Oxidation-alcoholysis of organosilyl- and organogermyl-substituted ferrocenes in the presence of ferric ions

Eleven ferrocene derivatives bearing the MM (M = Si and/or Ge) substituent bonded directly to the ring have been found to undergo alcoholysis at the MM linkage in the presence of either ferric chloride or ferricenium tetrachloroferrate. It is suggested that the oxidation-reduction process between the ferrocene derivatives and ferric ions gives rise to the corresponding substituted ferricenium ions, which, in turn may readily undergo a nucleophilic attack by alcohol at the adjacent highly polarized MM bond. The reaction is thus very similar to the acid-catalyzed alcoholysis of these ferrocene derivatives.     

Cleavage of silicon- and germanium-transition metal bonds. Dependences of the stereochemistry on the nature of the ligands and the geometry of complexes

The cleavages of some new optically active complexes containing CoSi (orGe), MnSi (orGe), ReGe and WGe bonds are described. Electrophiles cleave the CoSi bond with good retention of configuration at silicon, while the MnSi bond is not cleaved under the same conditions. The M′Si and M′Ge bonds (where M'  transition metal) are cleaved by nucleophiles with retention or inversion of configuration. In the case of triginal bipyramidal geometry (cobalt complexes) the stereochemical outcome of the reaction is strongly dependent upon electronic effects, the size of the ligand trans to the CoSi (orGe) bond, and the nature of the nucleophilic reagant, in accord with the general rules for nucleophilic substitution at silicon. In contrast the transition metalsilicon orgermanium bonds in the octahedral complexes of manganese, rhenium and tungsten are always cleaved with poor retention of configuration regardless of the nature of the ligands or the nucleophilic reagent. The results provide the first cases in which the stereochemistry of nucleophilic displacement at silicon is independent of the electronic features of both the leaving group and the nucleophile.     

Reactions of organochlorosilanes with chloro-and organogermanes in the presence of aluminum chloride

The effect of substituents at the silicon and germanium atoms in reactions of organochlorosilanes with chloro-and organogermanes in the presence of aluminum chloride was studied. The only occurring process is the exchange of the chlorine atoms at Ge for the phenyl groups from Si; an increase in the number of methyl groups or chlorine atoms at Si promotes formation of phenyltrichlorogermane, and an increase in the number of phenyl groups or replacement of the chlorine atom at the Si atom by hydrogen leads to the formation of di-and triphenylchlorogermanes. Neither phenyl nor other radicals are transferred back from Ge to Si in the course of reactions of phenylgermanes with methylchlorosilanes in the presence of aluminum chloride; the only occurring processes are the exchange of the phenyl or methyl radicals bonded to Ge for the Cl atom bonded to Al and the disproportionation of phenylchlorogermanes.     

Structural investigations on the hydrolysis and condensation behavior of pure and chemically modified alkoxides. 2. Germanium alkoxides

Structural investigations on the hydrolysis and condensation behavior of germanium alkoxides were for the first time performed by means of X-ray absorption fine structure and Raman spectroscopy. The studies reveal that germanium alkoxides are monomeric in nature and undergo very fast hydrolysis and condensation reactions upon water addition. However, the chelation of germanium alkoxides by acetylacetone does not take place even 48 h after mixing, and any change in hydrolysis and condensation behavior is not observed after acetylacetone addition. When mixed with prehydrolyzed silicon alkoxide, the structures of germanium alkoxides are not modified. Both Si and Ge precursors are insensitive to the presence of each other in the reaction solution even after 48 h of aging. The addition of water to this mixture catalyzes the hydrolysis and condensation reactions very fast and leads to the formation of Ge-O-Ge (and consequently Si-O-Si) homocondensation products.     

Ab initio Study on Formation Mechanism of Spiro-Si-Heterocyclic Ring Compound Involving Ge from H2Ge=Si: and Formaldehyde

H₂Ge=Si: and its derivatives (X₂Ge=Si:, X=H, Me, F, Cl, Br, Ph, Ar,…) are new species. Its cycloaddition reactions are new area for the study of silylene chemistry. The cycloaddition reaction mechanism of singlet H₂Ge=Si: and formaldehyde has been investigated with the MP2/aug-cc-pVDZ method. From the potential energy profile, it could be predicted that the reaction has one dominant reaction pathway. The reaction rule is that two reactants firstly form a four-membered Ge-heterocyclic ring silylene through the [2+2] cycloaddition reaction. Because of the 3p unoccupied orbital of Si: atom in the four-membered Ge-heterocyclic ring silylene and the π orbital of formaldehyde forming a π→p donor-acceptor bond, the four-membered Ge-heterocyclic ring silylene further combines with formaldehyde to form an intermediate. Because the Si: atom in the intermediate undergoes sp³ hybridization after transition state, then the intermediate isomerizes to a spiro-Si-heterocyclic ring compound involving Ge via a transition state. The result indicates the laws of cycloaddition reaction between H₂Ge=Si: or its derivatives (X₂Ge=Si:, X=H, Me, F, Cl, Br, Ph, Ar,…) and asymmetric π-bonded compounds are significant for the synthesis of small-ring involving Si and Ge and spiro-Si-heterocyclic ring compounds involving Ge.     

Electronic properties of Si and Ge atoms doped in clusters: In(n)Si(m) and In(n)Ge(m)

Electronic properties of silicon and germanium atom doped indium clusters, In(n)Si(m) and In(n)Ge(m), were investigated by photoionization spectroscopy of the neutrals and photoelectron spectroscopy of the anions. Size dependence of ionization energy and electron affinity for In(n)Si(1) and In(n)Ge(1) exhibit pronounced even-odd alternation at cluster sizes of n = 10-16, as compared to those for pure In(n) clusters. This result shows that symmetry lowering with the doped atom of Si or Ge results in undegeneration of electronic states in the 1d shell formed by monovalent In atoms.     

The first halogen-substituted cyclotrigermenes: a unique halogen walk over the three-membered ring skeleton and facial stereoselectivity in the Diels-Alder reaction

Dark red crystals of the halogen-substituted cyclotrigermenes [(tBu3Si)3Ge3X; X = Cl, Br, I] were obtained in good yields by the reaction of [(tBu3Si)3Ge3]+.TTFPB- (TTFPB- = tetrakis(2,3,5,6-tetrafluorophenyl)borate) with potassium halides (KCl, KBr, or KI) in diethyl ether. The crystal structures of the halogen-substituted cyclotrigermenes reveal a cis-bent Ge=Ge double bond, caused by the introduction of the electronegative halogen atom on the sp3 germanium atom of cyclotrigermene. In solution, an intramolecular halogen migration over the three-membered ring skeleton was observed. Facial stereoselectivity in the Diels-Alder reaction of new cyclotrigermenes with 2,3-dimethyl-1,3-butadiene is also reported.     

Evaluation of beta- and gamma-effects of group 14 elements using intramolecular competition

To evaluate beta-effects and gamma-effects of group 14 elements, we have devised a system in which the intramolecular competition between gamma-elimination of tin and beta-elimination of silicon, germanium, and tin can be examined. Thus, the reactions of alpha-acetoxy(arylmethyl)stannanes with allylmetals (metal = Si, Ge, Sn) in the presence of BF(3).OEt(2) were carried out. The reactions seem to proceed by the initial formation of an alpha-stannyl-substituted carbocation, which adds to an allylmetal to give the carbocation that is beta to the metal and gamma to tin. The beta-elimination of the metal gives the corresponding allylated product, and the gamma-elimination of tin gives the cyclopropane derivative. In the case of allylsilane, the cyclopropane derivative was formed as a major product, whereas in the case of allylgermane the allylated product was formed predominantly. In the case of the allystannane the allylated product was formed exclusively. These results indicate that the gamma-elimination of tin is faster than the beta-elimination of silicon, but slower than the beta-elimination of germanium and tin. The theoretical studies using ab initio molecular orbital calculations of the carbocation intermediates are consistent with the experimental results. The effect of substituents on silicon was also studied. The introduction of sterically demanding substituents on silicon disfavored the beta-elimination of silicon probably because of the retardation of nucleophilic attack on silicon to cleave the carbon-silicon bond.     

Saturated Heavier Group 14 Compounds as ‐Electron‐Acceptor (Z‐Type) Ligands

This review article describes the chemistry of transition‐metal complexes containing heavier group 14 elements (Si, Ge, and Sn) as the σ‐electron‐acceptor (Z‐type) ligands and discusses the characteristics of bonds between the transition metal and Z‐type ligand. Moreover, we review the iridium hydride mediated cleavage of E–X bonds (E=Si, Ge; X=F, Cl), where the key intermediates are pentacoordinate silicon or germanium compounds bearing a dative M→E bond.     

Ultrathin films of Ge on the Si(100)2 × 1 surface

The Ge/Si(100)2 × 1 interface was investigated by means of Auger electron spectroscopy, low‐energy electron diffraction, thermal desorption spectroscopy, and work function measurements, in the regime of a few monolayers. The results show that growth of Ge at room temperature forms a thermally stable amorphous interface without significant intermixing and interdiffusion into the substrate, for annealing up to ~1100 K. Therefore, the Ge‐Si interaction most likely takes place at the outmost silicon atomic plane. The charge transfer between Ge and Si seems to be negligible, indicating a rather covalent bonding. Regarding the Ge overlayer morphology, the growth mode depends on the substrate temperature during deposition, in accordance with the literature. Stronger annealing of the germanium covered substrate (>1100 K) causes desorption of not only Ge adatoms, but also SiGe and Ge₂ species. This is probably due to a thermal Ge‐Si interdiffusion. In that case, deeper silicon planes participate in the Ge‐Si interaction. Above 1200 K, a new Ge superstructure (4 × 4)R45^o was observed. Based on that symmetry, an atomic model is proposed, where Ge adatom pairs interact with free silicon dangling bonds.     

A computational investigation of copper-doped germanium and germanium clusters by the density-functional theory

The geometries, stabilities, and electronic properties of Ge(n) and CuGe(n) (n = 2-13) clusters have been systematically investigated by using density-functional approach. According to optimized CuGe(n) geometries, growth patterns of Cu-capped Ge(n) or Cu-substituted Ge(n+1) clusters for the small- or middle-sized CuGe(n) clusters as well as growth patterns of Cu-concaved Ge(n) or Ge-capped CuGe(n-1) clusters for the large-sized CuGe(n) clusters are apparently dominant. The average atomic binding energies and fragmentation energies are calculated and discussed; particularly, the relative stabilities of CuGe10 and Ge10 are the strongest among all different sized CuGe(n) and Ge(n) clusters, respectively. These findings are in good agreement with the available experimental results on CoGe10- and Ge10 clusters. Consequently, unlike some transition metal (TM)Si12, the hexagonal prism CuGe12 is only low-lying structure; however, the basket-like structure is located as the lowest-energy structure. Different from some TM-doped silicon clusters, charge always transfers from copper to germanium atoms in all different sized clusters. Furthermore, the calculated highest occupied molecular orbital and lowest unoccupied molecular orbital (HOMO-LUMO) gaps are obviously decreased when Cu is doped into the Ge(n) clusters, together with the decrease of HOMO-LUMO gaps, as the size of clusters increases. Additionally, the contribution of the doped Cu atom to bond properties and polarizabilities of the Ge(n) clusters is also discussed.     

Fragmentation and rearrangement processes in the mass spectra of perhalogenoaromatic compounds—VIII: Fluoroaromatic heterocyclic derivatives of group IV

The metastable ion supported fragmentations and fluorine transfer rearrangements of a series of fluoroaromatic heterocyclic derivatives of silicon, germanium and tin are reported. Of particular interest is the unique loss of neutral SiF₄ from the parent ion of (C₁₂F₈)Si yielding the [C₂₄F₁₂]⁺˙ ion. These and similar rearrangements are discussed and structures are proposed for some of the ions observed. The general case of cyclic rearrangement intermediates prior to the loss of neutral metal fluorides from perfluoroaromatic derivatives is discussed. Losses of neutral metal fluorides from the parent ions appear to involve a species with increased co-ordination number about the central atom as an intermediate. In addition to (C₁₂F₈)₂M, the following compound types were studied: (C₆H₅)₂Ge(C₁₂F₈), (C₁₂F₈S)₂M and R₄Sn₂(C₆F₄)₂ (where M = a Group IV metal and R = CH₃ or C₆H₅).     

Hypercoordination in triphenyl oxinates of the group 14 elements

The triphenyl oxinates of the group 14 elements (M = Si, Ge, Sn, and Pb) contain the 8-hydroxyquinoline ligand (HOx), which can function in either a bidentate or monodentate fashion. The compounds Ph₃MO_x were prepared by reaction of the triphenylmetal chloride with HOx in the presence of an HCl scavenger triethylamine or, sodium acetate, and in the case of lead, with the sodium salt of 8-hydroxyquinoline. The interaction of the nitrogen with the central atom was studied through the use of the NMR chemical shifts of the central metal atom and the ¹⁵N atom of the ligand. The chemical shifts of the central metal provided evidence that the triphenylgermanium and silicon oxinates are uncoordinated while the triphenyltin and lead oxinates are five-coordinate. These conclusions are confirmed by molecular modeling, ¹⁵N chemical shifts and the metal-¹³C one bond coupling constants at the ipso carbon. The NMR data provides evidence that the strength of the interaction of the nitrogen with the metal increases from silicon and germanium to lead. Two peaks in the 5-coordinate region of the ²⁰⁷Pb NMR spectra can be rationalized with the postulate that strong interaction with lead produces two geometrical isomers. Two peaks were also present in the 5-coordinate region of the ¹¹⁹Sn NMR spectra at low temperatures indicating a rapid exchange between the two geometrical isomers at room temperature.     

平面五配位硅、 锗XBe5H6(X=Si,Ge)团簇

采用密度泛函理论PBE0方法, 在aug-cc-pVTZ水平上理论预测了含平面五配位硅和锗原子的XBe₅H₆ (X=Si, Ge)团簇. 势能面系统搜索及高精度量化计算表明, 它们均为全局极小结构. XBe₅H₆(X=Si, Ge)团簇整体呈完美的扇形结构: Si/Ge原子被5个金属Be原子配位; 4个H原子以桥基方式与Be原子相键连, 剩余的2个 H原子以端基方式与两端的Be原子成键. 化学键分析表明, XBe₅H₆(X=Si, Ge) 团簇中XBe₅单元具有完全离域的1个π及3个σ键, 外围铍氢间形成4个Be—H—Be 三中心二电子(3c-2e)键及2个定域的Be—H键. XBe₅单元上离域的2π及6σ电子赋予体系π和σ双重芳香性, 并使Si/Ge原子满足八隅律（或八电子规则）. 能量分解-化学价自然轨道分析揭示, Si/Ge和Be₅H₆之间主要为电子共享键.     

Mixed silicon–germanium nanocrystals: a detailed study of Si<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript>47−<Emphasis Type="Italic">x</Emphasis></Subscript>:H

Mixed SiGe:H nanocrystals have been studied within the framework of Density Functional Theory. (DFT) using the hybrid non-local exchange-correlation functional of Becke, Lee, Parr and Yang (B3LYP). In addition to ground-state DFT/B3LYP calculations, excited-state calculations for the determination of the optical absorption spectrum have been performed employing the time-dependent density functional theory (TDDFT). In order to fully investigate the substitution of Si by Ge, on structural, cohesive, electronic and optical properties, we have used the Si _x Ge_47−x :H nanocrystal, as a representative medium size nanosystem. Our results show that the optical gap depends not only on the relative concentrations of silicon, germanium and hydrogen, but also on the relative position of the silicon and germanium shells relative to the surface of the nanocrystal. This is also true for the structural, cohesive and electronic properties. This dependence allows for the possibility of electronic and optical gap engineering.     

A Potential Method Using Ge{iPrNC[N(SiMe3)2]NiPr}2, (Et3Si)2Te and Anhydrous Hydrazine for Germanium Tellurides

A germanium(II)‐guanidine derivative of formula Ge{iPrNC[N(SiMe₃)₂]NiPr}₂ ( 1 ) was synthesized and characterized by ¹H NMR, ¹³C NMR, elemental analysis, and X‐ray diffraction method. Thermal property was also studied to identify its thermal stability and volatility. More importantly, compound 1 was synthesized to develop a new method for germanium tellurides, where anhydrous hydrazine was introduced to prompt the activity of germanium(II) guanidines (or derivatives) towards (Et₃Si)₂Te. Solution reaction of compound 1 , (Et₃Si)₂Te, and anhydrous hydrazine was investigated to pre‐identify the feasibility of this combination for ALD process. The EDS data of the black precipitate from this reaction verified the potential of this method to manufacture germanium tellurides.     

Ab initio MO and DFT study for the isomerisation of bicyclo[1.1.0]tetrasilane and the germanium analogues

The mechanism of the unimolecular isomerisation reaction of the silicon and germanium analogues of bicyclo[1.1.0]butane with various kinds of substituents (X₄R₆; X?=?Si and Ge, R=H, CH₃, t-Bu and SiH₃) to the corresponding cyclobutene analogues has been investigated by ab initio molecular orbital and DFT methods. Several reaction mechanisms were considered. They are roughly divided into two types; (1) skeletal rearrangement and (2) substituent migration. It was found that substituents (R) have the leading effect on the reaction mechanism but the partial or full replacement of the skeletal silicon atoms by germanium atoms has some important effects as well. Furthermore, the character of the bridge bond of the long-bond and short-bond isomers of these bicyclic compounds was investigated and discussed in comparison with the ?? bond in ethene and disilene by the CiLC analysis.     

The Insertion of EII and EIV Chlorides (E=Si,Ge) into the Si−Si Bond of Disilylene

Reactions of silicon and germanium dichlorides L ⋅ ECl₂ (E=Si, L=IPr; E=Ge, L=dioxane) with the phosphinoamidinato-supported disilylene ({κ²(N,P)-NNP}Si)₂ resulted in formal tetrylene insertions into the Si−Si bond. In the case of the reaction with silylene, two products were isolated. The first product ({κ²(N,P)-NNP}Si)₂SiCl₂, is the formal product of direct SiCl₂ insertion into the Si−Si bond of ({κ²(N,P)-NNP}Si)₂ and thus features two separated silylamido silylene centers. Over time, migration of the SiCl₂ group to a lateral position afforded the second product, the disilylene {κ²(Si,P)−SiCl₂NNP}Si−Si{κ²(N,P)-NNP}. In contrast, insertion of GeCl₂ resulted only in the isolation of the germanium analogue of {κ²(Si,P)−SiCl₂NNP}Si−Si{κ²(N,P)-NNP}, containing a Ge atom in the central position namely, compound {κ²(Si,P)−SiCl₂NNP}Ge−Si{κ²(N,P)-NNP}, which is a rare example of a silylene-germylene. Finally, reaction of disilylene ({κ²(N,P)−NNP}Si)₂ with SiCl₄ and SiHCl₃ led to the formation of the new bis(silyl)silylene, ({NNP}SiCl₂)₂Si:. All four new products from these insertion reactions have been characterized by multinuclear NMR and single-crystal X-ray diffraction studies.     

Recent developments in the chemistry of stable doubly bonded germanium compounds

During the last 10 years, several compounds of the type Ge=X (X = C, Ge, N, P, S) have been isolated as monomers. The stabilization of such derivatives, which are generally highly polymerizable, was achieved by using very bulky groups both on the germanium atom and on the heteroelement X. Conjugation (particularly in a few germenes and germaimines) and intramolecular or intermolecular coordination with oxygen or nitrogen, also contributes, in some cases, to the stabilization. The X-ray analyses of such compounds show a significant bond shortening of the double bond (8–10%) relative to the corresponding single bond and a planar or nearly planar germanium. These doubly bonded germanium derivatives are usually thermally stable but must be handled in an inert atmosphere because of their high sensitivity to oxygen and moisture; they are extremely reactive, much more than the corresponding carbon analogues. Nearly quantitative additions on the double bond have been observed with electrophiles and nucleophiles, and various types of cycloadditions also occur. Except in one case, a germylene behavior has not been observed, proving that such compounds retain their structural integrity in solution.     

Quantum-chemical calculation of the thermodynamics of multistep hydrolysis of MX<Subscript>4</Subscript> molecules (M = C,Si, Ge; X = H,F, Cl) in the gas phase

The standard enthalpies, entropies, and Gibbs free energies of separate stages of the multistep hydrolysis of MX₄ molecules (M = C, Si, Ge; X = H, F, Cl) in the gas phase at 298 K were calculated by the G3 high-precision quantum-chemical method of calculation of thermodynamic parameters. The trends in these parameters were analyzed for each group of molecules. The calculated thermodynamic parameters make it possible to estimate the theoretical limits for the contents of water and hydrolysis products in the above high-purity carbon, silicon, and germanium derivatives.