铜铟镓硒薄膜的拉曼和可见-近红外光谱表征

采用恒电位电沉积法在ITO上制备了铜铟镓硒(CIGS)前驱体薄膜,该前驱体薄膜在充氩气管式炉中经过高温硒化可得到结晶良好的CIGS薄膜。采用X-射线衍射(XRD)、拉曼光谱(Raman)、扫描电子显微镜(SEM)和紫外-可见光-近红外光谱仪分别表征了CIGS薄膜的结构、形貌、成分以及可见-近红外光谱(Vis-NIR)吸收特性。XRD结果表明前驱体薄膜高温硒化后所得的CIGS薄膜具有(112)择优取向,薄膜中CIGS晶粒的平均尺寸为24.7nm,Raman光谱表明薄膜中的CIGS是具有黄铜矿结构的四元纯相,没有其他二元三元杂相存在。Vis-NIR测量结果表明CIGS的禁带宽度随薄膜中镓含量的增加而增加,当Ga含量达5.41%时,通过吸收光谱测得CIGS的禁带宽度为1.11eV,通过理论计算得到镓铟比为Ga/(In+Ga)=16.3%,小于SEM测量所得的镓铟比Ga/(In+Ga)=21.4%,这表明还需进一步提高CIGS薄膜的结晶度。所有测量表明优化后的ITO/CIGS非常适合用来制作高质量的双面太阳能电池。该研究提出了制备低成本CIGS前驱体薄膜及高温硒化的新方法,通过这些方法在ITO上制备了均匀、致密、附着力好的CIGS薄膜。通过上述表征可知,在新工艺下制备的CIGS薄膜结晶度高,成分合理,无杂相,光吸收性质好。与磁控溅射法类似,电沉积法非常适合大面积工业化生产,该工作对CIGS的规模化生产具有重要的借鉴意义。     

Excitons associated with miniband dispersion in (InGa)As---GaAs strained layer superlattices

Photoluminescence excitation (PLE) spectroscopy has been used to characterise miniband formation in (InGa)-As---GaAs superlattices with nominally 50 Å wide wells and barriers between 200 Å and 50 Å. The nominal composition of the alloy layers was 0.06. The observed exciton features are consistent with theoreical predictions of both parity allowed and forbidden transitions, at the mini-Brillouin zone centre and edge, including transitions associated with M₁ critical points in the superlattice bandstructure. Furthermore, as the GaAs thickness is varied we monitor changes in shape of the PLE spectra in the region of the first free electron to heavy-hole subband continuum, brought about by the electron-hole Coulomb interaction within the miniband. We also report PLE measurements on a structure which has been designed specifically to maximise the possibility of revealing a Δn = 0 exciton resonance below the saddle point.     

Resonant photoemission spectroscopy of Cu(InGa)Se2 materials for solar cells

The electron structure of CuIn_{1 ? x} Ga _x Se₂ single crystals is determined via resonant photoemis-sion and the main regularities of its transformation upon varying concentration x from 0 to 1 are established. The dependence of the shape of valence band spectra on the photon energy is studied. Integral photoemission intensities are shown to be determined by atomic photoionization cross sections. Processes of the direct and two-step creation of photoelectrons accompanying photoemission and the participation of internal states in the spectra of electrons from valence bands are studied. Two-hole final states in photoemission are obtained upon threshold excitation of the Cu 2p level. The strong interaction of holes leads to the multiplet splitting of these states. Partial densities of the components’ states are determined using the energy dependence of atomic photoionization cross sections.     

Thickness optimization of Mo films for Cu（InGa）Se2 solar cell applications

Mo thin films are deposited on soda lime glass (SLG) substrates using DC magnetron sputtering. The Mo film thicknesses are varied from 0.08 μm to 1.5 μm to gain a better understanding of the growth process of the film. The residual stresses and the structural properties of these films are investigated, with attention paid particularly to the film thickness dependence of these properties. Residual stress decreases and yields a typical tensile-to-compressive stress transition with the increase of film thickness at the first stages of film growth. The stress tends to be stable with the further increase of film thickness. Using the Mo film with an optimum thickness of 1 μm as the back contact, the Cu(InGa)Se2 solar cell can reach a conversion efficiency of 13.15%.     

The (InGa)As-(InAl)As resonant tunnelling double barrier structure subjected to a transverse magnetic field

Magneto-tunnelling (B·J) is investigated in a symmetric double barrier resonant tunnelling device based on (InGa)As-(InAl)As. The effects of the Γ conduction band non-parabolicity are observed through the appearance of terms proportional to B³ and B⁴ in the dependence of Vp, the voltage at the current peak position of the I–V characteristics, on the magnetic field. A theoretical analysis considering pertubation theory and a simplified form of the formalism developed by Ekenberg [Phys. Rev. , 7714(1989)] is done which is in qualitative agreement with the experimental results.     

Properties of (InGa)As/GaAs QW (λ ≈ 1.2 µm) facet-coated edge emitting diode laser

In this paper, we report on the design and optical properties of laser diodes with an emission wave-length of ～1170 nm based on an (InGa)As/GaAs double quantum well active layer. The back and front facet of the laser diodes were coated with SiO_x dielectric films that influence the output optical power by enhancing or lowering the facet reflectivity. The measurements show improvement of the facet-coated laser diode properties in the threshold-current-density reduction along with light output power enhancement. Furthermore, a narrow far field pattern and high side mode suppression have been observed.     

Quantum dots formed by activated spinodal decomposition of InGa(Al)As alloy on InAs stressors

We have studied quantum dots (QDs) fabricated by activated spinodal decomposition (ASD) of an InGa(Al)As alloy deposited on top of self-organized InAs nanoscale stressors on GaAs substrate. Such a growth sequence results in a strong red shift of the PL emission down to 1.3 μm at 300 K. This red shift is caused by the formation of In-rich areas in the vicinity of the InAs islands, which increase the effective dot size. Beyond a certain critical InAs composition or nominal thickness of the InGa(Al)As layer the PL line shifts back towards higher energies. Adding Al to the alloy increases the red shift for a given In concentration. Room temperature lasing near 1.3 μm with threshold current densities of about 85 A/cm² was achieved for lasers based on three-fold stacked ASD-formed QDs, with a maximum cw output power of 2.7 W.     

High resolution x-ray diffractometry of the structural characteristics of a semiconducting (InGa)As/GaAs superlattice

A statistical approach is used to construct a kinematic theory of x-ray diffraction on a semiconducting superlattice with a two layer period. This theory takes two types of structural deformations into account: crystal lattice defects caused by microdefects distributed chaotically over the thickness of the superlattice, and periodicity defects of an additional superlattice potential owing to random deviations in the thicknesses of the layers of its period from specified values. Numerical simulation is used to illustrate the effect of structural defects on the development of the diffraction reflection curve. The theory is used to analyze experimental x-ray diffraction spectra of semiconducting In_xGa_1−x As/GaAs superlattices. Zh. Tekh. Fiz. 69, 44–53 (February 1999)     

Photoreflectance investigation of hydrogenated (InGa)(AsN)/GaAs heterostructures

The optical response of as grown and hydrogenated In_0.32Ga_0.68As_1-yN_y/GaAs single quantum wells (y = 0, 0.027) has been investigated from T = 80 K to room temperature by photoreflectance. Three excitonic spectral features detected in the N free sample shift to lower energy in the N containing sample and back to higher energy upon H irradiation of the N containing sample. In the hydrogenated sample, a progressive change with increasing temperature of the nature of the lowest energy transition from an excitonic to a band-to-band character has been explained in terms of an increasing release of carriers from traps formed by H and N clusters. A reduction in the oscillator strength of the lowest energy transition and an increase in the binding energy of the heavy-hole exciton have been explained in terms of an increase in the electron effective mass upon N introduction into the In_xGa_1-xAs lattice. Received 23 June 2002 Published online 19 November 2002     

Improving the performance of pure sulfide Cu(InGa)S2 solar cells via injection annealing system

In this study, we present an effective method of improving the performance of pure sulfide Cu(InGa)S₂ (CIGS) solar cells via injection annealing system. The injection annealing system can perform annealing at desired temperatures, and therefore, the CIGS thin film passed over the temperature range in which secondary phases occurs. Via the injection annealing system, secondary phase InS_x was effectively removed from the surface of the CIGS thin films at the temperatures over 550°C. This resulted in the formation of good-quality P–N junction CIGS devices, thereby improving significantly the performance of the CIGS solar cell. In addition, the open-circuit-voltage (V_OC) and fill factor (FF) of the CIGS devices increased gradually with increasing annealing temperature in the range of 550–640°C. It is speculated that the bulk defects were decreased as the annealing temperature increased. Finally, via injection annealing system, a pure sulfide CIGS solar cell with an efficiency of 12.16% was achieved.     

Magnetotunneling spectroscopy of ring-shaped (InGa)As quantum dots: Evidence of excited states with 2pz character

We study the effect of a high magnetic field (B) on the current–voltage characteristics, I(V), of a GaAs/(AlGa)As resonant tunneling diode incorporating a layer of ring-shaped quantum dots (QDs) in the quantum well (QW). The dots give rise to a series of four unusual resonances in I(V) which show a high degree of reproducibility across the epitaxial wafer. By combining data for B parallel and perpendicular to the growth axis z, we identify that the unusual resonances arise from resonant tunneling into QD excited states with 2p_z-like symmetry. The two series of magneto-oscillations in I for Bz allow us to determine the resonant charging and discharging of the QW with varying bias.     

Optical emission from the one-dimensional electron gas in narrow modulation-doped GaAs/(InGa)As/(AlGa)As quantum wires fabricated by lateral top barrier modulation

We report on the fabrication and photoluminescence characterisation of n-type doped quantum wires, which are based on a modulation-doped GaAs/(InGa)As/(AlGa)As quantum well structure, as used in inverted high electron mobility transistors. Lateral patterning was performed by electron beam lithography followed by a selective wet etch process to remove the n-type doped GaAs top barrier between the wire regions. The removal of the top barrier was verified by micro-Raman spectroscopy. Spatially indirect emission from the one-dimensional (ID) electron gas formed in the quantum wires is observed in low-temperature photoluminescence, even for the narrowest geometrical wire width of 23 nm. The emission shows a blue-shift for wire widths below 100 nm, which amounts to up to 60 meV for the narrowest wires.PACS: 78.66.Fd, 73.20.Dx, 78.55.Cr     

Investigation of the bulk and contact parameters of ZnSe crystals with symmetric InGa contacts using the current-voltage characteristics

The current-voltage characteristics of ZnSe single crystals were investgated. These characteristics for a metal-semiconductor-metal structure are interpreted with allowance for the influence of the finite injection capacity of the contact. The generalized approximate theory of current-voltage characteristics is used to estimate the bulk and contact parameters of the InGa-ZnSe system and construct an energy diagram of the n⁺-n junction.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 42–46, February, 1981.     

Improvement of the carrier distribution with GaN/InGa N/AlGaN/InGaN/GaN composition-graded barrier for InGaN-based blue light-emitting diode

In Ga N light-emitting diodes(LEDs) with Ga N/In Ga N/Al Ga N/In Ga N/Ga N composition-graded barriers are proposed to replace the sixth and the middle five Ga N barriers under the condition of removing the electron blocking layer(EBL)and studied numerically in this paper. Simulation results show that the specially designed barrier in the sixth barrier is able to modulate the distributions of the holes and electrons in quantum well which is adjacent to the specially designed barrier. Concretely speaking, the new barrier could enhance both the electron and hole concentration remarkably in the previous well and reduce the hole concentration for the latter one to some extent along the growth direction. What is more,a phenomenon, i.e., a better carrier distribution in all the wells, just appears with the adoption of the new barriers in the middle five barriers, resulting in a much higher light output power and a lower efficiency droop than those in a conventional LED structure.     

关于光子角动量问题的来信

关于光子角动量问题的来信编辑同志：看了１９９８年第１期《大学物理》刊登的读者来信，想说几点看法：１）沿动量方向的自旋分量并不是沿固定方向的自旋分量．在经典物理中，因为粒子有确定的动量，所以，沿其方向的自旋分量当然也是一种沿固定方向（该动量方向）的自旋...     

Theoretical Study of the Collision-Induced Double Transition CO(2) (nu(3) = 1) + N(2) (nu(1) = 1) <-- CO(2) (nu(3) = 0) + N(2) (nu(1) = 0) at 296 K

A procedure is presented for the calculation of the double vibrational collision-induced absorption CO(2) (nu(3) = 1) + N(2) (nu(1) = 1) <-- CO(2) (nu(3) = 0) + N(2) (nu(1) = 0) on the basis of quantum lineshapes computed using an isotropic potential and dipole-induced dipole functions. The linestrengths and energies of the vibration-rotation transitions are treated explicitly for N(2), utilizing the HITRAN database for CO(2). The theoretical absorption profile is compared to recent experimental results. By narrowing the width of the individual lines contributing to the overall absorption profile relative to their values determined for N(2)-N(2) collision-induced absorption, excellent agreement between theory and experiment is obtained. Copyright 2000 Academic Press.     

First Observation of the nu(17)-nu(4) Difference Bands of Diborane (10)B(2)H(6) and (11)B(2)H(6)

An analysis of the nu(17)-nu(4) difference bands near 800 cm(-1) of two isotopic species, (10)B(2)H(6) and (11)B(2)H(6), of diborane has been carried out using infrared spectra recorded with a resolution of ca. 0.003 cm(-1). In addition, the nu(17) band of (10)B(2)H(6) has been recorded and assigned. Since this band in (11)B(2)H(6) had already been studied (R. L. Sams, T. A. Blake, S. W. Sharpe, J.-M. Flaud, and W. J. Lafferty, J. Mol. Spectrosc. 191, 331-342 (1998)), it was possible to derive precise energy levels and Hamiltonian constants for the 4(1) vibrational states of both isotopic species. Copyright 2000 Academic Press.     

The Perturbation between the G(1)Pi(g) and 2(1)Delta(g) States of (7)Li(2)

We have observed the rotational levels in the v = 2, 3, 5, 6, 7, and 8 vibrational manifolds of the 2(1)Delta(g) state of (7)Li(2) via the A(1)Sigma(+)(u) intermediate levels by DeltaLambda = 2 transitions. This violation of the DeltaLambda = 0, +/-1 selection rule is due to the interaction with the G(1)Pi(g) state. Band-by-band deperturbations of the G(1)Pi(g) approximately 2(1)Delta(g) (v(Pi), v(Delta)) = (11, 2), (12, 3), (15, 5), (16, 6), (18, 7), and (19, 8) bands have been performed. Deperturbed molecular constants and rotational-electronic interaction parameters are reported here. Copyright 2000 Academic Press.     

Rovibrational Intensities of the (00(0)3) <-- (10(0)0) Dyad Absorption Bands of (12)C(16)O(2)

Absolute line intensities of (12)C(16)O(2) are experimentally measured for the first time for the (00(0)3)(I) <-- (10(0)0)(II) band at 5687.17 cm(-1) and the (00(0)3)(I) <-- (10(0)0)(I) band at 5584.39 cm(-1). The spectra were obtained using a Bomem DA8 Fourier transform spectrometer and a 25-m base-path White cell at NASA-Ames Research Center. The rotationless bandstrengths at a temperature of 296 K and the Herman-Wallis parameters are S(0)(vib) = 6.68(30) x 10(-25) cm(-1)/(molecule/cm(2)); A(1) = 1.4(9) x 10(-4), and A(2) = -1.1(5) x 10(-5) for the (00(0)3)(I) <-- (10(0)0)(II) band and S(0)(vib) = 6.07(22) x 10(-25) cm(-1)/(molecule/cm(2)); A(1) = 5.2(1.5) x 10(-4) and A(2) = -4.0(7) x 10(-5) for the (00(0)3)(I) <-- (10(0)0)(I) band.