Synthesis, field emission and glucose-sensing characteristics of nanostructural ZnO on free-standing carbon nanotubes films

Free-standing multiwall carbon nanotubes (MWNTs) films were coated, using chemical vapor deposition method, with a thin layer of nanostructural ZnO. The morphology and crystal structure of the as-grown products were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman scattering analyses. Field emission (FE) results demonstrated that the needle-like and spherical ZnO-MWNTs composite structure films possessed good performance with a turn-on field of 1.3, 2.2 V μm⁻¹ and a threshold field of 2.6, 4.5 V μm⁻¹, respectively. The glucose-sensing characteristic has also been studied. The multi-layer electrode (PDDA/GOx/ZnO/MWNTs) exhibited significant electrocatalysis to the oxidation and reduction of H₂O₂ than the PDDA/GOx/MWNTs electrode, which provided wide potential applications in clinical, environmental, and food analysis.     

Field emission behavior of cuboid zinc oxide nanorods on zinc-filled porous silicon

Single-crystalline zinc oxide (ZnO) nanorods with cuboid morphology have been prepared on the zinc-filled porous silicon substrate using a vapor phase transport method. Field-emission measurements showed that the turn-on field and threshold field of the cuboid ZnO nanorods film were about 3.2 and 8.2 V/μm respectively. From the emitter surface, a homogeneous emission image was observed with emission site density (ESD) of ∼10⁴ cm⁻². The better emission uniformity and the high ESD may be attributed to a large number of ZnO nanocrystallites as emitter on the surface of the nanorod end contributing to emission.     

Electron emission characteristics of Al-AlN granular films

An electron conduction emitter of Al-AlN granular films was proposed for surface conduction electron emission device in this paper. The Al-AlN granular films with thickness of 30 nm were prepared between two co-planar electrodes with gap of 10 μm by magnetron sputtering. After electroforming the Al-AlN granular films, the films’ structure could be recovered by applying the periodic device voltage (V_f). Stable and uniform electron emission was observed with turn-on voltage of 5.3 V and threshold voltage of 9 V. The emitter emission current (I_e) of 4.84 μA for 36 cells was obtained with the anode voltage of 2.5 kV and the device voltage of 12 V. In addition, Fowler-Nordheim plots for I_e-V_f properties showed that the electron emission mechanism should be field emission.     

Field emission measured from nanostructured germanium and silicon thin films

We have prepared nanostructured thin films of germanium and silicon. The films were grown by an ion beam sputtering technique followed by a rapid annealing step using an electron beam annealer. The annealing temperature is a comparatively low 500 °C, resulting in well defined nano-islands on the film surface. Electron field emission has been measured from the surfaces under high vacuum. The threshold electric field value for significant current flow was measured as 2.5 V μm⁻¹ for a silicon thin film which is comparable to other silicon technologies. A value of 0.5 V μm⁻¹ for a germanium thin film represents an order of magnitude improvement for related germanium nanostructured systems.     

Emission properties of Ti-DLC films prepared by unbalanced magnetron sputtering

The field emission properties of Ti-DLC films in diode and coplanar device structures were studied. An emission current density of 1.14 A/cm² could be obtained at an applied field of 33 V/μm and the threshold field was 24 V/μm for the coplanar emission structure. The silicon substrate was found to limit the emission current in the diode structure because of its high resistivity.     

ZnO nanostructures with different morphologies and their field emission properties

Zinc oxide (ZnO) products with the morphologies of balls, nunchakus and belts have been synthesized from aqueous solutions by adjusting the reagent concentration and reaction time. The X-ray diffraction (XRD) peaks of the products were indexed to ZnO materials, but exhibited different relative intensities for the (0 0 2) diffraction peak. Field emission (FE) measurements showed that the turn-on and threshold field for the ZnO nanonunchakus were 3.01 ± 0.005 and 5.47 ± 0.005, 3.71 ± 0.005 and 6.43 ± 0.005 V/μm, respectively, for the ZnO nanobelts, revealing that the products have comparable FE properties with those of the reported ZnO nanowires and carbon nanotubes (CNTs).     

Enhancement of field emission properties of graphite flakes by producing carbon nanotubes on above using thermal chemical vapor deposition

In order to improve the field emission properties of the graphite flakes, the carbon nanotubes (CNTs) are produced on above without the metallic catalyst using mixtures of C₂H₂ and H₂ gases by thermal chemical vapor deposition. We spin the graphite solution on the silicon wafer and dry it, then synthesize the CNTs on the graphite flakes. We change the synthetic time to obtain the optimal conditions for enhancement of field emission properties of graphite flakes. The experimental results show that the density and quality of the CNTs could be controlled significantly by the synthetic time. Besides, the field emission properties of the treated graphite flakes are also affected greatly by it. The emission current density of the treated graphite flakes reaches to 0.5 mA/cm² at 3 V/μm, and the turn-on field is decreased from 7.7 to 1.9 V/μm after producing the CNTs on above.     

The effect of hydrogen dilution on the field emission from hydrogenated amorphous carbon films

The microstructures and field emission characteristics of hydrogenated amorphous carbon films prepared by using different hydrogen dilution ratio were investigated. It was found that a very low threshold electric field emission could be achieved for samples with moderated hydrogen dilution ratio. However, the field emission characteristics became worse for samples with high hydrogen dilution ratio. The change of field emission can be attributed to the change of electronic structures due to the hydrogen dilution in addition to the increase of the hydrogen surface termination.     

Controlled growth and field emission properties of zinc oxide nanopyramid arrays

Single-crystalline, pyramidal zinc oxide nanorods have been synthesized in a large quantity on p-Si substrate via catalyst-free thermal chemical vapor deposition at low temperature. SEM investigations showed that the nanorods were vertically aligned on the substrate, with diameters ranging from 60 to 80 nm and lengths about 1.5 μm. A self-catalysis VLS growth mechanism was proposed for the formation of the ZnO nanorods. The field emission properties of the ZnO nanopyramid arrays were investigated. A turn-on field about 3.8 V/μm was obtained at a current density of 10 μA/cm², and the field emission data was analyzed by applying the Fowler-Nordheim theory. The stability of emission current density under a high voltage was also tested, indicating that the ZnO nanostructures are promising for an application such as field emission sources.     

Patterned uniformly orientated silicon nanocrystallite films and efficient field emission characteristics

Patterned uniformly (100)-orientated silicon nanocrystallite (SiNC) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and microstructure characteristics of the films were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and atomic force microscopy. The efficient field emission with low turn-on field of about 3.2 V/μm at current density of 0.1 μA/cm² was obtained. The emission current density from the SiNC films reached 1 mA/cm² under a bias field of about 11 V/μm. The experimental results demonstrate that the SiNC films have great potential applications for flat panel displays.     

Field emission from patterned SnO2 nanostructures

A simple and reliable method has been developed for synthesizing finely patterned tin dioxide (SnO₂) nanostructure arrays on silicon substrates. A patterned Au catalyst film was prepared on the silicon wafer by radio frequency (RF) magnetron sputtering and photolithographic patterning processes. The patterned SnO₂ nanostructures arrays, a unit area is of ∼500 μm × 200 μm, were synthesized via vapor phase transport method. The surface morphology and composition of the as-synthesized SnO₂ nanostructures were characterized by means of scanning electron microscopy (SEM) and X-ray diffraction (XRD). The mechanism of formation of SnO₂ nanostructures was also discussed. The measurement of field emission (FE) revealed that the as-synthesized SnO₂ nanorods, nanowires and nanoparticles arrays have a lower turn-on field of 2.6, 3.2 and 3.9 V/μm, respectively, at the current density of 0.1 μA/cm². This approach must have a wide variety of applications such as fabrications of micro-optical components and micropatterned oxide thin films used in FE-based flat panel displays, sensor arrays and so on.     

Improvement of field emission of graphite flakes using hydrogen thermal processing

In order to improve the field electron emission properties of the graphite, the carbon nanoparticles (CNPs) are synthesized on the micrographite flakes by hydrogen thermal processing. We spin the graphite solution on the silicon wafer and desiccate it, then produce the CNPs on the graphite flakes using hydrogen thermal processing in the furnace. The processing parameters such as the processing temperature, hydrogen flow rate and processing time, were varied to find the optimal conditions for the improvement of the field emission properties of the graphite flakes. The experimental results show that the field emission properties of the graphite flakes have glaring improvement after heat treatment owing to the increase of the defect density and the CNPs on above. The turn-on field was decreased from 7.7 of the untreated sample to 4.3 V/μm of the treated sample at the optimal processing conditions.     

The effect of covalent functionalization of carbon nanotube reinforcements on the atomic-level mechanical properties of poly-vinyl-ester-epoxy

The effect of covalent functionalization of (5,5)/(10,10)/(15,15) three-wall carbon nanotubes (3WCNTs) on the atomic-level mechanical properties of 3WCNT-reinforced vinyl ester epoxy polymer has been studied using molecular mechanics calculations. Inter- and intra-molecular atomic interactions in the 3WCNT + vinyl ester epoxy polymer system are represented using condensed-phased optimized molecular potential for atomistic simulation studies (COMPASS), an ab initio forcefield that enables an accurate and simultaneous prediction of various gas-phase and condensed-phase properties of organic and inorganic materials. The computational crystal consisting of a periodic array of infinitely long 3WCNTs surrounded by amorphous poly-vinyl-ester-epoxy is constructed using an in-house developed computer program and the amorphous cell tools by Accelrys. All the computations are carried out using Discover, a molecular statics/dynamics program from Accelrys.The results obtained show that covalent functionalization has a profound effect of the matrix-to-nanotube load transfer especially when the loads are applied in a direction orthogonal to the nanotube axis.     

Raman spectroscopy and field-emission properties of CVD-grown carbon-nanotube films

Carbon-nanotube films are very efficient cathodes for field-emission devices. This study presents a comprehensive comparison between structural, spectroscopic and field-emission properties of films of aligned and non-aligned multi-wall nanotubes (MWNTs) which are grown by thermal chemical vapour deposition. Three types of films are investigated: vertically aligned MWNTs with clean and coated nanotube side walls as well as non-aligned MWNT films. Raman spectra taken on the aligned MWNT films consist of many lines of first-, second- and third-order signals. Several lines are reported here for the first time for MWNTs. The presence of the surface coating leads to a decrease and broadening of the higher-order signals as well as an increase in the disorder-induced contributions in the first-order regime. The aligned MWNT films have excellent field-emission properties with very high emission current densities and low turn-on and threshold fields. The presence of a surface coating has no impact on the efficiency of the field-emission process. Films of non-aligned MWNTs show considerably reduced electron-emission current densities and larger critical fields. Received: 25 April 2001 / Accepted: 30 May 2001 / Published online: 25 July 2001     

Investigation of the influence factors of polyethylene molecule encapsulated into carbon nanotubes by molecular dynamics simulation

In this work, the influence factors, namely chirality, temperature, radius and surface chemical modification, of the interaction energy for polyethylene (PE) molecule encapsulated into single-walled carbon nanotubes (SWNTs) had been investigated by molecular mechanics (MM) and molecular dynamics (MD) simulation. The results showed that all these factors would influence the interaction energy between PE and SWNTs. The interaction energy between PE molecule and the armchair SWNTs is largest among eight kinds of chiral SWNTs. The interaction energy decreases with the increase of temperature or the SWNT radius. The methyl, phenyl, hydroxyl, carboxyl, -F, and amino groups, have been introduced onto the surface of the SWNTs by the simulation software and the influence of SWNT chemical modification has also been investigated. The interaction energy between PE and chemically modified SWNTs is larger than that between PE and pristine SWNTs, and increases with increasing the concentration of the modified groups monotonously. In addition, the group electronegativity and van der Waals force will affect the interaction energy between PE and chemically modified SWNTs greatly, which can be attributed to the electronic structures of the chemically modified groups. This study can provide some useful suggestions for the composite material design and drug transport.     

Synthesis of zinc oxide nanosheet thin films and their improved field emission and photoluminescence properties by annealing processing

ZnO nanosheet thin films have been synthesized through a solvothermal route. These obtained nanosheets disperse quasi-vertically and homogenously on the copper substrates and range in thickness from 80 nm to 250 nm. The as-grown nanosheet thin films were then annealed in the oxygen-presented atmosphere. Field emission plots indicate that the value of turn-on field is reduced from 2.86 V/μm to 1.52 V/μm and the corresponding value of threshold field decreases from 7.19 V/μm to 4.45 V/μm after annealing processing. Room temperature photoluminescence spectrum from the sample annealed at 850 °C in almost pure oxygen atmosphere shows only UV emission and a blue shift while the visible light band is unobservable compared with those of the other two samples, indicating that the crystalline quality of the obtained zinc oxide nanosheet thin films is greatly improved through annealing treatment. This solution approach combined with annealing treatment can, therefore, be regarded as a convenient route to fabricate high-quality crystalline ZnO nanomaterials.     

Carbon nanodot arrays grown as replicas of specially widened anodic aluminum oxide pore arrays

Via a specially widened anodic aluminum oxide (AAO) pore arrays, carbon nanodot arrays with uniform size and high density were obtained through filtered cathodic arc plasma (FCAP) technique. The AAO template was prepared in oxalic acid by multi-steps to get a specially enlarged opening which plays an important role in the deposition of nanodots. The morphology of the nanodots was studied by a field emission scanning electron microscopy (FESEM). The diameter of the as-prepared nanodot demonstrated here is about 100 nm at the bottom and less than 40 nm at the top, and the density was estimated to 10¹⁰ cm⁻². Field emission properties of the nanodot arrays were investigated and a low threshold field of 5.1 V/μm at 10 mA/cm² was obtained. In this paper, the carbon nanodot arrays grown as replicas of the specially widened AAO template may support a strategy to realize the fabrication of nanodot arrays with various materials.     

Area effect of patterned carbon nanotube bundle on field electron emission characteristics

Patterned carbon nanotube (CNT) bundles were fabricated using thermal chemical vapor deposition (CVD) method. Patterns of different diameters and distances were defined on Si(100) substrates using photolithography. CNT bundle height was controlled using different acetylene (C₂H₂) flow times. The inter-bundle distance of CNTs to CNT bundle height ratio was maintained at approximately 2, a number predicted to have a maximum field emission for CNT, and left the patterned CNT bundle area as a variable parameter. The relationship between CNT bundle area and the field electron emission characteristics was studied. The lowest threshold electric field (E_th) of 0.7 V/μm was obtained when the total area of patterned CNT bundles was approximately 46%. The result shows that there is an optimal CNT bundle area for electron field emission.     

Enhanced field emission from ZnO nanopencils by using pyramidal Si(1 0 0) substrates

Zinc oxide nanopencil arrays were synthesized on pyramidal Si(1 0 0) substrates via a simple thermal evaporation method. Their field emission properties have been investigated: the turn-on electric field (at the current density of 10 μA/cm²) was about 3.8 V/μm, and the threshold electric field (at the current density of 1 mA/cm²) was 5.8 V/μm. Compared with similar structures grown on flat Si substrates, which were made as references, the pyramidal Si-based ZnO nanopencil arrays appeared to be superior in field emission performance, thus the importance of the non-flat substrates has been accentuated. The pyramidal Si substrates could not only suppress the field screening effect but also improve the field enhancement effect during the field emission process. These findings indicated that using non-flat substrates is an efficient strategy to improve the field emission properties.     

Enhanced Field Emission from Large-Area Arrays of W18O49 Pencil-Like Nanostructure

Field enhancement and field screening are two major factors affecting field emission performance of arrays of quasi one-dimensional nanostructures. We have observed enhanced field emission from large-area arrays of W₁₈O₄₉ pencil-like nanostructure due to both the effects of high aspect ratio and enlarged spacing between neighboring nanostructures. These arrays may be grown on silicon substrates by the multi-step thermal evaporation process. The spacing of nanotip-to-nanotip between neighboring nanostructures may be increased by adjusting the growth temperature. The arrays are observed to have a typical turn-on field as low as about 1.26 MV/m and a threshold field as low as about 3.39 MV/m, resulting in increasing field enhancement and decreasing field screening effect.