A calibrated atomic force microscope using an orthogonal scanner and a calibrated laser interferometer

A compact and two-dimensional atomic force microscope (AFM) using an orthogonal sample scanner, a calibrated homodyne laser interferometer and a commercial AFM head was developed for use in the nano-metrology field. The x and y position of the sample with respect to the tip are acquired by using the laser interferometer in the open-loop state, when each z data point of the AFM head is taken. The sample scanner, which has a motion amplifying mechanism was designed to move a sample up to 100 μm × 100 μm in orthogonal way, which means less crosstalk between axes. Moreover, the rotational errors between axes are measured to ensure the accuracy of the calibrated AFM within the full scanning range. The conventional homodyne laser interferometer was used to measure the x and y displacements of the sample and compensated via an X-ray interferometer to reduce the nonlinearity of the optical interferometer. The repeatability of the calibrated AFM was measured to sub-nanometers within a few hundred nanometers scanning range.     

High power room-temperature design of terahertz quantum cascade laser based on difference frequency generation

Terahertz (THz) quantum cascade lasers (QCLs) are key elements for high-power terahertz beam generation for integrated applications. In this study, we design a highly nonlinear THz-QCL active region in order to increase the output power of the device especially at lower THz frequencies based on difference frequency generation (DFG) process. It has been shown that the output power increases for a 3.2 THz structure up to 1.2 μW at room temperature in comparison with the reported power of P = 0.3 μW in [1]. The mid-IR wavelengths associated with this laser are λ₁ = 12.12 μm and λ₂ = 13.93 μm, which are mixed in a medium with high second-order nonlinearity. A similar approach has been used to design an active region with THz frequency of 1.8 THz. The output power of this structure reaches to 1 μW at room temperature where the mid-IR wavelengths are λ₁ = 12.05 μm, λ₂ = 12.99 μm.     

Simultaneous dual-wavelength Q-switched Nd:YAG laser operating at 1.06 μm and 946 nm

Considering the reabsorption loss of the quasi-three level system and the unsaturable loss of the saturable absorber, we obtained the operating condition of a diode-pumped simultaneous dual-wavelength Q-switched Nd:YAG laser operating at 1.06 μm and 946 nm. The dual-wavelength pulsed laser was realized successfully through adaptive coating design of the cavity mirrors. As much as 1.6 W total average output power of the dual-wavelength at 1.06 μm and 946 nm was achieved at the incident pump power of 14.2 W with an optical conversion efficiency of 11.3%.     

Laser synthesis of nitrides on the surface of refractory metals immersed in liquid nitrogen

In this paper we describe an approach for the formation of composite layers on the surface of refractory metals. We show that laser radiation on refractory metals (Ti, V, Zr, Mo, Hf, Ta, and W) immersed in liquid nitrogen can provide a chemical synthesis of nitride phases on the surface of metals. The metals were subjected to pulsed laser radiation with a wavelength of 1.06 μm. The power density ranged from 10⁴ to 10⁹ W cm⁻². The synthesis of nitrides began with the formation of Me_xN_y (x > y) phases with low contents of nitrogen. When the melting point was reached at the metal surface, the quantity of MeN phases increased sharply. Study of the melting zone showed that it contained a non-uniform distribution of nitride phases. The quantity of nitrides was a maximum on the surface and decreased with the increase of the depth of melting zone. Due to the high-cooling rates, titanium nitride crystallized in the form of columns. Maximum microhardness in the Ti surface layer was up to 20,000 MPa.     

Epitaxial growth of titanium oxycarbide on MgO (0 0 1) substrates by pulsed laser deposition

Epitaxial TiC_xO_y thin films were grown on MgO (0 0 1) substrates by using pulsed laser deposition method. High-resolution X-ray diffraction and transmission electron microscopy were used to examine crystallinity and microstructure of epitaxial TiC_xO_y film on MgO. The chemical composition of the film is determined to be x ∼ 0.47 and y ∼ 0.69 by X-ray photoelectron spectroscopy. Atomic force microscopy revealed that the surface of TiC_xO_y film is very smooth with roughness of 0.18 nm. The resistivity of the TiC_xO_y film measured by four-point-probe method was about 137 μ Ω cm.     

Q-switched Nd lasers pumped directly into the F3/2 emitting level

The influence of the direct pumping into the ⁴F_3/2 emitting level on the output characteristics of continuous-wave (CW) pumped, passively or actively (acoustooptic, AO) Q-switched Nd lasers is discussed. In case of passive Q-switching by Cr⁴⁺:YAG saturable absorber (SA) crystal, the change of pumping wavelength from 0.81 μm into the highly-absorbing ⁴F_5/2 level to 0.88 μm into the ⁴F_3/2 level of Nd does not modify the energy of the Q-switch pulse, but increases the pulse repetition rate and the laser average power for the same absorbed pump power. This is demonstrated with 0.81 and 0.88 μm CW laser diode-pumped Nd:YAG and Nd-vanadate lasers with average output power in the watt-level range at 1.06 μm. The effect is explained by the control of passive Q-switching by the intracavity photon flux that is influenced by the pump wavelength and by the initial transmission of the SA crystal. On the other hand, it is discussed and experimentally proved that due to the possibility to control externally the frequency of switching, in case of the AO Q-switched Nd laser the change of the pump wavelength from 0.81 to 0.88 μm increases the pulse energy for a fixed frequency, leading to a corresponding increase of the average laser power.     

Tunable terahertz generation from one CO2 laser in a GaSe crystal

Coherent terahertz pulses have been generated at a range of 236.3-1104.5 μm (0.27-1.3 THz) by one CO₂ laser with dual-wavelength output based on collinearly phase-matched different frequency generation (DFG) in a GaSe crystal. This source has the advantages of compact and simplicity for tuning. The output power of the THz pulse and phase-matching conditions were investigated. The maximum single pulse energy of 11 nJ was generated at a frequency of 1.23 THz (243.6 μm), corresponding to a peak output power 182 mW.     

Novel device to measure critical point "Onset" of capillary wave and interpretation of Faraday instability wave by numerical analysis

A capillary wave was created on a surface by vibrating from the bottom of a container. When the amplitude of the container vibration approached the critical point, called the onset state, the surface broke up and bursted into very small drops on the air. The numerical analysis was used to determine the amplitude of the onset. The onset point was found to be 0.349 μm at f = 500 kHz. The critical amplitude h_cr was determined by using a multi-Fourier horn nozzle (MFHN) device. The onset point was measured to be 0.37 μm using a laser Doppler vibrometer (LDV) with the MFHN at f = 486 kHz. These drops indicate that particle size distributions of 10.8 μm and 7.0 μm were produced by the MFHN at f = 289 kHz and f = 486 kHz, respectively. These results agreed with those obtained using Kelvin’s equation, which predicted D = 0.34λ.     

Widely phase-matched tunable difference-frequency generation in periodically poled LiNbO3 crystal

We report on the development of a laser source in the mid-infrared spectral region based on difference-frequency generation (DFG) in a periodically poled LiNbO₃ (PPLN) crystal. Continuously tunable coherent radiation from 2.75 to 4.78 μm was produced by optical parametric interaction between a diode-pumped monolithic continuous-wave (CW) Nd:YAG laser operating at 1.064 μm and a CW Ti:Sapphire laser tunable from 767 to 871 nm. Temperature-dependent quasi-phase-matched DFG wavelength acceptance bandwidth was studied and characterized. An empiric formula is given to estimate the phase-matched wavelength acceptance bandwidth as a function of the crystal temperature at Λ = 22.5 μm. A large frequency scan of 128 cm⁻¹ (about 78 cm⁻¹ above 1 μW) near 4.2 μm was achieved. The whole absorption spectrum of the P and R branches of the ν₃ band of atmospheric carbon dioxide has been recorded with a single phase-matched frequency scan.     

Use of plasma polymerisation process for fabrication of bio-MEMS for micro-fluidic devices

Using a plasma polymerisation process with optical lithography, wet and dry etching techniques we have fabricated an organic micro-fluidic device (OMDF) on silicon/glass substrate. An asymmetric electrode array used in micro-fluidic device (MFD) with small electrode (4 μm wide) separated from the large electrode (20 μm wide) by 20 μm and 6 μm gaps in both sides respectively. In this study we have found that plasma polymerisation process is not only important for changing the surface chemical and physical properties but also has advantage in bonding of these micro devices at low temperature (∼100 °C) due to low T_g of polymeric material. The fluidic velocity measurement shows a maximum of about 450 μm/s in a 150 μm channel width of organic micro-fluidic devices after plasma surface modification.     

Design of a wavelength demultiplexer based on a parabolically tapered multimode interference coupler

A compact wavelength demultiplexer is designed for the operation at 1.30 and 1.55 μm wavelengths using the three-dimensional semi-vectorial beam propagation method. The parabolically tapered multimode interference (MMI) coupler based on the deep-etched SiO₂/SiON rib waveguide is introduced into the present demultiplexer for reducing the length. The numerical results show that a MMI section of 330.0 μm in length, which is only 76% length of a straight MMI coupler, is achieved with the contrasts of 42.3 and 39.2 dB in quasi-TE mode, and 38.4 and 37.8 dB in quasi-TM mode at wavelengths 1.30 and 1.55 μm, respectively and the insertion losses below 0.2 dB. The modified finite difference scheme is applied to approximate the resulting equations along the transverse directions, in which the discontinuities of the derivatives of magnetic field components H_y and H_x along the vertical and horizontal interfaces, respectively, are involved.     

High-speed deposition of RE123 film with large current capacity by hot-wall type PLD system

We have studied a hot-wall heating system to produce GdBa₂Cu₃O_y (GdBCO) films with large critical currents (I_c) at a high production rate by a pulsed-laser-deposition (PLD) method. GdBCO films fabricated at a production rate of 30 m/h under the optimized conditions, especially a distance of 95 mm between the target and the substrate (T–S), exhibited high critical current densities (J_c) of about 3 MA/cm² and I_c over 300 A at a thickness of 1–2 μm. Furthermore, long GdBCO tapes prepared by repeated depositions at each tape-passing speed of 80 m/h showed uniform I_c distribution along the longitudinal direction, because the hot-wall system enabled to stabilize temperature within a few degrees at 800 °C. A 170 m long tape with I_c over 600 A was successfully fabricated at a production rate of 16 m/h using a laser power of 360 W.     

Efficient Nd:YAG pumped mid-IR laser based on cascaded KTP and ZGP optical parametric oscillators and a ZGP parametric amplifier

Efficient conversion into the mid-IR of a low pulse-energy (2.5 mJ) Nd:YAG laser is achieved by cascaded KTiOPO₄ (KTP) and ZnGeP₂ (ZGP) optical parametric oscillators followed by a ZGP optical parametric amplifier. The first stage 2.13 μm degenerate KTP OPO uses four KTP crystals in a walk-off compensated geometry and an elliptical pump beam focal geometry to produce up to 2.2 W from 6.3 W incident. The 2.13 μm e-ray pumps a Type-I ZGP OPO, which produces 0.5 W of light in the 3.8-4.8 μm spectral region that in turn is amplified by a 2.13 μm o-ray pumped optical parametric amplifier generating 0.84 W with an M² of <2.     

Field electron emission from HfNxOy thin films deposited by direct current sputtering

HfN_xO_y thin films were deposited on Si substrates by direct current sputtering at room temperature. The samples were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). SEM indicates that the film is composed of nanoparticles. AFM indicates that there are no sharp protrusions on the surface of the film. XRD pattern shows that the films are amorphous. The field electron emission properties of the film were also characterized. The turn-on electric field is about 14 V/μm at the current density of 10 μA/cm², and at the electric field of 24 V/μm, the current density is up to 1 mA/cm². The field electron emission mechanism of the HfN_xO_y thin film is also discussed.     

Circular and rectangular via holes formed in SiC via using ArF based UV excimer laser

Circular via holes with diameters of 10, 25, 50 and 70 μm and rectangular via holes with dimensions of 10 μm × 100 μm, 20 μm × 100 μm and 30 μm × 100 μm and drilled depths between 105 and 110 μm were formed in 300 μm thick bulk 4H-SiC substrates by Ar/F₂ based UV laser drilling (λ = 193 nm) with a pulse width of ∼30 ns and a pulse frequency of 100 Hz. The drilling rate was linearly proportional to the fluence of the laser, however, the rate decreased for the larger via holes. The laser drilling produces much higher etch rates (229-870 μm/min) than conventional dry etching (0.2-1.3 μm/min) and the via entry can be tapered to facilitate subsequent metallization.     

Preparation and multi-properties of insulated single-phase BiFeO3 ceramics

Six types of BiFeO₃ ceramic samples, with subtle differences in synthesis conditions, were prepared. The comparison of their phases, electrical resistivity, and porosity revealed that the use of Bi₂O₃ and Fe₂O₃ powders of <1 μm size and a rapid liquid-phase sintering process of 855 °C for 5 min at 100 °C/s is beneficial to synthesize poreless single-phase BiFeO₃ samples with high electrical resistivity of ∼5×10¹² Ω cm. Deoxygenated Bi_xFe_yO_{1.5x+1.5y−δ} (x≠y, δ≥0) impurities were identified and found to be the main cause of low electrical resistivity and high porosity in the multi-phase samples. Large saturation polarization of 16.6 μC/cm² and low leakage current density of 30 mA/m², both at a high electric field of 145 kV/cm, were measured in the optimized single-phase samples at room temperature besides a large piezoelectric d₃₃ coefficient of 27 pC/N and an obvious canted antiferromagnetic behavior.     

The far-infrared and microwave spectra of the CH radical in the v = 1 level of the XΠ state

Transitions between the spin-rotational levels of the ¹²CH radical in the v = 1 level of the X²Π state have been studied by the technique of laser magnetic resonance at far-infrared wavelengths. The data have been combined with a measurement of lambda-doubling transition frequencies at 7 GHz to determine an improved set of molecular parameters for CH in the v = 1 level. The parameters provide information on the effects of vibrational excitation on the structural properties of CH. Accurate predictions of the transition frequencies between the low-lying levels of the radical in the absence of a magnetic field have also been made.Small inconsistencies in the least-squares fit of the laser magnetic resonance data prompted re-measurement of three far-infrared laser frequencies, the 122.5 μm line of CH₂F₂ pumped by 9R(22), the 122.5 μm line of CH₂F₂ pumped by 9P(8) and the 554.4 μm line of CH₂CF₂ pumped by 10P(14). The new measurements differ by as much as 3.8 MHz from those made previously and are more accurate; they also remove the inconsistencies in the fit. The re-measured frequencies of the two 122.5 μm lines are identical within experimental error which suggests that the far-infrared lasing transition is the same, namely the ^rR₂₃(32) transition in the v₉=1 level of CH₂F₂.     

Temperature phase-matching properties of mixed chalcopyrite AgGa1−xInxS2 crystal

AgGa_1−xIn_xS₂ with x = 0.14 ± 0.01 was found to be 90° phase-matchable for the second harmonic generation (SHG) of CO₂ laser radiation at 10.591 μm at 203 °C. In addition, temperature-tuned 90° phase-matched difference frequency generation (DFG) at 4.02 μm was demonstrated by mixing the idler output of a Nd:YAG third harmonic pumped β-BBO optical parametric oscillator and its fundamental source at 1.0642 μm. The Sellmeier and thermo-optic dispersion formulas that reproduce well these experimental data are presented.     

Comparison of mechanisms and effects of Nd:YAG and CO2 laser cleaning of titanium alloys

The paper compares laser cleaning trials performed using a Q-switched Nd:YAG laser, λ = 1.064 μm and a continuous wave (CW) CO₂ laser, λ = 10.6 μm, applied to aerospace-grade, contaminated titanium alloys. The mechanisms for cleaning using each laser system are modelled to determine the mode and extent of contaminant removal. The model results are then compared with the surface chemistry and micro-structural results from the cleaning trials performed. The results show the dominant cleaning process for Nd:YAG cleaning to be by evaporation of the contaminant via conduction through surface heating, while for CO₂ laser cleaning the small fraction of the beam coupling directly with the contaminant is sufficient for direct heating and selective evaporation. The results for experimental cleaning, electron beam (EB) welding and diffusion bonding align well with the model, particularly when secondary reactions are taken into account.     

Line patterning with large refractive index changes in the deep inside of glass by nanosecond pulsed YAG laser irradiation

Nanosecond (∼100 ns) pulsed (10 Hz) Nd:YAG laser operating at the wavelength (λ) of 1064 nm with pulse energies of 0.16-1.24 mJ/cm² has irradiated 10Sm₂O₃·40BaO·50B₂O₃ glass. It is demonstrated for the first time that the structural modification resulting the large decease (∼3.5%) in the refractive index is induced by the irradiation of YAG laser with λ=1064 nm. The lines with refractive index changes are written in the deep inside of 100-1000 μm depths by scanning laser. The line width is 1-13 μm, depending on laser pulse energy and focused beam position. It is proposed that the samarium atom heat processing is a novel technique for inducing structural modification (refractive index change) in the deep interior of glass.