment sensitivity of the resonator. Received: 30 September 2002 / Revised version: 22 November 2002 / Published online: 19 March 2003 RID="*" ID="*"Corresponding author. Fax: +39-382/422583, E-mail: agnesi@ele.unipv.it  相似文献   

16.
Compressing pulses of a mode-locked extended-cavity Ti:sapphire laser using a standard single-mode fiber and tilted-front-interface chirped mirrors yields phase-stabilized 4-fs, 3-nJ light pulses at the full, 24-MHz, repetition rate. The demonstrated source paves the way towards exploring interactions sensitive to the carrier-envelope-offset phase, such as, for example, photoemission from solid targets at moderate intensities (∼1012 W/cm2). Received: 13 December 2002 / Published online: 26 February 2003 RID="*" ID="*"Corresponding author. Fax: +43-1/58801-38799, E-mail: apolonski@tuwien.ac.at  相似文献   

17.
The backscattered fluorescence of nitrogen from filaments generated by intense ultra-fast Ti:sapphire laser pulses propagating in air is studied. The backscattered fluorescence from N2 molecules and ions show an exponential increase with increasing filament length, indicating amplified spontaneous emission. Received: 11 October 2002 / Revised version: 3 December 2002 / Published online: 26 February 2003 RID="*" ID="*"Corresponding author. Fax: +1-418/6562-623, E-mail: qluo@phy.ulaval.ca  相似文献   

18.
We describe the measurement of the line width of an atom laser beam extracted from a Bose–Einstein condensate. Using a novel magnetic resonance imaging technique, we find that the energy width of the atom laser beam is Fourier-limited by the duration of the output-coupling process. Received: 25 July 2002 / Revised version: 28 October 2002 / Published online: 26 February 2003 RID="*" ID="*"Corresponding author. Fax: +41-1/633-1254, E-mail: koehl@iqe.phys.ethz.ch  相似文献   

19.
Surface nanostructuring of silicon   总被引:1,自引:0,他引:1  
Irradiation with polarized laser light of 248-nm wavelength induces the formation of periodic undulations ∼10-nm-highon flat silicon substrates. The wavelength of these periodic structures is a function of the light wavelength and the angle of incidence of the laser beam. Linear arrays of silicon nanoparticles with fairly uniform size that extended up to a millimeter were formed if the irradiation was performed using polarized light. When non-polarized laser light with the same fluence was used to illuminate an initially flat surface, non-aligned nanoparticle strings were obtained. However, if part of the irradiated area was microstructured, nanoparticle linear arrays resulted in the vicinity of the microstructured region. An analysis on the evolution of these nanostructures is presented. Nanocolumns could be grown on top of every cone of a microstructured surface upon cumulative laser irradiation with non-polarized light, reaching a height of ∼3 μm and a diameter of 100–200 nm. The mechanisms of nanocolumn origin and growth are analyzed. Received: 16 December 2002 / Accepted: 20 January 2003 / Published online: 28 May 2003 RID="*" ID="*"Corresponding author. Fax: +1-865/974-4115, E-mail: apedraza@utk.edu  相似文献   

20.
A synchronously pumped femtosecond optical parametric oscillator based on congruent MgO-doped periodically poled lithium niobate (c-MgO:PPLN) is reported. The system, operating at room temperature, was pumped by a mode-locked Ti:sapphire laser. The wavelengths of the signal and idler waves were tuned from 870 nm to 1.54 μm and 1.58 to 5.67 μm, respectively, by changing the pump wavelength, the grating period or the cavity length. Pumped by 1.1 W of 755 nm laser radiation, the OPO generated 310 mW of 1080 nm radiation. This signal output corresponds to a total conversion efficiency of 50%. Without dispersion compensation the OPO generated phase-modulated signal pulses of 200 fs duration. Besides the OPO of c-MgO:PPLN, an OPO of stoichiometric (s) MgO:PPLN was investigated. Because of the reduced sensitivity to photorefractive damage, both crystals allowed efficient OPO operation at room temperature. Received: 19 August 2002 / Revised version: 11 December 2002 / Published online: 19 March 2003 RID="*" ID="*"Corresponding author. Fax: +49-631/205-3906, E-mail: andres@physik.uni-kl.de  相似文献   

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