The barrier height inhomogeneity in Al/p-Si Schottky barrier diodes with native insulator layer

The current-voltage (I-V) characteristics of Al/p-Si Schottky barrier diodes (SBDs) with native insulator layer were measured in the temperature range of 150-375 K. The estimated zero-bias barrier height Φ_B0 and the ideality factor n assuming thermionic emission (TE) theory show strong temperature dependence. Evaluation of the forward I-V data reveals an increase of zero-bias barrier height Φ_B0 but decrease of ideality factor n with increase in temperature. The conventional Richardson plot exhibits non-linearity below 250 K with the linear portion corresponding to activation energy of 0.41 eV and Richardson constant (A^*) value of 1.3 × 10⁻⁴ A cm⁻² K⁻² is determined from intercept at the ordinate of this experimental plot, which is much lower than the known value of 32 A cm² K² for holes in p-type Si. Such behavior is attributed to Schottky barrier inhomogene ties by assuming a Gaussian distribution of barrier heights (BHs) due to barrier height inhomogeneities that prevail at interface. Also, Φ_B0 versus q/2kT plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and values of Φ_B0 = 1.055 eV and σ₀ = 0.13 V for the mean BH and zero-bias standard deviation have been obtained from this plot, respectively. Thus, the modified versus q/kT plot gives Φ_B0 and A^* as 1.050 eV and 40.08 A cm⁻² K⁻², respectively, without using the temperature coefficient of the barrier height. This value of the Richardson constant 40.03 A cm⁻² K⁻² is very close to the theoretical value of 32 A K⁻² cm⁻² for p-type Si. Hence, it has been concluded that the temperature dependence of the forward I-V characteristics of the Al/p-Si Schottky barrier diodes with native insulator layer can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights.     

Temperature dependence of current-voltage characteristics of Sn/p-Si Schottky contacts

The current-voltage (I-V) characteristics of Sn/p-Si Schottky barrier diode have been measured over a wide range of temperature (80-300 K) and interpreted on the basis of thermionic emission mechanism by merging the concept of barrier inhomogeneities through a Gaussian distribution function. The analysis has revealed an anomalous decrease of apparent barrier height Φ_b0, increase of ideality factor n, and nonlinearity of the activation energy plot at lower temperatures. A Φ_b0 versus 1/T plot has been drawn to obtain evidence of a Gaussian distribution of barrier heights, and values of 0.97 eV and 0.084 V for the mean barrier height and standard deviation σ₀ have been obtained, respectively, from this plot. A modified ln(I₀/T²)−(q²σ₀²/2k²T²) versus 1/T plot gives and Richardson constant A** as 0.95 eV and 15.6 A cm⁻² K⁻², respectively. It can be concluded that the temperature dependent I-V characteristics of the Sn/p-Si Schottky barrier diode can be successfully explained on the basis of a thermionic emission mechanism with Gaussian distribution of the barrier heights. We have also discussed whether or not the junction current has been connected with thermionic field-emission mechanism.     

Low-temperature measurements of magnetic susceptibility and specific heat of Eu2Ti2O7—An XY pyrochlore

Magnetic susceptibility obtained from magnetization measurement (for fields H=0.1 and 1.0 T) of polycrystalline Eu₂Ti₂O₇ shows two distinct features. Firstly, increases on cooling below 300 K and attains a temperature-independent constant value at 68 K (T_max). Secondly, shows an antiferromagnetic increase below 4.9±0.1 K. The former behavior is explained by crystal field (CF) theory. CF levels and wave functions of ground and excited states are determined accurately from analyses of and earlier reported Mössbauer and optical spectra. Analysis of vs. 1/T curve at low temperatures gives the classical nearest-neighbor exchange interaction J^cl=−0.76 K and a weak dipolar interaction D_nn=0.0056 K. C_P of polycrystalline sample of Eu₂Ti₂O₇ and Y₂Ti₂O₇ are measured between 1.8-35 and 1.8-120 K respectively and θ_D vs. T (K) curves are calculated. At 4 K, θ_D of Eu₂Ti₂O₇ shows a kink and dC_P/dT curve show a maximum. Optical results show energy exchange between Eu³⁺ ions at intrinsic and extrinsic (defect) sites via super-exchange interaction at low temperature which may account for the observed anomalous behavior of and C_P.     

Dependence of photoluminescence from a-Si nanoparticles on the annealing time and exciting wavelength

Thin films of SiO_x having thickness of 0.2 μm and oxygen content x=1.5 or 1.7 are prepared by thermal evaporation of SiO in vacuum. Then some samples are furnace annealed for various times (in the range ) at 770 and 970 K and some others are rapid thermal annealed at 970 K for 30 and 60 s. Photoluminescence (PL) measurements are carried out at room temperature using the 442 nm line of a He-Cd laser and the 488 nm of an Ar laser for excitation. The effect of the annealing conditions and wavelength of the exciting light on the shape of the PL from these films is explored. The deconvolution of the PL spectra measured with the 442 nm line from samples annealed at 770 K for reveals two distinct PL bands peaked at around 2.3 and 2.5 eV, which do not shift appreciably with increasing annealing time. In addition, at longer annealing times, a weak third band is resolved centred in the range 2.0-2.1 eV. It exists in the spectra of all samples annealed at 970 K being more prominent in the samples with x=1.5. The intensity of this band shows different dependences on the annealing time in the films with different initial composition. The results obtained are discussed in terms of radiative recombination via defect states in the SiO_x matrix (the 2.5 eV band) or at the a-Si-SiO_x interface (the 2.3 eV band). The band centred in the 2.0-2.1 eV range is related to recombination in amorphous silicon nanoparticles grown upon annealing.     

Magnetic properties of PrRh2Si2: A neutron diffraction study

The magnetic properties of polycrystalline PrRh₂Si₂ sample have been investigated by neutron diffraction measurements. Antiferromagnetic transition with an anomalously high ordering temperature (T_N∼68 K) is clearly observed in magnetic susceptibility, specific heat, electrical resistivity and neutron diffraction measurements. Neutron diffraction study shows that Pr³⁺ ions carry an ordered moment of 2.99(7)μ_B/Pr³⁺ and align along the crystallographic±c-directions for the ions located at the (0,0,0) and positions. The magnetoresistance at 2 K and 10 T is rather large (∼35%).     

Molecular dynamics of [(CH2OH)3CNH3]2SiF6 by phase transition of 178 K

We have investigated the molecular motions of TRIS⁺ ([(CH₂OH)₃CNH₃]⁺) and ions in the [(CH₂OH)₃CNH₃]₂SiF₆ crystal below room temperature from the measurements of the spin-lattice relaxation time T₁ and the NMR absorption line of ¹H and ¹⁹F nuclei, in order to elucidate the changes of the molecular motions by the phase transition of T_c=178 K. The narrowing of the ¹⁹F-NMR line was observed around T_c=178 K and the reorientation of the anion appears above T_c. Moreover, from the analysis of the temperature dependence of T₁, we have observed that the activation energy of the reorientational motion of ions changes from 0.168 eV (T>T_c) to 0.185 eV (T<T_c). Based on these results, we found that the reorientational motion of ions is closely related to the origin of the phase transition at T_c. In addition, from the measurement of the ¹H-NMR line, we also found that the reorientational motion of H₂ in the -CH₂OH group becomes active accompanied by the phase transition.     

Interface characterization and current conduction in HfO2-gated MOS capacitors

Metal-oxide-semiconductor (MOS) capacitors incorporating hafnium dioxide (HfO₂) dielectrics were fabricated and investigated. In this work, the electrical and interfacial properties were characterized based on capacitance-voltage (C-V) and current-voltage (I-V) measurements. Thereafter the current conduction mechanism, electron effective mass (m*), mean density of interface traps per unit area and energy (), energy distribution of interface traps density and near-interface oxide traps density (N_NIOT) were studied in details. The characterization reveals that the dominant conduction mechanism in the region of high temperature and high field is Schottky emission. The mean density of interface traps per unit area and energy is about 6.3 × 10¹² cm⁻² eV⁻¹ by using high-low frequency capacitance method. The maximum D_it is about 7.76 × 10¹² cm⁻² eV⁻¹ located at 0.27 eV above the valence band.     

Effect of surface preparation on the properties of Au/p-Cd1−xZnxTe

The effect of bromine methanol (BM) etching and NH₄F/H₂O₂ passivation on the Schottky barrier height between Au contact and semi-insulated (SI) p-Cd_1−xZn_xTe (x ≈ 0.09-0.18) was studied through current-voltage (I-V) and capacitance-voltage (C-V) measurements. Near-infrared (NIR) spectroscopy technique was utilized to determine the Zn concentration. X-ray photoelectron spectroscopy (XPS) for surface composition analysis showed that BM etched sample surface left a Te⁰-rich layer, however, which was oxidized to TeO₂ and the surface [Te]/([Cd] + [Zn]) ratio restored near-stoichiometry after NH₄F/H₂O₂ passivation. According to I-V measurement, barrier height was 0.80 ± 0.02-0.85 ± 0.02 eV for Au/p-Cd_1−xZn_xTe with BM etching, however, it increased to 0.89 ± 0.02-0.93 ± 0.02 eV with NH₄F/H₂O₂ passivation. Correspondingly, it was about 1.34 ± 0.02-1.43 ± 0.02 eV and 1.41 ± 0.02-1.51 ± 0.02 eV by C-V method.     

Experimental and theoretical studies on X-ray induced secondary electron yields in Ti and TiO2

Generation of X-ray induced secondary electrons in Ti and TiO₂ was studied from both experimental and theoretical approaches, using X-ray photoelectron spectroscopy (XPS) attached to a synchrotron radiation facility and Monte Carlo simulation, respectively.The experiment revealed that the yields of secondary electrons induced by X-rays (electrons/photon) at photon energies to 4950 and 5000 eV for Ti and TiO₂ are δ_Ti(4950 eV) = 0.002 and δ_Ti(5000 eV) = 0.014 while those for TiO₂ are δTiO₂(4950 eV)=0.003 and δTiO₂(5000 eV)=0.018.A novel approach to obtain the escape depth of secondary electrons has been proposed and applied to Ti and TiO₂. The approach agreed very well with the experimental data reported so far. The Monte Carlo simulation predicted; and while and .An experimental examination on the contribution of X-ray induced secondary electrons to photocatalysis in TiO₂ has also been proposed.     

Mott-type hopping conduction in the ordered and disordered phases of LiCoO2

The temperature dependence of dc resistance was observed in the range of for layered-rock-salt (hexagonal structure, ordered distribution between Li and Co) and modified-spinel (cubic, random distribution) phases of LiCoO₂. The results suggest Mott-type hopping conduction arising from the localized Co-3d electrons in the valence band. The densities of states (DOS) at the Fermi energy (E_F) estimated from the slope of the resistance curves were 2.0×10²⁰ and 5.5×10¹⁹ cm⁻³ eV⁻¹ for the ordered and disordered phases, respectively. The relatively low DOS at E_F in the disordered phase suggests that E_F approaches the edge of the valence band as a result of the narrowing of Co-t_2g bands due to the higher lattice symmetry in the disordered phase.     

Controlled Stark shifts in Er-doped crystalline and amorphous waveguides for quantum state storage

We present measurements of the linear Stark effect on the ⁴I_15/2 → ⁴I_13/2 transition in an Er³⁺-doped proton-exchanged LiNbO₃ crystalline waveguide and an Er³⁺-doped silicate fiber. The measurements were made using spectral hole burning techniques at temperatures below 4 K. We measured an effective Stark coefficient (Δμ_eχ)/(h) = 25 ± 1 kHz/V cm⁻¹ in the crystalline waveguide and  kHz/V cm⁻¹ in the silicate fiber. These results confirm the potential of erbium-doped waveguides for quantum state storage based on controlled reversible inhomogeneous broadening.     

Shell model calculations of the adsorption and diffusion of K, Cl, and KCl on KCl(0 0 1)

Equilibrium adsorption positions and diffusion pathways of the ions K⁺ and Cl⁻ as well as of the molecule KCl on the terrace of the (0 0 1) surface of KCl were determined by shell model calculations allowing relaxations of the crystal lattice in the vicinity of the adsorbed species. For the ions each one adsorption position was found, in which the ions are located above the hollow site at the center of a slightly distorted square formed by two cations and two anions of the uppermost surface layer of the KCl crystal. Adsorption energies of −1.52 eV for K⁺ and −1.61 eV for Cl⁻ were calculated. Jumps of the ions occur from these positions to adjacent hollow positions in the ±[1 0 0] and ±[0 1 0] directions with a jump distance of a₀/2. The activation energies for the jumps result as 0.142 for K⁺ and 0.152 eV for Cl⁻ and the mean diffusion lengths as and . For the KCl molecule four distinct adsorption minima with energies between −0.932 and −0.825 eV were found. Because of the smaller lattice relaxation caused by the molecule the adsorption energies are considerably lower than for the single ions. In the position with the largest adsorption energy the ions of the admolecule are again placed above adjacent hollow sites. In two more adsorption positions only one ion is at the hollow site and the other one in a top position above an oppositely charged ion of the surface. In the fourth position with the smallest adsorption energy both ions are in top positions. Jumps between the different adsorption positions proceed by rotations of the molecule, in which one of its ions remains essentially attached to a local minimum position. The diffusion and desorption of a KCl molecule was studied by a Monte Carlo method, resulting in a mean diffusion length x_s (nm) = 0.39 exp[0.84 (eV)/2kT], which agrees rather well with an experimental value of . Values for the mean stay time as well as for the surface diffusion coefficient are derived.     

Temperature and pressure effects on the spin state of ferric ions in the [Fe(sal2-trien)][Ni(dmit)2] spin crossover complex

Thermal and pressure effects have been investigated on the [Fe(sal₂-trien)][Ni(dmit)₂] spin crossover complex by means of Mössbauer spectroscopic, calorimetric, X-ray diffraction and magnetic susceptibility measurements. The complex displays a complete thermal spin transition between the and spin states of Fe^III near 245 K with a hysteresis loop of ca. 30 K. This transition is characterised by a change of the enthalpy, ΔH_HL=7 kJ/mol, entropy, ΔS_HL=29 J/Kmol, and the unit cell volume, ΔV_HL=15.4 Å³. Under hydrostatic pressures up to 5.7 kbar the thermal transition shifts to higher temperatures by ca. 16 K/kbar. Interestingly, at a low applied pressure of 500 bar the hysteresis loop becomes wider (ca. 61 K) and the transition is blocked at ∼50% upon cooling, indicating a possible (irreversible) structural phase transition under pressure.     

Spectroscopic ellipsometry study of the dielectric response of Au-In and Ag-Sn thin-film couples

Optical properties and phase composition of In-Au and Sn-Ag ultra-thin films grown by sequential evaporating and co-depositing of metals in a vacuum were investigated combining X-ray diffraction and spectroscopic ellipsometry methods. The atomic concentration ratios of bilayer and co-deposited samples were the same, i.e. In(Sn):Au(Ag) = 1:2. The XRD patterns indicated creation of AuIn, AuIn₂, Au₃In₂, Au₉In₄ and Ag₃Sn intermetallic compounds at room temperature. The effective complex dielectric functions of the composite layers, , were determined from ellipsometric quantities Ψ and Δ measured in a photon energy range of 0.6-6.5 eV. The free-carrier parameters (unscreened plasma frequency and free-carrier damping) and optical resistivity were evaluated using a semiclassical Drude-Lorentz model of the effective dielectric function. There was noticed a distinct influence of phase composition and surface morphology on the optical constants and conductivity of the samples: ρ_op changed from approximately 15 μΩ cm to 37 μΩ cm for Ag-Sn structures, composed of β-Sn and Ag₃Sn phases, and from 21 μΩ cm to 83 μΩ cm for Au-In multiphase system. Lower resistivity demonstrated diffusive layers formed after deposition of an In(Sn) thin film on the noble metal underlayer.     

First-principles study on the electronic structures and absorption spectra for the PbWO4 crystal with lead vacancy

The electronic structures and absorption spectra for the perfect PbWO₄ (PWO) crystal and the crystal containing lead vacancy have been calculated using density functional theory code CASTEP with the lattice structure optimized. The calculated absorption spectra of the PWO crystal containing exhibit seven absorption bands peaking at 1.72 eV (720 nm), 2.16 eV (570 nm), 2.81 eV (440 nm), 3.01 eV (410 nm), 3.36 eV (365 nm), 3.70 eV (335 nm) and 4.0 eV (310 nm), which are very close to the experimental values. It predicts that the 330, 360, 420, 500-750 nm absorption bands are related to the existence of in the PWO crystal.