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1.
Creation of laser-induced morphology features, particularly laser-induced periodic surface structures (LIPSS), by a 532 nm picosecond Nd:YAG laser on crystalline silicon is reported. The LIPSS, often termed ripples, were produced at average laser irradiation fluences of 0.7, 1.6, and 7.9 J cm−2. Two types of ripples were registered: micro-ripples (at micrometer scale) in the form of straight parallel lines extending over the entire irradiated spot, and nano-ripples (at nanometer scale), apparently concentric, registered only at the rim of the spot, with the periodicity dependent on laser fluence. There are indications that the parallel ripples are a consequence of the partial periodicity contained in the diffraction modulated laser beam, and the nano-ripples are very likely frozen capillary waves. The damage threshold fluence was estimated at 0.6 J cm−2.  相似文献   

2.
In this paper the surface topography of titanium samples irradiated by femtosecond laser pulses is described. When the fluence is about 0.5 J/cm2 periodic ripples with a period of about 700 nm are formed. For fluences between 0.5 and 2 J/cm2, a microcolumnar surface texture develops in the center of the irradiated spots and ripples are formed in the periphery of the spots. When experiments are performed with a non-stationary sample, the microcolumns exhibit ripples similar to those observed when the radiation fluence is about 0.5 J/cm2 and in the outer regions of the irradiated areas for fluences between 0.5 and 2 J/cm2. Since the energy distribution in the transverse cross-section of the laser beam is Gaussian, we conclude that the ripples form when the microcolumns are subjected to fluences near the melting threshold of the material at the trailing edge of the moving laser beam.  相似文献   

3.
We present new results on femtosecond LIPSS on silicon, fostering the dynamic model of self-organized structure formation. The first set of experiments demonstrates LIPSS formation by irradiation with a femtosecond white light continuum. The ripples are, as usual, perpendicular to the light polarization with a fluence-dependent wavelength between 500 and 700 nm. At higher dose (fluence × number of shots), the LIPSS turn to much coarser structures. The second set of experiments displays the dose dependence of pattern evolution at about threshold fluence. In contrast to the general case of multi-pulse LIPSS, where a strong dependence of the structures on the laser polarization is observed, single-shot exposition of silicon at about the ablation threshold results in a concentric pattern of very regular sub-wavelength ripples following the oval shape of the irradiated spot, without any reference to the laser polarization. When increasing the number of pulses, the usual, typical ripples develop and then coalesce into broader perpendicular structures, interlaced with remnants of the first, finer ripples.  相似文献   

4.
Surface texturing of the metals, including steels, gained a new dimension with the appearance of femtosecond lasers. These laser systems enable highly precise modifications, which are very important for numerous applications of metals. The effects of a Ti:sapphire femtosecond laser with the pulse duration of 160 fs, operating at 775 nm wavelength and in two operational regimes - single pulse (SP) and scanning regime, on a high quality AISI 1045 carbon steel were studied. The estimated surface damage threshold was 0.22 J/cm2 (SP). Surface modification was studied for the laser fluences of 0.66, 1.48 and 2.37 J/cm2. The fluence of 0.66 J/cm2, in both working regimes, induced texturing of the material, i.e. formation of periodic surface structures (PSS). Their periodicity was in accordance with the used laser wavelength. Finally, changes in the surface oxygen content caused by ultrashort laser pulses were recorded.  相似文献   

5.
Femtosecond laser micromilling of Si wafers   总被引:1,自引:0,他引:1  
Femtosecond laser micromilling of silicon is investigated using a regeneratively amplified 775 nm Ti:Sapphire laser with a pulse duration of 150 fs operating at 1 kHz repetition rate. The morphological observation and topological analysis of craters fabricated by single-shot laser irradiation indicated that the material removal is thermal in nature and there are two distinct ablation regimes of low fluence and higher fluence with logarithmical relations between the ablation depth and the laser fluence. Crater patterns were categorized into four characteristic groups and their formation mechanisms were investigated. Femtosecond laser micromilling of pockets in silicon was performed. The effect of process parameters such as pulse energy, translation speed, and the number of passes on the material removal rate and the formation of cone-shaped microstructures were investigated. The results indicate that the microstructuring mechanism has a strong dependence on the polarization, the number of passes and laser fluence. The optimal laser fluence range for Si micromilling was found to be 2-8 J/cm2 and the milling efficiency attains its maximum between 10 and 20 J/cm2.  相似文献   

6.
Interaction of a nanosecond transversely excited atmospheric (TEA) CO2 laser, operating at 10.6 μm, with tungsten-titanium thin film (190 nm) deposited on silicon of n-type (1 0 0) orientation, was studied. Multi-pulse irradiation was performed in air atmosphere with laser energy densities in the range 24-49 J/cm2. The energy absorbed from the laser beam was mainly converted to thermal energy, which generated a series of effects. The following morphological changes were observed: (i) partial ablation/exfoliation of the WTi thin film, (ii) partial modification of the silicon substrate with formation of polygonal grains, (iii) appearance of hydrodynamic features including nano-globules. Torch-like plumes started appearing in front of the target after several laser pulses.  相似文献   

7.
A simple optical interference method for the fabrication of simply periodic and periodic with a substructure on poly(3,4-ethylene dioxythiophene)-poly(styrene sulfonate) using femtosecond laser interference patterns is demonstrated. The femtosecond laser pulse was split by a diffractive beam splitter and overlapped with two lenses. Homogeneous periodic arrays could be fabricated even using a single laser pulse. In addition, multipulse irradiation resulted in reproducible sub-wavelength ripples oriented perpendicularly to the laser polarization with spatial period from 170 to 220 nm (around one-fourth of the laser wavelength). In addition, the observed size of the spatial period was not affected by the number of incident laser pulses or accumulated energy density. Using high energy pulses it was possible to completely remove the PEDOT:PSS layer without inducing damage to the underneath substrate.  相似文献   

8.
Laser Shock Processing (LSP) has been proposed as a competitive alternative technology to classical treatments for improving fatigue and wear resistance of metals. We present a configuration and results in the LSP concept for metal surface treatments in underwater laser irradiation at 532 nm and 1064 nm. The purpose of the work is to compare the effect of both wavelengths on the same material. A convergent lens is used to deliver 1.2 J/pulse (1064 nm) and 0.9 J/pulse (532 nm) in a 8 ns laser FWHM pulse produced by 10 Hz Q-switched Nd:YAG laser with spots of a 1.5 mm in diameter moving forward along the work piece. A LSP configuration with experimental results using a pulse density of 2500 pulses/cm2 and 5000 pulses/cm2 in 6061-T6 aluminum samples are presented. High level compressive residual stresses are produced using both wavelengths. It has been shown that surface residual stress level is comparable to that achieved by conventional shot peening, but with greater depths. This method can be applied to surface treatment of final metal products.  相似文献   

9.
We present periodic ripples and arrays of protrusions formed on the surface of silicon after irradiation by low-fluence linearly polarized femtosecond laser pulses. Laser-induced periodic surface structures (LIPSS) are observed for irradiation at center wavelengths of 800, ∼ 1300, and ∼ 2100 nm, with the structure periods somewhat less than the incident wavelengths in air. Additionally, we observe structures with spatial periods substantially less than the incident laser wavelengths. These sub-wavelength periodic structures form only when the photon energy is less than the silicon bandgap energy. We discuss a number of factors which may contribute to the generation of this surface morphology.  相似文献   

10.
Interdiffusion phenomena, thermal damage and ablation of W/Si and Si/W bilayers and multilayers under XeCl-excimer laser (=308 nm) irradiation at fluences of 0.15, 0.3 and 0.6 J/cm2 were studied. Samples were prepared by UHV e-beam evaporation onto oxidized Si. The thickness of W and Si layers and the total thickness of the structures were 1–20 nm and 40–100 nm, respectively. 1 to 300 laser pulses were directed to the same irradiation site. At 0.6 J/cm2 the samples were damaged even by a single laser pulse. At 0.3 J/cm2 WSi2 silicide formation, surface roughening and ablation were observed. The threshold for significant changes depends on the number of pulses: it was between 3–10 pulses and 10–30 pulses for bilayers with W and Si surfaces, respectively, and more than 100 pulses for multilayers with the same total thickness of tungsten. At 0.15 J/cm2 the periodicity of the multilayers was preserved. Temperature profiles in layered structures were obtained by numerical simulations. The observed differences of the resistance of various bilayers and multilayers against UV irradiation are discussed.  相似文献   

11.
The laser-induced backside etching of fused silica with gallium as highly absorbing backside absorber using pulsed infrared Nd:YAG laser radiation is demonstrated for the first time. The influence of the laser fluence, the pulse number, and the pulse length on the etch rate and the etched surface topography was studied. The comparable high threshold fluences of about 3 and 7 J/cm2 for 18 and 73 ns pulses, respectively, are caused by the high reflectivity of the fused silica-gallium interface and the high thermal conductivity of gallium. For the 18 and 73 ns long pulses the etch rate rises almost linearly with the laser fluence and reaches a value of 350 and 300 nm/pulse at a laser fluence of about 12 and 28 J/cm2, respectively. Incubation processes are almost absent because etching is already observed with the first laser pulse at all etch conditions and the etch rate is constant up to 30 pulses.The etched grooves are Gaussian-curved and show well-defined edges and a smooth bottom. The roughness measured by interference microscopy was 1.5 nm rms at an etch depth of 0.6 μm. The laser-induced backside etching with gallium is a promising approach for the industrial application of the backside etching technique with IR Nd:YAG laser.  相似文献   

12.
Laser shock processing (LSP) has been proposed as a competitive alternative technology to classical treatments for improving fatigue and wear resistance of metals. We present a configuration and results for metal surface treatments in underwater laser irradiation at 1064 nm. A convergent lens is used to deliver 1.2 J/cm2 in a 8 ns laser FWHM pulse produced by 10 Hz Q-switched Nd:YAG, two laser spot diameters were used: 0.8 and 1.5 mm.Results using pulse densities of 2500 pulses/cm2 in 6061-T6 aluminum samples and 5000 pulses/cm2 in 2024 aluminum samples are presented. High level of compressive residual stresses are produced −1600 MPa for 6061-T6 Al alloy, and −1400 MPa for 2024 Al alloy. It has been shown that surface residual stress level is higher than that achieved by conventional shot peening and with greater depths. This method can be applied to surface treatment of final metal products.  相似文献   

13.
The effect of ultra-short laser-induced morphological changes upon irradiation of silicon with double pulse sequences is investigated under conditions that lead to mass removal. The temporal delay between 12 double and equal-energy pulses (E p=0.24 J/cm2 each, with pulse duration t p=430 fs, 800 nm laser wavelength) was varied between 0 and 14 ps and a decrease of the damaged area, crater depth size and periodicity of the induced subwavelength ripples (by 3–4 %) was observed with increasing pulse delay. The proposed underlying mechanism is based on the combination of carrier excitation and energy thermalization and capillary wave solidification and aims to provide an alternative explanation of the control of ripple periodicity by temporal pulse tailoring. This work demonstrates the potential of pulse shaping technology to improve ultra-fast laser-assisted micro/nanoprocessing.  相似文献   

14.
Bone implants made of metal, often titanium or the titanium alloy Ti6Al4V, need to be surface treated to become bioactive. This enables the formation of a firm and durable connection of the prosthesis with the living bone. We present a new method to uniformly cover Ti6Al4V with a thin layer of ceramics that imitates bone material. These calcium alkali phosphates, called GB14 and Ca10, are applied to the metal by dip coating of metal plates into an aqueous slurry containing the fine ceramic powder. The dried samples are illuminated with the 790 nm radiation of a pulsed femtosecond laser. If the laser fluence is set to a value just below the ablation threshold of the ceramic (ca. 0.4 J/cm2) the 30 fs laser pulses penetrate the partly transparent ceramic layer of 20-40 μm thickness. The remaining laser fluence at the ceramic-metal interface is still high enough to generate a thin metal melt layer leading to the ceramic fixation on the metal. The laser processing step is only possible because Ti6Al4V has a lower ablation threshold (between 0.1 and 0.15 J/cm2) than the ceramic material. After laser treatment in a fluence range between 0.1 and 0.4 J/cm2, only the particles in contact with the metal withstand a post-laser treatment (ultrasonic cleaning). The non-irradiated rest of the layer is washed off. In this work, we present results of a successful ceramic fixation extending over larger areas. This is fundamental for future applications of arbitrarily shaped implants.  相似文献   

15.
The study of the laser pulse duration effect on the silicon micro-spikes morphology is presented. The microcones were produced by ultraviolet (248 nm) laser irradiation of doped Si wafers in SF6 environment. The laser pulse duration was adjusted at 450 fs, 5 ps and 15 ns. We have analyzed the statistical nature of the spikes’ morphological characteristics, such as periodicity and apex angle by exploiting image processing techniques, on SEM images of the irradiated samples. The correlation of the quantitative morphological characteristics with the laser parameters (pulse duration, laser fluence and number of pulses) provides new insight on the physical mechanisms, which are involved on the formation of Si microcones.  相似文献   

16.
Subwavelength ripples (<λ/4) are obtained by scanning a tightly focused beam (∼1 μm) of femtosecond laser radiation (λ = 800 nm, tp = 100 fs) over the surface of either bulk fused silica and silicon and Er:BaTiO3. The ripple pattern extends coherently over many overlapping laser pulses parallel and perpendicular to the polarisation. Investigated are the dependence of the ripple spacing on the spacing of successive pulses, the direction of polarisation and the material. The evolution of the ripples is investigated by applying pulse bursts with N = 1 to 20 pulses. The conditions under which these phenomena occur are specified, and some possible mechanisms of ripple growth are discussed. Potential applications are presented.  相似文献   

17.
Laser-induced periodic surface structures with different spatial characteristics have been observed after multiple linearly polarized femtosecond laser pulse (120 fs, 800 nm, 1 Hz to 1 kHz pulse repetition frequency) irradiation on alloys. With the increasing number of pulses, nanoripples, classical ripples and modulation ripples with a period close to half of classical ripples have all been induced. The generation of second-harmonic has been supposed to be the main mechanism in the formation of modulation ripples.  相似文献   

18.
We report the formation of directionally ordered nano-scale surface domains on the +z face of undoped congruent lithium niobate single crystals by using UV illumination through a phase mask of sub-micron periodicity with an energy fluence between ∼90 mJ/cm2 and 150 mJ/cm2 at λ = 266 nm. We clearly show here that the UV-induced surface ferroelectric domains only nucleate at and propagate along maxima of laser intensity. Although the domain line separation varies and is greater than 2 μm for this set of experimental conditions, this enables a degree of control over the all-optical poling process.  相似文献   

19.
We report a study of the formation of tungsten silicide at the W-Si interface, induced by multipulse (up to 300 shots) XeCl excimer-laser irradiation of W(150 nm)/Si and W(500 nm)/Si samples. Laser fluences ranging from 0.6 to 1.8 J/cm2 were used. After laser treatment the samples were examined by different diagnostic techniques: Rutherford backscattering spectrometry, X-ray scattering, resistometry, and surface profilometry. Numerical computations of the evolution and depth profiles of the temperature in the samples as a consequence of a single 30 ns laser pulse were performed as well. The results indicate that it is possible to obtain a tungsten silicide layer at the W-Si interface at quite low fluences. The layer thickness increases with the number of laser pulses. Complete reaction of the 150 nm thick W film with silicon was obtained at the fluence of 1.2 J/cm2 between 30 and 100 laser pulses and at 1.5 J/cm2 after 30 laser pulses. The sheet resistance of these silicides was 5–10 . At the used fluences for the 500 nm thick W film only the onset of silicide synthesis at the W-Si interface was observed.  相似文献   

20.
Femtosecond laser (180 fs, 775 nm, 1 kHz) ablation characteristics of the nickel-based superalloy C263 are investigated. The single pulse ablation threshold is measured to be 0.26±0.03 J/cm2 and the incubation parameter ξ=0.72±0.03 by also measuring the dependence of ablation threshold on the number of laser pulses. The ablation rate exhibits two logarithmic dependencies on fluence corresponding to ablation determined by the optical penetration depth at fluences below ∼5 J/cm2 (for single pulse) and by the electron thermal diffusion length above that fluence. The central surface morphology of ablated craters (dimples) with laser fluence and number of laser pulses shows the development of several kinds of periodic structures (ripples) with different periodicities as well as the formation of resolidified material and holes at the centre of the ablated crater at high fluences. The debris produced during ablation consists of crystalline C263 oxidized nanoparticles with diameters of ∼2–20 nm (for F=9.6 J/cm2). The mechanisms involved in femtosecond laser microprocessing of the superalloy C263 as well as in the synthesis of C263 nanoparticles are elucidated and discussed in terms of the properties of the material.  相似文献   

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