Temperature dependence of thermoelectric properties of Ni-doped CoSb3

Temperature dependences of the Hall coefficient, Hall mobility and thermoelectric properties of Ni-doped CoSb₃ have been characterized over the temperature range from 20 to 773 K. Ni-doped CoSb₃ is an n-type semiconductor and the conduction type changes from n-type to p-type at around 450 K. The temperature for the transition from n-type to p-type increased with increasing Ni content x. The Seebeck coefficient reaches a maximum value near the transition temperature. The electrical resistivity indicates that Co_1−xNi_xSb₃ is a typical semiconductor when x≤0.03 and a degenerate semiconductor when x>0.03. Thermal conductivity analyses show that the lattice component is predominant at lower temperatures and carrier and bipolar components become large at temperatures higher than the transition temperature. The thermoelectric figure of merit reaches a maximum value close to the transition temperature and the largest value, 4.67×10⁻⁴ K⁻¹ at 600 K, was obtained for x=0.05.     

High temperature thermoelectric properties of Nb-doped ZnO ceramics

Solid-state reaction processing technique was used to prepare Zn_xNb_1−xO (0≤x≤0.02) polycrystalline bulk samples. In the present study, we find that their lattice parameters a and c tend to decrease with increasing amount of Nb additive. The electrical conductivity of all the Zn_1−xNb_xO samples increased with increasing temperature, indicating a semiconducting behavior in the measured temperature range. The addition of Nb₂O₅ to ZnO led to an increase in the electrical conductivity and a decrease in the absolute value of the Seebeck coefficient. The best performance at 1000 K has been observed for nominal 0.5 at% Nb-doped ZnO, with an electrical resistivity of about 73.13 (S cm⁻¹) and Seebeck coefficient of ∼257.36 μV K⁻¹, corresponding to a power factor (S²σ) of 4.84×10⁻⁴ Wm⁻¹ K⁻². The thermal conductivity, κ, of the oxide decreased as compared to pure ZnO. The figure of merit ZT values of ZnO-doped Nb₂O₅ samples are higher than the ZnO pure sample, demonstrating that the Nb₂O₅ addition is fairly effective for enhancing thermoelectric properties.     

Structural and magnetic phase diagram and room temperature CMR effect of La1−xAgxMnO3

The study of the structural and magnetic phase diagram of the manganites La_1−xAg_xMnO₃ shows similarity with the La_1−x′Sr_x′MnO₃ series, involving a metallic ferromagnetic domain at relatively high temperature (≈300 K). The Ag-system differs from the Sr-one by a much smaller homogeneity range (x≤1/6) and the absence of charge ordering. But the most important feature of the Ag-manganites deals with the exceptionally high magnetoresistance (−25%) at room temperature under 1.2 T, that appears for the composition x=1/6. The latter is interpreted as the coincidence of the optimal double exchange condition (Mn³⁺:Mn⁴⁺=2) with T_max=300 K (maximum of the ρ(T) curve in zero field).     

Optical gain due to the Eu transition in the alloy of Ca1-xEuxGa2S4

Room temperature photoluminescence quantum efficiency of the alloy of Ca_1−xEu_xGa₂S₄ was measured as a function of x, and was found to be nearly unity under excitation at peak wavelength of excitation spectrum (510 nm) in the x range of 0.01≤x≤0.2. At larger x values, it tends to decrease, but still as high as 30% for stoichiometric compound EuGa₂S₄. Taking these backgrounds into account, pump-probe experiments were done with Ca_1−xEu_xGa₂S₄ for searching optical gain at x=0.2. The optical gain of nearly 30 cm⁻¹ was confirmed to exist, though the pumping induced transient absorption which seems to limit the higher gain was found.     

Atomic vibrational dynamics of amorphous Fe-Mg alloy thin films

The atomic vibrational dynamics of ⁵⁷Fe in 800-Å thick amorphous Fe_xMg_1−x alloy thin films (0.3≤x≤0.7) has been investigated at room temperature by nuclear resonant inelastic X-ray scattering (NRIXS) of 14.4125 keV synchrotron radiation. The amorphous phase has been successfully stabilized by codeposition of Fe and Mg in ultrahigh vacuum onto a substrate held at −140 °C during deposition. The amorphous structure of the samples was confirmed by X-ray diffraction and conversion electron Mössbauer spectroscopy. The ⁵⁷Fe-projected partial vibrational density of states, g(E), has been obtained from the measured NRIXS vibrational excitation probability, together with thermodynamic quantities such as the probability of recoilless absorption (f-factor), the average kinetic energy per Fe atom, the average force constant, and the vibrational entropy per Fe atom. A plot of g(E)/E² versus E proves the existence of non-Debye-like vibrational excitations with a peak at E_bp∼3-5 meV (boson peak). Both the boson peak height and E_bp were found to depend linearly on the composition x. Above the boson peak, g(E)/E² exhibits an exponential decrease.     

Structure and magnetic properties of (Nd,Dy)16(Fe,Co)76−xTixB8 powders prepared by mechanical alloying

Nanocrystalline (Nd,Dy)₁₆(Fe,Co)_76−xTi_xB₈ magnets were prepared by mechanical alloying and respective heat treatment at 973–1073 K/30–60 min. An addition of 0.5 at % of Ti results in an increase of coercivity from 796 to 1115 kA m⁻¹. Partial substitution of Nd by Dy results in an additional increase of coercivity up to 1234 kA m⁻¹. Mössbauer investigations shows that for x?1 the (Nd,Dy)₁₆(Fe,Co)_76−xTi_xB₈ powders are single phase. For higher Ti contents (x>1) the mechanically alloyed powders heat treated at 973 K are no more single phase, and the coercivity decreases due to the presence of an amorphous phase. A heat treatment at a higher temperature (1073 K) for longer time (1 h) results in the full recrystallisation of powders. The mean hyperfine field of the Nd₂Fe₁₄B phase decreases for titanium contents of 0?x?1, and remains constant for x>1. This indicates that the Ti content in the Nd₂Fe₁₄B phase reaches its maximum value.     

Synthesis and magnetic properties of melt-spun high Pr-content magnetostrictive alloys

Pseudobinary high Pr-content Tb_1−xPr_x(Fe_0.4Co_0.6)_1.93 (0.70≤x≤1.00) magnetostrictive alloys have been fabricated by a melt-spinning method. The effects of the composition, spinning, and annealing processes on the structure, thermal stability, and magnetic properties are investigated. At a wheel speed of v≤30 m/s, the as-spun ribbons consist of a mixture of (Tb,Pr)(Fe,Co)₂ cubic Laves phase and some non-cubic phases. A single (Tb,Pr)(Fe,Co)₂ phase with MgCu₂-type structure is formed with the process for the speed of v≥35 m/s and subsequent annealing at 500 °C for 30 min. The lattice parameter of the Tb_1−xPr_x(Fe_0.4Co_0.6)_1.93 Laves phase increases from 0.7354 nm for x=0.70 to 0.7384 nm for x=1.00 and approximately follows the linear Vegard's law. The Curie temperature decreases, while the saturation magnetization increases as increasing Pr content. The Pr-rich alloys possess the relatively lower coercivity and the faster saturation of magnetostriction as compared with the Tb-rich alloys, which can be understood by their lower magnetic anisotropy.     

Effect of Fe substitution on magnetocaloric effect in La0.7Sr0.3Mn1−xFexO3 (0.05≤x≤0.20)

We have studied the effect of Fe substitution on magnetic and magnetocaloric properties in La_0.7Sr_0.3Mn_1−xFe_xO₃ (x=0.05, 0.07, 0.10, 0.15, and 0.20) over a wide temperature range (T=10-400 K). It is shown that substitution by Fe gradually decreases the ferromagnetic Curie temperature (T_C) and saturation magnetization up to x=0.15 but a dramatic change occurs for x=0.2. The x=0.2 sample can be considered as a phase separated compound in which both short-range ordered ferromagnetic and antiferromagnetic phases coexist. The magnetic entropy change (−ΔS_m) was estimated from isothermal magnetization curves and it decreases with increase of Fe content from 4.4 J kg⁻¹ K⁻¹ at 343 K (x=0.05) to 1.3 J kg⁻¹ K⁻¹ at 105 K (x=0.2), under ΔH=5 T. The La_0.7Sr_0.3Mn_0.93Fe_0.07O₃ sample shows negligible hysteresis loss, operating temperature range over 60 K around room temperature with refrigerant capacity of 225 J kg⁻¹, and magnetic entropy of 4 J kg⁻¹ K⁻¹ which will be an interesting compound for application in room temperature refrigeration.     

Influence of Co doping content on its valence state in Zn1−xCoxO (0 ≤ x ≤ 0.15) thin films

Zn_1−xCo_xO (0 ≤ x ≤ 0.15) thin films grown on Si (1 0 0) substrates were prepared by a sol-gel technique. The effects of Co doped on the structural, optical properties and surface chemical valence states of the Zn_1−xCo_xO (0 ≤ x ≤ 0.15) films were investigated by X-ray diffraction (XRD), ultraviolet-visible spectrometer and X-ray photoelectron spectroscopy (XPS). XRD results show that the Zn_1−xCo_xO films retained a hexagonal crystal structure of ZnO with better c-axis preferred orientation compared to the undoped ZnO films. The optical absorption spectra suggest that the optical band-gap of the Zn_1−xCo_xO thin films varied from 3.26 to 2.79 eV with increasing Co content from x = 0 to x = 0.15. XPS studies show the possible oxidation states of Co in Zn_1−xCo_xO (0 ≤ x ≤ 0.05), Zn_0.90Co_0.10O and Zn_0.85Co_0.15O are CoO, Co₃O₄ and Co₂O₃, with an increase of Co content, respectively.     

Oxygen deficiency, vacancy clustering and ionic transport in (La,Sr)CoO3 − δ

The equilibrium p(O₂)-T-δ diagrams of perovskite-type La_1 − xSr_xCoO_3 − δ (x = 0.3-0.7), collected at 873-1223 K in the oxygen partial pressure range 10^− 5-1 atm by coulometric titration and thermogravimetric analysis, were analyzed in order to appraise the effects of the point-defect interactions. The nonstoichiometry variations were adequately described combining the rigid-band approach for delocalized holes and the pair-cluster formation reaction involving oxygen vacancies and Co²⁺ cations, whilst coulombic repulsion between the positively charged vacancies can be neglected. The resultant relationships between the oxygen chemical potential and mobile vacancy concentration were used for numerical regression analysis of the steady-state oxygen permeation through dense La_1 − xSr_xCoO_3 − δ membranes, affected by the surface exchange kinetics when Sr²⁺ content is higher than 40-50%. The calculated ionic conductivity is strongly influenced by the defect association processes, and decreases with decreasing concentration of the mobile vacancies as clustering starts to prevail on reduction. The Mössbauer spectroscopy studies of La_1 − xSr_xCoO_3 − δ, doped with 1 mol% ⁵⁷Fe isotope and moderately reduced at p(O₂) ≈ 10⁻⁵ atm, show no long-range vacancy ordering at x ≤ 0.5.     

Microstructure and nanohardness of the diluted magnetic semiconducting Cd1−xMnxS nano-crystalline films

Cd_1−xMn_xS nano-crystalline films (0 ≤ x ≤ 0.5) were formed on glass substrates by thermal evaporation technique at room temperature (300 K). AFM studies showed that all the films were in nano-crystalline form with the grain size varying in the range between 36 and 58 nm and exhibited hexagonal structure of the host material. The lattice parameters varied linearly with composition, following Vegard's law in the entire composition range. The nanohardness and Young's modulus decreased sharply with ‘Mn’ content upto x = 0.3 and increased with high Mn content.     

Photoluminescence investigation of ferromagnetic Ga1−xMnxN layers with GaN templates grown on sapphire (0 0 0 1) substrates

We have investigated the temperature and composition dependent photoluminescence (PL) spectra in Ga_1−xMn_xN layers (where x ≈ 0.1-0.8%) grown on sapphire (0 0 0 1) substrates using the plasma-enhanced molecular beam epitaxy technique. The efficient PL is peaked in the red (1.86 eV), yellow (2.34 eV), and blue (3.29 eV) spectral range. The band-gap energy of the Ga_1−xMn_xN layers decreased with increasing temperature and manganese composition. The band-gap energy of the Ga_1−xMn_xN layers was modeled by the Varshni equation and the parameters were determined to be α = 2.3 × 10⁻⁴, 2.7 × 10⁻⁴, 3.4 × 10⁻⁴ eV/K and β = 210, 210, and 230 K for the manganese composition x = 0.1%, 0.2%, and 0.8%, respectively. As the Mn concentration in the Ga_1−xMn_xN layers increased, the temperature dependence of the band-gap energy was clearly reduced.     

Magnetic and electrical properties of amorphous Ge1−xCrx thin films grown by low temperature vapor deposition

Amorphous Ge_1−xCr_x thin films are deposited on (1 0 0)Si by using a thermal evaporator. Amorphous phase is obtained when Cr concentration is lower than 30.7 at%. The electrical resistivities are 1.89×10⁻³–0.96×10² Ω cm at 300 K, and decrease with Cr concentration. The Ge_1−xCr_x thin films are p-type. The hole concentrations are 5×10¹⁶–7×10²¹ cm⁻³ at 300 K, and increase with Cr concentration. Magnetizations are 7.60–1.57 emu/cm³ at 5 K in the applied field of 2 T. The magnetizations decrease with Cr concentration and temperature. Magnetization characteristics show that the Ge_1−xCr_x thin films are paramagnetic.     

Parallel syntheses and thermoelectric properties of Ce-doped SrTiO3 thin films

Thermoelectric properties of single crystalline Ce_xSr_1−xTiO₃ films (0 ≤ x ≤ 0.5) have been studied by using combinatorial pulsed-laser deposition. Temperature gradient method was used for identifying an optimum growth temperature for SrTiO₃ homoepitaxial growth, at which both oxygen stoichiometry and persisting layer-by-layer growth mode could be accomplished. Electrical conductivity (σ) and Seebeck coefficient (S) were measured at room temperature for the composition-spread films grown at the optimized temperature and found to be considerably higher than those reported for bulk poly-crystalline compounds. Hall measurement revealed that carrier density linearly increased with increasing x, suggesting that a trivalent Ce ions substituted divalent Sr ions to supply electrons. A maximum power factor (S²σ) was obtained for the x = 0.2 film, being 7 and 14 μW/K² cm at 300 and 900 K, respectively.     

Structural properties of host laser single crystal Yb:YAG

High quality Yb_xY_1 − xAG (0 ≤ × ≤ 1) single crystals were grown by using the Czochralski method. The structural properties of Yb_xY_1 − xAG (0 ≤ x ≤ 1) single crystals were also investigated using the EXAFS method. Additionally, for the first time, EXAFS results were compared with XRD results. Moreover, without essential lattice structure transformation, Yb_xY_1 − xAG crystals can be found due to the varying of doping concentration in XRD measurements. However, EXAFS measurements indicated that the local fine structural variation around the Yb³⁺ ion depends on the Yb³⁺ concentration.     

The influence of Mn content on luminescence properties in Mn-doped ZnO films deposited by ultrasonic spray assisted chemical vapor deposition

Mn-doped ZnO (Zn_1−xMn_xO, 0 ≤ x ≤ 0.1) films are prepared by an ultrasonic spray assisted chemical vapor deposition method. X-ray diffraction and Raman scattering show that all the Zn_1−xMn_xO films are good wurtzite structures without any impurity phases. Cathodoluminescence spectra show that ultraviolet emission and green luminescence can be observed. The intensity of ultraviolet emission decreases with the increment of x, while the intensity of green luminescence increases with the increment of x when x ≤ 0.02. However, when x (x > 0.02) is further increased, the intensity of green luminescence decreases gradually, and the green luminescence disappears when x is above 0.075. We consider that the change of the luminescence is related to the competition between the radiative recombination and the non-radiative recombination.     

Structural, magnetic properties and magnetostriction studies of Sm1−xNdxFe1.55 alloys

Structural, magnetic properties and magnetostriction studies of Sm_1−xNd_xFe_1.55 (0≤x≤0.56) alloys have been performed. X-ray diffraction analysis confirms the presence of single cubic Laves phase in Sm_1-xNd_xFe_1.55 alloys with 0≤x≤0.48. The lattice parameter of alloys increases linearly with increase in Nd content while the Curie temperature behaves in the opposite way. The alloy x=0.08 exhibits a giant magnetostriction value (λ_∥-λ_⊥) of −2187 ppm at a magnetic field of 12 kOe due to the anisotropy compensation between Sm³⁺ and Nd³⁺ ions.     

Study of Zn1−xCoxO (0.02≤x≤0.08) dilute magnetic semiconductor prepared by mechanosynthesis route

Single-phase Zn_1−xCo_xO (0.02≤x≤0.08) dilute magnetic semiconductor is prepared by mechanical milling process. The shift of XRD peaks towards the higher angle and a redshift in the band gap compared to the undoped ZnO ensure the incorporation of Co²⁺ ions in the semiconductor host lattice. Pure Zn_xCo_1−xO phases show the paramagnetic behavior in the temperature range 80 K≤T≤300 K. The room temperature volume magnetic susceptibility (χ_v) estimated in case of Zn_0.96Co_0.04O is ∼10⁻⁵ emu/Oe cm³. The temperature dependence of susceptibility χ_v can be fitted well with Curie law confirming the paramagnetic interaction. The observed crystal-field splitting of 3d levels of Co²⁺ ions inside Zn_1−xCo_xO has been successfully interpreted using Curie law.     

A combinatorial approach to the discovery and optimization of YCa4O(BO3)3-based luminescent materials

Thin films of YCa₄O(BO₃)₃ (YCOB)-based new luminescent materials were explored by the combinatorial pulsed laser deposition (PLD) method which enabled us to fabricate continuous composition spread film libraries. Strong red and green luminescence were found in the Y_1−xEu_xCOB (0 ≤ x ≤ 1), (YEuCOB) and Y_1−yTb_yCOB (0 ≤ y ≤ 1) (YTbCOB) films, respectively. The film libraries were characterized by photoluminescence (PL), PL decay, an electron-probe microanalyzer and an electron diffraction analysis. The luminescent intensities in the amorphous film libraries strongly depended on the chemical composition of each rare-earth (RE) ion. The optimum concentration of rare-earth ions in YEuCOB and YTbCOB were experimentally determined to be Eu = 7.5% and Tb = 20-30%, respectively.     

Recent developments in the formation and structure of tin-iron oxides by laser pyrolysis

Complex oxides demonstrate specific electric and magnetic properties which make them suitable for a wide variety of applications, including dilute magnetic semiconductors for spin electronics. A tin-iron oxide Sn_1−xFe_xO₂ nanoparticulate material has been successfully synthesized by using the laser pyrolysis of tetramethyl tin-iron pentacarbonyl-air mixtures. Fe doping of SnO₂ nanoparticles has been varied systematically in the 3-10 at% range. As determined by EDAX, the Fe/Sn ratio (in at%) in powders varied between 0.14 and 0.64. XRD studies of Sn_1−xFe_xO₂ nanoscale powders, revealed only structurally modified SnO₂ due to the incorporation of Fe into the lattice mainly by substitutional changes. The substitution of Fe³⁺ in the Sn⁴⁺ positions (Fe³⁺ has smaller ionic radius as compared to the ionic radius of 0.69 Å for Sn⁴⁺) with the formation of a mixed oxide Sn_1−xFe_xO₂ is suggested. A lattice contraction consistent with the determined Fe/Sn atomic ratios was observed. The nanoparticle size decreases with the Fe doping (about 7 nm for the highest Fe content). Temperature dependent ⁵⁷Fe Mössbauer spectroscopy data point to the additional presence of defected Fe³⁺-based oxide nanoclusters with blocking temperatures below 60 K. A new Fe phase presenting magnetic order at substantially higher temperatures was evidenced and assigned to a new type of magnetism relating to the dispersed Fe ions into the SnO₂ matrix.