Diffusion of rhodium layers on the stepped surface of a tungsten micro-crystal

We have investigated the spreading of rhodium at coverages of 0.25, 0.5, 1, 2 and 3 ML over the curved surface of a field emitter tip using field electron microscopy. We have found that the activation energy of spreading as well as the prefactor for the diffusivity depend strongly on the thickness of the layer diffusing, due to a change in interactions in the adsorbate-substrate system. The derived average activation energy for spreading first decreases from E_dif = 1.32 eV/atom at Θ = 0.25 ML to E_dif = 0.71 eV at Θ ≈ 2 ML and than rises again to E_dif = 1.20 eV at Θ ≈ 3 ML. The prefactor for the diffusivity D₀ also decreases with increasing coverage from 0.5 to 1 ML, and stays almost constant for multilayer diffusion in a range of few orders of magnitude lower than for single atom diffusion. We register typical spreading behavior with a sharp moving boundary in the (0 1 1)-(0 0 1) zone of the tip and an unusual picture of diffusion in the (0 1 1)-(1 1 2) region of the tip. In the second region diffusion proceeds without a sharp boundary, independent of the thickness of the moving layer. We think that such an unusual picture can be caused by the change in composition of the second and next layers of adsorbing material due to the early stage of faceting observed in this region of the tip at higher temperature. The results are compared with data for diffusion of individual Rh atoms and small clusters; to understand the observed diffusion we propose taking account of the atomic surface structure of the substrate, modified by strong interactions of the Rh adsorbate with the W micro-crystal surface.     

Core-level shifts at the Pt/W(1 1 0) monolayer bimetallic interface

We have measured W and Pt 4f_7/2 core-level photoemission spectra from interfaces formed by ultrathin Pt layers on W(1 1 0), completing our core-level measurements of W(1 1 0)-based bimetallic interfaces involving the group-10 metals Ni, Pd, and Pt. With increasing Pt coverage the sequence of W spectra can be described using three interfacial core-level peaks with binding-energy (BE) shifts (compared to the bulk) of −0.220 ± 0.015, −0.060 ± 0.015, and +0.110 ± 0.010 eV. We assign these features to 1D, 2D pseudomorphic (ps), and 2D closed-packed (cp) Pt phases, respectively. For ∼1 ps ML the Pt 4f_7/2 BE is 71.40 ± 0.02 eV, a shift of +0.46 ± 0.09 eV with respect to the BE of bulk Pt metal. The W 4f_7/2 core-level shifts induced by all three adsorbates are semiquantitatively described by the Born-Haber-cycle based partial-shift model of Nilsson et al. [39]. As with Ni/W(1 1 0), the difference in W 4f_7/2 binding energies between ps and cp Pt phases has a large structural contribution. The Pt 4f lineshape is consistent with a small density of states at the Fermi level, reflective of the Pt monolayer having noble-metal-like electronic structure.     

Alloy formation of Co/Ni/Pt(1 1 1)

The initial growth and alloy formation of ultrathin Co films deposited on 1 ML Ni/Pt(1 1 1) were investigated by Auger electron spectroscopy (AES), low energy electron diffraction (LEED), and ultraviolet photoelectron spectroscopy (UPS). A sequence of samples of d_Co Co/1 ML Ni/Pt(1 1 1) (d_Co = 1, 2, and 3 ML) were prepared at room temperature, and then heated up to investigate the diffusion process. The Co and Ni atoms intermix at lower annealing temperature, and Co-Ni intermixing layer diffuses into the Pt substrate to form Ni-Co-Pt alloys at higher annealing temperature. The diffusion temperatures are Co coverage dependent. The evolution of UPS with annealing temperatures also shows the formation of surface alloys. Some interesting LEED patterns of 1 ML Co/1 ML Ni/Pt(1 1 1) show the formation of ordered alloys at different annealing temperature ranges. Further studies in the Curie temperature and concentration analysis, show that the ordered alloys corresponding to different LEED patterns are Ni_xCo_1−xPt and Ni_xCo_1−xPt₃. The relationship between the interface structure and magnetic properties was investigated.     

Thermo-stimulated surface segregation in the ordering alloy Pt80Co20(1 1 1): Experiment and modeling

In this paper, a method of Ionization Spectroscopy (IS) is proposed for the non-destructive layer-by-layer analysis of the elemental composition of a solid surface. Using ionization energy loss spectra, a layer-by-layer concentration profile of the Pt₈₀Co₂₀(1 1 1) alloy surface is obtained for different annealing temperatures. For the disordered Pt₈₀Co₂₀(1 1 1) at room temperature, the first atomic layer consists of pure Pt with damped oscillations in the deeper layers. Heating the sample reduces the oscillations. However, at a temperature of 823 K, a sandwich-like structure of the type Pt/Co/Pt was found in the first three atomic layers. For the ordered state the first atomic layer also consists of pure Pt with bulk concentration in other layers. LEED analysis shows a p(2 × 2) superstructure for the surface of the ordered Pt₈₀Co₂₀(1 1 1) alloy. The segregation behavior in this alloy is further studied by Monte Carlo (MC) simulations combined with the Constant Bond Energy (CBE) model. The results of the MC simulations agree well with the experiments at the higher temperatures, both for the surface composition and the concentration depth profile. At lower temperatures, some discrepancies exist between the MC results and the measured concentration profile.     

Osmium's Debye temperature

Osmium's Debye characteristic temperature Θ_D remains uncertain. We tabulate 20 reported values that average 411±94 K, for a property that one should know within about 1%. We report a new value derived from low-temperature monocrystal elastic-constant measurements extrapolated to 0 K: Θ_D=477±2 K. Our value disagrees with all previous reports except one specific-heat measurement. It agrees with Mendeleev-table expectations and with an a priori calculation.     

Density functional theory study of hydrogenation mechanism in Fe-doped Mg(0 0 0 1) surface

Using density functional theory (DFT) in combination with nudged elastic band (NEB) method, the dissociative chemisorptions and diffusion processes of hydrogen on both pure and Fe-doped Mg(0 0 0 1) surfaces are studied. Firstly, the dissociation pathway of H₂ and the relative barrier were investigated. The calculated dissociation barrier (1.08 eV) of hydrogen molecule on a pure Mg(0 0 0 1) surface is in good agreement with comparable experimental and theoretical studies. For the Fe-doped Mg(0 0 0 1) surface, the activated barrier decreases to 0.101 eV due to the strong interaction between the s orbital of H and the d orbital of Fe. Then, the diffusion processes of atomic hydrogen on pure and Fe-doped Mg(0 0 0 1) are presented. The obtained diffusion barrier to the first subsurface is 0.45 eV and 0.98 eV, respectively. Finally, Chou method was used to investigate the hydrogen sorption kinetic mechanism of pure MgH₂ and Mg mixed with 5 at.% Fe atoms composites. The obtained activation energies are 0.87 ± 0.02 and 0.31 ± 0.01 eV for H₂ dissociation on the pure surface and H atom diffusion in Fe-doped Mg surfaces, respectively. It suggests that the rate-controlling step is dissociation of H₂ on the pure Mg surface while it is diffusion of H atom in the Fe-doped Mg surface. And both of fitting data are matching well with our calculation results.     

Growth and thermal evolution of submonolayer Pt films on Ru(0 0 0 1) studied by STM

The growth of submonolayer Pt on Ru(0 0 0 1) has been studied with scanning tunneling microscopy. We focus on the island evolution depending on Pt coverage θ_Pt, growth temperature T_G and post-growth annealing temperature T_A. Dendritic trigonal Pt islands with atomically rough borders are observed at room temperature and moderate deposition rates of about 5 × 10⁻⁴ ML/s. Two types of orientation, rotated by 180° and strongly influenced by minute amounts of oxygen are observed which is ascribed to nucleation starting at either hcp or fcc hollow sites. The preference for fcc sites changes to hcp in the presence of about one percent of oxygen. At lower growth temperatures Pt islands show a more fractal shape. Generally, atomically rough island borders smooth down at elevated growth temperatures higher than 300 K, or equivalent annealing temperatures. Dendritic Pt islands, for example, transform into compact, almost hexagonal islands, indicating similar step energies of A- and B-type of steps. Depending on the Pt coverage the thermal evolution differs somewhat: While regular islands on Ru(0 0 0 1) are formed at low coverages, vacancy islands are observed close to completion of the Pt layer.     

Interactions of germanium atoms with silica surfaces

GeH₄ is thermally cracked over a hot filament depositing 0.7-15 ML Ge onto 2-7 nm SiO₂/Si(1 0 0) at substrate temperatures of 300-970 K. Ge bonding changes are analyzed during annealing with X-ray photoelectron spectroscopy. Ge, GeH_x, GeO, and GeO₂ desorption is monitored through temperature programmed desorption in the temperature range 300-1000 K. Low temperature desorption features are attributed to GeO and GeH₄. No GeO₂ desorption is observed, but GeO₂ decomposition to Ge through high temperature pathways is seen above 750 K. Germanium oxidization results from Ge etching of the oxide substrate. With these results, explanations for the failure of conventional chemical vapor deposition to produce Ge nanocrystals on SiO₂ surfaces are proposed.     

Atom geometry of nanostructured Fe films grown on c(2 × 2)-N/Cu(1 0 0) surface: An investigation by X-ray absorption spectroscopy with multishell analysis

We investigated the growth of Fe nanostructured films on c(2 × 2)-N/Cu(1 0 0) surface with Fe K-edge X-ray absorption fine structure (XAFS) in the near edge and in the extended energy region. The high photon flux of the incident X-rays allowed us to perform multishell analysis of the XAFS oscillations for Fe coverage Θ_Fe < 1 ML. This data analysis yields a detailed investigation of the atom geometry and some insights in the film morphology. At Θ_N < 0.5 ML (N saturation coverage) there is absence of contribution to XAFS from N atoms. First shell analysis of linearly polarized XAFS gives Fe-Fe (or Fe-Cu) bond length values varying between R₁ = 2.526 ± 0.006 Å at the highest Fe coverage (3 ML ) and R₁ = 2.58 ± 0.01 Å at Θ_Fe = 0.5 ML, Θ_N = 0.3 ML, with incidence angle Θ = 35°. These values are different from the case of bcc Fe (R = 2.48 Å), and compatible with fcc Fe (R₁ = 2.52 Å) and fcc Cu (R₁ = 2.55 Å). At the Fe lowest coverage (Θ_Fe = 0.5 ML) the dependence of R₁ on the incidence angle indicates expansion of the outmost layer. Near edge spectra and multishell analysis can be well reproduced by fcc geometry with high degree of static disorder. At N saturation pre-coverage (Θ_N = 0.5 ML) the XAFS analysis has to keep into account the Fe-N bonding. The results suggest two different adsorption sites: one with Fe in a fcc hollow site, surrounded by other metal atoms as nearest neighbours, and one resulting from an exchange with a Cu atom underneath the N layer.     

Sticking coefficient of nitrogen on solid N2 at low temperatures

The sticking coefficient of nitrogen gas on a thick solid nitrogen film on a copper cold finger was studied at low temperature. For surface temperatures of about 12 K the sticking coefficient is measured to be 99.0 ± 0.6%. Our result implies that it will be possible to make a intense and high brightness slow positron source starting from a small diameter deposit of the gaseous positron emitter ¹³N₂ produced in the reaction ¹²C(d,n)¹³N.     

Adsorption of iso-butane on ZnO(0 0 0 1)-Zn

Presented are thermal desorption spectroscopy (TDS) and adsorption probability measurements of iso-butane on the Zn-terminated surface of ZnO. The initial adsorption probability, S₀, decreases linearly from 0.57 to 0.22 (±0.02) with impact energy, E_i = 0.74-1.92 eV, and is independent of adsorption temperature, T_s = 91-114 K (±5 K), indicating non-activated molecular adsorption. The coverage, Θ, dependent adsorption probabilities, S(Θ), show a cross-over from adsorbate-assisted adsorption (S increases with Θ) to Kisliuk-like dynamics at about the desorption temperature of iso-butane bi-layers (∼110 K). Thus, the adsorption dynamics are precursor-mediated. The enhanced (gas-surface) mass-match, caused by forming a second layer of the alkane, leads to adsorbate-assisted adsorption. A direct fitting procedure of the TDS data yields a pre-exponential factor of 2.5 × 10¹³/s and a coverage dependent heat of adsorption of E_d(Θ) = 39 − 6 ∗ Θ + 2.5 ∗ exp(−Θ/0.07) kJ/mol.     

Electron stimulated desorption of cesium atoms from germanium-covered tungsten

The electron stimulated desorption (ESD) yield and energy distributions for Cs atoms from cesium layers adsorbed on germanium-covered tungsten have been measured for different Ge film thicknesses, 0.25-4.75 ML (monolayer), as a function of electron energy and cesium coverage Θ. The measurements have been carried out using a time-of-flight method and surface ionization detector. In the majority of measurements Cs is adsorbed at 300 K. The appearance threshold for Cs atoms is about 30 eV, which correlates well with the Ge 3d ionization energy. As the electron energy increases the Cs atom ESD yield passes through a wide maximum at an electron energy of about 120 eV. In the Ge film thickness range from 0.5 to 2 ML, resonant Cs atom yield peaks are observed at electron energies of 50 and 80 eV that can be associated with W 5p and W 5s level excitations. As the cesium coverage increases the Cs atom yield passes through a smooth maximum at 1 ML coverage. The Cs atom ESD energy distributions are bell-shaped; they shift toward higher energies with increasing cesium coverage for thin germanium films and shift toward lower energies with increasing cesium coverage for thick germanium films. The energy distributions for ESD of Cs from a 1 ML Ge film exhibit a strong temperature dependence; at T = 160 K they consist of two bell-shaped curves: a narrow peak with a maximum at a kinetic energy of 0.35 eV and a wider peak with a maximum at a kinetic energy of 0.5 eV. The former is associated with W level excitations and the latter with a Ge 3d level excitation. These results can be interpreted in terms of the Auger stimulated desorption model.     

Isothermal adsorption kinetics on heterogeneous surfaces

Adsorption kinetics on energetically heterogeneous surfaces under isothermal conditions is analyzed using the uniform energy distribution model. Considering the quasi-equilibrium of surface diffusion between the adsorption sites with different energy, the kinetic equations dΘ/dt=(k_ap−A_dK_diff)(1−Θ) for first-order adsorption and dΘ/dt=k_ap(1−Θ)²−A_dK_diffΘ(1−Θ) for dissociative adsorption are obtained, where K_diff is a coefficient describing the surface diffusion equilibrium, which depends on the coverage and the energy distribution. Under isochoric conditions with p decreasing due to adsorption, surface diffusion accelerates the rate towards equilibrium significantly, as observed in static calorimetric adsorption experiments. An approximate solution in Lagergren form is derived for this condition.     

STM/STS characterization of platinum silicide nanostructures grown on a Pt(1 1 1) surface

Formation of the platinum silicides nanostructures and their electronic properties have been studied using scanning tunneling microscopy and scanning tunneling spectroscopy. The investigated structures have been grown by solid state epitaxy upon deposition of the Si atoms (coverage about 0.2 ML) and sequential annealing at temperature range 600-1170 K. The formation of the Pt₂Si and PtSi islands was investigated until the Si atoms embedded into the Pt substrate at the 1170 K. The images of the silicides structures and Pt substrates with atomic resolution have been recorded. The evolution of the spectroscopic curves both for substrates and nanostructures, corresponding to the structural and sizes changes, have been shown.     

Ruthenium adsorption and diffusion on the GaN(0 0 0 1) surface

We report first principles calculations to analyze the ruthenium adsorption and diffusion on GaN(0 0 0 1) surface in a 2×2geometry. The calculations were performed using the generalized gradient approximation (GGA) with ultrasoft pseudopotential within the density functional theory (DFT). The surface is modeled using the repeated slabs approach. To study the most favorable ruthenium adsorption model we considered T₁, T₄ and H₃ special sites. We find that the most energetically favorable structure corresponds to the Ru- T₄ model or the ruthenium adatom located at the T₄ site, while the ruthenium adsorption on top of a gallium atom (T₁ position) is totally unfavorable. The ruthenium diffusion on surface shows an energy barrier of 0.612 eV. The resultant reconstruction of the ruthenium adsorption on GaN(0 0 0 1)- 2×2 surface presents a lateral relaxation of some hundredth of Å in the most stable site. The comparison of the density of states and band structure of the GaN(0 0 0 1) surface without ruthenium adatom and with ruthenium adatom is analyzed in detail.     

Enhanced field ionization of water adsorbed on a carbon monoxide-covered, platinum field emitter tip

The influence of carbon monoxide, adsorbed on a platinum field emitter tip, on field ionization of adsorbed water was examined. Ramped field desorption (RFD) measurements of water ionization were performed at 108 K for water layer thicknesses up to 80 ML on a clean or CO-saturated tip surface. In RFD the applied field is ramped linearly in time until water ionization is detected, giving the onset field of ionization. Water ionization yields hydrated hydroxide ions and protons; the hydroxide ions remain within the water layer on the tip, while the hydrated protons are emitted into vacuum. At a low water coverage of 1.5 ML, the CO adlayer substantially reduced the onset field of ionization (that is, facilitated ionization) of water by 40%, from a value of 0.43 V/Å for water on clean Pt to 0.26 V/Å for water on CO-covered Pt. The extent of the reduction gradually diminished with thicker coverages of water and was absent at coverages of 20 ML or greater. The characteristic decay length of the field enhancement was 4.7 ± 1 ML. The results were analyzed with the charge exchange model of ionization kinetics and changes in dipole moments of water adsorbed without and with CO. The analysis reveals that a change in water structure (dipole moment) caused by CO is an important contributor in field enhancement and that the dipole moment for hydrated hydroxide ion in an ice-like layer must be greater than that for bulk ice-like water. The significance of these results with respect to electrochemical oxidation of CO is discussed.     

CO adsorption on epitaxially grown Pt layers on Ru(0 0 0 1)

The adsorption of CO on epitaxially grown Pt films of variable thickness has been studied using infrared-absorption spectroscopy, scanning tunnelling microscopy and thermal desorption spectroscopy. Depending on the number of pseudomorphic Pt layers (N_Pt = 1-4) the internal and external CO stretching modes (ν_C-O and ν_Pt-CO, respectively) display characteristic frequency shifts due to the vanishing influence of the underlying Ru(0 0 0 1) substrate and Pt/Ru interface. For thicker layers (N_Pt ? 5) when this influence has become negligible, the compressive stress within the Pt film is gradually relieved, leading to a dislocation network. The structural heterogeneity during the ongoing relaxation process of the Pt film is reflected in the ν_C-O line shape; no line broadening is observed for either pseudomorphic or very thick films (N_Pt ? 15). For N_Pt ? 3 the adsorption of CO on Pt/Ru(0 0 0 1) films closely resembles CO on Pt(1 1 1), with residual deviations in line position and desorption temperatures gradually converging to zero.     

Decomposition of thin titanium deuteride films; thermal desorption kinetics studies combined with microstructure analysis

The thermal evolution of deuterium from thin titanium films, prepared under UHV conditions and deuterated in situ at room temperature, has been studied by means of thermal desorption mass spectrometry (TDMS) and a combination of scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). The observed Ti film thickness dependent morphology was found to play a crucial role in the titanium deuteride (TiD_y) film formation and its decomposition at elevated temperatures. TDMS heating induced decomposition of fine-grained thin Ti films, of 10-20 nm thickness, proceeds at low temperature (maximum peak temperature T_m about 500 K) and its kinetics is dominated by a low energy desorption (E_D = 0.61 eV) of deuterium from surface and subsurface areas of the Ti film. The origin of this process is discussed as an intermediate decomposition state towards recombinative desorption of molecular deuterium. The TiD_y bulk phase decomposition becomes dominant in the kinetics of deuterium evolution from thicker TiD_y films. The dominant TDMS peak at approx. T_m = 670 K, attributed to this process, is characterized by E_D = 1.49 eV.     

In situ scanning tunneling microscopy studies of bimetallic cluster growth: Pt-Rh on TiO2(1 1 0)

The growth of Pt on clusters on TiO₂(1 1 0) in the presence and absence of Rh was investigated by scanning tunneling microscopy (STM) for Pt deposited on top of 0.3 ML Rh clusters (Rh + Pt). In situ STM studies of Pt growth at room temperature show that bimetallic clusters are produced when Pt is directly incorporated into existing Rh clusters or when newly nucleated clusters of pure Pt coalesce with existing Rh clusters. Low energy ion scattering experiments demonstrate that Rh is still present at the surface of the clusters even after deposition of 2 ML of Pt, indicating that Rh atoms can diffuse to the cluster surface at room temperature. Rh clusters were found to seed the growth of Pt clusters at room temperature as well as 100 K and 450 K. Furthermore, clusters as large as 100 atoms were observed to be mobile on the surface at room temperature and 450 K, but not at 100 K. Pt deposition at 100 K exhibited more two-dimensional cluster growth and higher cluster densities compared to room temperature experiments due to the lower diffusion rate. Increased diffusion rates at 450 K resulted in more three-dimensional cluster growth and lower densities for pure Pt growth, but cluster densities for Pt + Rh growth were the same as at room temperature.     

Comparative study of H2 adsorption on W(1 0 0)-c(2 × 2)Cu and W(1 0 0): Surface alloying effects

The interactions of H and H₂ with W(1 0 0)-c(2 × 2)Cu and W(1 0 0) have been investigated through density functional theory (DFT) calculations to elucidate the effect of Cu atoms on the reactivity of the alloy. Cu atoms do not alter the attraction towards top-W sites felt by H₂ molecules approaching the W(1 0 0) surface but make dissociation more difficult due to the rise of late activation barriers. This is mainly due to the strong decrease in the stability of the atomic adsorbed state on bridge sites, the most favourable ones for H adsorption on W(1 0 0). Still, our results show unambiguously that H₂ dissociative adsorption on perfect terraces of the W(1 0 0)-c(2 × 2)Cu surface is a non-activated process which is consistent with the high sticking probability found in molecular beam experiments at low energies.