Polaronic effects on laser dressed donor impurities in a quantum well

The effect of laser field on the binding energy in a GaAs/Ga1_1−xAl_xAs quantum well within the single band effective mass-approximation is investigated. Exciton binding energy is calculated as a function of well width with the renormalization of the semiconductor gap and conduction valence effective masses. The calculation includes the laser dressing effects on both the impurity Coulomb potential and the confinement potential. The valence-band anisotropy is included in our theoretical model. The 2D Hartree–Fock spatial dielectric function and the polaronic effects have been employed in our calculations. We investigate that reduction of binding energy in a doped quantum well due to screening effect and the intense laser field leads to semiconductor–metal transition.     

Intersubband cyclotron resonance of holes in strained Ge/GeSi(111) heterostructures with germanium wide quantum wells and cyclotron resonance of 1<Emphasis Type="Italic">L</Emphasis> electrons in GeSi layers

The submillimeter (?ω=0.5–5 meV) magnetoabsorption spectra of strained Ge/Ge_1?xSi_x(111) multilayer heterostructures with thick Ge layers (d_Ge=300–850 Å, d_GeSi≈200 Å, x≈0.1) are investigated at T=4.2 K upon band-gap optical excitation. It is revealed that the absorption spectra contain cyclotron resonance lines of 1L electrons localized in GeSi solid solution layers (unlike the previously studied structures with thin Ge layers as quantum wells for 3L electrons). The absorption spectra of the samples with thick Ge layers (d_Ge=800–850 Å) exhibit cyclotron resonance lines of holes due to transitions from the lower Landau levels in the first quantum-well subband to the Landau levels belonging to the third and fifth higher subbands.     

A survey of band-gap renormalization in quantum well structures

The band-gap renormalization at finite temperatures in quantum wells is calculated from the dynamical self energy. Sublevel formfactors and non-diagonal screening are taken into account. In order to compare with these calculations, the chemical potential and the carrier density in the active layer of a quantum-well laser diode are determined experimentally based on a novel non-spectroscopic method.     

Galvanomagnetic study of the quantum-well valence band of germanium in the Ge<Subscript>1−x</Subscript>Si<Subscript>x</Subscript>/Ge/Ge<Subscript>1−x</Subscript>Si<Subscript>x</Subscript> potential well

The structure of the quantum-well valence band in a Ge(111) two-dimensional layer is calculated by the self-consistent method. It is shown that the effective mass characterizing the motion of holes along the germanium layer is almost one order of magnitude smaller than the mass for the motion of heavy holes along the [111] direction in a bulk material (this mass is responsible for the formation of quantum-well levels). This creates a unique situation in which a large number of subbands appear to be populated at moderate values of the layer thickness d _w and the hole concentration p _s . The depopulation of two or more upper subbands in a 38-nm-thick germanium layer at a hole concentration p _s = 5 × 10¹⁵ m^?2 is revealed from the results of measuring the magnetoresistance in a strong magnetic field aligned parallel to the germanium layers. The destruction of the quantum Hall state at a filling factor ν = 1 indicates that the two lower subbands merge together in a self-formed potential profile of the double quantum well. It is demonstrated that, in a quasi-two-dimensional hole gas, the latter effect should be sensitive to the layer strain.     

Coulomb effects in spatially separated electron and hole layers in coupled quantum wells

We report on the (magneto-) optical study of many-body effects in spatially separated electron and hole layers in GaAs/Al_xGa_1?x As coupled quantum wells (CQWs) at low temperatures (T = 1.4 K) for a broad range of electron-hole (e-h) densities. Coulomb effects were found to result in an enhancement of the indirect (interwell) photoluminescence (PL) energy with increasing the e-h density both for a zero magnetic field and at high fields for all Landau level transitions; this is in contrast to the electron-hole systems in single QWs where the main features are explained by the band-gap renormalization resulting in a reduction of the PL energy. The observed enhancement of the ground state energy of the system of the spatially separated electron and hole layers with increasing the e-h density indicates that the real space condensation to droplets is energetically unfavorable. At high densities of separated electrons and holes, a new direct (intrawell) PL line has been observed: its relative intensity increased both in PL and in absorption (measured by indirect PL excitation) with increasing density; its energy separation from the direct exciton line fits well to the X ^? and X ⁺ binding energies previously measured in single QWs. The line is therefore attributed to direct multiparticle complexes.     

Magneto-optics of strongly correlated two-dimensional electrons in single heterojunctions

Investigations of two-dimensional (2D) electron systems in semiconductors subjected to a strong perpendicular magnetic field with the use of photoluminescence are reviewed. The foundation of the optical spectroscopy method using the radiative recombination of 2D electrons with photoexcited holes bound to acceptors in a δ-doped monolayer in GaAs/Al _x Ga_1-x As single heterojunctions is presented. Optical spectroscopy studies of the energy spectra of 2D electrons imposed on transverse magnetic fields in the regimes of the integer and fractional quantum Hall effects are discussed. The relationship between the mean energy of the 2D electron gas and the first moment of their radiative recombination is analysed. It is shown that the magnetic field dependence of the first moment provides a method to measure the cyclotron, enhanced spin and quasiparticle energy gaps at the same time. Therefore it is shown how magneto-optics ‘see’ the ground state of interacting 2D electrons in the extreme quantum limit and how an optical ‘tool’ is efficient for the determination of Coulomb gaps of incompressible Fermi fluids in the fractional quantum Hall effect. Finally optical observations and studies of the Wigner crystallization of 2D electrons are presented. The corresponding liquid-solid phase diagram is discussed.     

Simplified calculations of band-gap renormalization in quantum-wells

Non-linear optical properties of photoexcited semiconductor quantum-wells are of interest because of their opto-electronic device application possibilities. Many-body interactions of the optically created electrons and holes lead to the band-gap renormalization which in turn determines the absorption spectra of such systems. We employ a simplified approach to calculate the band-gap renormalization in quantum-well systems by considering the interaction of a single electron-hole pair with the collective excitations (plasmons). This method neglects the exchange-correlation effects but fully accounts for the Coulomb-hole term in the single-particle self-energy. We demonstrate that the density, temperature, and well-width dependence of the band-gap renormalization for GaAs quantum-wells within our model is in good agreement with the experimental results.     

LO-phonon confinement effects on the polaron properties in semiconductor quantum-well heterostructures

Polaronic corrections are calculated for a semiconductor quantum-well heterostructure at T = 0 K. Electron coupling with confined LO-phonons is assumed on the basis of an electron-LO-phonon model Hamiltonian deduced in a previous work. Screening is ignored during the calculations, a parabolic band structure is supposed and the case of completely confined electrons with infinite potential barriers at the interfaces is considered. Finite values for the electron self-energies are obtained. Dependence of polaronic corrections on the quantum-well parameters is discussed in detail and comparison with other works on the subject is made. Good agreement with experimental data is found for the case of a GaAs-Al_xGa_1−xAs quantum well.     

Hot electrons and phonons in quantum-well AlxGa1-xAs-GaAs heterostructures

Formulas are presented to calculate the heating of charge carriers and the generation of nonequilibrium phonons by intense photoexcitation of quantum-well heterostructures. It is shown that the deviations from thermal equilibrium are more pronounced for quasi-two-dimensional structures than for bulk material. Supporting experimental data are given on an MO-CVD Al_xGa_1-xAs-GaAs heterostructure consisting of a large GaAs quantum well (L_z ～ 200 Å) coupled to a phonon-generating array of seven small GaAs quantum wells (L_z ～ 50 Å).     

On the possibility of a flare-up of discrete exciton absorption structure in n-CdxHg1−xTe crystals in a magnetic field

A discrete absorption peak with an exciton-like behavior was observed to flare up in Cd_xHg_1?xTe with x≈0.3 when a magnetic field H was applied. Its diamagnetic shift, which is replaced at high H by a close-to-linear relationship typical for diamagnetic exciton spectroscopy, and the splitting permit one to evaluate ?_g=0.2579±0.0001 eV and to calculate the band parameters of the material. Evaluation of the fluctuation potential well depth for the electrons and holes suggests, however, a high probability of exciton trapping at potential wells at H = 0 and x ≈ 0.3. Application of a magnetic field above 40 k0e can break the Coulomb bond between the electron and the hole, whereas at lower fields the existence of excitons is possible.     

Electric-field-induced energy spectra and dispersions of ZnO/MgxZn1−xO MQWs

The energy spectra and dispersion relations of carriers in the presence of an electric field applied along the growth direction in ZnO/Mg_xZn_1−xO multiple quantum wells (MQW) are calculated using the asymptotic transfer method (ATM) on the basis of the quasistationary state approximation. The energy spectra of the carriers induce some quasi-bound levels under electric fields. The dispersion relations for the energy of the ground state and lower excitation states still have parabolic shapes for both the electrons and the heavy holes in the presence of a moderate electric field. Our results also reveal that the number of energy levels increases with increasing number of ZnO quantum wells and that the energies increase with both increasing Mg composition x and electric field strength.     

Photoconductivity of Si/Ge/SiO<Subscript>x</Subscript> and Si/Ge/Si structures with germanium quantum dots

A nonmonotonic dependence of the lateral photoconductivity (PC) on the interband light intensity is observed in Si/Ge/Si and Si/Ge/SiO_x structures with self-organized germanium quantum dots (QDs): in addition to a stepped increase in PC, a stepped decrease in PC is also observed. The effect of temperature and drive field on these features of the PC for both types of structures with a maximum nominal thickness of the Ge layer (N_Ge) is studied. The results obtained are discussed in the context of percolation theory for nonequilibrium carriers localized in different regions of the structure: electrons in the silicon matrix and holes in QDs.     

Application of coordinate transformation and finite differences method for electron and hole states calculations

In this work we are particularly interested for GaAs/Ga_1−xAl_xAs V-groove quantum wires. The paper presents an efficient and simple method for energy spectra and wave function calculations of electrons and holes in V-groove quantum wires. The method is based on the coordinate transformation of the V-groove quantum wire structure and the computational domain using a function proposed by Inoshita. Then, the Hamiltonian followed by implementation of the FDM (Finite Difference Method) in the new computational space leads to an eigenvalues problem resolved using specialized LAPACK’s routines. The influence of the parameters introduced in the mathematical function, is studied on the energy levels of electrons and holes as well as the oscillator strengths.     

Hopping photoconduction and its long-time kinetics in a heterosystem with Ge quantum dots in Si

The effect of interband-transition-inducing illumination on the hole hopping conduction along a two-dimensional array of Ge quantum dots in Si was studied. It is found that the photoconductance has either positive or negative sign depending on the initial filling of quantum dots with holes. In the course of illumination and after switching off the light, long-time photoconduction kinetics was observed (10²?10⁴s at T=4.2 K). The results are discussed in terms of a model based on the spatial separation of nonequilibrium electrons and holes in a potential relief formed by positively charged dots. The effect of equalization of potential barrier heights as a result of photohole capture by the charged quantum dots during the process of illumination and relaxation is suggested as an additional factor for explaining the phenomenon of persistent conduction.     

Energy levels of single nonabrupt GaAs/AlxGa1-xAs quantum wells

Energy levels of electrons in nonabrupt GaAs/Al_xGa_1-xAs single quantum wells are calculated with and beyond the constant interfacial effective mass approximation (CIEMA), and compared with those of abrupt GaAs/Al_xGa_1-xAs quantum wells. For a given interface width, the energy levels calculated with the CIEMA are higher than those calculated beyond it, but both are higher than those of the abrupt semiconductor quantum well. The shifts of the energy levels increase with the interfacial width of the nonabrupt quantum well, as well as with the degree of interfacial asymmetry.     

Elementary excitations in multiple quantum wire structures

We calculate the plasmon dispersion of electrons in multiple quantum wire structures. Wave function overlapping effects between different wires are neglected. The Coulomb interaction potential is calculated for a model with circular wire area. Analytical results for the excitation spectrum of electron multiple quantum wire structures are obtained within an one-subband model. Landau damping of intrasubband plasmons is discussed. Results for an electron superlattice within a two-subband model are presented and the coupling of intersubband plasmons with intrasubband plasmons is calculated. We compare the theoretical results with recent Raman measurements of intrasubband plasmons in Al _x Ga_1–x As/GaAs wire superlattices. The plasmon dispersion for boson multiple quantum wire structures also is calculated.     

Two-dimensional electron-hole liquid in single Si quantum wells with large electronic and dielectric confinement

We report a luminescence study of the electronic properties of the 2D electron-hole liquid in crystalline Si quantum wells with SiO2 dielectric barriers. The Fermi-Dirac condensation of e-h pairs into a metallic liquid is strongly enhanced by spatial localization. We present experimental evidence for the formation of liquid nanodroplets, with size increasing with e-h pair density. The quantum confined regime is observed for well width below 15 nm. The data are analyzed in a confinement model that takes account of the band-gap renormalization by 2D many-body effects and the increase of the Coulomb interactions due to the dielectric mismatch between the Si well and the SiO2 barriers.     

Short-range order,large-scale potential fluctuations,and photoluminescence in amorphous SiN<Subscript>x</Subscript>

The short-range order and electron structure of amorphous silicon nitride SiN_x (x<4/3) have been studied by a combination of methods including high-resolution X-ray photoelectron spectroscopy. Neither random bonding nor random mixture models can adequately describe the structure of this compound. An intermediate model is proposed, which assumes giant potential fluctuations for electrons and holes, caused by inhomogeneities in the local chemical composition. The characteristic scale of these fluctuations for both electrons and holes is about 1.5 eV. The photoluminescence in SiN_x is interpreted in terms of the optical transitions between quantum states of amorphous silicon clusters.     

Multicomponent Electron–Hole Liquid in Si/SiGe Quantum Wells

The density functional theory is used to calculate the energy of an electron–hole liquid in Si/Si_1–xGe_x/Si quantum wells. Three one-dimensional nonlinear Schrödinger equations for electrons and light and heavy holes are solved numerically. It is shown that, in shallow quantum wells (small x), both light and heavy holes exist in the electron–hole liquid. Upon an increase in the Ge content, a transition to a state with one type of holes occurs, with the equilibrium density of electron–hole pairs decreasing by more than a factor of 2.