Temperature dependence of rotational relaxation of methane in the 2ν3 vibrational state by self- and nitrogen-collisions and comparison with line broadening measurements

Depopulation rates of rotational levels in the v₃ = 2 vibrational state of ¹²CH₄ are investigated by a pump-probe technique. Methane molecules are excited into selected rotational levels by tuning the pump laser to 2ν₃ lines. The time evolution in population of the excited level after the pumping pulse is monitored by tuning the probe laser to a (3ν₃ ← 2ν₃) line corresponding to a transition with the excited rotational level as the lower level. Measurements were performed from room temperature down to 100 K in pure CH₄ and in CH₄-N₂ mixtures. The rotational relaxation rate coefficients are given for the J = 1, A₂, J = 1, E, J = 1, F₂ and J = 0, F₂ levels. The results are compared with the available data on line broadening coefficients. The temperature dependence of the data on N₂-broadening is particularly well reproduced by the power law deduced from the results on rotational relaxation.     

Microstructuring of fused silica by laser-induced backside wet etching using picosecond laser pulses

The laser-induced backside wet etching (LIBWE) is an advanced laser processing method used for structuring transparent materials. LIBWE with nanosecond laser pulses has been successfully demonstrated for various materials, e.g. oxides (fused silica, sapphire) or fluorides (CaF₂, MgF₂), and applied for the fabrication of microstructures. In the present study, LIBWE of fused silica with mode-locked picosecond (t_p = 10 ps) lasers at UV wavelengths (λ₁ = 355 nm and λ₂ = 266 nm) using a (pyrene) toluene solution was demonstrated for the first time. The influence of the experimental parameters, such as laser fluence, pulse number, and absorbing liquid, on the etch rate and the resulting surface morphology were investigated. The etch rate grew linearly with the laser fluence in the low and in the high fluence range with different slopes. Incubation at low pulse numbers as well as a nearly constant etch rate after a specific pulse number for example were observed. Additionally, the etch rate depended on the absorbing liquid used; whereas the higher absorption of the admixture of pyrene in the used toluene enhances the etch rate and decreases the threshold fluence. With a λ₁ = 266 nm laser set-up, an exceptionally smooth surface in the etch pits was achieved. For both wavelengths (λ₁ = 266 nm and λ₂ = 355 nm), LIPSS (laser-induced periodic surface structures) formation was observed, especially at laser fluences near the thresholds of 170 and 120 mJ/cm², respectively.     

Molecular species adsorbed on soot particles issued from low sooting methane and acetylene laminar flames: A laser-based experiment

Recent advances in the field of laser desorption/laser ionization mass spectrometry (LD/LI/MS) have renewed interest in these separation methods for fast analysis of chemical species adsorbed on soot particles. These techniques provide mass-separation of the desorbed phase with high selectivity and sensitivity and require very small soot samples. Combining LD/LI/MS with in situ measurements of soot and gaseous species is very promising for a better understanding of the early stage of soot growth in flames. In this work, three lightly sooting laminar jet flames (a methane diffusion flame and two premixed acetylene flames of equivalence ratio (?) = 2.9 and 3.5) were investigated by combining prompt and 50 ns-delayed laser-induced incandescence (LII) for spatially resolved measurements of soot volume fraction (f_v) and laser-induced fluorescence (LIF) of polycyclic aromatic hydrocarbons (PAH). Soot and PAH calibration is performed by two-colour cavity ring-down spectroscopy (CRDS) at 1064 and 532 nm. Soot particles were sampled in the flames and analysed by LD/LI/Time-of-flight- MS. Soot samples are cooled to −170 °C to avoid adsorbed phase sublimation (under high vacuum in the TOF-MS). Our set-up is novel because of its ability to measure very low concentration of soot and PAH together with the ability to identify a large mass range of PAHs adsorbed on soot, especially volatile two-rings and three-rings PAHs. Studied flames exhibited a peak f_v ranging from 15 ppb (acetylene, ? = 2.9) to 470 ppb (acetylene, ? = 3.5). Different mass spectra were found in the three flames, each exhibiting one predominant PAH mass; 202 amu (4-rings) in methane, 178 amu (3-rings) in acetylene,? = 2.9 and 128 amu (2-rings) in acetylene, ? = 3.5. These variations with flame condition contrasts with other recent studies and is discussed. The other PAH masses ranged from 102 (C₈H₆) to 424 amu (C₃₄H₁₆) and are well predicted by the stabilomer grid of Stein and Farr.     

Modification of Cd1−xMnxTe crystal surface layers by nanopulsed laser irradiation

The surface modification of Cd_1−xMn_xTe (x = 0-0.3) crystal wafers under pulsed laser irradiation has been studied. The samples were irradiated by a Q-switched ruby laser with pulse duration of 80 ns. Optical diagnostics of laser-induced thermal processes were carried out by means of time-resolved reflectivity measurements at wavelengths 0.53 and 1.06 μm. Laser irradiation energy density, E varied in the range of 0.1-0.6 J/cm². Morphology of irradiated surface was studied using scanning electron microscopy. The energy density whereby the sample surface starts to melt, depends on Mn content and is equal to 0.12-0.14 J/cm² for x ≤ 0.2, in the case of x = 0.3 this value is about 0.35 J/cm². The higher Mn content leads to higher melt duration. The morphology of laser irradiated surface changes from a weakly modified surface to a single crystal strained one, with an increase in E. Under irradiation with E in the range of 0.21-0.25 J/cm², the oriented filamentary crystallization is observed. The Te inclusions on the surface are revealed after the irradiation of samples with small content of Mn.     

Laser synthesis of thin layers of In4Se3, In4Te3 and modification of their structure and characteristics

Trends of structural modifications and phase composition occurring in In₄Se₃ thin films and In₄Se₃-In₄Te₃ epitaxial heterojunctions under laser irradiations have been investigated. Dynamics of the layer structure modification, depending on laser modes, i.e. pulse duration τ = 2-4 ms, irradiation intensity I₀ = 10-50 kW/cm², number of pulses N = 5-50, was studied by electron microscopy. An increase in laser influence promotes enlargement of the layer grains and transformation of their polycrystalline structure towards higher degree of stoichiometry. As a result of laser solid restructuring heterojunctions of In₄Se₃-In₄Te₃, being photosensitive within 1.0-2.0 μm and showing fast time of response, have been obtained. Laser modification of structure enables one to optimize electrical and optical properties of functional elements on the base of thin films and layers of In₄Se₃, In₄Te₃, widely used as infrared detectors and filters.     

Effects of indium doping on the superconducting properties of YBa2Cu3Oy sintered compounds and thin films

We investigated the effects of indium doping on the superconducting properties of YBCO sintered samples and thin films. In₂O₃-doped YBCO and YBa₂Cu_3−xIn_xO_y sintered samples showed a gradual decrease in the critical temperature (T_c) with increasing indium content; however, a T_c value above 80 K was maintained even up to 30 vol.% addition and x = 0.4, respectively. Ba₃Cu₃In₄O₁₂ was detected by X-ray diffractometry and energy-dispersive X-ray spectroscopy as a reaction product for both sintered samples. The normalized J_c under a magnetic field of 0.1 T showed a maximum at x = 0.3. Indium-doped YBCO films prepared by pulsed laser deposition showed a similar dependence of T_c on indium content as the sintered samples.     

Highly efficient Nd:GdVO4/BiBO laser at 456 nm under direct 880 nm diode laser pumping

The continuous-wave high-efficiency laser emission of Nd:GdVO₄ at the second-harmonic of 456 nm obtained by intracavity frequency doubling with an BiB₃O₆(BiBO) nonlinear crystal is investigated under pumping by diode laser at 880 nm into emitting level ⁴F_3/2. About 3.8 W at 456 nm with M² = 1.4 was obtained from a 5 mm-thick 0.4 at.% Nd:GdVO₄ laser medium and a 12 mm-long BiBO nonlinear crystal in a Z-type cavity for 13.9 W absorbed pump power. An optical-to-optical efficiency with respect to the absorbed pump power was 0.274. Comparative results obtained for the pump with diode laser at 808 nm, into the highly-absorbing ⁴F_5/2 level, are given in order to prove the advantages of the 880 nm wavelength pumping.     

Low-temperature deposition of α-Al2O3 films by laser chemical vapor deposition using a diode laser

We prepared Al₂O₃ films by laser chemical vapor deposition (LCVD) using a diode laser and aluminum acetylacetonate (Al(acac)₃) precursors and investigated the effects of laser power (P_L), deposition temperature (T_dep), and total pressure (P_tot) in a reaction chamber on the crystal phase, microstructure, and deposition rate (R_dep). An amorphous phase was obtained at P_L = 50 W, whereas an α-phase was obtained at P_L > 100 W. At P_L = 150 and 200 W (1 0 4)- and (0 1 2)-oriented α-Al₂O₃ films were obtained, respectively. The R_dep of α-Al₂O₃ films increases with decreasing P_L and P_tot. Single-phase α-Al₂O₃ film was obtained at T_dep = 928 K, which is about 350 K lower than that obtained by conventional thermal CVD using Al(acac)₃ precursor.     

Pulsed laser deposition of fluoride glass thin films

The development of integrated waveguide lasers for different applications such as marking, illumination or medical technology has become highly desirable. Diode pumped planar waveguide lasers emitting in the green visible spectral range, e.g. thin films from praseodymium doped fluorozirconate glass matrix (called ZBLAN, owing to the main components ZrF₄, BaF₂, LaF₃, AlF₃ and NaF) as the active material pumped by a blue laser diode, have aroused great interest. In this work we have investigated the deposition of Pr:ZBLAN thin films using pulsed laser radiation of λ = 193 and λ = 248 nm. The deposition has been carried out on MgF₂ single crystal substrates in a vacuum chamber by varying both processing gas pressure and energy fluence. The existence of an absorption line at 210 nm in Pr:ZBLAN leads to absorption and radiative relaxation of the absorbed laser energy of λ = 193 nm preventing the evaporation of target material. The deposited thin films consist of solidified and molten droplets and irregular particulates only. Furthermore, X-ray radiation has been applied to fluoride glass targets to enhance the absorption in the UV spectral region and to investigate the deposition of X-ray treated targets applying laser radiation of λ = 248 nm. It has been shown that induced F-centres near the target surface are not thermally stable and can be easily ablated. Therefore, λ = 248 nm is not suitable for evaporation of Pr:ZBLAN.     

Structure and properties of transparent conductive doped ZnO films by pulsed laser deposition

High quality transparent conductive ZnO thin films were deposited on quartz glass substrates using pulsed laser deposition (PLD). We varied the growth conditions such as the substrate temperature and oxygen pressure. X-ray diffraction (XRD), X-ray photoelectron spectrometer (XPS), and atomic force microscopy (AFM) measurements were done on the samples. All films show n-type conduction, the best transparent conductive oxide (TCO) performance (Al-doped ZnO = 1.33 × 10⁻⁴ Ω cm, Ga-doped ZnO = 8.12 × 10⁻⁵ Ω cm) was obtained on the ZnO film prepared at pO₂ = 5 mTorr and T_s = 300 °C.     

Ablation characteristics of aluminum oxide and nitride ceramics during femtosecond laser micromachining

Femtosecond laser ablation of aluminum oxide (Al₂O₃) and aluminum nitride (AlN) ceramics was performed under normal atmospheric conditions (λ = 785 nm, τ_p = 185 fs, repetition rate = 1 kHz), and threshold laser fluencies for single- and multi-pulse ablation were determined. The ablation characteristics of the two ceramics showed similar trends except for surface morphologies, which revealed virtually no melting in Al₂O₃ but clear evidence of melting for AlN. Based on subsequent X-ray photoelectron spectroscopy (XPS) analyses, the chemistry of these ceramics appeared to remain the same before and after femtosecond laser ablation.     

Reentrant resistance via spin-polarized quasiparticle self injection in CMR/HTSC heterostructures

Epitaxial superlattices of half-metal, colossal magnetoresistive La_2/3Ca_1/3MnO₃ (HM-CMR) and high-T_c superconducting YBa₂Cu₃O_7-δ (HTSC) are grown with thick and thin modulation lengths (Λ) of YBCO/LCMO, with Λ = 280 nm and 12.5 nm; respectively, on SrTiO₃ (0 0 1) single-crystalline substrates by pulsed laser deposition. Transport measurements R(T) show a resistive state below T = 35 K although the superconducting transition temperature is found to be T_c = 60 K and 63 K for both different superlattices, respectively. The onset of the resistive state coincides with a magnetic transition of the samples. This can be explained by a diffusion of spin-polarized quasiparticles into the superconducting film. Which can be considered as evidence for inverse-proximity effects over a wide temperature range in HM-CMR/HTSC heterostructures.     

Subwavelength ripple formation induced by tightly focused femtosecond laser radiation

Subwavelength ripples (<λ/4) are obtained by scanning a tightly focused beam (∼1 μm) of femtosecond laser radiation (λ = 800 nm, t_p = 100 fs) over the surface of either bulk fused silica and silicon and Er:BaTiO₃. The ripple pattern extends coherently over many overlapping laser pulses parallel and perpendicular to the polarisation. Investigated are the dependence of the ripple spacing on the spacing of successive pulses, the direction of polarisation and the material. The evolution of the ripples is investigated by applying pulse bursts with N = 1 to 20 pulses. The conditions under which these phenomena occur are specified, and some possible mechanisms of ripple growth are discussed. Potential applications are presented.     

Influence of laser power on the orientation and microstructure of CeO2 films deposited on Hastelloy C276 tapes by laser chemical vapor deposition

CeO₂ films were prepared on LaMnO₃/MgO/Gd₂Zr₂O₇ multi-coated Hastelloy C276 tapes by laser chemical vapor deposition at different laser power (P_L) from 46 to 101 W. Epitaxial (1 0 0) CeO₂ films were prepared at P_L = 46-93 W (deposition temperature, T_dep = 705-792 K). Epitaxial CeO₂ films had rectangular-shaped grains at P_L = 46-77 W (T_dep = 705-754 K), while square-shaped grains were obtained at P_L = 85-93 W (T_dep = 769-792 K). CeO₂ films showed a columnar microstructure. Epitaxial (1 0 0) CeO₂ films with rectangular grains exhibited full width at half maximum of ω-scan on (2 0 0) reflection and ?-scan on (2 2 0) reflection of 3.4-3.2° and 6.0-7.2°, respectively. The deposition rate of the epitaxial (1 0 0) CeO₂ films had a maximum of 4.6 μm h⁻¹ at P_L = 77 W (T_dep = 754 K).     

Flexible gratings fabricated in polymeric plate using femtosecond laser irradiation

Flexible gratings embedded in poly-dimethlysiloxane (PDMS) were fabricated using femtosecond laser pulses. Photo-induced gratings in a flexible PDMS plate were directly written by a high-intensity femtosecond (130 fs) Ti: Sapphire laser (λ_p=800 nm). Refractive index modifications with 4 μm diameters were photo-induced after irradiation of the femtosecond pulses with peak intensities of more than 1×10¹¹ W/cm². The graded refractive index profile was fabricated to be symmetric around the center of the focal point. The diffraction efficiency of the grating samples is measured by an He-Ne laser. The maximum value of refractive index change (Δn) in the laser-modified regions was estimated to be approximately 3.17×10⁻³.     

Particulate assisted growth of ZnO nanorods and microrods by pulsed laser deposition

Zinc oxide (ZnO) thin films were deposited on the gallium nitride (GaN) and sapphire (Al₂O₃) substrates by pulsed laser deposition (PLD) without using any metal catalyst. The experiment was carried out at three different laser wavelengths of Nd:YAG laser (λ = 1064 nm, λ = 532 nm) and KrF excimer laser (λ = 248 nm). The ZnO films grown at λ = 532 nm revealed the presence of ZnO nanorods and microrods. The diameter of the rods varies from 250 nm to 2 μm and the length varies between 9 and 22 μm. The scanning electron microscopy (SEM) images of the rods revealed the absence of frozen balls at the tip of the ZnO rods. The growth of ZnO rods has been explained by vapor-solid (V-S) mechanism. The origin of growth of ZnO rods has been attributed to the ejection of micrometric and sub-micrometric sized particulates from the ZnO target. The ZnO films grown at λ = 1064 nm and λ = 248 nm do not show the rod like morphology. X-ray photoelectron spectroscopy (XPS) has not shown the presence of any impurity except zinc and oxygen.     

Diode-pumped Yb:KYW thin-disk laser operation with wavelength tuning to small quantum defects

We present continuous wave laser operation of a diode-pumped Yb:KY(WO₄)₂ thin-disk laser with 10.7 W output power, M² = 1.3 and an optical efficiency of 49% at room temperature. Wavelength tuning in a range of 64 nm and lasing with a quantum defect of 0.6% is demonstrated.     

Electro-optic Q-switched intracavity optical parametric oscillator at 1.53 μm based on KTiOAsO4

An eye-safe, high peak power optical parameter oscillator (OPO) intracavity pumped by electro-optic Q-switched Nd:YAG laser is presented. This OPO is based on a 20 mm length KTiOAsO₄ crystal with non-critical phase matching (θ = 90°, ?=0°) cut. An aperture ∅3 mm acted as limiting diaphragm to get good beam quality of pumping laser. The output energy of 25 mJ at the signal wavelength 1.53 μm was obtained with repetition rate of 1 Hz. The highest peak power intensity was up to 88 MW/cm² with pulse width of 4 ns. Without diaphragm, the maximum output energy of 90 mJ was achieved with area of light spot (∅6 mm) four times larger, but the peak power intensity was lower.     

Competition between green and infrared emission in Er:YLiF4 upconversion lasers

The competition between two laser transitions in Er:YLiF₄ (⁴S_3/2 → ⁴I_15/2 at 551 nm and ⁴S_3/2 → ⁴I_13/2 at 850 nm) is studied using a model based on rate equations. The laser emission is pumped by upconversion at 795 nm; for comparison, we also discuss upconversion pumping by another mechanism, at 970 nm. The conditions that favor laser emission in various regimes on these two transitions are found.     

Interference of resonance luminescence of exciton polaritons in CuGaS2 crystals

The nonmodulated and wavelength-modulated reflection spectra of CuGaS₂ crystals for the polarization EIIc of 10 K are studied. The states n = 1, 2 and 3 of the excitons Γ₄ (A-excitons) and n = 1, n = 2 of B- and C-excitons are found. The nonmodulated absorption spectra for the polarization E⊥c at 10 K have been studied. The states n = 1, 2 and 3 of Γ₅ excitons are found. The main parameters of the A (Γ₄, Γ₅) and B, C exciton series at the energies of the longitudinal and transverse excitons Γ₄ for the states n = 1 and n = 2, the effective masses of electrons and holes are determined. The photoluminescence peaks were observed at n = 3 and n = 4 of the excitons Γ₅ in the luminescence spectra excited by the line 4880 Å of Ar⁺ laser. In the luminescence spectra the interference is found.