Transport properties of conduction electrons in n-type inversion layers in (100) surfaces of silicon

The conductivities of n-type inversion layers in (100) surfaces of p-type silicon were measured extensively as functions of electron density in the inversion layer, the ambient temperature and the applied magnetic field. Measurements were made on the carefully fabricated four “classes” of MOS field-effect transistors whose maximum mobilities at 4·2K were 14,000, 8000, 6800 and 1500 cm²/V·sec, respectively. From the temperature dependence of the mobility, dominant momentum scattering was reasonably ascribed to surfon at 100 ～ 300 K. and degenerate or non-degenerate coulomb scattering at lower temperatures as treated by Stern and Howard. From the curves of conductivity vs temperature at low temperatures and low electron concentration for specimens with high mobilities, an activation energy of 1·2 meV, relating to the shallow bound states associated with the lowest electrin sub-band, was observed. The conductivity σ_xx of the inversion layer in a strong transverse magnetic field showed behaviors like those of completely free electrons without effects belonging to its material in its oscillation pattern. That is, the peak value of σ_xx as a function of the gate voltage V_R dependend only on the Landau index. The σ_xx as a function of the magnetic field H at a constant V_R showed a similar Shubnikov-de Haas (SdH) type oscillation to that of three dimensional one. The SdH oscillation gave an “apparent” g-value g* which ranges from 2 to 5 depending on the surface carrier density n_s, due to the change in the ratios of the widths of the Landau levels to the level separation. The “reasonable” g-value of the conduction electrons in the inversion layer has been determined using a modified tilted magnetic field method. The g-value at the fixed magnetic field was independent of surface carrier density n_s and tended to 2 in the extreme strong magnetic field.Discussion is made of the g-value relating to the Landau level width and the energy gaps in the density of states under strong magnetic field.     

EPR of a fullerene-molecule-derived paramagnetic center as a mesoscopic conducting object

Discussion of theg-factor value of fullerene is based on the model of itinerant electrons restricted to the surface of the fullerene molecule C₆₀. The Ag shift, i.e., the difference between the experimentalg-factor and theg-factor of free electron Δg = g ? 2.0023 for C ₆₀ ^?1 is negative as for a very small metallic conducting particle.g-factor value is proportional to the interaction between itinerant electrons in the conduction band, thus the Δg is negative for C ₆₀ ^?1 and C ₆₀ ^?3 having less than half filled conduction band, while Δg is positive for C ₆₀ ⁺ where the conduction band is almost filled.     

Cyclotron resonance of electrons and holes in electric surface subbands of tellurium

We present first measurements of the submillimeter-cyclotron resonance of electrons and holes in electric surface subbands of tellurium. From the resonance in the inversion layer we have obtained for the magnetic field paralled to the trigonal axis, the cyclotron mass of the surface electron m_ce = (0.117 ± 0.002)m₀. The resonance of the accumulation layer splits and suggests the contribution of different nonparabolic subbands.     

Dependence of electron spin g-factor on magnetic field in quantum wells

The dependence of electron spin g-factor on magnetic field has been investigated in GaAs/AlGaAs quantum wells. We have estimated the electron g-factor from spin precession frequency in time-resolved photoluminescence measurements under a magnetic field in different configurations; the magnetic field perpendicular (g_⊥) and parallel (g_∥) to the quantum confinement direction. When the angle between the magnetic field and the confinement direction is 45°, we have found that g-factor varies depending on the direction of magnetic field and the circular polarization type of excitation light (σ⁺ or σ^?). These dependences of g-factor exhibit main features of Overhauser effect that nuclear spins react back on electron spin precession. The value of g_⊥ and g_∥ corrected for the nuclear effects agree well with the results of four-band k·p perturbation calculations.     

Surface quantum oscillations in (110) and (111) n-type silicon inversion layers

Shubnikov-de Haas oscillations have been studied for (110) and (111) n-type silicon inversion layers. The measured cyclotron masses m_c = (0.38 ± 0.03)m₀ and m_c = (0.40 ± 0.03)m₀ for (110) and (111) planes, respectively, are larger than theoretically predicted values. The experimental valley degeneracy factor g_v = 2 ± 0.2 for both orientations is also at variance with self consistent calculations. The electronic g-factor depends on the surface carrier concentration and is enhanced over its bulk value. There was no evidence for the occupation of other subbands.     

Spin-dependent photoemission induced by a jump in the electron g-factor at the p-GaAs(Cs,O)-vacuum interface

It has been found experimentally that the probability of emitting electrons from p-GaAs(Cs,O) to vacuum in the presence of a magnetic field depends on the sign of the circular polarization of exciting light. The main cause of this effect is the jump in the electron g-factor at the semiconductor-vacuum interface (from g* = ?0.44 in GaAs to g ₀ = 2 in vacuum). Owing to the jump in the electron g-factor, the effective electron affinity depends on the mutual orientation of optically oriented electrons and the magnetic field and this dependence results in the spin-dependent photoemission.     

Zeros of the transverse magneto-resistance in N-type silicon (100) inversion layers

The transverse and Hall resistance are investigated under quantizing electric and magnetic fields in n-type silicon (100) MOSFET inversion layers. The transverse resistance ρ_xx vanishes within finite ranges of the gate voltage where the concentration of channel conduction electrons is constant. The variation of the oscillatory period towards low gate voltages is not compatible with the concept of carrier localization and therefore can be understood by charge transfer into states outside the surface channel.     

Dependence on substrate bias of the effective mass and dingle temperature of electrons in the surface inversion layer of silicon

The amplitude of the quantum oscillations in the magnetoconductance of a silicon inversion layer has been studied as a function of gate voltage V_g, for different values of the temperature T, applied magnetic field strength H and substrate bias V_s. By analyzing the amplitude of the oscillations at fixed V_g and V_g as a function of T and H, the dependence of the cyclotron effective mass m¹ and the Dingle temperature T_D on V_g and V_s can be obtained. The dependence of m¹ on V_g for different values of V_s is compared with the prediction of theory.     

On the g factor for electrons in n-type silicon surface inversion layers

Self-consistent calculations for energy levels are performed for n-type inversion layers of silicon with magnetic field perpendicular to the (100) surface. ‘Apparent’ g factor g¹, obtained from the period of oscillation of states density at Fermi level for varying magnetic field, is plotted as a function of the $\text{Γ}\text{2βH}$, where Γ is the width of Landau levels. The results show that $\text{g}{}^1\text{～ g}\text{for Γ ? 2β}\text{H,}\text{and}\text{g}{}^1\text{～}\text{5 for Γ < 2β}\text{H}$. This means that we should be very careful when interpret the g shift of electrons in inversion layers for small surface electron density.     

Anisotropy of phosphorous electron donor state in strained clusters in silicon at low temperatures

An anisotropic EPR spectrum at T = 4 K was observed in silicon samples irradiated by phosphorus ions and subsequently annealed at 1000°C. Epitaxial silicon layers with a natural isotope composition and enriched by ²⁸Si isotope grown on a natural silicon wafer were investigated. The spectrum consisted of three lines corresponding to different g-factor components: g _x ,g _y , and g _z . The central line was overlapped by the isotropic line coinciding by its g-factor with the line of the conduction electrons in silicon. The shape of the spectral lines indicated that the spectrum was due to the paramagnetic centers which belong to the randomly oriented clusters with the anisotropic g-factor. The nature of the anisotropic EPR spectrum is due to the electrons localized on donors located in the strained phosphorous clusters. The strains were caused by either incompletely annealed defects after the phosphorous implantation (E = 40 keV, D = 2 × 10¹⁴ cm⁻², T _ann = 1000°C, 1 h) or phosphorous atoms in clusters. The distance between the components strongly depended on the temperature and microwave power and decreased as they increased.     

Classical in-plane negative magnetoresistance and quantum positive magnetoresistance in undoped InSb thin films on GaAs (1 0 0) substrates

Magnetoresistance (MR) effects have been investigated in perpendicular and parallel magnetic fields at 300, 80 K and liquid He temperatures for undoped InSb thin films 0.1–2.3 μm thick grown on GaAs(1 0 0) substrates by MBE. At high temperatures, the intrinsic carriers show the parabolic negative MR observable only in magnetic fields parallel to the film. The skipping-orbit effect due to surface boundary scattering in the classical orbits in the plane vertical to the film has been argued to be responsible for the negative MR. At low temperatures (T=80 K), the transport is dominated by the two-dimensional (2D) electrons in the accumulation layers at the InSb/GaAs(1 0 0) hetero interface; MR is positive and shows a logarithmic increase with anisotropy between parallel and perpendicular field orientation, arising from the 2D weak anti-localization (WAL) that reflects the interplay between the spin-Zeeman effect and strong spin–orbit interaction caused by the asymmetric potential at the interface (Rashba term). The zero-field spin splitting energy of Δ₀13 meV, the electron effective mass of m^*0.10m₀ seven times of the band edge mass in bulk InSb and the effective g-factor of |g^*|15 in the accumulation layer have been inferred from fits of MR for the 0.1 μm thick film to the 2D WL theory.     

Frequency modulation of the 6.2 keV Mössbauer states of181Ta

Mössbauer sidebands up to the first order from a single parent line have been produced by subjecting a non magnetic W(¹⁸¹W) Mössbauer source to a strong oscillating magnetic field of up to 230 Oe amplitude and a frequency of about one megahertz. The sidebands positions and intensities agree very well with theory, which is based on a periodic time-dependent interaction of the magnetic field with the nuclear magnetic moments of ground and excited states, respectively. From the sideband intensity ag-factor ratio ofg _e /g _g =1.75(6) was derived.     

Monte Carlo calculation of hot electron drift velocity in silicon (100)-inversion layer by including three subbands

A Monte Carlo calculation of the drift velocity of hot electrons in quantized silicon inversion layers for (100)-oriented surface has been performed by considering the three lowest subbands. The intersubband and intervalley phonons conform to the surface Brillouin zone structure and are assumed to have bulk values of deformation potential constants. It is found that most of the electrons tend to occupy the E_0′ subband at about 10 kV cm^-1. The effect of surface-oxide-charge scattering is found to be quite important. The calculated curves show a change of slope at about 10 kV cm^-1 and do not show clear saturation. This is in contrast with the experimental curve which shows first a smooth variation and then tends to saturate.     

Effects of effective potential on g-factor in Si inversion layers

Taking into consideration the effective potential and the magnetic field dependent dielectric function, the effective g-factor and the magnetic susceptibility have been calculated. Results show that both quantities oscillate with magnetic field.The amplitude of the effective g-factor found in this way has the value between 3.26 and 2.49 for surface electron densities n ranging from 1.0×10¹² to 7.0×10¹² cm^-2. The enhancement of g-factor is divided into two parts, noninteracting and interacting part. The interacting part is dominant and shows $\text{n}{}^{\mathrm{<mtext>-3</mtext><mtext>2</mtext>}}$ behavior.     

Electron-electron interactions in the surface inversion layer of a semiconductor

The effective unscreened interaction between a pair of electrons in the inversion layer of an MIS structure is estimated by using classical electrostatics together with a knowledge of the quantum mechanical wave function of the inversion layer electrons. The change in the effective mass $\text{m}{}^1$ and effective g-value g¹ are evaluated in the random phase approximation.     

The surface relaxation of Al as determined by electron energy loss spectroscopy on plasmons

Electron energy loss spectroscopy (EELS) on plasmons has been applied to determine the thermal expansion coefficient on the surface and to estimate the density of conduction electrons in the surface layer of aluminium. Using the data on the temperature dependence of the surface plasmon energy shift, the value of thermal expansion coefficient on the surface was calculated to be α_s=1.3 × 10^?4K^?1 that is about two times higher than the bulk value. A simple model is proposed which takes account of the influence of electron density non-uniformity in the surface layer on the dispersion of plasma oscillations. An estimation of the density of conduction electrons in the surface layer based on the observed dependence of the surface plasmon energy on the energy of primary electrons gave a value about 5% lower than the bulk value. The thickness of altered surface layer is about 10 Å.     

Submillimetre cyclotron resonance of electrons in GaP

The first observation of cyclotron resonance in n-type GaP is reported. The electrons were thermally excited at a temperature of 100 K and the resonance was observed at submillimetre wavelengths (337 μm) using a pulsed magnetic field of 0–300 kG. From experiments with B∥〈100〉, 〈110〉 and 〈111〉 it was found that the transverse effective mass for electrons is $\text{m}{}^1{}_{\mathrm{\perp }}\text{= 0.25 ± 0.01 m}{}_0$ and that the anisotropy factor for the conduction band ellipsoids is K = 20⁺¹⁰_-6.     

New determination of the magnetic moment of the54Fe(2 1 + ) state at 1.408 MeV

Relative to the wellknowng-factor of⁵⁶Fe(2 ₁ ⁺ ) at 0.847 MeV, theg-factor of the⁵⁴Fe(2 ₁ ⁺ ) state at 1.408 MeV has been remeasured employing the technique of transient magnetic fields (TF) with the ions slowed down in ferromagnetic Gd host at initial velocities of 2.5 ν₀. Coulomb excitation on beams of^54,56Fe was accomplished with a Si target. The value obtained,g=1.05(17), is in excellent agreement with two previous results but disagrees with the value from a TF measurement where the ions passed through ferromagnetic Fe.     

The magnetization of GdAl2

The magnetization of a single crystal of GdAl₂ has been measured parallel to the easy direction as a function of field (maximum field 1.7 T) within the temperature range 4.2–300 K. The main emphasis was placed on the results obtained for the ferromagnetic phase. From an analysis based on molecular field theory it is deduced that the magnetic moment at 0 K is 7.2 μ_B per Gd ion and that the molecular field cannot be represented by a simpler polynomial than λ₁M + λ₂M³ + λ₃M⁵. The same data is analysed using spin-wave theory from which it is deduced that the spin-wave stiffness is 18 meV Ų and that the conduction band susceptibility is approximately 2.6 x 10^-6 emu g^-1. The conduction electron polarization, parallel to the Gd ion moment, amounting to 0.2 μ_B per Gd ion implies the presence of an internal field acting on the conduction electrons of approximately 200 T at 0 K.     

Peculiarities in the magnetic,magnetoelectric, and magnetoelastic properties of SmFe<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> multiferroic

Results of a complex investigation of the magnetic, magnetoelectric, and magnetoelastic properties of a SmFe₃(BO₃)₄ single crystal are presented. Samarium iron borate is similar to another easy-plane iron borate, NdFe₃(BO₃)₄, in that it possesses a large value of the magnetic-field-induced polarization (about 500 μC/m²), the sign of which changes when the field direction is changed between axes a and b of the crystal. However, the temperature dependence of the magnetic susceptibility and the field dependence of polarization and magnetostriction of the two compounds are significantly different, which is explained by the weak effect of external magnetic field on the ground-state multiplet of samarium ion, which is characterized by an extremely small value of its g-factor.