Low-field AC susceptibility in Pr1−xHoxMn2Ge2

We report the structure and magnetic properties of Pr_1−xHo_xMn₂Ge₂ (0.0≤x≤1.0) germanides by means of X-ray diffraction (XRD), differential scanning calorimetry (DSC) techniques and AC magnetic susceptibility measurements. All compounds crystallize in the ThCr₂Si₂-type structure with the space group I4/mmm. Substitution of Ho for Pr leads to a linear decrease in the lattice constants and the unit cell volume. The samples with x=0 and x=0.8 have spin reorientation temperature. The results are collected in a phase diagram.     

Low field AC susceptibility study of intergranular critical current density in Mg-substituted CuBa2Ca3Cu4O12−y high temperature superconductors

Measurements of the a.c.susceptibility (χ=χ′+iχ″) have been made on the Mg substituted high T_C superconducting system, CuBa₂(Mg_xCa_1−x)₃Cu₄O_12−y (Cu-1234) with x=0, 0.10 & 0.20, at different values of the a.c.field amplitude. Estimates of the intergranular critical current density(J_C) made from the field dependent χ″-T curves show an improvement in the Mg-substituted Cu-1234 system. Results have been analysed in the light of the crystal structure and the superconducting anisotropy factor (γ=ξ_ab/ξ_c) of the Cu-1234 system. Lower superconducting anisotropy emanating from Mg substitution has been found to be significant, resulting in better superconducting properties.     

Correlated vortex pinning in Si-nanoparticle doped MgB2

The magnetoresistivity and critical current density of well characterized Si-nanoparticle doped and undoped Cu-sheathed MgB₂ tapes have been measured at temperatures T≥28 K in magnetic fields B≤0.9 T. The irreversibility line B_irr(T) for doped tape shows a stepwise variation with a kink around 0.3 T. Such B_irr(T) variation is typical for high-temperature superconductors with columnar defects (a kink occurs near the matching field B_?) and is very different from a smooth B_irr(T) variation in undoped MgB₂ samples. The microstructure studies of nanoparticle doped MgB₂ samples show uniformly dispersed nanoprecipitates, which probably act as a correlated disorder. The observed difference between the field variations of the critical current density and pinning force density of the doped and undoped tape supports the above findings.     

Domain observation and transition from giant magnetoresistance to anisotropy magnetoresistance in Ag1−x(Ni0.8Co0.2)x granular films

A series of Ag_1−x(Ni_0.8Co_0.2)_x granular film samples were prepared using an ion-beam cosputtering technique. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were performed to investigate the microstructure of these samples. The results measured using a vibrating sample magnetometer (VSM) show a gradual change from superparamagnetism to ferromagnetism as x increases in these samples. Magnetoresistance was measured using a conventional four terminal method at room temperature. As x increases, a transition from giant magnetoresistance (GMR) to anisotropic magnetoresistance (AMR) has been observed. The stripe-type domains have been observed using magnetic force microscopy (MFM) in the high x samples, and the domains gradually disappear as x decreases. It suggests that the transition from GMR to AMR may result from intergranular interaction (not only dipolar) in the samples as x increases.     

Magnetic dimensionality of Y(2−x)DyxBaCuO5

In this communication, we report the effect that doping Y₂BaCuO₅ with Dy has on its two-dimensional (2D) magnetic structure. Pure samples at both ends of the series, as well as samples doped with 1, 5, 10 and 25% dysprosium, have been characterised using X-ray diffraction, and AC susceptibility together with neutron diffraction studies on the 1 and 5% samples, which were used to measure the magnetic ordering at low temperatures. The results show that 1% Dy is enough to disrupt the 2D magnetic ordering turning it into a 3D array. The low dysprosium concentration indicates that the 3D ordering is achieved without the existence of a rare earth magnetic sublattice. The change in the ordering temperature from 27 K for the pure Y₂BaCuO₅ to 16 K for the 1 and 5% Dy compounds, together with the parameters from the AC susceptibility fittings, reveal that the effect of the Dy doping affects the electronic structure of the Cu ions that become involved in the superexchange pathways. The discrepancy between the parameters obtained by the Curie-Weiss fittings of the real part of the AC susceptibility and the neutron diffraction results, shows that the exchange mechanism deviates from the mean field model for all dysprosium concentrations.     

Spin-glass-like phase behaviour in CeNi2−xCuxSn2

We report the results of our investigation in CeNi_2−xCu_xSn₂ (x=0, 0.4, 1.0, 1.6 and 2.0), a new pseudoternary series with CaBe₂Ge₂-type tetragonal structure. Substitution of Cu for Ni leads to a linear increase in the constants a, c and the unit cell volume v. As probed by the low temperature dependence of ac susceptibility χ_ac(T), the T_f temperature, which corresponds to the freezing temperature of the spin-glass clusters, is annihilated above 2.0 K significantly for the samples with x≥1.6. This observation proves conclusively that the Ni-rich samples in the series CeNi_2−xCu_xSn₂ have the advantage of forming the spin-glass-like state.     

Elastic anomalies of La0.67Sr0.33−xBaxMnO3 in the vicinity of TC

With a view to understand the elastic behaviour of a material system, La_0.67Sr_0.33−xBa_xMnO₃ (where x=0, 0.1, 0.2, and 0.33) especially in the vicinity of their magnetic transition temperature T_C, a systematic investigation of ultrasonic velocity over a temperature range 300-400 K has been carried out. The materials prepared by citrate gel route, were characterized structurally by XRD and on analyzing the XRD patterns, it has been concluded that all the samples are having rhombohedral structure with space group of R3?c. The magnetic (T_C) transition temperatures determined by AC susceptibility measurements are found to decrease continuously with increasing barium concentration. Finally, the ultrasonic longitudinal velocities of all the samples are found to exhibit considerable softening in the vicinity of their magnetic transition temperatures, T_C and the observed behaviour is explained using mean field theory and Jahn-Teller theorem.     

Spin-glass-like behaviour of the mixed spinel systems MnxZn1-xCr2O4 and Mn0.75Mg0.25(Cr1-yVy)2O4

NMR and susceptibility measurements have been made on a randomly mixed insulating ferrimagnet and antiferromagnet, Mn_xZn_1-xCr₂O₄. The thermoremanence and the induced unidirectional anisotropy were observed for concentrations lower than x = 0.80, after field cooling. The compound Mn_0.75Mg_0.25Cr₂O₄ shows similar behaviour. When the latter is doped with V³⁺ at the B sites, its magnetic anisotropy increases strongly, but the change in the unidirectional anisotropy is smooth.     

The thermoelectric power in AgxTiS2 and AgxNiPS3. Part II. The ionic component of the thermoelectric power

The EMF of the isothermal cells: Ag/AgI/Ag_xTiS₂: 0<x<1, T=150–200°C/Ag_xNiPS₃: 0<x<3, T=150–350°C has been measured. From the EMF-x curves the existence ranges of the 2-phase (stage I and II) regions ?0.16<x<0.32 for the Ag/Ag_xTiS₂ system at 190°C; 0.20 < x < 0.50 and 1 < x < 2 for the Ag/Ag_xNiPS₃ system at 400°C - have been determined. The results are sustained by X-ray diffraction and electrical conductivity measurements. From the EMF-T curves the partial enthalpy (ΔH?_Ag) and entropy (ΔS?_Ag) of dissolution of silver in the Ag_xSSE (solid solution electrode) materials were obtained. In the case of Ag_xTiS₂, ΔH?_Ag has a low absolute value, while ΔS?_Ag is distinctly positive. The EMF of the Ag/Ag_xNiPS₃ system also has a positive temperature coefficient. Furthermore, the ionic component of the thermoelectric power, ΔE/ΔT, of the thermogalvanic cells: Ag/AgI/Ag_xSSE/AgI/Ag Ag_xTiS₂: 0 < x < 1, T = 150–200°C( T ) (T+ΔT) Ag_xNiPS₃: 0 < x < 1, T= 150–350°C has been measured. The kinetically important heat of transport of silver ions in the Ag_xSSE materials has been determined in two ways: first from the dependence of the ionic Seebeck coefficient (?_Ag+) on reciprocal temperature; and second from direct calculation, using the data for ?_Ag+ and ΔS?_Ag. The heat of transport is much smaller than the activation enthalpy for Ag⁺-conduction, indicating a high ionic polaron binding energy in these materials.     

Impedance spectroscopy and conductivity studies in SrBi2(Ta1−xWx)2O9 ferroelectric ceramics

Complex impedance spectroscopy (CIS) technique has been utilized to investigate the intra- and intergranular contributions to the impedance in pristine and wolframium (tungsten, W) -substituted strontium bismuth tantalate [SrBi₂(Ta_1−xW_x)₂O₉ (SBTW); x=0.0, 0.025, 0.05, 0.075, 0.1 and 0.2] ceramics as a function of temperature and frequency. CIS studies reveal that the electrical relaxation process was temperature dependent and non-Debye type. The temperature dependence of the relaxation time was found to obey the Arrhenius law. DC conductivity of the studied samples obtained from the CIS data decreased for W content upto x=0.05, followed by a subsequent increase with x>0.05. Electrical conductivity data including the typical values of the activation energies at high temperature indicated that the conductivity in the studied ceramics was essentially due to the contribution of doubly ionized oxygen vacancies to the conduction process.     

EPR investigations of oxidation effects in (V1−xMox)2−δO3

Electron paramagnetic resonance (EPR) investigations has been carried out on the new family of molybdenum doped vanadium sesquioxides (V_1−xMo_x)_2−δO₃. The oxidation effects were monitored from the rate of paramagnetic V⁴⁺ created when the sample is exposed to the air. The effects of the oxidation time, sample temperature, and annealing at 1000 °C under a diluted hydrogen atmosphere on the EPR signal features are analyzed. The V⁴⁺ concentration in the oxidized samples is determined and the relaxation effects driven by the conduction electrons are pointed out from the thermal behaviour of the EPR line features. EPR spectra of all the oxidized samples also reveal a small ferromagnetic contribution strongly correlated with the V⁴⁺ content.     

Magnetic and transport properties of SmCoAsO1−xFx

A series of SmCoAsO_1−xF_x (with x=0, 0.05, 0.1, and 0.2) samples have been prepared by solid state reactions. X-ray powder diffraction proved that all samples can be indexed as a tetragonal ZrCuSiAs-type structure. A clear shrinkage of the lattice constants a and c with increasing F content indicated that F has been doped into the lattice. The magnetic and transport properties of the samples have been investigated. Parent SmCoAsO compound exhibited complicated magnetism including antiferromagnetism, ferromagnetism, and ferrimagnetism. For the fluorine doped samples, the antiferromagnetic Néel temperatures were almost independent of the F content and metamagnetic transitions were observed below antiferromagnetic Néel temperatures. With increasing F content, high temperature (below 142 K) ferrimagnetic state gradually changed to ferromagnetic state. In the resistivity result, metallic conduction in the region of 2-300 K and Fermi liquid behavior at low temperatures were shown in all samples. Transport properties at applied magnetic fields showed anomalies at low temperatures.     

Structural,magnetic and electrical properties of Co1−xZnxFe2O4 synthesized by co-precipitation method

Nanoparticles of Co_1−xZn_xFe₂O₄ with stoichiometric proportion (x) varying from 0.0 to 0.6 were prepared by the chemical co-precipitation method. The samples were sintered at 600 °C for 2 h and were characterized by X-ray diffraction (XRD), low field AC magnetic susceptibility, DC electrical resistivity and dielectric constant measurements. From the analysis of XRD patterns, the nanocrystalline ferrite had been obtained at pH=12.5–13 and reaction time of 45 min. The particle size was calculated from the most intense peak (3 1 1) using the Scherrer formula. The size of precipitated particles lies within the range 12–16 nm, obtained at reaction temperature of 70 °C. The Curie temperature was obtained from AC magnetic susceptibility measurements in the range 77–850 K. It is observed that Curie temperature decreases with the increase of Zn concentration. DC electrical resistivity measurements were carried out by two-probe method from 370 to 580 K. Temperature-dependent DC electrical resistivity decreases with increase in temperature ensuring the semiconductor nature of the samples. DC electrical resistivity results are discussed in terms of polaron hopping model. Activation energy calculated from the DC electrical resistivity versus temperature for all the samples ranges from 0.658 to 0.849 eV. The drift mobility increases by increasing temperature due to decrease in DC electrical resisitivity. The dielectric constants are studied as a function of frequency in the range 100 Hz–1 MHz at room temperature. The dielectric constant decreases with increasing frequency for all the samples and follow the Maxwell–Wagner's interfacial polarization.     

Large magnetoresistance in low temperature metallic region of manganite compounds (La0.7−2xEux)(Ca0.3Srx)MnO3 (0.05≤x≤0.15)

Magnetoresistance (MR) and magnetization (dc and ac) measurements have been carried out on the manganites, (La_0.7−2xEu_x)(Ca_0.3Sr_x)MnO₃ (0.05≤x≤0.15), in the temperature range of 5-320 K. At 5 K, an unusually large MR of almost 98% is observed in the x=0.15 sample, nearly up to fields of 4-5 T. This large high-field MR occurs in the metallic region, far below the insulator-metal transition temperature, and does not vary linearly with applied field. The unusual magnetoresistance is explained in the light of various possibilities such as phase segregation, cluster spin-glass behavior, etc.     

Synthesis and characterization of apatite-type La9.67Si6-xAlxO26.5-x/2 electrolyte materials and compatible cathode materials

Apatite silicates have recently been reported as promising electrolyte materials for intermediate temperature solid oxide fuel cells (IT-SOFCs). In this work, a series of apatite-type compounds La_9.67Si_6-xAl_xO_26.5-x/2 (LSAO) with x = 0-2 are synthesized by the sol-gel process at calcining temperature of 800-900 °C. Thermal expansion coefficient, relative density and electrical conductivity of these samples with different Al doped contents are investigated. A symmetrical cell, which is composed of La_9.67Si₅AlO₂₆ electrolyte and (La_0.74Bi_0.10Sr_0.16)MnO_3+δ (LBSM) cathode, is fabricated and electrochemically characterized. LBSM cathode shows a good electrochemical performance, which proves LBSM to be a promising candidate cathode for LSAO-based electrolyte.     

Electrical conductivity and low field magnetoresistance in polycrystalline La1−xKxMnO3 pellets prepared by pyrophoric method

Electrical conductivity and magnetoresistance of a series of monovalent (K) doped La_1−xK_xMnO₃ polycrystalline pellets prepared by pyrophoric method have been reported. K doping increases the conductivity as well as the Curie temperature (T_C) of the system. Curie temperature increases from 260 to 309 K with increasing K content. Above the metal-insulator transition temperature (T>T_MI), the electrical resistivity is dominated by adiabatic polaronic model, while in the ferromagnetic region (50<T<T_MI), the resistivity is governed by several electron scattering processes. Based on a scenario that the doped manganites consist of phase separated ferromagnetic metallic and paramagnetic insulating regions, all the features of the temperature variation of the resistivity between ∼50 and 300 K are described very well by a single expression. All the K doped samples clearly display the existence of strongly field dependent resistivity minimum close to ∼30 K. Charge carrier tunneling between antiferromagnetically coupled grains explains fairly well the resistivity minimum in monovalent (K) doped lanthanum manganites. Field dependence of magnetoresistance at various temperatures below T_C is accounted fairly well by a phenomenological model based on spin polarized tunneling at the grain boundaries. The contributions from the intrinsic part arising from DE mechanism, as well as, the part originating from intergrannular spin polarized tunneling are also estimated.     

Effect of Mg doping on the electrical properties of SnO2 nanoparticles

Sol-gel derived Mg doped tin oxide (Sn_1−xMg_xO₂) nanocrystals were synthesized with x ranging between 0.5 and 7 at. %. Characteristic single phase tetragonal structure of pure and doped samples was obtained and doping saturation was inferred by X-ray diffraction analysis. Structural, morphological and phase informations were obtained by high resolution transmission electron microscope, field emission scanning electron microscope and X-ray photoelectron spectroscopy respectively whereas bonding information was obtained from Fourier transformed infrared spectroscopy. Measurement of different electrical parameters with frequency (200 Hz-10⁵ Hz) has been carried out at room temperature. Ultrahigh dielectric constant and metallic AC conductivity were observed for undoped tin oxide and the profiles reflected highly sensitive changes in the atomic and interfacial polarizability generated by doping concentrations. Relaxation spectra of tangent loss of any sample did not show any loss peak within the frequency range. Both the grain and grain boundary contributions are observed to increase as the doping concentration increased. Results of first principle calculation based on density functional theory indicated effective Fermi level (E_F) suppression due to Mg doping which is responsible for the experimentally observed conductivity variation. AC conductivity was found to depend strongly on the doping concentration and the defect chemistry of the compound. Mg doped SnO₂ may find applications as a low loss dielectric and high density energy storage material.     

Effect of 3d metal ion doping on the structure and superconductivity of (Tl0.5Pb0.5)Sr2CaCu2O7

(Tl_0.5Pb_0.5)Sr₂Ca(Cu_2−xM_x)O₇ (M=Co, Ni and Zn) have been synthesized and investigated by means of X-ray diffraction, scanning electron microscope, electrical resistivity and magnetic susceptibility measurements. X-ray diffraction patterns show that all studied samples contain the nearly single ‘1212’ phase. They crystallize in a tetragonal unit cell with a=3.8028-3.8040 Å and c=12.0748-12.1558 Å. In (Tl_0.5Pb_0.5)Sr₂Ca(Cu_2−xM_x)O₇ system (M=Co or Ni), the superconducting critical temperature T_c decreases linearly with both Co and Ni concentrations and the rate of T_c decrease is around −6.5 and −7.0 K/at%, respectively. For (Tl_0.5Pb_0.5)Sr₂Ca (Cu_2−xZn_x)O₇ system, the dependence of T_c on the Zn dopant concentration deviates from a linear behavior and the Zn substitution suppresses T_c much less (−2.5 K/at%) than the Co and Ni substitutions. The suppression in T_c in Co and Ni doped samples are attributed to the magnetic pair-breaking mechanism and the reduction in the carrier concentration. The suppression of T_c in Zn doped samples is not caused by the reduction in carrier concentration which should remain constant, but rather due to nonmagnetic pair-breaking mechanism induced by disorder as well as the filling of the local Cu d_x²−y² state due to the full d band of Zn ions.     

Magnetic and transport property studies of nanocrystalline ZnxFe3−xO4

The magnetic and transport properties of nanocrystalline Zn_xFe_3−xO₄ with x=0.0, 0.2, 0.4, 0.5, 0.6, 0.8 and 1.0, respectively, fabricated by the sol-gel method have been investigated. Large magnetoresistance (MR) was observed and found to be originated both from the tunneling of the spin-polarized electrons across the adjacent ferromagnetic grains and the scattering by the canted spins at the grain surface near the grain boundaries. It has been revealed that the MR for the Zn_xFe_3−xO₄ samples (x=0, 0.5 and 1.0) increases with the temperature decreasing from room temperature until a maximum is reached at around 55 K. Then a sharp drop occurs with the further decrease in temperature, regarded as a spin (cluster) glass transition. For the samples studied, a biggest low field (0.5 T) MR value of about 20% for x=0 at 55 K has been obtained. The mechanism of the MR behavior of the materials was discussed.     

Effect of grain boundaries on paraconductivity of YBa2Cu3Ox

To investigate the effect of grain boundaries on paraconductivity of YBa₂Cu₃O_x, melt-textured and c-axis oriented thin films with controlled grain boundaries (superconducting transition width, ΔT, varying between 0.54 and 2.85 K) were prepared, and dc-conductivity has been measured as a function of temperature. In the logarithmic plots of excess-conductivity (Δσ) and reduced temperature (?), starting from low values of ?, we have observed three different regions namely critical region, mean field region and short wave fluctuation region. A correlation is observed between the range of critical region and ΔT, which is found to increase with ΔT. While for ΔT values smaller than 2.5 K only static critical region is observed, for higher ΔTs both static and dynamic critical regions are observed. In the mean field region a crossover from 3D to 2D was observed for all the samples. At ? values larger than 0.24, the excess-conductivity decreased sharply as ?⁻³, which suggested the existence of the short wave fluctuations.