The influence of hydrogen on the atomic distribution function and electrical resistance of amorphous chromium films

Electrical resistivity of amorphous chromium films (20–37 nm thick) deposited in a hydrogen atmosphere (P _{H 2}=8·10^–6–2·10^–4 hPa) onto a substrate cooled by liquid helium down to 2 K is measured, and electron-diffraction studies have been performed immediately after the quench condensation and after annealing to different temperatures up to 300 K. The preparation method employed permits a considerable hydrogen enrichment of the films to be reached. The maximum hydrogen concentration corresponds approximately to a stoichiometric composition of CrH. It is found that as the maximum concentration is approached the atomic distribution functionG(r) changes remarkably. The interatomic distances increase considerably (by 10%) and the atomic densities decrease. It is quite possible that amorphous chromium hydride is a final state with the maximum hydrogen concentration. For films with intermediate concentration,G(r) is found to vary substantially under annealing up to 90 K. The electron-diffraction and electronmicroscopic data, as well as the variations in resistivity due to annealing, suggest that with annealing up to 90 K, a hydrogen redistribution occurs in the amorphous films, initially homogenous in concentration. We observe also distinct indications of separation into phases with increased and reduced hydrogen contents.     

Micro-Raman spectroscopy in polycrystalline CuInSe2 formation

The crystalline formation of CuInSe₂ thin films has been investigated using micro-Raman spectroscopy and AES composition analysis. It is confirmed that the Raman peaks are stongly dependent on the surface morphology and the Cu:In:Se ratio. In the films annealed at 315°C, crystalline grains larger than 2 m show Raman peaks at 174 cm^–1 and 258 cm^–1. The In content is very low and the Cu:Se ratio is about 1:1 in these grains. The low In concentration is thought to be due to the formation of In₂O₃ on the surface. On the other hand, random structures of 1–2 m grains found in films annealed at temperatures below 305°C show peaks at 174 cm^–1 and 186 cm^–1 instead of 258 cm^–1 and have a Cu:In:Se ratio of 1:1:3–4. Thus the 186 cm^–1 peak is thought to be related to a Cu, In-deficient phase when compared to stoichiometric CuInSe₂. The optimum annealing condition was found by analyzing the Raman spectra and composition of different crystalline CuInSe₂ grains. Films annealed under this condition exhibited a clear Raman peak at 174 cm^–1 and consisted of clusters of crystals less than 1 m in size.     

Y1Ba2Cu3O7-δ thin films from KrF laser ablation with substrate heating and in situ patterning by CO2 laser radiation

Y₁Ba₂Cu₃O_7– thin films were deposited by KrF laser ablation while replacing conventional contact heating by cw CO₂ laser irradiation of the substrate front surface. The HTSC films obtained on (100)ZrO₂ showed T _c(R=0)=90 K, T(90–10%)=0.5 K, j _c=2.5 × 10⁶ A/cm², a sharp transition in the ac susceptibility X(T), and pure c-axis orientation. Micrographs of thin films (< 0.5 m) showed a smooth morphology while thick films (>1 m) contained many crystallites sticking in the bulk material. Furthermore, in situ patterning was achieved during deposition by local laser heating of a selected substrate surface area. The resulting planar films contained amorphous, semiconducting parts only 1 mm or less apart from crystalline material showing the above HTSC quality.Presented at LASERION '91, June 12–14, 1991, München (Germany)     

Photoconductivity of highly excited A IV B VI thin films

We report the results of picosecond photoconductivity measurements in photosensitive electrolytically deposited PbS and vacuum evaporated PbTe polycrystalline films. We determine Auger recombination to be the prevailing carrier recombination mechanism in highly excited PbTe and PbS films and found Auger coefficients _A5×10^–28 cm⁶ s^–1 for PbTe and _A5.3×10^–29 cm⁶ s^–1 for PbS for carrier concentration changes N>10¹⁸ cm^–3. The results indicate that the low mobility values are controlled by intergrain carrier scattering. We have studied the thermal annealing influence on picosecond photoconductivity of the films.     

Influence of localized states in a semiconducting film of critical thickness on the electrical properties of thinfilm ms' is structures

The current-voltage and high-frequency capacitance-voltage (C-V) characteristics have been used to investigate the electrical properties of thin Ga₂Ses films in Me-Ga₂Se₃-Si structures (n and p type). The features of the high-frequency C-V dependences of the structures based on p-type Si are explained in the framework of a model of the MS' IS structure with donor type centers in the semiconducting S'film (the thickness of the S' film is comparable with the generalized screening length). It is shown that in the investigated structures the charge transport mechanism is due to ionization of volume centers (the activation energy of a deep donor center is 0.72 eV) in the Ga₂Se₃ film, the mechanism being enhanced by an electric field. Analysis of the high-frequency C-V characteristics showed that the majority carriers in the Ga₂Se₃ films are electrons with concentration 10¹² cm^–3; the concentration of the deep donor centers is 5·10¹⁶ cm^–3.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 83–88, January, 1981.     

Superconductivity in simple cubic Te—Au alloys produced by ion irradiation

Superconducting simple cubic Te_100–x Au _x films (10<x<90) were produced by He⁺-irradiation at low temperatures as well as at room temperature. After low temperature irradiation the as-irradiated disordered samples forx<60 at % Au are in a semiconducting state which becomes unstable at about 230 K, and then transform into the s.c. superconducting phase. The resistivity of the s.c. phase displays a negative temperature coefficient for residual resistivity values larger than 100 cm. In comparison to splat cooled foils, the s.c. Te—Au phase in the He⁺-irradiated films is more homogeneous. The observed variation of the transition temperature to the superconducting state with Au content is explained as an interaction of the Fermi-surface with several Bragg-planes.     

Photoelectric properties of Pb1−x−y Sn x Ge y Te:In epitaxial films

Pb_1–x–y Sn _x Ge _y Te:In epitaxial films are examined in a wide temperature interval and at various background fluxes. These films have high sensitivity to infrared radiation in the spectral range <20m. The lifetime depends exponentially on temperature and varies from several seconds at T=10 K to 10^–2 s at T=20 K. The two-electron model of Jahn-Teller centers is proposed to explain the results. Multielement photoresistors based on these films are fabricated and D*=1.7×10¹³ cm Hz^1/2 W^–1 at T=25 K is achieved. Noise of the photoresistors is independent of background flux when it varies from 10¹² cm^–2 s^–1 to 10¹⁸ cm^–2 s^–1. As compared with Si:Ga and Ge:Hg photoresistors, the responsitivity is several orders larger at the operating temperature 25–30 K.     

Submillimeter wave photoconductivity observation of shallow donors in In0.53Ga0.47As

The hydrogen like 1s 2p (m=–1,0,+1) transitions of two donors have been observed in high intensity magnetic fields up to 8.5T. The m=–1 transitions ocurred between 2 cm^–1 and 25 cm^–1. The signature curves for donors in ternary semiconductor In_0.53Ga_0.47As have now been established.Work supported by the U.s. Air Force Office of Scientific Research under Contract # AFOSR-78-3708-DSupported by the National Science Foundation     

Preparation of high J c YBa2Cu3O7−δ superconducting thin films by ion beam sputtering deposition

Preparation of high T _c and high J _c YBa₂Cu₃O_7– superconducting thin films by ion beam sputtering deposition is reported. The main factors affecting the composition of the films and the orientation of the crystal grains have been examined. Experimental results show that the Y, Ba and Cu composition of as-deposited films can be conveniently and accurately adjusted by a combined sputtering target which consists of a large sintered target of YBa₂Cu₃O_7– and a small one that is Ba and Cu rich (YBa_2.5Cu_3.3O_x). Fabrication conditions of highly oriented superconducting thin films are described. YBa₂Cu₃O_7– superconducting films with zero resistance at 88–90.5K and critical current density J _c (at 77K) of 1.5×10⁵ A/cm² are obtained.     

Infrared absorption of silane,ammonia, acetylene and diborane in the range of the CO2 laser emission lines: Measurements and modelling

Absorption spectra of the gases SiH₄, NH₃, C₂H₂ and of SiH₄/Ar and SiH₄/B₂H₆ mixtures have been measured in the spectral range of the CO₂ laser from 9.2 to 10.8 µm. In agreement with literature, silane shows the highest absorption (absorption coefficient = 3.3 × 10^–2 Pa^–1 m^–1). The deviation of the measured absorption behaviour of silane from literature, as far as the pressure dependence is concerned, can be explained by the enhanced spectral energy density in our experiment. This is confirmed by a rate-equation model involving the basic mechanisms of V-V and V-T energy transfer between vibrationally excited silane molecules. In contrast to silane, the absorption coefficient of NH₃ at the 10P(20) laser line is 4.5 × 10^–4 Pa^–1 m^–1 atp = 20 kPa and has its maximum of 4.5 × 10^–3 Pa^–1 m^–1 at the 10R(6) laser line. For C₂H₂ and B₂H₆, is even less ( 2.1 Ò 10^–5 Pa^–1 m^–1 for C₂H₂).     

Production of YBa2Cu3O7−x superconducting thin films by pulsed pseudospark electron beam evaporation

Thin-film superconducting YBa₂Cu₃O_7–x layers have been produced in a single-step process by pulsed electron beam evaporation from a stoichiometric 1-2-3 target. The films were produced at the 100 surface of SrTiO₃ substrates heated to a temperature of approximately 1000 K in a pure oxygen atmosphere of about 10 Pa total pressure. After deposition the films were cooled in situ within 20 minutes to ambient temperature. At present, the films are polycrystalline and show a T_c,zero of 83 K with a transition width of 3–5 K. Critical current densities of 7·10⁴ A/cm² at 4.2 K and zero magnetic field have been achieved. The pulsed electron beams used in these experiments are produced by a pseudospark discharge; the estimated energy density deposited at the target surface by the electron beam is of the order of 4 J/cm².     

Nonlinear Optical Characteristics of BSO and BGO Photorefractive Crystals in Visible and Infrared Ranges

Nonlinear refraction, nonlinear absorption and optical limiting in photorefractive crystals Bi₁₂SiO₂₀(BSO) and Bi₁₂GeO₂₀(BGO) at the wavelengths of 1064 and 532 nm were investigated. It was shown that both BSO and BGO crystals possess by positive nonlinear refraction in two investigated spectral ranges (n ₂ ^BSO=(2.5 ± 0.5)× 10^–12 esu, n ₂ ^BGO=(6.3 ± 1.3)× 10^–12 esu at equals 1064 nm; n ₂ ^BSO=(4.4 plusmn; 0.9)× 10^–12 esu, n ₂ ^BGO=(7.4 ± 1.5)× 10^–12 esu at = 532 nm). The nonlinear absorption was due to three-photon absorption at the wavelength of 1064 nm ( ⁽³⁾ _BSO=(2.5 ± 0.8)× 10^–20cm³W^–2, ⁽³⁾ _BSO=(4.4 ± 1.3)× 10^–20cm³W^–2) and two-photon absorption at the wavelength of 532 nm ( ⁽²⁾ _BSO=(2 ± 0.4)× 10^–9cm W^–1, ⁽²⁾ _BGO=(3.7 ± 0.7)× 10^–9cm W^–1).     

Temperature dependence of anisotropy in monocrystalline lithium ferrite films

A study of crystallographic and uniaxial anisotropy in monocrystalline Li-ferrite films in the temperature range 4.2–550°K is presented. The experimental results K₁(T) agree well with calculations based on the one ion model with crystalline field coefficients of a_A=–2.77 ·10^–2 cm^–1, a_B=3.34 · 10^–2 cm^–1. An experimental function K_u(T) is obtained which does not contradict the assumption that anisotropic stresses are responsible for the development of uniaxial anisotropy in Li-ferrite films.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 113–116, August, 1973.     

Extra-drude contribution to the far infrared conductivity oxygen deficient YBCO films

We measured reflectance spectra R(v) of oxygen deficient Y₁Ba₂Cu₃O_7–x (YBCO) films of different thickness, with critical temperatures between 85 and 87 K. Measurements were made at room temperature between 15 and 25000 cm^–1. The measured R(v) have a maximum below 100 cm^–1 and then decrease for v 0. This low frequency behaviour of R(v) can be accounted for by considering a relevant extra-Drude contribution to the far infrared optical conductivity of YBCO.     

Indium tin oxide as an optical memory material

Indium Tin Oxide (ITO) films prepared by reactive rf sputtering show excellent properties for optical recording applications in a very narrow range of oxygen partial pressure (around 4×10^–5 Torr). This narrow range is at the edge of a plateau in the electrical conductivity of the films. A small increase in the oxygen partial pressure (P(O₂)5×10^–5 Torr) causes a large and abrupt change in the electrical conductivity as well as in the structural and optical properties of these films. In addition, irradiating films at the edge of the plateau (P(O₂)4×10^–5) with a low-power pulsed laser (25 mW) yields transparent films. These results suggest that the same mechanism may be responsible for the opaque to transparent transformations observed in these experiments.     

Features of current carrier scattering in epitaxial films

The properties of epitaxial cadmium selenide films obtained by condensation in a vacuum on mica substrates under almost equilibrium conditions are investigated. The temperature dependences of the conductivity and current carrier mobility and concentration are studied. The electron concentration in the films depended on the gas phase composition (coevaporation of CdSe + Se or CdSe + In) and varied between 5·10¹⁰cm^–3 and 3.5·10¹⁸. It is shown that the current carrier scattering mechanism depends on their concentration and production conditions. For n₁ 10¹⁶ cm^–2 (T_S520C),n₂ < 10¹⁵ (T_S=630C), scattering on intercrystallite barriers predominated. For n₁ and n₂ greater than the quantities mentioned, scattering by ionized defects becomes dominant. It is established that the magnitude of the intercrystallite barrier in films with 10¹⁵ < n < 10¹⁶ cm^–3 is comparatively small and does not exceed 4·10^–3 eV, whereupon scattering at the barriers is not explicitly manifest. Concentrations of the ionized centers, magnitudes of the intercrystallite barriers, and ionization energies of the donor levels are determined for films obtained under different conditions.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 98–103, September, 1977.     

Far infrared surface electromagnetic waves propagation on A3B5 semiconductors

The real and imaginary parts of surface electromagnetic waves (SEW) refraction index n_ef in n-type InSb, GaAs and InP have been measured in FIR region (=85–142 cm^–1). The n_ef measurements allowed to determine plasma frequency _p and plasmon damping . The obtained nonlinear SEW propagation distance L dependence on Te impurity concentration in GaAs (N=10¹⁷–10¹⁹ cm^–3) was explained taking into account the conduction band nonparabolity as well as the presence of isostructural phase transition at N=2×10¹⁰ cm^–3.     

Influence of Oxygen Vacancies on the Luminescence Spectra of Y2O3 Thin Films

Luminescence spectra of Y₂O₃ thin films annealed in air and in vacuum are investigated. It is established that the presence of oxygen vacancies leads to a decrease in the intensity of the luminescence band with a maximum at 3.4 eV (related to emission of selflocalized Frenkel excitons describing the excited state of a molecular ion (YO₆)^9–) and of the luminescence band with a maximum at 2.9 eV (related to the anion sublattice). It is revealed that the oxygen vacancies also lead to a decrease in the luminescence intensity in the 2.60, 2.35, 2.10. 1.90, and 1.70 eV bands that are related to radiative recombination in the donor–acceptor Y³⁺–O^2– pairs. The donor–acceptor distances are calculated.     

Dielectric properties of SrZrO3 thin films prepared by pulsed laser deposition

SrZrO₃ (SZO) thin films have been prepared on Pt-coated silicon substrates and directly on Si substrates by pulsed laser deposition (PLD) using a ZrSrO target at a substrate temperature of 400 °C in 20 Pa oxygen ambient. X-ray –2 scans showed that the as-deposited films remain amorphous at a substrate temperature of 400 °C. The dielectric constant of SZO has been determined to be in the range 24–27 for the Pt/SZO/Pt structure. Capacitance–voltage (C–V) characteristics of a metal-oxide-semiconductor (MOS) structure for SZO films deposited in 20 Pa oxygen ambient and 20 Pa nitrogen ambient (SZON) indicated that incorporation of nitrogen during the substrate heating and film deposition can suppress the formation of an interfacial SiO₂ layer, and the SZON films have a lower equivalent oxide thickness (EOT) than that of the SZO films. However, the leakage current of the SZON films is larger than that of the SZO films. The EOT is about 1.2 nm for a 5-nm SZON film deposited at 400 °C. The leakage-current characteristics of as-deposited SZON films and SZON films post-annealed in oxygen ambient by rapid thermal annealing (RTA) have been studied comparatively. The films post-annealed with RTA have a lower leakage current than the as-deposited SZON films. Optical transmittance measurements showed that the band gap of the films is about 5.7 eV. It is proposed that SrZrO₃ films prepared at 400 °C are potential materials for alternative high-k gate-dielectric applications. PACS 77.84.Bw; 77.84.-s; 77.55.+f     

Integration of GaN thin films to SiO2–Si(100) substrates by laser lift-off and wafer fusion method

A process methodology has been adopted to bond GaN thin films to Si(100) substrates using the combination of laser lift-off and direct wafer fusion. Using optimum excimer laser conditions, 2–10 μm of GaN is lifted-off from sapphire. The lifted-off thin film is cleared from gallium residual and then suitably treated in a hydrofluoric, nitric and acetic acid mixture to render the surface hydrophilic. This treatment provides van der Waals bonds to immediately contact bond with SiO₂–Si(100) substrate at room temperature. The bonds are further strengthened by a high temperature annealing at 650 C for 2 h. The structural and mechanical characteristics of the bonded structure reveal uniform and high quality bonding. The optical characteristics of the transferred bonded film on SiO₂–Si(100) substrate exhibit similar properties to that of GaN on sapphire. In a similar manner, high-brightness blue LEDs were transferred from sapphire to SiO₂–Si(100) substrate with no deterioration in the electrical and optical performance of the device.