UV laser desorption of nitric oxide from semiconducting C<Subscript>60</Subscript>/Cu(111)

The desorption of NO from a well-characterized, epitaxially grown semiconducting C₆₀ surface is reported. Two different channels are identified in the laser desorption. Both channels yield a comparably high desorption cross section of σ₁=7.0×10^-17 cm² and σ₂=5.5×10^-17 cm² for the first and second channel, respectively. The laser desorbed NO molecules are detected with rovibrational state selectivity by (1+1) REMPI in the -bands. In the first channel the desorbing molecules are highly excited with an average kinetic energy of 〈E_kin〉=174 meV. The rotational population distribution can be fitted by a rotational temperature of T_rot=800 K. A rotational–translational coupling is observed, with velocities ranging from 1000 m/s for low to 1300 m/s for high rotational states. The vibrationally excited population is estimated to be less than 1% of the ground state. The second channel yields less excited molecules and an almost Boltzmann distributed rotational population with a temperature of T_rot=280 K. The apparent velocity distribution derived from the pump-probe delay yields molecules much too slow to be explained by even a thermal desorption. This desorption is probably caused by a long-lived electronic excitation in the substrate for which a lifetime of τ≈160 μs is estimated. PACS 42.62.Fi; 34.50.Dy; 68.49.Df; 68.43.Tj; 79.20.La     

Adsorption of iso-butane on ZnO(0 0 0 1)-Zn

Presented are thermal desorption spectroscopy (TDS) and adsorption probability measurements of iso-butane on the Zn-terminated surface of ZnO. The initial adsorption probability, S₀, decreases linearly from 0.57 to 0.22 (±0.02) with impact energy, E_i = 0.74-1.92 eV, and is independent of adsorption temperature, T_s = 91-114 K (±5 K), indicating non-activated molecular adsorption. The coverage, Θ, dependent adsorption probabilities, S(Θ), show a cross-over from adsorbate-assisted adsorption (S increases with Θ) to Kisliuk-like dynamics at about the desorption temperature of iso-butane bi-layers (∼110 K). Thus, the adsorption dynamics are precursor-mediated. The enhanced (gas-surface) mass-match, caused by forming a second layer of the alkane, leads to adsorbate-assisted adsorption. A direct fitting procedure of the TDS data yields a pre-exponential factor of 2.5 × 10¹³/s and a coverage dependent heat of adsorption of E_d(Θ) = 39 − 6 ∗ Θ + 2.5 ∗ exp(−Θ/0.07) kJ/mol.     

A novel demonstration of photoacoustic Raman spectroscopy with combined stimulated Raman pumping in H2 molecule

We present the experimental demonstration of a novel, efficient, and vibrational selective technique to prepare population in vibrational level v″ = 1 using the stimulated Raman pumping. Photoacoustic Raman signal has been studied in non-radiative transitions in the molecule H₂ (v″ = 0) and (v″ = 1). The population fraction in the v″ = 1 level can be estimated by using combined photoacoustic Raman spectroscopy with stimulated Raman pumping for the first time.     

On the mechanism of decomposition of the benzyl radical

The C₇H₇ potential energy surface was studied from first principles to determine the benzyl radical decomposition mechanism. The investigated high temperature reaction pathway involves 15 accessible energy wells connected by 25 transition states. The analysis of the potential energy surface, performed determining kinetic constants of each elementary reaction using conventional transition state theory, evidenced that the reaction mechanism has as rate determining step the isomerization of the 1,3-cyclopentadiene, 5-vinyl radical to the 2-cyclopentene,5-ethenylidene radical and that the fastest reaction channel is dissociation to fulvenallene and hydrogen. This is in agreement with the literature evidences reporting that benzyl decomposes to hydrogen and a C₇H₆ species. The benzyl high-pressure decomposition rate constant estimated assuming equilibrium between the rate determining step transition state and benzyl is k₁(T) = 1.44 × 10¹³T^0.453exp(−38400/T) s⁻¹, in good agreement with the literature data. As fulvenallene reactivity is mostly unknown, we investigated its reaction with hydrogen, which has been proposed in the literature as a possible decomposition route. The reaction proceeds fast both backward to form again benzyl and, if hydrogen adds to allene, forward toward the decomposition into the cyclopentadienyl radical and acetylene with high-pressure kinetic constants k₂(T) = 8.82 × 10⁸T^1.20exp(1016/T) and k₃(T) = 1.06 × 10⁸T^1.35exp(1716/T) cm³/mol/s, respectively. The computed rate constants were then inserted in a detailed kinetic mechanism and used to simulate shock tube literature experiments.     

The laser-induced fluorescence study of AΣ-XΠi band system of CuS

The laser-induced fluorescence excitation spectra of jet-cooled CuS molecules have been recorded in the energy range of 17 200-19 500 cm⁻¹. Fourteen observed vibronic bands have been assigned as three transition progressions: A²Σ⁻ (v′ = 0-4)-X²Π_3/2 (v″ = 0), A²Σ⁻ (v′ = 0-4)-X²Π_3/2 (v″ = 1), and A²Σ⁻ (v′ = 0-3)-X²Π_1/2 (v″ = 0). Spectroscopic constants of both the X²Π ground state and the A²Σ⁻ excited state of ⁶³CuS and ⁶⁵CuS were determined by analyzing their rotationally resolved spectra. Furthermore, the lifetimes of most observed bands were measured for the first time.     

Direct observation of the D′ 2g(P2)-A′ Π(2u) system for Cl2 by laser induced fluorescence spectroscopy: Determination of the absolute position of the A′ state

In a discharged supersonic jet of Cl₂, transitions of the D′ 2_g(³P₂)-A′ ³Π(2_u) system for ³⁵Cl₂ were observed directly by laser induced fluorescence spectroscopy. By a discharge in Cl₂, the Cl₂ molecules were populated into the A′ state, which is a metastable and optically forbidden state, from the state. An ultraviolet laser radiation excites the molecules to the D′ ion-pair state. A set of Dunham parameters for the A′ state is determined from a global least-squares fitting for 59 vibronic bands with v″ = 0-7. In the fitting, the previously reported data, T(v) and B(v) for the v = 14 and 15 bands of the A′ state [T. Ishiwata, A. Ishiguro, K. Obi, J. Mol. Spectrosc. 147 (1991) 300-320], were included. Y₀₀ = 57295.723(5) cm⁻¹ of the D′ state [J.-H. Si, T. Ishiwata, K. Obi, J. Mol. Spectrosc. 147 (1991) 334-345] was also included in the global fitting in order to determine the absolute position of the A′ state. The determined parameters of the A′ state are Y₀₀ = 17171.506(14), Y₁₀ = 255.915(85), Y₂₀ = −4.465(70), Y₃₀ = −8.7(23) × 10⁻², Y₄₀ = 6.3(35) × 10⁻³, Y₅₀ = −4.9(26) × 10⁻⁴, Y₆₀ = 1.43(69) × 10⁻⁵, Y₀₁ = 0.16282(15), Y₁₁ = −2.363(68) × 10⁻³, Y₂₁ = −5.01(93) × 10⁻⁵, and Y₃₁ = −3.01(36) × 10⁻⁶ (in cm⁻¹ and one standard deviations of the fit in parentheses). The absolute position of the A′ state is determined with good accuracy.     

CO2 adsorption on Cr(1 1 0) and Cr2O3(0 0 0 1)/Cr(1 1 0)

We attempt to correlate qualitatively the surface structure with the chemical activity for a metal surface, Cr(1 1 0), and one of its surface oxides, Cr₂O₃(0 0 0 1)/Cr(1 1 0). The kinetics and dynamics of CO₂ adsorption have been studied by low energy electron diffraction (LEED), Aug er electron spectroscopy (AES), and thermal desorption spectroscopy (TDS), as well as adsorption probability measurements conducted for impact energies of E_i = 0.1-1.1 eV and adsorption temperatures of T_s = 92-135 K. The Cr(1 1 0) surface is characterized by a square shaped LEED pattern, contamination free Cr AES, and a single dominant TDS peak (binding energy E_d = 33.3 kJ/mol, first order pre-exponential 1 × 10¹³ s⁻¹). The oxide exhibits a hexagonal shaped LEED pattern, Cr AES with an additional O-line, and two TDS peaks (E_d = 39.5 and 30.5 kJ/mol). The initial adsorption probability, S₀, is independent of T_s for both systems and decreases exponentially from 0.69 to 0.22 for Cr(1 1 0) with increasing E_i, with S₀ smaller by ∼0.15 for the surface oxide. The coverage dependence of the adsorption probability, S(Θ), at low E_i is approx. independent of coverage (Kisliuk-shape) and increases initially at large E_i with coverage (adsorbate-assisted adsorption). CO₂ physisorbs on both systems and the adsorption is non-activated and precursor mediated. Monte Carlo simulations (MCS) have been used to parameterize the beam scattering data. The coverage dependence of E_d has been obtained by means of a Redhead analysis of the TDS curves.     

Doppler-limited spectroscopy of the AΠ1 ← XΣ system of ICl in the 0.8 μm region using a Ti:sapphire ring laser

Doppler-limited vib-rotational absorption spectra of the A ← X electronic transition of I^35/37Cl are measured in the range 11,352-13,507 cm⁻¹ using a Ti:sapphire ring laser. The P-, Q-, and R-branch lines belonging to the v ← v″ = (0-7) ← (0-7) transition in I³⁵Cl and the v ← v″ = (0-6) ← (2-6) transition in I³⁷Cl are assigned. Under Doppler-limited conditions, the P- and R-branch lines are split into doublets by the nuclear quadrupole coupling effect of the I atom. The unperturbed positions of these lines are correctly calculated, whereas splitting in the Q-branch lines was not observed. The mass-reduced Dunham expansion coefficients U_l,m of the A and X states and the spectroscopic constants , and H_v^′ of the A state are determined using a global least-squares fitting procedure.     

Decomposition of thin titanium deuteride films; thermal desorption kinetics studies combined with microstructure analysis

The thermal evolution of deuterium from thin titanium films, prepared under UHV conditions and deuterated in situ at room temperature, has been studied by means of thermal desorption mass spectrometry (TDMS) and a combination of scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). The observed Ti film thickness dependent morphology was found to play a crucial role in the titanium deuteride (TiD_y) film formation and its decomposition at elevated temperatures. TDMS heating induced decomposition of fine-grained thin Ti films, of 10-20 nm thickness, proceeds at low temperature (maximum peak temperature T_m about 500 K) and its kinetics is dominated by a low energy desorption (E_D = 0.61 eV) of deuterium from surface and subsurface areas of the Ti film. The origin of this process is discussed as an intermediate decomposition state towards recombinative desorption of molecular deuterium. The TiD_y bulk phase decomposition becomes dominant in the kinetics of deuterium evolution from thicker TiD_y films. The dominant TDMS peak at approx. T_m = 670 K, attributed to this process, is characterized by E_D = 1.49 eV.     

Dipole relaxation and proton transport in polycrystalline γ-cyclodextrin hydrate: A dielectric spectroscopy study

The polycrystalline γ-cyclodextrin hydrate (γ-CD·12.2H₂O) has been investigated via dielectric spectroscopy over a frequency range of 0-100 kHz and the temperature ranges of 108.0-298.5 K (cooling) and 109.0-433.0 K (heating). At T < 250.0 K, the electrical properties of the sample accept a great contribution from the flip-flop proton orientational disorder and a much lesser one from the positional fluctuations of the water molecules. Moreover, a strong synergy is observed between the stability of the γ-CD molecules and the dynamic disorder of the infinite flip-flop chains. This type of disorder disappears upon cooling (T_trans = 186.7 K) and reappears upon heating (T_trans = 194.5 K). At T > 250.0 K, the dielectric permittivity ε′ and loss ε″ increase abruptly due to the proton dc-conductance of γ-CD·12.2H₂O which has been interpreted in terms of a theoretical model (Pnevmatikos, 1988) being consistent with the generation of ionic defects and their combination with the dipole reorientations in a collective motion of soliton-type. The influence of the simultaneous dehydration process on this charge transport mechanism relies on the very sensitive balance between the diffusive motion of water molecules (exchange between symmetry related positions) and their removal from the crystal lattice. The Arrhenius semiconductive behavior of the ac-conductivity in the ranges of 257.1-313.2 K (E_a = 0.42 eV) and 331.2-385.1 K (E_a = 0.39 eV) implies the dominance of water diffusion which conserves the structural integrity of the endless hydrogen-bonded chains and the proton transfer along them. The limited decrease of the ac-conductivity from 313.2 to 331.2 K along with its rapid decrease above 385.1 K, indicates that the removal of the water molecules rules out their diffusive motion. The Cole-Cole diagrams (ε″ vs. ε′) make clear that during the heating process the grain boundary polarization gradually becomes more significant than the grain interior one. In the range of 348.0-385.1 K, the constrictive grain boundary resistances are totally eliminated allowing the extensive proton transport through the grains of the polycrystalline specimen.     

The effect of ferroelectric polarization on the interaction of water and methanol with the surface of LiNbO3(0 0 0 1)

Water and methanol temperature programmed desorption (TPD) measurements were performed on the positive (c⁺) and negative (c⁻) surfaces of poled ferroelectric lithium niobate (LiNbO₃) single crystals. The results indicate that the molecule-surface interactions are both coverage and polarization-dependent. From a comparison of the TPD spectra for the positive and negative surfaces, it is shown that the desorption temperatures of water and methanol are consistently lower on the negative surface by 15 K and 20 K, respectively. The TPD spectra were simulated using the Polanyi-Wigner equation with a coverage-dependent energy term. These calculations show that the polarization dependence of the desorption temperature is due to a difference in the zero-coverage desorption energies on the two surfaces equal to a few kJ per mole. The mechanism for the polarization effect is explored with in situ pyroelectric voltage measurements, which indicate that a surface voltage of ±2 mV develops in the LiNbO₃(0 0 0 1) samples during TPD measurements. The magnitude of the pyroelectric-induced surface charge is heating rate dependent.     

Electron hopping mechanism in hematite (α-Fe2O3)

The frequency dependence of the real (?′) and imaginary (?″) parts of the dielectric constant of polycrystalline hematite (α-Fe₂O₃) has been investigated in the frequency range 0-100 kHz and the temperature range 190-350 K, in order to reveal experimentally the electron hopping mechanism that takes place during the Morin transition of spin-flip process. The dielectric behaviour is described well by the Debye-type relaxation (α-dispersion) in the temperature regions T<233 K and T>338 K. In the intermediate temperature range 233 K<T<338 K a charge carrier mechanism takes place (electron jump from the O²⁻ ion into one of the magnetic ions Fe³⁺) which gives rise to the low frequency conductivity and to the Ω-dispersion. The temperature dependence of relaxation time (τ) in the −ln τ vs 10³/T plot shows two linear regions. In the first, T<238 K, τ increases with increasing T implying a negative activation energy −0.01 eV, and in the second region T>318 K τ decreases as the temperature increases implying a positive activation energy 0.12 eV. The total reorganization energy (0.12-0.01) 0.11 eV is in agreement with the adiabatic activation energy 0.11 eV given by an ab initio model in the literature. The temperature dependence of the phase shift in the frequencies 1, 5, 10 kHz applied shows clearly an average Morin temperature T_Mo=284±1 K that is higher than the value of 263 K corresponding to a single crystal due to the size and shape of material grains.     

Transient differential reflectivity of ferromagnetic and paramagnetic phases in the bilayered manganite La1.24Sr1.76Mn2O7

Photoinduced effects in a single crystal of bilayered manganites, La_2−2xSr_1+2xMn₂O₇ (x=0.38), were investigated in a wide range of temperatures by pump-probe measurement at a photon energy of 1.6 eV. In a ferromagnetic metallic state, significant enhancement of positive rise in differential reflectivity with a slow relaxing time of 100 ps was observed just below T_C=127 K, indicating that the reflectivity change with the slow relaxation time constant is induced by laser heating. We have also observed an unconventional fast relaxing component that has a time constant of the order of 10 ps. This fast relaxing component, whose absolute value has an asymmetric peak at T_C, is presumably due to short-range correlation of Jahn-Teller distortion.     

Annealing effect on CdS/SnO2 films grown by chemical bath deposition

The extensive investigation of the annealing effect in nitrogen atmosphere on the structural optical and electrical properties of chemically deposited CdS films on SnO₂ has been performed. The as-deposited film shows 2.45 eV band gap (E_g) and decreases with increasing annealing temperature. The film annealed at 623 K having pure hexagonal phase (a = 4.14 Å, c = 6.71 Å for [1 0 0] plane) and E_g = 2.36 eV shows 10 times higher conductivity for all temperature range, and shows two different activation energies E_a = 0.114 eV and E_a = 0.033 eV for the temperature range 395 K ≤ T ≤ 515 K and 515 K ≤ T ≤ 585 K, respectively. The structural parameters such as dislocation density, strain and optical parameters such as absorption and extinction coefficient are calculated and compared for all the films.     

Ab initio study of phase stability,thermodynamic and elastic properties of C3N2 derived from cubic C20

In this work, we report a quite different conclusion from Tian et al. [Phys. Rev. B 78 (2008) 235431]. It is proved that β-C₃N₂ is the only phase under high pressure, and α-C₃N₂ does not exist. β-C₃N₂ is a covalent crystal composed of strong CC and CN covalent bonds. Band gap of β-C₃N₂ increases with pressure. The width of antibonding state, shown in partial density of states (PDOS), keeps about 5 eV with rising pressures, which brings stable CN or CC covalent bonds. At sufficiently low temperatures, heat capacity (C_v) is proportional to T³; and at intermediate temperatures, C_v is governed by the details of vibrations of the atoms; finally, C_v reaches to β-C₃N₂'s Dulong–Pettit limit (about 120 J/mol K). Though thermal expansion coefficient (α) increases with temperature, α is less than 1×10⁻⁵ K⁻¹. Elastic constants rise with pressure, but shear moduli is quite steady which increases just a little with pressures.     

Optical characterization of fourfold (Td)- and sixfold (Oh)-transition-metal species in MgAl2O4:Co by time-resolved spectroscopy

This work investigates the origin of novel visible photoluminescence (PL) bands observed in the spinel MgAl₂O₄:Co²⁺. Besides the well-known fourfold-coordinated Co²⁺(T_d) PL at 670 nm [N.V. Kuleshov, V.P. Mikhailov, V.G. Scherbitsky, P.V. Prokoshin and K.V. Yumashev, J. Lumin. 55 (1993) 265.], a rich structured PL band at 686 nm was also observed that we associate with uncontrolled impurities of sixfold coordinated Cr³⁺(O_h) by time-resolved spectroscopy and lifetime measurements and their variation with temperature. We also show that the lifetime of the Co²⁺(T_d) emission at 670 nm varies from τ=6.7 μs to 780 ns on passing from T=10 to 290 K. This unexpected behaviour for T_d systems is related to the excited-state crossover (⁴T₁↔²E), making the emission band to transform from a narrow-like emission from ²E at low temperature to a broad structureless band from ⁴T₁ at room temperature.     

Structural and ac electrical properties of a newly synthesized single phase rare earth double perovskite oxide: Ba2CeNbO6

A single phase rare earth double perovskite oxide Ba₂CeNbO₆ (BCN) is synthesized by solid-state reaction technique for the first time. The X-ray diffraction pattern of the sample at room temperature shows monoclinic structure, with the lattice parameters, a=5.9763 Å, b=5.975 Å and c=8.48 Å and β=90.04°. Impedance spectroscopy is used to study the ac electrical behavior of this material as a function of frequency (10²-10⁶ Hz) at various temperatures (30-450 °C). A relaxation is observed in the entire temperature range. Conduction mechanism is investigated by fitting the complex impedance data to Cole-Cole equation. Complex impedance plane plots show only one semicircular arc, indicating only the grain contribution of dielectric relaxation. The scaling behavior of imaginary part of electric modulus (M″) and imaginary part of electrical impedance (Z″) suggests that the relaxation describes the same mechanism at various temperatures. The frequency dependence of conductivity is interpreted in terms of the jump relaxation model and is fitted to Jonscher's power law. The values of dc conductivities extracted from the Jonscher power law varies from 2.79×10⁻⁷ to 3.5×10⁻⁵ Sm⁻¹ with the increase in temperature from 100 to 450 °C. The activation energies (0.37 eV) extracted from M″(ω) and Z″(ω) peaks are found to follow the Arrhenius law.     

Influence of laser power on the orientation and microstructure of CeO2 films deposited on Hastelloy C276 tapes by laser chemical vapor deposition

CeO₂ films were prepared on LaMnO₃/MgO/Gd₂Zr₂O₇ multi-coated Hastelloy C276 tapes by laser chemical vapor deposition at different laser power (P_L) from 46 to 101 W. Epitaxial (1 0 0) CeO₂ films were prepared at P_L = 46-93 W (deposition temperature, T_dep = 705-792 K). Epitaxial CeO₂ films had rectangular-shaped grains at P_L = 46-77 W (T_dep = 705-754 K), while square-shaped grains were obtained at P_L = 85-93 W (T_dep = 769-792 K). CeO₂ films showed a columnar microstructure. Epitaxial (1 0 0) CeO₂ films with rectangular grains exhibited full width at half maximum of ω-scan on (2 0 0) reflection and ?-scan on (2 2 0) reflection of 3.4-3.2° and 6.0-7.2°, respectively. The deposition rate of the epitaxial (1 0 0) CeO₂ films had a maximum of 4.6 μm h⁻¹ at P_L = 77 W (T_dep = 754 K).     

Electronic conductivity of pure ceria

The electronic conductivity of pure ceria with two different impurity levels is examined by dc polarization technique based on the Hebb-Wagner ion blocking method. The impurity level for the ceria with 99.999% purity (5N-CeO₂) is about 1/100 of that with 99.9% purity (3N-CeO₂) as confirmed by the fluorescence intensity of impurities obtained by Raman spectroscopy. The electronic conductivity for the 5N-CeO₂ was measured at T = 973 K to 1173 K, and the results are essentially the same as those for the 3N-CeO₂. The electronic conductivity increases with decreasing of P(O₂) following slope values of − 1/4 to − 1/6. The − 1/4 dependent region becomes narrower for the 5N-CeO₂ than that for the 3N-CeO₂. For both types of ceria, the P(O₂) independent region appears in the same region of higher than 10^− 2 and 10^− 3 MPa at T = 1073 K and 973 K, respectively. Activation energies for the 5N-CeO₂ were 2.2 eV, 2.6 eV and 1.9 eV in P(O₂) dependent regions of − 1/6, − 1/4 and 0, respectively.