Laser-induced thermal desorption mass spectrometry of functionalized silicon surfaces

Functionalization of materials and laser patterning of chemisorbed layers play an increasing role in tailoring and structuring surface properties on the nanoscale. An attractive method of investigating organic functionalizations is laser-induced thermal desorption (LITD). The analysis of well-defined H- and D-terminated Si(1 1 1)-(1 × 1):H(D) surfaces was used to quantify the LITD technique. Moreover, oxidized silicon surfaces were functionalized with trimethylsilyl (TMS) and (3,3,3-trifluoropropyl)-dimethylsilyl (TFP) hydrophobic end groups. The samples were irradiated normal to the surface with focused XeCl laser pulses. The desorbed species were monitored at an oblique angle and their time-of-flight (TOF) distributions were measured with a quadrupole mass analyzer. The TOF temperatures of silicon were calibrated for different laser pulse energies by desorption of H₂ and D₂. In the LITD experiments, the desorption of trimethylsilanol groups was observed for TMS terminations, indicating that essentially the whole molecule desorbs from the surface. The TOF data could be fitted to Maxwellian distributions, providing the desorption yield of the emitted species, their mass, and temperature. On the other hand, several characteristic fragments were found for the TFP-terminated surface. The TOF distributions indicate that the fragments detected with the analyzer derived from different desorbed species.     

Preparation, IR spectroscopy, and time-of-flight mass spectrometry of halogenated and methylated Si(111)

The preparation of chlorine-, bromine-, and iodine-terminated silicon surfaces (Si(111):Cl, Br, and I) using atomically flat Si(111)-(1×1):H is described. The halogenated surfaces were obtained by photochemically induced radical substitution reactions with the corresponding dihalogen in a Schlenk tube by conventional inert gas chemistry. The nucleophilic substitution of the Si-Cl functionality with the Grignard reagent (CH₃MgCl) resulted in the unreconstructed methylated Si(111)-(1×1):CH₃ surface. The halogenated and methylated silicon surfaces were characterized by Fourier transform infrared (FTIR) spectroscopy and laser-induced desorption of monolayers (LIDOM). Calibration of the desorption temperature via analysis of time-of-flight (TOF) distributions as a function of laser fluence allowed the determination of the originally emitted neutral fragments by TOF mass spectrometry using electron-impact ionization. The halogens were desorbed atomically and as SiX _n (X = Cl, Br) clusters. The methyl groups mainly desorbed as methyl and ethyl fragments and a small amount of ⁺SiCH₃.     

Adsorption and decomposition of triethylsilane on Si(1 0 0)

The adsorption and decomposition of triethylsilane (TES) on Si(1 0 0) were studied using temperature programmed desorption (TPD), high resolution electron energy loss spectroscopy (HREELS), electron stimulated desorption (ESD), and X-ray photoelectron spectroscopy (XPS). TPD and HREELS data indicate that carbon is thermally removed from the TES-dosed Si(1 0 0) surface via a β-hydride elimination process. At high exposures, TPD data shows the presence of physisorbed TES on the surface. These species are characterized by desorption of TES fragments at 160 K. Non-thermal decomposition of TES was studied at 100 K by irradiating the surface with 600 eV electrons. ESD of mass 27 strongly suggests that a β-hydride elimination process is a channel for non-thermal desorption of ethylene. TPD data indicated that electron irradiation of physisorbed TES species resulted in decomposition of the parent molecule and deposition of methyl groups on the surface that desorbed thermally at about 900 K. Without electron irradiation, mass 15 was not detected in the TPD spectra, indicating that the production of methyl groups in the TPD spectra was a direct result of electron irradiation. XPS data also showed that following electron irradiation of TES adsorbed on Si(1 0 0), carbon was deposited on the surface and could not be removed thermally.     

HREELS study of the adsorption and evolution of diethylamine (DEA) on Si(1 0 0) surfaces

The adsorption of diethylamine (DEA) on Si(1 0 0) at 100 K was investigated using high-resolution electron energy loss spectroscopy (HREELS) and electron stimulated desorption (ESD). The thermal evolution of DEA on Si(1 0 0) was studied using temperature programmed desorption (TPD). Our results demonstrate DEA bonds datively to the Si(1 0 0) surface with no dissociation at 100 K. Thermal desorption of DEA takes place via a β-hydride elimination process leaving virtually no carbon behind. Electronic processing of DEA/Si(1 0 0) at 100 K results in desorption of ethyl groups; however, carbon and nitrogen are deposited on the surface as a result of electron irradiation. Thermal removal of carbon and nitrogen was not possible, indicating the formation of silicon carbide and silicon nitride.     

Temperature programmed desorption studies of deuterium passivated silicon nanocrystals

As grown silicon (Si) surfaces are known to reconstruct in order to reduce the number of dangling bonds. Surface reconstructions of hydride-terminated Si(1 0 0) and Si(1 1 1) surfaces have already been extensively studied using temperature programmed desorption (TPD). The surfaces of nanocrystals, are yet to be probed using TPD. Si nanocrystals less than 8 nm and ranging from 50 to 200 nm in diameter are grown on SiO₂ surfaces in an ultra high vacuum chamber and the as grown surfaces are exposed to atomic deuterium. Desorption spectra are interpreted using analogies to Si(1 0 0). TPD spectra show that that the nanocrystals surfaces are covered by a mix of monodeuteride, dideuteride and trideuteride species. Monodeuteride species can be isolated by selectively annealing away the dideuteride and trideuteride, monodeuteride and dideuteride species can be isolated by annealing away the trideuteride. The relative populations of the deuterides depend on particle size, and their manner of filling on nanoparticles differs from that for extended surfaces. Etching of the nanocrystal surface is observed during TPD, which is a confirmation of the presence of trideuteride species on the nanocrystal surface.     

Interpretation of initial stage of 3C-SiC growth on Si(1 0 0) using dimethylsilane

The initial stage of cubic silicon carbide (3C-SiC) growth on a Si(0 0 1) surface using dimethylsilane (DMS) as a source gas was observed using scanning tunneling microscopy (STM) and reflection high-energy electron diffraction (RHEED). It was found that the dimer vacancies initially existing on the Si(0 0 1)-(2 × 1) surface were repaired by the Si atoms in DMS molecules, during the formation of the c(4 × 4) surface. From the STM measurement, nucleation of SiC was found to start when the Si surface was covered with the c(4 × 4) structure but before the appearance of SiC spots in the RHEED pattern. The growth mechanism of SiC islands was also discussed based on the results of RHEED, STM and temperature-programmed desorption (TPD).     

Two-dimensional hydrogen behaviors on solid surfaces studied by hydrogen microscope

Recently, much work has been done to study hydrogen behavior on solid surfaces for applications in fuel cells, semiconductor devices, and diamond-like carbon films. We have developed a hydrogen microscope making use of electron stimulated desorption (ESD) spectroscopy. A thermal-field emission type electron gun set to a low-energy range (<1 keV) is used to obtain a beam size less than 100 nm in diameter. A pulsed beam has been used to measure the time-of-flight (TOF) to detect desorbed ions from specimen surfaces. Scanning the pulsed beams across solid surfaces, a two-dimensional distribution image of hydrogen atoms can be obtained. This paper reviews some capabilities of the hydrogen microscope and a chemical state analysis for H and O adsorbed by different elements on a surface.     

High-density-plasma (HDP)-CVD oxide to thermal oxide wafer bonding for strained silicon layer transfer applications

Direct wafer bonding between high-density-plasma chemical vapour deposited (HDP-CVD) oxide and thermal oxide (TO) has been investigated. HDP-CVD oxides, about 230 nm in thickness, were deposited on Si(0 0 1) control wafers and the wafers of interest that contain a thin strained silicon (sSi) layer on a so-called virtual substrate that is composed of relaxed SiGe (∼4 μm thick) on Si(0 0 1) wafers. The surfaces of the as-deposited HDP-CVD oxides on the Si control wafers were smooth with a root-mean-square (RMS) roughness of <1 nm, which is sufficiently smooth for direct wafer bonding. The surfaces of the sSi/SiGe/Si(0 0 1) substrates show an RMS roughness of >2 nm. After HDP-CVD oxide deposition on the sSi/SiGe/Si substrates, the RMS roughness of the oxide surfaces was also found to be the same, i.e., >2 nm. To use these wafers for direct bonding the RMS roughness had to be reduced below 1 nm, which was carried out using a chemo-mechanical polishing (CMP) step. After bonding the HDP-CVD oxides to thermally oxidized handle wafers, the bonded interfaces were mostly bubble- and void-free for the silicon control and the sSi/SiGe/Si(0 0 1) wafers. The bonded wafer pairs were then annealed at higher temperatures up to 800 °C and the bonded interfaces were still found to be almost bubble- and void-free. Thus, HDP-CVD oxide is quite suitable for direct wafer bonding and layer transfer of ultrathin sSi layers on oxidized Si wafers for the fabrication of novel sSOI substrates.     

An ab initio-based approach to adsorption-desorption behavior of Si adatoms on GaAs(1 1 1)A-(2 × 2) surfaces

The adsorption-desorption behavior of Si adatoms on GaAs(1 1 1)A-(2 × 2) surfaces is investigated using our ab initio-based approach, in which adsorption and desorption behavior of Si adatoms is described by comparing the calculated desorption energy obtained by total-energy electronic-structure calculations with the chemical potential estimated by quantum statistical mechanics. We find that the Si adsorption at the Ga-vacancy site on the (2 × 2) surfaces with As adatoms occurs less than 1140-1590 K while the adsorption without As adatom does less than 630-900 K. The change in adsorption temperature of Si adatoms by As adatoms is due to self-surfactant effects of As adatoms: the promotion of the Si adsorption triggered by As adatoms is found to be interpreted in terms of the band-energy stabilization. Furthermore, the stable temperature range for Si adsorbed surfaces with As adatoms agrees with the experimental results. The obtained results provide a firm theoretical framework to clarify n-type doping processes during GaAs epitaxial growth.     

Adsorption of organic molecules by photochemical reaction on Cl:Si(1 1 1) and H:Si(1 1 1) evaluated by HREELS

The covalent attachment of alkyl groups to silicon surfaces, via carbon-silicon bond formation, has been attempted using gas-surface reactions starting from Cl-terminated Si(1 1 1) or H:Si(1 1 1) under ultraviolet light irradiation. The formation of Cl-terminated Si(1 1 1) and its resulting stability were examined prior to deposition of organic molecules. High-resolution electron energy loss spectroscopy (HREELS) was utilized for detecting surface-bound adsorbates. The detection of photo-deposited organic species on Cl:Si(1 1 1) from gas-phase CH₄ or CH₂CH₂ was not significant. On H:Si(1 1 1), it was evident that after the photoreaction with gas-phase C₂H₅Cl, C₂H₅ groups were chemically bonded to the surface Si atoms through single covalent bonds. The C₂H₅ groups were thermally stable at temperatures below 600 K. Alkyl monolayers prepared on silicon surfaces by dry process will lead to a new prospective technology of nanoscale fabrication and biochemical applications.     

Active oxidation: Silicon etching and oxide decomposition basic mechanisms using density functional theory

The etching of silicon atom from the Si(1 0 0)-p(2 × 2) surface, i.e. the desorption of SiO molecules from this surface, either clean or pre-oxidized, is investigated at the density functional theory level. The reaction paths for desorption are given as a function of the initial oxidation state of the extracted silicon atom. The associated activation energies and the atomic configurations are discussed. Particularly, it is shown that desorption of SiO molecules takes place during conventional thermal oxide growth (∼2 eV activation) via non-oxidized silicon atoms. Further SiO extraction mechanisms of higher silicon oxidation states required higher temperatures. In particular, doubly oxidized silicon atoms (Si²⁺) are able to decompose with an activation of ∼4 eV which corresponds to the actual temperature where decomposition of oxides is observed. This confirms the statement that decomposition of oxide layer nucleates at the interface with silicon where Si²⁺ has been detected thanks to XPS experiment.     

Ageing effects on the wettability behavior of laser textured silicon

In the present work we investigate the ageing of acid cleaned femtosecond laser textured 〈1 0 0〉 silicon surfaces. Changes in the surface structure and chemistry were analysed by Rutherford backscattering spectrometry (RBS) and X-ray photoelectron spectroscopy (XPS), in order to explain the variation with time of the water contact angles of the laser textured surfaces. It is shown that highly hydrophobic silicon surfaces are obtained immediately after laser texturing and cleaning with acid solutions (water contact angle > 120°). However these surfaces are not stable and ageing leads to a decrease of the water contact angle which reaches a value of 80°. XPS analysis of the surfaces shows that the growth of the native oxide layer is most probably responsible for this behavior.     

Effects of post-desorption collisions on the energy distribution of SiCl molecules pulsed-laser desorbed from Cl-covered Si surfaces: Monte-Carlo simulations compared to experiments

Si surfaces covered with up to a monolayer of chlorine by exposure to a low chlorine pressure have been irradiated with nanosecond excimer-laser pulses at a fluence just large enough to melt the surface. Angle-resolved time-of-flight (TOF) distributions and surface temperatures have been measured as a function of chlorine dose between laser pulses. The TOF distributions can be fitted well by Maxwell-Boltzmann (MB) distributions for all coverages and at all desorption angles. With increasing coverage, the intensity and kinetic energy distributions become increasingly peaked along the surface normal. Monte-Carlo simulations of the effect of post-desorption collisions, occurring when many molecules are desorbed within a very short time, reproduce the experimental results quite well. It is shown that just a few collisions per molecule are sufficient to convert any initial desorption distribution into a MB one.     

Adsorption, reaction and desorption of hydrogen on modified Pd(1 1 1) surfaces

The interaction of hydrogen (deuterium) with different modified Pd(1 1 1) surfaces has been investigated. The focus was put on the energy and angel dependence of the desorbing molecules from oxygen covered, potassium covered and vanadium oxide covered surfaces. Conventional adsorption/desorption as well as permeation/desorption experiments were performed. For the oxygen covered surface optimum reaction rates for water production and the energy distribution of the reaction products were determined, both for the reaction of oxygen with molecular hydrogen as well as with atomic hydrogen. Potassium on the surface enhances the activation barrier for hydrogen adsorption resulting in a hyper-thermal desorption flux and a forward focused angular distribution of desorption. Permeation/desorption of deuterium from ultra-thin vanadium oxide films yield mainly thermalized desorbing molecules or slightly hyper-thermal, depending on the oxidation state of the surface oxide.     

Growth of oriented crystalline Ag nanoislands on air-exposed Si(0 0 1) surfaces

Growth of Ag islands under ultrahigh vacuum condition on air-exposed Si(0 0 1)-(2 × 1) surfaces has been investigated by in-situ reflection high energy electron diffraction (RHEED). A thin oxide is formed on Si via exposure of the clean Si(0 0 1)-(2 × 1) surface to air. Deposition of Ag on this oxidized surface was carried out at different substrate temperatures. Deposition at room temperature leads to the growth of randomly oriented Ag islands while well-oriented Ag islands, with (0 0 1)_Ag||(0 0 1)_Si, [1 1 0]_Ag||[1 1 0]_Si, have been found to grow at substrate temperatures of ≥350 °C in spite of the presence of the oxide layer between Ag islands and Si. The RHEED patterns show similarities with the case of Ag deposition on H-passivated Si(0 0 1) surfaces.     

Laser irradiation of chemisorbed oxygen on Si(111): Electronic states and clump formation of SiO2

The laser annealed Si(111) 1×1 surface with chemisorbed oxygen at submonolayer coverages and its irradiation with a ruby laser has been studied with ultraviolet photoelectron spectroscopy and high-resolution electron-energy-loss spectroscopy. The surface oxide which forms directly upon O₂ exposure is found to be similar to that which forms on the Si(111) cleaved 2×1 and the 7×7 reconstructed surfaces. Ruby-laser irradiation converts this surface oxide at submonolayer coverages into clumps of silicon dioxide and regions of clean silicon. Both surface oxides show electronic transitions in the visible and ultraviolet energy region which may be related to known network and point defects in vitreous and crystalline silicon dioxide.     

Graft and characterization of 9-vinylcarbazole conjugated molecule on hydrogen-terminated silicon surface

Using wet chemical reaction between N-vinylcarbazole and hydrogen-terminated silicon surface, we present a new and simple route to directly bond π-conjugated organic molecule on silicon surface. The Si can be in the form of single crystal Si including heavily doped p-type Si, intrinsic Si, heavily doped n-type Si, on Si(1 1 1) and Si(1 0 0), and on n-type polycrystalline Si. The covalent bond between 9-vinylcarbazole and silicon surface was confirmed by reflectance FTIR, XPS and contact angle measurement, respectively. A data-encompassing explanation for the mechanism discusses the possible route of the reaction. This simple and low-costly reaction offers an attractive route to attach functional conjugated molecules onto the semiconductor surface which aims to create some unique molecular device in the future.     

Enhancement effect in photon-stimulated ion desorption for benzene adsorbed on silicon surfaces observed using angle-dependent technique

We have investigated photon-stimulated ion desorption from deuterated benzene (C₆D₆) adsorbed on Si(1 0 0) and Si(1 1 1) surfaces following C 1s core excitation. Using time-of-flight mass spectrometry combined with angle-dependent technique, we measured the dependences of mass-spectra of desorption ions on photon energies and on incident angle (θ) of synchrotron beam. We have found the ion yields for adsorbate-derived fragments of CD⁺ and CD₂⁺ are enhanced in very small angles of incident X-rays. Moreover, molecular orientation effect appeared in excitation energy dependences of D⁺ ions from the Si(1 0 0) and Si(1 1 1) surfaces; that is, ion yield spectra measured at θ = 10° are different from that at θ = 65°. Furthermore, it was found that desorption ion yields increase greatly with decreasing incident angles. The angular dependences are consistently similar for all ion species, excitation energies, and indexes of substrates. Possible desorption processes are described on the basis of the observations.     

Interactions of germanium atoms with silica surfaces

GeH₄ is thermally cracked over a hot filament depositing 0.7-15 ML Ge onto 2-7 nm SiO₂/Si(1 0 0) at substrate temperatures of 300-970 K. Ge bonding changes are analyzed during annealing with X-ray photoelectron spectroscopy. Ge, GeH_x, GeO, and GeO₂ desorption is monitored through temperature programmed desorption in the temperature range 300-1000 K. Low temperature desorption features are attributed to GeO and GeH₄. No GeO₂ desorption is observed, but GeO₂ decomposition to Ge through high temperature pathways is seen above 750 K. Germanium oxidization results from Ge etching of the oxide substrate. With these results, explanations for the failure of conventional chemical vapor deposition to produce Ge nanocrystals on SiO₂ surfaces are proposed.     

Chlorination of Si surfaces with gaseous hydrogen chloride at elevated temperatures

Silicon wafers of different orientations were treated with gaseous hydrogen chloride at elevated temperatures in a chemical vapor deposition (CVD) reactor to generate chlorinated surfaces. After the chlorination process, a smooth surface morphology with single layer steps was observed on Si(1 1 1) surfaces. X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering (RBS) measurements showed that the chlorine coverage is directly affected by the Si surface orientation. The surface chlorine is highly reactive with moisture and alcoholic compounds, which provides a new route for organic molecular functionalization of silicon surfaces.