A stress-gradient based criterion for dislocation nucleation in crystals

Dislocations are the main lattice defects responsible for the strength and ductility of crystalline solids. The generation of new dislocations is an essential aspect of crystal defect physics, but a fundamental understanding of the mechanical conditions which lead to dislocation nucleation has remained elusive. Here, we present a nucleation criterion motivated from continuum thermomechanical considerations of a crystalline solid undergoing deformation, and demonstrate the criterion's ability to correctly predict dislocation nucleation via direct atomistic simulations. We further demonstrate that the commonly held notion of a nucleation criterion based on the magnitude of local stress components is incorrect.     

Multiscale plasticity modeling: coupled atomistics and discrete dislocation mechanics

A computational method (CADD) is presented whereby a continuum region containing dislocation defects is coupled to a fully atomistic region. The model is related to previous hybrid models in which continuum finite elements are coupled to a fully atomistic region, with two key advantages: the ability to accomodate discrete dislocations in the continuum region and an algorithm for automatically detecting dislocations as they move from the atomistic region to the continuum region and then correctly “converting” the atomistic dislocations into discrete dislocations, or vice-versa. The resulting CADD model allows for the study of 2d problems involving large numbers of defects where the system size is too big for fully atomistic simulation, and improves upon existing discrete dislocation techniques by preserving accurate atomistic details of dislocation nucleation and other atomic scale phenomena. Applications to nanoindentation, atomic scale void growth under tensile stress, and fracture are used to validate and demonstrate the capabilities of the model.     

A study of conditions for dislocation nucleation in coarser-than-atomistic scale models

We perform atomistic simulations of dislocation nucleation in defect free crystals in 2 and 3 dimensions during indentation with circular (2D) or spherical (3D) indenters. The kinematic structure of the theory of Field Dislocation Mechanics (FDM) is shown to allow the identification of a local feature of the atomistic velocity field in these simulations as indicative of dislocation nucleation. It predicts the precise location of the incipient spatially distributed dislocation field, as shown for the cases of the Embedded Atom Method potential for Al and the Lennard–Jones pair potential. We demonstrate the accuracy of this analysis for two crystallographic orientations in 2D and one in 3D. Apart from the accuracy in predicting the location of dislocation nucleation, the FDM based analysis also demonstrates superior performance than existing nucleation criteria in not persisting in time beyond the nucleation event, as well as differentiating between phase boundary/shear band and dislocation nucleation. Our analysis is meant to facilitate the modeling of dislocation nucleation in coarser-than-atomistic scale models of the mechanics of materials.     

An atomistic and non-classical continuum field theoretic perspective of elastic interactions between defects (force dipoles) of various symmetries and application to graphene

Force multipoles are employed to represent various types of defects and physical phenomena in solids: point defects (interstitials, vacancies), surface steps and islands, proteins on biological membranes, inclusions, extended defects, and biological cell interactions among others. In the present work, we (i) as a prototype simple test case, conduct quantum mechanical calculations for mechanics of defects in graphene sheet and in parallel, (ii) formulate an enriched continuum elasticity theory of force dipoles of various anisotropies incorporating up to second gradients of strain fields (thus accounting for nonlocal dispersive effects) instead of the usual dispersion-less classical elasticity formulation that depends on just the strain (c.f. Peyla, P., Misbah, C., 2003. Elastic interaction between defects in thin and 2-D films. Eur. Phys. J. B. 33, 233-247). The fundamental Green's function is derived for the governing equations of second gradient elasticity and the elastic self and interaction energies between force dipoles are formulated for both the two-dimensional thin film and the three-dimensional case. While our continuum results asymptotically yield the same interaction energy law as Peyla and Misbah for large defect separations (∼1/rⁿ for defects with n-fold symmetry), the near-field interactions are qualitatively far more complex and free of singularities. Certain qualitative behavior of defect mechanics predicted by atomistic calculations are well captured by our enriched continuum models in contrast to classical elasticity calculations. For example, consistent with our atomistic calculations of defects in isotropic graphene, even two dilation centers show a finite interaction (as opposed to classical elasticity that predicts zero interaction). We explicitly find the physically consistent result that the self-energy of a defect is equivalent to half the interaction energy between two identical defects when they “merge” into each other. The atomistic, classical elastic and the enriched continuum predictions are thoroughly compared for two types of defects in graphene: Stone-Wales and divacancy.     

Effects of grain boundary on irradiation-induced zero-dimensional defects in an irradiated copper

Grain boundaries(GBs) can serve as effective sinks for radiation-induced defects, thus notably influencing the service performance of materials. However, the effect of GB structures on the zero-dimensional defects induced by irradiation has not been fully elucidated. Here, the evolution of cascade collision in the single-crystal(SC),bicrystalline(BC), and twinned crystalline(TC) copper is studied by atomic simulations during irradiation. The spatial distributions of vacancies and interstitials a...     

Defects in crystalline materials and their relation to mechanical properties

This paper is divided into two major sections. The first of these describes the types of defects which may arise in crystalline materials. These may be classified as point, line, sheet and volume defects, examples of the four groups being vacancies, dislocations, grain boundaries and precipitates. The basic defects of crystal structures are first described, particular attention being paid to dislocation lines and the way in which a perfect dislocation may dissociate into two partial dislocations and a ribbon of stacking fault. The motion of defects, including glide, climb and cross-slip is discussed. This section ends with a summary of the ways in which basic defects may interact and combine, and be used to describe such microstructural features as deformation twins and precipitate boundaries. These defects form the basis of the mechanisms, given in the second part of the paper, which have been used to explain the various phenomena of hardening and fracture. No attempt has been made to give detailed theories of these mechanical properties. The treatment is intended for the nonspecialist, interested in obtaining an understanding of how a knowledge of the microstructure of materials may be applied to specific problems.     

Atomistic simulation study on key factors dominating dislocation nucleation from a crack tip in two FCC materials: Cu and Al

Dislocation nucleations from crack tips in FCC copper and aluminum are studied using atomistic simulations. It is shown that the critical load for dislocation nucleation predicted by Rice’s model (Rice, 1992) based on the Peierls concept of dislocation can either be under- or over-estimated in reference to the simulation results. Such discrepancies have not been fully resolved by existing improved nucleation models, due to the complicated atomic environments at crack tips. Based on our simulation results, it is proposed that such discrepancies can be reconciled by the competition of two coupling processes at a crack tip: the tension-shear coupling, which facilitates the dislocation nucleation, and the nucleation-debonding coupling, which retards the dislocation nucleation. In addition, the two couplings are applied to explain the paradoxical observation: easy dislocation nucleation at a blunted crack tip. The present work provides a detailed picture to justify future improvements on Rice’s model for dislocation nucleation and to accurately predict intrinsic brittle to ductile transition for crystalline materials.     

缺陷对石墨烯摩擦性能影响的分子动力学研究

采用分子动力学方法模拟硅探针在空位缺陷和Stone-Wales(SW)缺陷石墨烯上的滑移过程,研究空位缺陷和SW缺陷对石墨烯摩擦力的影响.研究结果表明:两种缺陷石墨烯摩擦力大于完美石墨烯,空位缺陷使石墨烯界面势垒增大导致能量耗散增加,摩擦力增大;SW缺陷使石墨烯表面形成凸起,阻碍探针滑移,摩擦力增大.空位缺陷石墨烯平均摩擦力随缺陷浓度的增加而增加,Y向空位缺陷石墨烯平均摩擦力大于X向,这都是由空位陷处能量势垒和缺陷与探针切向作用距离共同决定的.SW2型缺陷石墨烯摩擦力大于SW1型,X向SW2型缺陷石墨烯摩擦力大于Y向SW2型,因为存在相邻五边形碳原子环结构的石墨烯表面更容易产生凸起,摩擦力较大.以上研究结果完善了缺陷石墨烯的摩擦机制,对设计和开发石墨烯微纳器件提够了理论依据和指导.     

On the nonlocal nature of dislocation nucleation during nanoindentation

Using static atomistic simulations, we study the full details of the mechanism by which dislocations homogeneously nucleate beneath the surface of a initially defect-free crystal during indentation. The mechanism involves the collective motion of a finite disk of atoms over two adjacent slip planes, the diameter of which depends on the indenter size. The nucleation mechanism highlights the need for nonlocal considerations in the development of a nucleation criterion. We review three nucleation criteria from the literature, each of which is based on purely local measures of the state of stress, and show that none are sufficiently general to predict nucleation in realistic atomic systems. We then propose a criterion based on an eigenmode analysis of the atomic-scale acoustic tensor. We demonstrate the accuracy of the criterion, which also works in the presence of existing topological defects like free surfaces or dislocation cores. The dependence of the size of the nucleated disk on the indenter radius leads to a self-similar nucleation process and virtually no indentation size effect (ISE), suggesting that homogeneous nucleation is only possible for very small indenters.     

High-temperature discrete dislocation plasticity

A framework for solving problems of dislocation-mediated plasticity coupled with point-defect diffusion is presented. The dislocations are modeled as line singularities embedded in a linear elastic medium while the point defects are represented by a concentration field as in continuum diffusion theory. Plastic flow arises due to the collective motion of a large number of dislocations. Both conservative (glide) and nonconservative (diffusion-mediated climb) motions are accounted for. Time scale separation is contingent upon the existence of quasi-equilibrium dislocation configurations. A variational principle is used to derive the coupled governing equations for point-defect diffusion and dislocation climb. Superposition is used to obtain the mechanical fields in terms of the infinite-medium discrete dislocation fields and an image field that enforces the boundary conditions while the point-defect concentration is obtained by solving the stress-dependent diffusion equations on the same finite-element grid. Core-level boundary conditions for the concentration field are avoided by invoking an approximate, yet robust kinetic law. Aspects of the formulation are general but its implementation in a simple plane strain model enables the modeling of high-temperature phenomena such as creep, recovery and relaxation in crystalline materials. With emphasis laid on lattice vacancies, the creep response of planar single crystals in simple tension emerges as a natural outcome in the simulations. A large number of boundary-value problem solutions are obtained which depict transitions from diffusional to power-law creep, in keeping with long-standing phenomenological theories of creep. In addition, some unique experimental aspects of creep in small scale specimens are also reproduced in the simulations.     

COARSE-GRAINED ATOMISTIC MODELING AND SIMULATION OF INELASTIC MATERIAL BEHAVIOR

This paper presents a new methodology for coarse-grained atomistic simulation of inelastic material behavior including phase transformations in ceramics and dislocation mediated plasticity in metals. The methodology combines an atomistic formulation of balance equations and a modified finite element method. With significantly fewer degrees of freedom than those of a fully atomistic model and without additional constitutive rules but the interatomic force field, the new coarse-grained (CG) method is shown to be feasible in predicting the nonlinear constitutive responses of materials and also reproducing atomic-scale phenomena such as phase transformations (diamond →β-Sn) in silicon and dislocation nucleation and migration, formation of dislocation loops and stacking faults ribbons in single crystal nickel. Direct comparisons between CG and the corresponding full molecular dynamics (MD) simulations show that the present methodology is efficient and promising in modeling and simulation of inelastic material behavior without losing the essential atomistic features. The potential applications and the limitations of the CG method are also discussed.     

A multiscale method for dislocation nucleation and seamlessly passing scale boundaries

In the concurrent multiscale analysis, it is difficult to have truly seamless transition between the atomistic and continuum scale. This situation is even worse when defects pass through the boundary between different scales. For example, there is a lack of effective methods to handle the dislocation passing through scale boundaries which is important to investigate plasticity at the nanoscale. In this paper, the generalized particle (GP) method proposed by the first author is further developed so that a seamless transition and dislocation passing between different scales can be realized. Specifically, the linkage between different scales is through material neighbor-link cells (NLC) with scale duality. This indicates that material elements can be high-scale particles through a lumping process and can also be atoms via decomposition depending on the needs of the simulation. At the interface, the information transfer from bottom scale-up or from top scale-down is through the particles or atoms in the NLC. They are with the same material structure, all possess nonlocal constitutive behavior; thus, the smooth transition at the interface between different scales can be attained and validated to avoid non-physical responses. To save degrees of freedom, atoms are lumped together into a generalized particle in the domain in which the deformation gradient is near homogeneous. On the other hand, when defects such as dislocations in the atomistic domain are near the particle domain, the particles along dislocation propagation path and its surrounding region will be decomposed into atoms so dislocations can freely pass through the scale boundary and propagate inside the model just as it propagates in the deformed atomistic crystal structure. The method is verified first for seamless transition of variables at the scale boundary by a one-dimensional model and then verified for dislocation nucleation and propagation passing through scale boundaries in two cases, one is near the free surface and the other is inside of the copper nanowire. All the validations are through comparisons with fully atomistic analyses under same conditions. The comparison is satisfactory.     

Green’s function-based multiscale modeling of defects in a semi-infinite silicon substrate

We have developed a Green’s function (GF) based multiscale modeling of defects in a semi-infinite silicon substrate. The problem—including lattice defects and substrate surface, i.e., an extended defect, at different length scales—is first formulated within the theory of lattice statics. It is then reduced and solved by using a scale-bridging technique based on the Dyson’s equation that relates a defect GF to a reference GF and on the asymptotic relationship of the reference lattice-statics GF (LSGF) to the continuum GF (CGF) of the semi-infinite substrate. The reference LSGF is obtained approximately by solving the boundary-value problem of a super-cell of lattice subject to a unit point force and under a boundary condition given by the reference CGF. The Tersoff potential of silicon, germanium and their compounds is used to derive the lattice-level force system and force constants and further to derive the continuum-level elastic constants (of the bulk silicon, needed in the reference CGF). We have applied the method to solve for the lattice distortion of a single vacancy and a single germanium substitution. We have further calculated the relaxation energy in these cases and used it to examine the interaction of the point defects with the (traction-free) substrate surface and the interaction of a single vacancy with a relatively large germanium cluster in the presence of the substrate surface. In the first case, the point defects are found to be attracted to the substrate surface. In the second case, the single vacancy is attracted to the germanium cluster as well as to the substrate surface.     

Coarse-grained atomistic simulation of dislocations

This paper presents a new methodology for coarse-grained atomistic simulation of dislocation dynamics. The methodology combines an atomistic formulation of balance equations and a modified finite element method employing rhombohedral-shaped 3D solid elements suitable for fcc crystals. With significantly less degrees of freedom than that of a fully atomistic model and without additional constitutive rules to govern dislocation activities, this new coarse-graining (CG) method is shown to be able to reproduce key phenomena of dislocation dynamics for fcc crystals, including dislocation nucleation and migration, formation of stacking faults and Lomer-Cottrell locks, and splitting of stacking faults, all comparable with fully resolved molecular dynamics simulations. Using a uniform coarse mesh, the CG method is then applied to simulate an initially dislocation-free submicron-sized thin Cu sheet. The results show that the CG simulation has captured the nucleation and migration of large number of dislocations, formation of multiple stacking fault ribbons, and the occurrence of complex dislocation phenomena such as dislocation annihilation, cutting, and passing through the stacking faults. The distinctions of this method from existing coarse-graining or multiscale methods and its potential applications and limitations are also discussed.     

Micro-plasticity of surface steps under adhesive contact: Part I—Surface yielding controlled by single-dislocation nucleation

Mechanics of nano- and meso-scale contacts of rough surfaces is of fundamental importance in understanding deformation and failure mechanisms of a solid surface, and in engineering fabrication and reliability of small surface structures. We present a micro-mechanical dislocation model of contact-induced deformation of a surface step or ledge, as a unit process model to construct a meso-scale model of plastic deformations near and at a rough surface. This paper (Part I) considers onset of contact-induced surface yielding controlled by single-dislocation nucleation from a surface step. The Stroh formalism of anisotropic elasticity and conservation integrals are used to evaluate the driving force on the dislocation. The driving force together with a dislocation nucleation criterion is used to construct a contact-strength map of a surface step in terms of contact pressure, step height, surface adhesion and lattice resistance. Atomistic simulations of atomic surface-step indentation on a gold (1 0 0) surface have been also carried out with the embedded atom method. As predicted by the continuum dislocation model, the atomistic simulations also indicate that surface adhesion plays a significant role in dislocation nucleation processes. Instabilities due to adhesion and dislocation nucleation are evident. The atomistic simulation is used to calibrate the continuum dislocation nucleation criterion, while the continuum dislocation modeling captures the dislocation energetics in the inhomogeneous stress field of the surface-step under contact loading. Results show that dislocations in certain slip planes can be easily nucleated but will stay in equilibrium positions very close to the surface step, while dislocations in some other slip planes easily move away from the surface into the bulk. This phenomenon is called contact-induced near-surface dislocation segregation. As a consequence, we predict the existence of a thin tensile-stress sub-layer adjacent to the surface within the boundary layer of near-surface plastic deformation. In the companion paper (Part II), we analyze the surface hardening behavior caused by multiple dislocations.     

Energy dissipation mechanisms in ductile fracture

The objective is to investigate energy dissipation mechanisms that operate at different length scales during fracture in ductile materials. A dimensional analysis is performed to identify the sets of dimensionless parameters which contribute to energy dissipation via dislocation-mediated plastic deformation at a crack tip. However, rather than using phenomenological variables such as yield stress and hardening modulus in the analysis, physical variables such as dislocation density, Burgers vector and Peierls stress are used. It is then shown via elementary arguments that the resulting dimensionless parameters can be interpreted in terms of competitions between various energy dissipation mechanisms at different length scales from the crack tip; the energy dissipations mechanisms are cleavage, crack tip dislocation nucleation and also dislocation nucleation from a Frank-Read source. Therefore, the material behavior is classified into three groups. The first two groups are the well-known intrinsic brittle and intrinsic ductile behavior. The third group is designated to be extrinsic ductile behavior for which Frank-Read dislocation nucleation is the initial energy dissipation mechanism. It is shown that a material is predicted to exhibit extrinsic ductility if the dimensionless parameter bρ_disl^1/2 (b is Burgers vector, ρ_disl is dislocation density) is within a certain range defined by other dimensionless parameters, irrespective of the competition between cleavage and crack tip dislocation nucleation. The predictions compare favorably to the documented behavior of a number of different classes of materials.