Photoluminescence properties of Sr(Y, Gd)2O4:Euunder VUV excitation

Vacuum ultraviolet (VUV) excitation and photoluminescence (PL) properties of Sr(Y, Gd)₂O₄ doped with Eu³⁺ were studied. The excitation spectra of SrY_1.9Eu_0.1O₄ and SrY_1.0Gd_0.9Eu_0.1O₄ had absorption in the VUV region with the absorption band edge at 149 nm, while the absorption of SrGd_1.9Eu_0.1O₄ in the VUV region was weak, which could be due to the narrow host band gap and no efficient energy transfer occurred in the VUV region. The PL spectra of all samples exhibited the characteristic emission of Eu³⁺ with the red ⁵D₀-⁷F₂ transition (611 nm) being the most prominent group.     

Luminescent and aging characteristics of blue emitting (Ca1−x,Mgx)Al2Si2O8:Eu phosphor for PDPs application

We have evaluated thermal stability and aging property of a blue color-emitting phosphor, CaAl₂Si₂O₈:Eu²⁺ (CAS:Eu²⁺), synthesized by conventional solid-state reaction method. When both CAS:Eu²⁺ and BaMgAl₁₀O₁₉:Eu²⁺ (BAM) were baked in air at 500 °C for 20 min, the decrease of photoluminescence (PL) intensity of CAS:Eu²⁺ was lower than that of BAM. The aging property of CAS:Eu²⁺ was also better than that of BAM. Due to its rigid structure and unlimited framework of silicon-oxygen and aluminum-oxygen around Eu²⁺ ions, Eu²⁺ ions were protected from outer oxidizing atmosphere and plasma discharge. After analysis of aging property and thermal stability, the differences of these thermal stability and aging property of CAS:Eu²⁺ from those of BAM were ascribed to its crystal structure which plays a role of a shield for Eu²⁺ ions against oxidation atmosphere and Xe ion bombardment.     

Photoluminescence of Y2O3:Eu thin film phosphors by sol-gel deposition and rapid thermal annealing

Y₂O₃:Eu³⁺ phosphor films have been developed by using the sol-gel process. Comprehensive characterization methods such as Photoluminescent (PL) spectroscopy, X-ray diffraction (XRD) and Fourier Transform Infrared (FTIR) spectroscopy were used to characterize the Y₂O₃:Eu³⁺ phosphor films. In this experiment, the XRD profiles show that the Y₂O₃:Eu³⁺ phosphor films crystallization temperature and optimum annealing temperature occur at about 650 and 750 °C, respectively. The optimum dopant concentration is 12 mol% Eu³⁺ and the critical transfer distance (R_c) among Eu³⁺ ions is calculated to be about 0.84 nm. Vacuum environment is more efficient than oxygen and nitrogen to eliminate the OH content and hence yields higher luminescent phosphor films. The PL emission intensity of Y₂O₃:Eu³⁺ phosphor films is also dependent on the annealing time. It was found that the H₂O impurities were effectively eliminated after annealing time of 25 s at 750 °C in vacuum environment. From the experiment results, the schematic energy band diagram of Y₂O₃:Eu³⁺ phosphor films is constructed.     

Effective energy transfer between Ceand Eu in CaAl2Si2O8 host under vacuum ultraviolet illumination

We presented the energy transfer from Ce³⁺ to Eu²⁺ in CaAl₂Si₂O₈ host. The Ce³⁺-doped CaAl₂Si₂O₈ phosphor had a strong emission band at 378 nm under the vacuum ultraviolet (VUV) light. This emission spectrum of Ce³⁺ well overlapped with the excitation spectrum of Eu²⁺ under the UV illumination. As a result, the energy transfer from Ce³⁺ to Eu²⁺ in CaAl₂Si₂O₈ matrix was observed under VUV excitation, which resulted in a significant enhancement of the emission peak intensity at 446 nm. More details about the luminescent properties were presented.     

Degradation mechanisms of the blue-emitting phosphor BaMgAl10O17:Eu under baking and VUV-irradiating treatments

The luminescent properties of an Eu²⁺-activated hexagonal aluminate, BaMgAl₁₀O₁₇ (BAM), were studied under 147- and 254-nm excitations. The BAM samples were thermally treated by baking and then irradiated in vacuum ultraviolet (VUV) rays. The results show that the emission efficiency of Eu²⁺ in BAM under 147-nm excitation degraded seriously after baking or VUV-irradiating treatments, while no significant degradation was observed under 254-nm excitation. The degree of degradation depended on the excitation wavelength, and the absorption edge of the BAM host was suggested to be close to 175 nm (7.2 eV). The differences between the thermal-induced and the VUV-irradiation-induced degradations, and their mechanisms are discussed for the color plasma display applications.     

New red phosphors BaZr(BO3)2 and SrAl2B2O7 doped with Eu for PDP applications

Vacuum ultraviolet (VUV) excitation and photoluminescence (PL) characteristics of Eu³⁺ ion doped borate phosphors; BaZr(BO₃)₂:Eu³⁺ and SrAl₂B₂O₇:Eu³⁺ are studied. The excitation spectra show strong absorption in the VUV region with the absorption band edge at ca. 200 nm for BaZr(BO₃)₂:Eu³⁺ and 183 nm for SrAl₂B₂O₇:Eu³⁺, respectively, which ensures the efficient absorption of the Xe plasma emission lines. In BaZr(BO₃)₂:Eu³⁺, the charge transfer band of Eu³⁺ does not appear strongly in the excitation spectrum, which can be enhanced by co-doping Al³⁺ ion into the BaZr(BO₃)₂ lattices. The luminescence intensity of BaZr(BO₃)₂:Eu³⁺ is also increased by Al³⁺ incorporation into the lattices. The PL spectra show the strongest emission at 615 nm corresponding to the electric dipole ⁵D₀→⁷F₂ transition of Eu³⁺ in both BaZr(BO₃)₂ and SrAl₂B₂O₇, similar to that in YAl₃(BO₃)₄, which results in a good color purity for display applications.     

Eu/Tb ions co-doped white light luminescence Y2O3 phosphors

Y₂O₃:Eu³⁺, Tb³⁺ phosphors with white emission are prepared with different doping concentration of Eu³⁺ and Tb³⁺ ions and synthesizing temperatures from 750 to 950 °C by the co-precipitation method. The resulted phosphors were characterized by X-ray diffraction (XRD) and photoluminescence (PL) spectroscopy. The results of XRD indicate that the crystallinity of the synthesized samples increases with enhancing the firing temperature. The photoluminescence spectra indicate the Eu³⁺ and Tb³⁺ co-doped Y₂O₃ phosphors show five main emission peaks: three at 590, 611 and 629 nm originate from Eu³⁺ and two at 481 and 541 nm originate from Tb³⁺, under excitation of 250-320 nm irradition. The white light luminescence color could be changed by varying the excitation wavelength. Different concentrations of Eu³⁺ and Tb³⁺ ions were induced into the Y₂O₃ lattice and the energy transfer from Tb³⁺→Eu³⁺ ions in these phosphors was found. The Commission International de l’Eclairage (CIE) chromaticity shows that the Y₂O₃:Eu³⁺, Tb³⁺ phosphors can obtain an intense white emission.     

A study on the luminescence properties of CaAl2B2O7:Eu phosphor

The blue-emitting CaAl₂B₂O₇:Eu²⁺ phosphor was prepared at 800 °C by a modified solid-state reaction. The results of X-ray powder diffraction (XRD) analysis confirmed the formation of CaAl₂B₂O₇:Eu²⁺. Photoluminescence (PL) spectroscopy showed that the phosphor could be excited efficiently by UV-vis light from 250 to 410 nm, and exhibit blue emission (460 nm). The emission intensity of CaAl₂B₂O₇:Eu²⁺ phosphor varies with the increase of Eu²⁺concentration. The mechanism of resonance-type energy transfer from Eu²⁺ to Eu²⁺ was established to be electric multipole-multipole interaction. TEM images showed that the grain size of CaAl₂B₂O₇:Eu²⁺ is about 45 nm, which is in full agreement with the theoretical calculation data from the XRD patterns.     

Surface characterization and luminescent properties of SrAl2O4:Eu,Dy nano thin films

SrAl₂O₄:Eu²⁺, Dy³⁺ thin films were grown on Si (1 0 0) substrates in different atmospheres using the pulsed laser deposition (PLD) technique. The effects of vacuum, oxygen (O₂) and argon (Ar) deposition atmospheres on the structural, morphological and photoluminescence (PL) properties of the films were investigated. The films were ablated using a 248 nm KrF excimer laser. Improved PL intensities were obtained from the unannealed films prepared in Ar and O₂ atmospheres compared to those prepared in vacuum. A stable green emission peak at 520 nm, attributed to 4f⁶5d¹→4f⁷ Eu²⁺ transitions was obtained. After annealing the films prepared in vacuum at 800 °C for 2 h, the intensity of the green emission (520 nm) of the thin film increased considerably. The amorphous thin film was crystalline after the annealing process. The diffusion of adventitious C into the nanostructured layers deposited in the Ar and O₂ atmospheres was most probably responsible for the quenching of the PL intensity after annealing.     

A novel blue magnesium strontium aluminate-based phosphor for PDP application

A novel blue light-emitting phosphor, Eu²⁺-doped magnesium strontium aluminate (MgSrAl₁₀O₁₇:Eu²⁺), for plasma display panel (PDP) application was developed. X-ray diffraction (XRD) patterns disclosed that the phosphor annealed at 1500 °C for 5 h was a pure MgSrAl₁₀O₁₇ phase. Field emission scanning electron microscopy (FE-SEM) images showed the particle size of the phosphor was less than 3 μm. The phosphor shows strong and broad blue emission under vacuum ultraviolet (VUV) light excitation. After baking at 400-600 °C and irradiation with VUV light for 300 h, the phosphor still keep excellent VUV luminescence properties exhibiting good stability against high temperature baking and VUV irradiation. The decay time was short as 1.09 μs and the quantum yield was high to 0.77±0.02. All the characteristics indicated that MgSrAl₁₀O₁₇:Eu²⁺ would be a promising blue phosphor for PDP application.     

The enhancement of luminescence in Co-doped cubic Eu2O3 using Li and Al ions

The co-doping of Li⁺ and Al³⁺ ions drastically enhances the luminescence of cubic Eu₂O₃. The integrated emission intensity of ⁵D₀→⁷F_J bands (J=1-4) at 580-710 nm increases by a factor of about 6.7 in the co-doped Eu₂O₃ compared to the un-doped Eu₂O₃. In order to confirm that the co-doped ions were actually incorporated into the host lattice, the structural characteristics were studied using Raman spectroscopy, XPS, XRD, photoluminescence lifetime, and an SEM. These analyses consistently indicate a certain structural evolution in their results with an increase in the co-doping concentration. Variations in the crystal structure, the crystal morphology, and the intensity variation of the Raman modes at 465 and 483 cm⁻¹ are presented as the evidences showing the incorporation of the co-doped ions into the host. The luminescence enhancement is discussed in terms of concentration quenching, reduction of defect sites, and the modification of the local symmetry of the Eu³⁺ ions, especially in the inversion symmetry sites.     

Synthesis and crystal structures and luminescent properties of divalent europium-doped Ba2ZnSi2O7 and BaZn2Si2O7

The monoclinic Ba₂ZnSi₂O₇:Eu²⁺ blue-green-emitting phosphor and the orthorhombic BaZn₂Si₂O₇:Eu²⁺ green-emitting phosphor were prepared by combustion-assisted synthesis method as the fluorescent materials for ultraviolet-light-emitting diodes (UV-LEDs) performed as a light source. The crystallinity and luminescence were investigated using X-ray diffraction (XRD) and photoluminescence (PL) spectroscopy. Pure monoclinic Ba₂ZnSi₂O₇ and orthorhombic BaZn₂Si₂O₇ crystallize completely at 1100 °C. The doped Eu²⁺ ions did not cause any significant change in the host structure. The emission spectra presented an emission position red shift of up to 16 nm from Ba₂ZnSi₂O₇:Eu²⁺ to BaZn₂Si₂O₇:Eu²⁺. The excitation spectra of Ba₂ZnSi₂O₇:Eu²⁺ and BaZn₂Si₂O₇:Eu²⁺ were broad-banding, extending from 260 to 465 nm, which match the emission of UV-LEDs.     

Improved photoluminescence of BaMgAl10O17 blue phosphor prepared by spray pyrolysis

BaMgAl₁₀O₁₇:Eu²⁺ (BAM) blue phosphor particles with improved photoluminescence (PL) intensity under vacuum ultraviolet (VUV) excitation were prepared by a spray pyrolysis process. In order to improve the PL intensity, Er³⁺ and Nd³⁺ ions were used as co-doping elements. The VUV characteristics of BAM:Eu²⁺, M⁺ (M=Er, Nd) were monitored with varying the Er³⁺ and Nd³⁺ content in order to find the optimal co-doping concentration when they were prepared by spray pyrolysis. It was found that doping Er³⁺ or Nd³⁺ enhances the PL intensity of BAM:Eu²⁺ blue phosphor particles. In particular, the M³⁺ doping effect on the PL intensity was pronounced when the prepared BAM:Eu²⁺, M³⁺ particles were excited by 172 nm VUV. The maximum intensity was obtained when the M³⁺ content was 1.0 at% with respect to Ba element. The PL intensity of BAM:Eu²⁺, M⁺ (M=Er³⁺, Nd³⁺) particles was also further improved by producing them in a spherical shape, which was successfully achieved by controlling the spray solution. The optimized BAM:Eu²⁺, M⁺ particles had about 10% higher PL intensity than that of the commercial particles, which are made by a conventional solid-state reaction.     

Improved moisture resistance of SrS:Eu phosphors with nanoscale SiO2 coating

Orange-emitting SrS:Eu²⁺ phosphors were coated with nanoscale SiO₂ and their photoluminescence (PL) degradation behavior in moist air was investigated. The SiO₂ coating was obtained by sol-gel process using diethoxydimethylsilane (DEDMS) and the coating content was varied from 0.5 to 2 wt%. The coatings were composed of a uniform, continuous, and amorphous SiO₂ layer of 30-50 nm thickness and the coating thickness was not varied significantly with the coating content. No peak shift and no decrease of PL intensity were observed after coating. The PL intensity of the coated phosphors decreased to ∼75% of the original value after 10 h exposure to moist air, while the uncoated phosphor decreased to ∼33%, which indicates the improved moisture resistance of the nanoscale SiO₂ coated SrS:Eu²⁺ phosphors.     

The effect of different gas atmospheres on luminescent properties of pulsed laser ablated SrAl2O4:Eu,Dy thinfilms

SrAl₂O₄:Eu²⁺,Dy³⁺ thin films were grown on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique to investigate the effect of vacuum, oxygen (O₂) and argon (Ar) deposition atmospheres on the structural, morphological, photoluminescence (PL) and cathodoluminescence (CL) properties of the films. The films were ablated using a 248 nm KrF excimer laser. Atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS) and fluorescence spectrophotometry were used to characterize the thin films. Auger electron spectroscopy (AES) combined with CL spectroscopy were employed for the surface characterization and electron-beam induced degradation of the films. Better PL intensities were obtained from the unannealed films prepared in Ar and O₂ atmospheres with respect to those prepared in vacuum. A stable green emission peak at 515 nm, attributed to 4f⁶5d¹→4f⁷ Eu²⁺ transitions were obtained with less intense peaks at 619 nm, which were attributed to transitions in Eu³⁺. After annealing the films prepared in vacuum at 800 °C for 2 h, the intensity of the green emission (520 nm) of the thin film increased considerably. The amorphous thin film was crystalline after the annealing process. The CL intensity increased under prolonged electron bombardment during the removal of C due to electron stimulated surface chemical reactions (ESSCRs) on the surface of the SrAl₂O₄:Eu²⁺, Dy³⁺ thin films. The CL stabilized and stayed constant thereafter.     

The effects of substrate temperature on the structure, morphology and photoluminescence properties of pulsed laser deposited SrAl2O4:Eu,Dy thin films

In this study, SrAl₂O₄:Eu²⁺,Dy³⁺ thin film phosphors were deposited on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique. The films were deposited at different substrate temperatures in the range of 40-700 °C. The structure, morphology and topography of the films were determined by using X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). Photoluminescence (PL) data was collected in air at room temperature using a 325 nm He-Cd laser as an excitation source. The PL spectra of all the films were characterized by green phosphorescent photoluminescence at ∼530 nm. This emission was attributed to 4f⁶5d¹→4f⁷ transition of Eu²⁺. The highest PL intensity was observed from the films deposited at a substrate temperature of 400 °C. The effects of varying substrate temperature on the PL intensity were discussed.     

Eu photoluminescence enhancement due to thermal energy transfer in Eu2O3-doped SiO2-B2O3-PbO2 glasses system

In this work, Eu³⁺-doped lead borosilicate glasses (SiO₂-B₂O₃-PbO₂) synthesized by fusion method had their optical properties investigated as a function of temperature. Atomic Force Microscopy images obtained for a glass matrix annealed at 350 and 500 °C show a precipitated crystalline phase with sizes 11 and 21 nm, respectively. Besides, as the temperature increases from 350 to 300 K a strong Eu³⁺ photoluminescence (PL) enhancement takes place. This anomalous feature is attributed to the thermally activated carrier transfer process from nanocrystals and charged intrinsic defects states to Eu³⁺ energy levels. In addition, the PL peaks in this temperature range were assigned to the Eu³⁺ transitions ⁵D₀→⁷F₂, at 612 nm, ⁵D₀→⁷F₁, at 595 nm, and ⁵D₀→⁷F₀, at 585 nm. It was also observed that the ⁵D₀→⁷F₃ and ⁵D₀→⁷F₄ PL bands at 655 and 700 nm, respectively, show a continuous decrease in intensity as the temperature increases.     

Excitation process and photoluminescence properties of Tb and Eu ions in SnO2 and in SnO2: Porous silicon hosts

Tin oxide (SnO₂)-layers-doped terbium and europium ions are elaborated by the sol-gel method on silicon substrates. After annealing at 500 °C, the transmission electron microscopy revealed a crystallization of tin oxide.The emission properties of rare-earth in SnO₂ are studied systematically against temperature annealing and Tb³⁺ concentration. The PL spectrum is optimal after annealing at 900 °C and the corresponding photoluminescence (PL) decay is nearly exponential, showing that the sample is homogenous and the PL process can be described by two levels system.The concentration effect shows a quenching of the PL intensity for Tb³⁺ concentration above 4%. From the investigation of the decay rate from the ⁷F₅ state within terbium concentration, we show that self-quenching is insured by dipole - dipole interaction. The evolutions of both PL intensity and PL lifetime versus temperature are studied. The PL intensity and PL lifetime are enhanced by deposing SnO₂:Tb³⁺ and SnO₂:Eu³⁺ in porous silicon. We show that an efficient excitation transfer from Si nanocrystallites to RE ions can occur.     

Synthesis of Y2Si2O7:Eu nanocrystal and its optical properties

Nanocrystalline Y₂Si₂O₇:Eu phosphor with an average size about 60 nm is easily prepared using silica aerogel as raw material under ultrasonic irradiation and annealing temperature at 300-600 °C and this nanocrystalline decomposes into Y₂O₃:Eu and silica by heat treatment at 700-900 °C. The excitation broad band centered at 283 and 254 nm results from Eu³⁺ substituting for Y³⁺ in Y₂Si₂O₇ and Y₂O₃/SiO₂, respectively. Compared with Y₂O₃:Eu/SiO₂ crystalline, the PL excitation and emission peaks of Y₂Si₂O₇:Eu nanocrystalline red-shift and lead to the enhance of its luminescence intensity due to the different chemical surroundings of Eu³⁺ in above nanocrystallines. The decrease of PL intensity may be ascribed to quenching effect resulting from more defects in Y₂O₃:Eu/SiO₂ crystalline.     

Optical properties of (ZnO)0.5(P2O5)0.5 glasses doped with Gd2O3:Eu nanoparticles and Eu2O3

Binary (ZnO)_0.5(P₂O₅)_0.5 glasses doped with Eu₂O₃ and nanoparticles of Gd₂O₃:Eu were prepared by conventional melt-quench method and their luminescence properties were compared. Undoped (ZnO)_0.5(P₂O₅)_0.5 glass is characterized by a luminescent defect centre (similar to L-centre present in Na₂O-SiO₂ glasses) with emission around 324 nm and having an excited state lifetime of 18 ns. Such defect centres can transfer the energy to Eu³⁺ ions leading to improved Eu³⁺ luminescence from such glasses. Based on the decay curves corresponding to the ⁵D₀ level of Eu³⁺ ions in both Gd₂O₃:Eu nanoparticles incorporated as well as Eu₂O₃ incorporated glasses, a significant clustering of Eu³⁺ ions taking place with the latter sample is confirmed. From the lifetime studies of the excited state of L-centre emission from (ZnO)_0.5(P₂O₅)_0.5 glass doped with Gd₂O₃:Eu nanoparticles, it is established that there exists weak energy transfer from L-centres to Eu³⁺ ions. Poor energy transfer from the defect centres to Eu³⁺ ions in Gd₂O₃:Eu nanoparticles doped (ZnO)_0.5(P₂O₅)_0.5 glass has been attributed to effective shielding of Eu³⁺ ions from the luminescence centre by Gd-O-P type of linkages, leading to an increased distance between luminescent centre and Eu³⁺ ions.