Drift mobility measurements in melt-grown baryum titanate

Drift mobility measurements in melt-grown BaTiO₃ single crystal have been performed using the Spear method. The mobility of (3 ± 1) × 10^?3 cm²V^?1 sec^?1 at room temperature is found to be thermally activated, with an activation energy of 0.15 ± 0.04 eV. Two interpretations are investigated to explain these results: trapping effects due to oxygen vacancies or small polaron hopping.     

Electrical transport measurements in a quasi-onedimensional semiconductor ZrS3

We have used the technique of chemical vapour transport to prepare needle shaped single crystal of ZrS₃. Results of the measurements of d.c. resistivity. Hall coefficient and thermoelectric power of the temperature range 100–500 K are reported. All the samples exhibited semiconducting behaviour with a room temperature resistivity of about 15 Ω-cm and an activation energy of 0.20±0.02 eV. Room temperature thermoelectric power is -850 μVK^?1 and the dominant carriers are electrons. The thermoelectric power varies as (1/T), a behaviour associated with a typical semiconductor. Mobility at low temperatures is limited by ionized impurity scattering and is given by μ₁ = 6.5 × 10^?2T^3/2 cm²V^7-1 sec^?1. At high temperatures, phonon scattering is dominant and the mobility is given by μ₂ = 1.35 × 10⁺⁵T^?32 cm²V^?1 sec^?1.     

Iodine as a donor in CdS

Iodine doped single crystals of CdS were grown from the vapor phase. High temperature Hall effect measurements for the crystals equilibrated with Cd and S₂ vapors at temperatures between 700 and 1000°C gave the free electron concentration as a function of p_Cd or p_S2 and temperature. The results can be explained on the basis of a model in which the CdS is saturated with iodine at low p_Cd (=high p_S2) but unsaturated at high p_Cd.The solubility of iodine in CdS is given by c_t=1·73×10²²p_S2^?1/8 exp (?1·045 eV/kT) cm^?3 atm^?1/8=4·62×10¹⁹p_Cd^1/4 exp (?0·195 eV/kT) cm^?3 atm^1/4The formation of pairs (I_SV_Cd)′ from I_S^· and V_Cd″ is governed by the equilibrium constant K_{P(I, V)}=4 exp (≤1·1 eV/kT)If Cd diffusion occurs primarily by free vacancies, the Cd^* tracer self diffusion leads to a vacancy mobility of (1·2±0·5)×10^?5 cm² sec^?1 at 900°C, in agreement with results reported by Woodbury [12], but (7±3) times larger than reported by Kumar and Kroger [10].     

Hall effect and conductivity in thin films of low temperature chalcocite Cu2S at 20°C as a function of stoichiometry

Thin films of Cu_xS with stoichiometric compositions between Cu_2.000S and Cu_1.995S, i.e. monoclinic chalcocite have been prepared by evaporation of Cu_1.8S and by reactive sputtering deposition from a Cu target in an Ar-H₂S-H₂, atmosphere. The hole concentration c_h and the hole conductivity σ_h have been determined as a function of the composition x of Cu_xS at 20°C using the van der Pauw method for Hall effect and electrical conductivity measurements. From the results the Hall mobility u_h for holes has been calculated. The values for Cu_1.999S are σ_h = 7Ω^?1 cm^?1, c_h = 1.5 × 10¹⁹cm^?3u_h = 3 cm²V^?1sec^?1, those for Cu_1.995S are σ_h=35Ω^?1cm^?1, c_h=1.0 × 10²⁰ cm^?3, u_h=2 cm² V^? sec^?1. Values for intermediate stoichiometries will be reported in the text.     

Raman spectra in doped cadmium oxide

Raman spectra of polycrystalline CdO-samples with electron-densities between 0.8 × 10¹⁹ and 13 × 10¹⁹ cm^?3 and mobilities between 80 and 250 cm²V^?1sec^?1 were observed at 300 and 2 K. Two first order Raman peaks are found at 404 and 345 cm^?1 while the second order spectrum is interpreted as due to the following processes: 2LO(L) near 970 cm^?1, 2LO(X) near 780 cm^?1, 2TO(X) or 2TO(L) at 480 cm^?1 and TA + TO(X) at 270 cm^?1. The 2LO(L)-peak shift to lower energiesand broadens with increasing electron density. This effect cannot be explained by existing theories.     

Transport of excess charge carriers in liquid and solid hydrogen

The temperature dependence of the drift mobility of excess charge carriers in liquid and solid hydrogen has been investigated. Both negative and positive carriers are observed in the liquid with mobilities ～ 5 × 10^-3 cm² V^-1 sec^-1 at 15 K; the mobile carriers in the solid are believed to be negatively Charged with a mobility ～ 6 × 10^-6 cm² V^-1 sec^-1 at 13 K. The mechanisms of charge localization and transport are discussed.     

Diffusion of sulfur in nickel oxide single crystals

The diffusion of sulfur in nickel oxide single crystals has been investigated over the temperature range from 1000 to 1250°C. The measured data were found to deviate markedly from the error function complement dependence for diffusion from a constant source. The deviation is attributed to the migration of sulfur by the “double mode simultaneous diffusion mechanism.” The faster mode diffusion is suggested to be via nickel vacancies, and the slower mode diffusion is suggested to be via oxygen vacancies. The diffusivities for faster mode are given by D_f = 2.94 exp[? 86.6 kcal/RT] cm² sec^?1 and, the slower mode, D_s = 1.08 × 10^?9 exp [?32.8 kcal/RT]cm²sec^?1.     

Zeitliches Abklingen und Anisotropie von p-Terphenyl- undp-Terphenyl-Anthrazen-Mischkristallen bei Beschuß mit α-Teilchen

The time dependence of scintillation intensity from single crystals ofp-terphenyl and mixed crystals ofp-terphenyl and anthracene after bombarding with α-particles was investigated at the two temperaturesT=296 °K andT=92 °K. For the crystals ofp-terphenyl the time dependence of the scintillation anisotropy was also measured. Using the formulas given byKing andVoltz the decay curves ofp-terphenyl were decomposed into two components. Good agreement between experiment and theory was found. The ratio of the prompt intensity to the delayed intensity was determined to be 1∶2 atT=296 °K and 1∶3 atT=92 °K. The diffusion constants for triplet excitons were calculated to beD _T(296 °K)≈10^?5 cm² sec^?1 andD _T(92 °K)≈ 2×10^?6 cm² sec^?1, and the triplet-triplet interaction rate constantsχ _tt(296 °K)≈ 2.5×10^?11 cm³ sec^?1 andχ _tt(92 °K)≈0.5×10^?11 cm³ sec^?1.     

Lithium diffusion in Li<Subscript>3</Subscript>V<Subscript>2</Subscript>(PO<Subscript>4</Subscript>)<Subscript>3</Subscript>-based electrodes: a joint analysis of electrochemical impedance,cyclic voltammetry,pulse chronoamperometry,and chronopotentiometry data

In order to establish the mechanism and to determine the parameters of lithium transport in electrodes based on lithium-vanadium phosphate (Li₃V₂(PO₄)₃), the kinetic model was designed and experimentally tested for joint analysis of electrochemical impedance (EIS), cyclic voltammetry (CV), pulse chronoamperometry (PITT), and chronopotentiometry (GITT) data. It comprises the stages of sequential lithium-ion transfer in the surface layer and the bulk of electrode material’s particles, including accumulation of lithium in the bulk. Transfer processes at both sites are of diffusion nature and differ significantly, both by temporal (characteristic time, τ) and kinetic (diffusion coefficient, D) constants. PITT data analysis provided the following D values for the predominantly lithiated and delithiated forms of the intercalation material: 10^?9 and 3 × 10^?10 cm² s^?1, respectively, for transfer in the bulk and 10^?12 cm² s^?1 for transfer in the thin surface layer of material’s particles. D values extracted from GITT data are in consistency with those obtained from PITT: 3.5–5.8 × 10^?10 and 0.9–5 × 10^?10 cm² s^?1 (for the current and currentless mode, respectively). The D values obtained from EIS data were 5.5 × 10^?10 cm² s^?1 for lithiated (at a potential of 3.5 V) and 2.3 × 10^?9 cm² s^?1 for delithiated (at a potential 4.1 V) forms. CV evaluation gave close results: 3 × 10^?11 cm² s^?1 for anodic and 3.4 × 10^?11 cm² s^?1 for cathodic processes, respectively. The use of complex experimental measurement procedure for combined application of the EIS, PITT, and GITT methods allowed to obtain thermodynamic E,c dependence of Li₃V₂(PO₄)₃ electrode, which is not affected by polarization and heterogeneity of lithium concentration in the intercalate.     

Growth of high-quality ZnO thin films on (11\bar{2}0) a-plane sapphire substrates by plasma-assisted molecular beam epitaxy

High-quality ZnO thin films were grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy. X-ray diffraction and transmission electron microscopy reveal that the ZnO films have high structural quality and an atomically sharp ZnO/Al₂O₃ interface. The full width at half maximum values of the 0002 and $30\bar{3}2$ ZnO ω-rocking curves are 467.8 and 813.5 arc sec for a 600 nm thick ZnO film. A screw dislocation density of 4.35×10⁸ cm^?2 and an edge dislocation density of 3.38×10⁹ cm^?2 are estimated by X-ray diffraction. The surface of the ZnO epilayers contains hexagonal pits, which can be observed in the Zn-polar ZnO. The films have a resistivity of 0.119 Ω?cm, an electron concentration of 6.85×10¹⁷ cm^?3, and a mobility of 76.5 cm²?V^?1?s^?1 at room temperature. Low temperature photoluminescence measurements show good optical properties comparable to ZnO single crystals.     

Dipolar studies in CaF2 with Ce3+

Dielectric relaxation in CaF₂ doped with various amounts of Ce³⁺ (0·01 to 1·0 mol%) was measured. The value of the activation energy for orientation of the dipoles {Ce³⁺-F^? interstitial} was determined to be H = (0·46 ± 0·01) eV. The frequency factor was found to have the value τ_o = (5 ± 1) × 10^?15 sec, giving for the vibrational frequency of the interstitial the value ν_o = (5 ± 1) × 10¹³ sec^?1.The number of dipoles contributing to the dielectric loss peak was determined to be between 10¹⁷ and 8 × 10¹⁷ cm^?3 for the different doping amounts of Ce³⁺. Optical absorption measurements showed the existence of large aggregate bands. We could verify that there exists a second-order reaction of aggregation, which is responsible for the non-linearity found between optical absorption at 305 nm and the nominal concentration of Ce³⁺ in the samples. On the other hand, if we assume that the centers which contribute to optical absorption at 305 nm are those also responsible for the relaxation peak, we find that the number contributing to each process is not the same. We can define an interaction radius R as the minimum separation between two dipoles allowing them to contribute to the relaxation peak. From our experimental data R ? 3·8 × 10^?7 cm.     

Mobility of positrons in silicon

The drift velocity v₊ of positrons in Si has been measured by observing the Doppler shift of the annihilation γ's. The electric field dependence of v₊ yields the positron mobility μ₊: at 80 K μ₊=460±20 cm²V^-1 sec^-1 and at 184 K μ₊=173±15 cm²V^-1 sec^-1.     

A quantum cascade laser-based optical feedback cavity-enhanced absorption spectrometer for the simultaneous measurement of CH4 and N2O in air

Optical feedback cavity-enhanced absorption spectroscopy (OF CEAS) has been demonstrated with a thermoelectrically cooled continuous wave distributed feedback quantum cascade laser (QCL) operating at wavelengths around 7.84 μm. The QCL is coupled to an optical cavity which creates an absorption pathlength greater than 1000 m. The experimental design allows optical feedback of infra-red light, resonant within the cavity, to the QCL, which initiates self-locking at each TEM₀₀ cavity mode frequency excited. The QCL linewidth is narrowed to below the mode linewidth, greatly increasing the efficiency of injection of light into the cavity. At the frequency of each longitudinal cavity mode, the absorption coefficient of an intracavity sample is obtained from the transmission at the mode maximum, measured with a thermoelectrically cooled detector: spectral line profiles of CH₄ and N₂O in ambient air were recorded simultaneously and with a resolution of 0.01386 cm^?1. A minimum detectable absorption coefficient of 5.5×10^?8 cm^?1 was demonstrated after an averaging time of 1 s for this completely thermoelectrically cooled system. The bandwidth-normalised limit for a single cavity mode is 5.6×10^?9 cm^?1?Hz^?1/2 (1σ).     

Charge carrier mobility in crystals of the Pb<Subscript>0.67</Subscript>Cd<Subscript>0.33</Subscript>F<Subscript>2</Subscript> superionic conductor

The frequency (ν = 10^?1–10⁷ Hz) dependences σ(ν) of the conductivity of single crystals of the Pb_0.67Cd_0.33F₂ superionic conductor with the fluorite-type structure (CaF₂) in the temperature range of 132–395 K have been studied. The dependences σ(ν) have been discussed in the framework of the hopping relaxation of ionic carriers, which are mobile anions F^?. From experimental curves σ(ν), the direct-current (dc) conductivity σ_dc and the average charge carrier hopping frequency ν_h have been determined. This has made it possible to calculate the charge carrier mobility μ_mob and charge carrier concentration n _mob in these crystals. At room temperature (293 K), the electrical parameters are σ_dc = 1.6 × 10^?4 S/cm, ν_h = 2.7 × 10⁷ Hz, μ_mob = 2.0 × 10^?7 cm²/(s V), and n _mob = 5.1 × 10²¹ cm^?3.     

The absence of a measurable hall effect in the superionic conductor RbAg4I5

Thin film samples of RbAg₄I₅ have been prepared by evaporation and several of their electrical properties have been determined. The behavior of the conductivity of these films is identical to that found in bulk RbAg₄I₅. An attempt to reproduce the Hall effect results of Kaneda and Mizuki was unsuccessful, and we conclude that the Hall mobility of silver ions in this material is less than 2 × 10^-3cm²/V·sec.     

Supertransferred hyperfine structure in EPR of V4+ ion in Ca3In2Ge3O12 garnet

Interaction of an unpaired electron of the tetrahedral V⁴⁺ ion in Ca₃In₂Ge₃O₁₂ garnet with the four nearest In nuclei gives rise to clearly resolved structure of EPR spectra. We report the observation and analysis of these spectra at three frequencies and at temperature 77 K. The temperature dependence between liquid helium and the room temperatures was also studied. Parameters of the spin Hamiltonian are g_∥=1·8735; g_⊥=1·9825; ∣ ¦A∥|=150·4×10^?4cm^?1; ¦ A_⊥¦ = 36·7 × 10^?4 cm^?1. The supertransferred hyperfine interaction was found to be isotropic, absolute value of the corresponding parameter a is 22·1 × 10^?4 cm^?1.     

Auger recombination of electron-hole drops

Phonon-assisted Auger recombination is calculated for indirect band gap semiconductors in the strongly degenerate case. It follows a reciprocal lifetime τ^?1=Cn² with C=7.19×10³¹ cm⁶ sec^?1 for Si and C=2.94× 10^?31 cm⁶ sec^?1 for Ge. These results are in good agreement with experimental values of the decay of electron-hole drops. Therefore one can conclude that phonon-assisted Auger recombination is the essential nonradiative recombination process in this case.     

Energy spectrum of (Sn0.65Pb0.35)0.95Ge0.05Te solid solutions

The paper reports the study on the resistivity ρ and thermoemf S of the (Sn_0.65Pb_0.35)_0.95Ge_0.05Te solid solution layers. The dependences of ρ and S on the hole concentrations in the range 3×10¹⁹–2×10²¹ cm^?3 exhibit jumps in the resistivity and thermoemf minima at close hole concentrations p ₁≈9×10¹⁹ cm^?3, p ₂≈2.5×10²⁰ cm^?3, and p ₃≈4.5×10²⁰ cm^?3. The observed jumps and minima suggest a complex structure of the valence band and the presence of critical points in the energy spectrum of holes. According to the data for SnTe, the critical points in the energy spectrum at the given hole concentrations are identified as the Σ-extremum, saddle point LΣ, and Δ-extremum, respectively.     

Production and loss of N 2 + , Ne+ and Ne 2 + during the decay period of plasmas produced in neon-nitrogen mixtures

Studies of the time dependencies of the number density of N ₂ ⁺ , Ne⁺ and Ne ₂ ⁺ ions have been made during the decay period of plasmas produced in neon containing various concentrations of nitrogen molecules. Reaction rate constants were obtained for N ₂ ⁺ +N₂+Ne→N ₄ ⁺ +Ne((1.2±0.2)×10^?29 cm⁶ sec^?1) and Ne⁺+N₂→N ₂ ⁺ + Ne ((2.9±0.3) × 10^?12 cm³ sec^?1). The ambipolar diffusion coefficient of N ₂ ⁺ in neon was found to beD _a p _o =350±20 cm² sec^?1 Torr.     

Diffusion constant and surface states of positrons in metals

Positron lifetime spectra and angular correlation curves for seven fine-grained powders of Fe, Co, Ni, and W are analyzed. From the lifetime data, the positron diffusion constant in metals atT=300°K was found to beD ₊=(1.0±0.5)×10^?2 cm² sec^?1. Evidence is presented that positrons are trapped in metal surface states.