A search for deeply bound pionic states of xenon produced in the 136Xe(d, 3He)135Xeπ-bound reaction

A search for deeply bound pionic states of xenon produced in the ¹³⁶Xe(d, ³He)¹³⁵Xe_π-bound reaction at E _d = 500 MeV is reported. The population of the 1s pionic-atom state of ¹³⁵Xe is observed on the predicted level of the cross section ～ 40 μb/sr. The binding energy of the 1s state, B = 2.9 ± 0.5 MeV, however, is lower than theoretically predicted.     

Optical and ESR analysis of the Fe acceptor in InP

Photoluminescence (PL), optical absorption, and electron spin resonance (ESR) have been applied to detect the different charge states of substitutional Fe in InP. The 3d⁶ one electron trap state is detected by the PL and optical absorption lines of the ⁵T₂?⁵E transitions, whereas the 3d⁵ neutral acceptor state is identified by its characteristics S = 5/2 ESR signal.     

Hopping conductivity of carbynes modified under high pressures and temperatures: Galvanomagnetic and thermoelectric properties

The conductivity, thermopower, and magnetoresistance of carbynes structurally modified by heating under a high pressure are investigated in the temperature range 1.8–300 K in a magnetic field up to 70 kOe. It is shown that an increase in the synthesis temperature under pressure leads to a transition from 1D hopping conductivity to 2D and then to 3D hopping conductivity. An analysis of transport data at T ≤ 40 K makes it possible to determine the localization radius a ～ (56?140) Å of the wave function and to estimate the density of localized states _g(E _F) for various dimensions d of space: _g(E _F) ≈ 5.8 × 10⁷ eV^?1 cm^?1 (d=1), _g(E _F) ≈5×10¹⁴ eV^?1 cm ^?2 (d=2), and _g(E _F)≈1.1×10²¹ eV^?1 cm_?3 (d=3). A model for hopping conductivity and structure of carbynes is proposed on the basis of clusterization of sp ² bonds in the carbyne matrix on the nanometer scale.     

Coherent transmission of nodal Dirac fermions through a graphene-based superconducting double barrier junction

Transport characteristics of relativistic electrons through graphene-based d-wave superconducting double barrier junction and ferromagnet/d-wave superconductor/normal metal double junction have been investigated based on the Dirac–Bogoliubov–de Gennes equation. We have first presented the results of superconducting double barrier junction. In the subgap regime, both the crossed Andreev and nonlocal tunneling conductance all oscillate with the bias voltage due to the formation of Andreev bound states in the normal metal region. Moreover, the critical voltage beyond which the crossed Andreev conductance becomes to zero decreases with increasing value of superconducting pair potential α. In the presence of the ferromagnetism, the MR through graphene-based ferromagnet/ d-wave superconductor/normal metal double junction has been investigated. It is shown that the MR increases from exchange splitting h ₀=0 to h ₀=E _F (Fermi energy), and then it goes down. At h ₀=E _F, MR reaches its maximum 100. In contrast to the case of a single superconducting barrier, Andreev bound states also manifest itself in the zero bias MR, which result in a series of peaks except the maximum one at h ₀=E _F. Besides, the resonance peak of the MR can appear at certain bias voltage and structure parameter. Those phenomena mean that the coherent transmission can be tuned by superconducting pair potential, structure parameter, and external bias voltage, which benefits the spin-polarized electron device based on the graphene materials.     

Configuration mixing and crystal-field splitting of Cr2+ in CdS

The effect of interaction of excited configurations 3d³4s, 3d³4p and 3d³4d with the ground 3d⁴ configuration on the crystal field splitting (E- T₂) of the tetrahedral Cr²⁺ ion in CdS has been studied by a rigorous method in which the energy matrix constructed in a basis of states belonging to both the ground and excited configurations has been directly diagonalised. Such a fairly rigorous treatment yield surprising results and interesting conclusions. Even though the calculation is based on an ionic model of the crystal field, it is found that inclusion of excited configurations accounts for the entire crystal field splitting observed experimentally in this particular case of Cr²⁺ in CdS. The configuration mixing in our treatment yields for the crystal field splitting a result few times greater than that found when the calculation is confined within the ground configuration only. Furthermore, the present investigation indicates that the second order perturbation method used in the earlier treatment was quite inadequate in the case of Cr²⁺ in CdS.     

Effect of correlation between the shallow and deep metastable level subsystems on the excitonic photoluminescence spectra in <Emphasis Type="Italic">n</Emphasis>-GaAs

The excitonic photoluminescence spectra of GaAs epitaxial layers are studied. Changes in the relative arrangement of shallow and deep centers in the tetrahedral lattice are shown to bring about changes in the decay kinetics and the shape of the (D⁰, x) emission line (corresponding to an exciton bound to a shallow neutral donor). This change in the excitonic photoluminescence spectra is caused by dispersion in the exciton binding energy of shallow donors E_D, the dispersion being a result of the influence of the subsystem of deep metastable defects in n-GaAs crystals.     

Screening of excitonic states by low-density 2D charge carriers in GaAs/AlGaAs quantum wells

Screening of excitonic states by a system of 2D electrons (or holes) in GaAs/AlGaAs single quantum wells is studied. With increasing concentration of 2D charge carriers, a threshold-type disappearance of excitonic states is observed in both luminescence and reflectance spectra. The higher the quality of the 2D system, the lower the corresponding threshold concentration. In the best systems, the collapse of excitonic states occurs at unexpectedly low electron densities n _e =5×10⁹ cm^?2, which correspond to the mean dimensionless distance between the particles r _s =8. This value far exceeds the threshold values observed for 3D systems (r _s ≈2), as well as the values obtained for quantum wells in previous studies. The problem of measuring the concentration of low-density 2D charge carriers in photoexcitation conditions is solved by applying the method of optical detection of the dimensional magnetoplasma resonance. This method provides reliable measurements of the density of a 2D system to the values about 10⁹ cm^?2.     

Structural, absorption and optical dispersion characteristics of rhodamine B thin films prepared by drop casting technique

The drop casting technique has been successfully used to deposit highly uniform and good adhesion rhodamine B (Rh.B) thin films. The structural and morphological properties of Rh.B were studied by X-ray diffraction (XRD), and transmission electron microscopy (TEM), respectively. The molecular structure and electronic transitions of Rh.B were investigated by Fourier-transform infrared (FTIR) and ultraviolet-visible-near infrared (UV-VIS-NIR) spectra, respectively. The calculated Stokes shift between the excitation and emission of Rh.B reflects the displacement in potential surface between the ground and the excited states. The important absorption parameters such as molar extinction coefficient (ε_molar), the oscillator strength (f), and the electric dipole strength (q²) were also reported. The analysis of the spectral behavior of the absorption coefficient in the intrinsic absorption region reveals an indirect allowed transition with a band gap of 1.97 eV and associated phonons of 75 meV. The dispersion of the refractive index is discussed in terms of the single oscillator Wemple-Didomenico (WD) model. The single oscillator energy (E_o), the dispersion energy (E_d), the high frequency dielectric constant (ε_∞), the lattice dielectric constant (ε_L) and the ratio of the free charge carrier concentration to the effective mass (N / m^?) were estimated. From the optical constants analysis, the optical conductivity, volume and surface energy loss functions could also be calculated.     

A study of17N levels andT=3/2 multiplets in mass 17 nuclei

Ten states of¹⁷N have been excited via the¹⁸O(d,³He)¹⁷N reaction atE _itd=52 MeV. Thel-transfer values are presented for eight of these states. Based on the subsequent spin and parity assignments severalT=3/2 isobaric multiplets are proposed.     

Effective surface potential method for calculating surface states

A novel formalism (the effective surface potential method) is developed for calculating surface states. Like the Green function method of Kalkstein and Soven and the transfer matrix method of Falicov and Yndurain, the technique is exact for simple tight binding Hamiltonians. As well as offering an alternative viewpoint, the present method provides a simple analytic expression describing the surface states. At each point k_s in the surface Brillouin zone the semi-infinite solid is viewed as an effective linear chain where each element of the chain is a planar layer. The solution to the linear chain problem can be expressed in terms of an effective potential h(k_s,E) at each energy E. A number of examples are presented in detail; “sp^d” Hamiltonians for a linear chain (d = 1), the honeycomb lattice (d = 2), the 111 surface of silicon (d = 3), and a dissected Bethe lattice. Various exact results are given, e.g. the extremities of surface state bands and the surface density of states of p-like (delta function) bands. The results of Kalkstein and Soven for the 100 surface of a simple cubic solid with a perturbation on the surface layer are rederived.     

Angular distributions of electrons in the (γ, 2e) reaction andee-correlations in the atom

The cross sectionsd ³ σ/dE ₁ d n ₁ d n ₂ for the Ar (γ, 2e) Ar⁺⁺ process are calculated on the basis of the diagram approach within the energy intervalω=400–650 eV as functions of the angleθ ₁₂ between final electrons with equal energiesE ₁=E ₂ for several levels of the final Ar⁺⁺ ion. It has been elucidated that the interference of amplitudes corresponding to the interaction in the final and initial states is of prime importance. The angular distributions over the angleθ ₁₂ are very sensitive to the term of the final ion. There are numerous data for the experimental verification of the theory, in particular, for the selection of leading diagrams. The (e, 3e) experiment is also desirable.     

Temperature dependence of the fine structure of the C and E absorption bands in RbMnF3 below the Néel temperature

The variation in the parameters (width, position, intensity) of the fine structure lines in the C[⁶ A _1g → ⁴ A _1g , ⁴ E _g(⁴ G)] and E[⁶ A _1g → ⁴ E _g(⁴ D)] bands in RbMnF₃ with temperature is studied in the temperature range 10–70 K. In the C band, two narrow (<6 cm^?1) lines are are distinguished at distances of 77 and 80 cm^?1 from the exciton line at T = 10 K. The other lines in the C band and all lines in the E band are more than 20 cm^?1 wide. It is demonstrated that the narrow lines become allowed because of the spin-exchange interaction within a long-range magnetic order model and originate from the excitation of exciton-magnon bound states and that the other lines are made allowed by the exchange-vibronic mechanism within a short-range magnetic order model and originate from the excitation of bound states composed of an exciton, magnon, and oddparity phonon. The vibrational replicas of the main exciton-magnon-phonon lines are due to the quadratic vibronic interaction with odd-parity vibrations. Variations of the intensities and widths of the absorption lines with temperature indicate that these parameters are affected by relaxation and delocalization of the bound states.     

Molecular binding states on clean and oxidized surfaces: SiO(g) + W(clean) and SiO(g) + W(oxidized)

The interactions between a molecular beam of SiO(g) and a clean and an oxidized tungsten surface were examined in the surface temperature range 600 to 1700 K by mass spectrometrically determined sticking probabilities, by flash desorption mass spectrometry (FDMS) and by Auger electron spectroscopy (AES). The sticking probability, S, of SiO has been determined as a function of coverage and of surface temperature for the clean and the oxidized tungsten surface. Over the temperature range studied and at zero coverage S = 1.0 and 0.88 for the clean and oxidized tungsten surfaces respectively. The results are consistent with both FDMS and AES. For coverage up to one monolayer there is one major adsorption state of SiO on the clean tungsten surface. FDMS shows that T_m = constant (T_m is the surface temperature at which the desorption rate is maximum) and that desorption from this state is described by a simple first order desorption process with activation energy, E_d = 85.3 kcal mole^?1 and pre-exponential factor, ν = 2.1 × 10¹⁴ sec^?1. AES shows that the 92 eV peak characteristic of silicon dominates. In contrast on the oxidized tungsten surface, T_m shifts to higher temperatures with increasing coverage. The data indicate a first order desorption process with a coverage dependent activation energy. At low coverage (θ ? 0.14) there is an adsorption state with E_d = 120 kcal mole^?1 and ν = 7.6 × 10¹⁹, while at θ = 1.0, E_d = 141 kcal mole^?1. This variation is interpreted as due to complex formation on the surface. AES shows that on oxidized tungsten, in contrast to clean tungsten, the dominant peaks occur at 64 and 78 eV, and these peaks are characteristic of higher oxidation states of silicon. Thus, it is concluded that SiO exists in different binding states on clean and oxidized tungsten surfaces.     

Exciton molecule in semiconductors by phonon-assisted two-photon absorption

Direct creation of bi-excitonic states by photon-assisted two-photon absorption in indirect-gap semiconductors is investigated theoretically. The symmetry of the indirect bi-exciton states and of the phonon used are given for the case of Ge. A numerical application to the case of Si shows that the indirect two-photon absorption coefficient for bi-excitonic α²_I (bi-ex) transitions is several orders of magnitude larger than both indirect two-photon interband, α²_I (band), and excitonic, α²_I (exc), transitions. It becomes smaller than both indirect one-photon interband, α¹_I (band), and excitonic, α¹_I (exc), transitions for available laser intensities. The essential contribution to this enhancement of α²_I (bi-ex) is found to be from the resonance effect in the first process and from both the resonance effect and matrix elements included in the second process.     

Two-nucleon T = 0 transfer reactions in the 0p shell

The ¹⁶O(d, α)¹⁴N, ¹⁴N(d, α)¹²C and ¹²C(d, α)¹⁰B reactions at E_d = 40MeV and the ¹²C(α d)1¹⁴N at E_α = 55 MeV were investigated. A total of seventeen transitions are analysed in terms of one-step, zero-range DWBA calculations, using the two-particle coefficients of fractional parentage obtained from the Cohen-Kurath Op shell wave functions. For most transitions, fair agreement is obtained between experiment and calculation, possible exceptions being the transition to the E_x = 4.43 MeV, J^π = 2⁺ state in ¹²C and to the E_x = 2.15 MeV, J^π = 1⁺ state in ¹⁰B, for which the calculations predict too much L = 0 strength. Where possible, a comparison with previous (p, ³He) results is made. In ¹⁴N a state at E_x = 11.04 MeV was observed for which the values (J_π; T) = (3⁺; 0) are suggested. In ¹²C we found, in addition to the well known T = 0 states, two relatively sharp T = 0 states at E_x = 19.50 ± 0.10 and 20.55 ± 0.10 MeV. The shape and strength of the angular distribution for the transitions to these states can be approximately accounted for by the calculations, although no one-to-one correspondence between observed and predicted levels could be established.     

A study of the121,123Sb(p,d) reactions

Levels of^120,122Sb have been observed using the^121,123Sb(p, d) reactions atE _p = 26.2 MeV. Thirty-two levels of¹²⁰Sb and thirty-four levels of¹²²Sb are observed below 2.0 MeV excitation with an energy resolution better than 25 keV FWHM. Experimental angular distributions were compared to DWBA calculations in order to extractl-transfers and spectroscopic factors. Strong mixing between the 3s _1/2, 2d _3/2, 2d _5/2, and 1g _7/2 neutron orbitals is observed in both nuclei. Nuclear Reactions:^121,123Sb(p, d),E=26.2 MeV; measuredσ(E _d ,θ).^120,122Sb deduced levels,l,J,π, spectroscopic factors. Enriched targets, magnetic spectrometer.     

Valence and inner proton hole states in119in via the (d,3He) reaction

Proton holes states have been studied up toE _x=17 MeV andE _x=3.5 MeV in the¹¹⁹In nucleus via the¹²⁰Sn(d,³He)¹¹⁹In reaction respectively atE _d=108.4 MeV andE _d=51 MeV. DWBA analysis of angular distributions has allowedl attributions for a large number of new levels and the determination of valence and inner hole strength distributions. The first 1g _9/2, 2p _1/2 and 2p _3/2 levels only exhaust 40%, 60% and 32% of their respective sum rule limits. The missing strengths are shared among several low lying levels and significant higher lying contributions. The 1f strength, not identified in the previous experiments is spread fromE _x=1 MeV to about 17 MeV. The low lying levels aroundE _x=2.4 MeV could exhaust some 40% of the 1f _5/2 sum rule. The higher lying strength with a flat maximum aroundE _x=7.5 MeV could account for the 1f _7/2inner hole strength and the missing 1f _5/2 valence strength. The experimental strength functions compare rather well with the predictions of the quasiparticle-phonon model.     

Semiempirical investigation of perturbations of the g factors of electronic-vibrational-rotational levels of hydrogen: III. The r 3Π g − and s 3Δ g − states of the H2 and D2 molecules

The g factors of rovibrational levels of the (4d)r ³Π _g ^? and (4d)s ³Δ _g ^? states of the H₂ and D₂ molecules have been obtained for the first time. These values were found within the nonadiabatic model taking into account the interaction of the 4dπ³Π_g and 4dδ³Δ_g states in the pure precession approximation using semiempirical values of the expansion coefficients of the wave function in an adiabatic basis, which was obtained for the first time for the states of the triplet 4d complex of terms of the hydrogen molecules, and the results of numerical calculation of the overlap integrals of the vibrational wave functions of these states. It is established that the interference effects of the interaction between the 4dπ³Π _g ^? and 4dδ³Δ _g ^? states lead to significant (up to 7 times for the r ³Π _g ^? state of the H₂ and D₂ molecules and 70 and 8 times for the s ³Δ _g ^? state of the H₂ and D₂ molecules, respectively) differences between the nonadiabatic values of the g factors and the corresponding adiabatic values. It is found that the perturbed values of the g factors are much closer to the values corresponding to the case of Hund’s d coupling of angular momenta than to the values corresponding to the b coupling. It is established that the perturbations of the g factors of rovibrational levels of the states of the 4d complex of terms are much greater (up to 2 times for the ³Π _g ^? states and 350 times for the ³Δ _g ^? states) than the perturbations of the same characteristics for the 3d complex of terms of the hydrogen molecule with the same vibrational and rotational quantum numbers.     

The formation of the superheavy hydrogen isotope <Superscript>6</Superscript>H in the absorption of stopped π<Superscript>−</Superscript>-mesons by nuclei

An experimental search for the superheavy hydrogen isotope ⁶H was conducted through studying the absorption of stopped π^?-mesons by ⁹Be and ¹¹B nuclei. A structure in the missing mass spectrum caused by the resonance states of ⁶H was observed in three reaction channels, namely, ⁹Be(π^?, pd)X, ¹¹B(π^?, d³He)X, and ¹¹B(π^?, p⁴He)X. The parameters of the lowest state E_r=6.6±0.7 MeV and Γ=5.5±2.0 MeV (E_r is the resonance energy with respect to the disintegration into the triton and three neutrons) are evidence that ⁶H is a more weakly bound system than ⁴H and ⁵H. Three excited states of ⁶H were observed. Their resonance levels (E_1r=10.7±0.7 MeV, Γ_1r=4±2 MeV, E_2r=15.3±0.7 MeV, Γ _2r=3±2 MeV, and E_3r=21.3±0.4 MeV, Γ_3r=3.5±1.0 MeV) are energetically capable of disintegrating into six free nucleons.