Range and range straggling of oxygen implanted into silicon at energies between 2 and 20 MeV

Oxygen profiles in silicon implanted with energies between 2 and 20 MeV by means of a Tandem accelerator have been investigated with a microprobe after bevelling the sample surface. It is shown that the measured profiles correspond to the implantation profiles when the microprobe is operated with a well focussed 2 keV electron beam. The projected ion ranges and the profiles thus obtained are compared with theoretical profiles which have been calculated by a Monte Carlo simulation of the stopping procedure. Takingk=1.30k _LSS for the electronic stopping coefficient in the LSS region up to 2.55 MeV and a constant value of 162 eV/Å for the electronic stopping at higher energies the calculation yields satisfactory range estimates, whereas the range straggling is systematically too small up to 13% in comparison with the experimental results.     

Experimental evidence for the influence of the atomic shell structure on the energy loss of high energy heavy ions in matter

Secondary electron yield measurements for ²⁵²Cf fission products in carbon foils reveal significant deviations for the electronic stopping cross section from semiempirical predictions. This effect may correspond to the Z₁ oscillations observed previously at much lower ion velocities.     

Ion-beam damage and non-radiative exciton decay in LiNbO3

A model to account for the defects generated by ion irradiation in the electronic loss regime, and based on non-radiative decay of self-trapped excitons, is discussed and compared to experiments. It takes into account the competing role of the light-emission (radiative) and defect-creation (non-radiative) decay channels. Calculations are applied to LiNbO₃, a useful electro-optic crystal, where a large number of relevant experimental data are available. The model explains the strong nonlinear dependence of the defect creation rates as a function of electronic stopping power (thresholding behavior). It also satisfactorily accounts for the formation and growth of amorphous layers by ion-beam irradiation at moderate fluences, φ>10¹³ cm^?2. Moreover, it also provides the right trend and reasonable quantitative accordance to data showing the dependence of the track radius on stopping power in single-impact experiments. Finally, the model determines the light emission yield during irradiation. In particular, it predicts that the number of photons emitted by ion impact first increases and then decreases monotonically with increasing electronic stopping power.     

XRD and AFM study of radiation damage induced by swift heavy ions in Y3Al5O12 single crystals

Defects induced in Y₃Al₅O₁₂ single crystals by swift heavy ions are investigated by X-ray diffraction (XRD) and atomic force microscopy. The irradiation was performed at GANIL with 561 MeV ⁵¹Cr, 466 MeV ¹²⁸Te, and 957 MeV ²⁰⁸Pb ions. The XRD data reveal that the lattice strain increases with increasing electronic stopping power, whereas the hillock parameters (height and diameter) are not influenced by the electronic stopping power. According to our experimental data, for the same mean electronic stopping power, the hillock parameters are more pronounced for the lower range in contrast to swelling measurements. The experimental data show a strong increase in the hillock parameter at higher fluence, indicating the amorphization of Y₃Al₅O₁₂ single crystals.     

化合物和合金中离子投影射程分布矩的计算(Ⅱ)——轻离子(Z1≤10)的射程分布矩

本文根据离子在固体材料中电子阻止截面的实验资料,给出了低能Li⁺,Be⁺,B⁺,C⁺,N⁺,O⁺,F⁺,Ne⁺等离子在固体中电子阻止截面S_e的经验公式。这些经验公式既能够很好地反映电子阻止本领的Z₁和Z₂振荡、又能正确地给出S_e随离子能量E的变化关系。用这种以实验为基础的S_e经验公式和符合于WHB势的核散射函数,计数了从H⁺到Ne⁺十种轻离子在非晶Al₂O₃,SiO₂,20/25/Nb不锈钢,LiNbO₃和UO₂等材料中的投影射程分布的一次至三次矩。将计算值与近几年的实验测量及其他人的计算结果进行了比较,在低能端,我们计算的平均投影射程R_p与实验符合得更好。 关键词：     

Electronic stopping power of Ti in C at Bohr velocities — experiment and theories

Ranges of Ti ions, implanted into C with reduced velocities between 0.1 < ν/ν₀ < 5, ν₀=e²/?, have been measured by Rutherford backscattering of a particles. By applying the concept of incremental range we have derived the electronic stopping power,S _e, with a precision of about 1%; the estimated accuracy is 2%. All theories deviate from the experimental results considerably with respect to both magnitude and velocity dependence of S_e.     

Reduction of stopping medium dependence for DSA lifetime measurements

A modification to the Lindhard electronic stopping power formula is proposed which uses the deviation of atom sizes from a characteristic Thomas-Fermi size as a scaling factor. This modification reduces the dependence of DSA lifetime measurements on stopping medium;x² for the 3.34 MeV level in ²²Ne is reduced from 8.1 to 1.4.     

Compton scattering and charge transfer in Er substituted DyAl2

A unique applicability of Compton spectroscopy in probing the electronic states of rare earth aluminides using high energy (662 keV) γ-rays is reported. We have measured first-ever Compton profiles of Dy_1-xEr_xAl₂ (x=0, 0.2) using 20Ci ¹³⁷Cs Compton spectrometer. The charge reorganization in Dy_1−xEr_xAl₂ (x=0, 0.2), on the formation of compound, has been discussed using the valence band Compton profile data. The experimental Compton profile data unambiguously establish charge transfer from Al to Dy (Dy and Er) on formation of x=0.0 (0.2) compound, which is in tune with spin polarized relativistic Korringa–Kohn–Rostoker (SPR-KKR) calculations. A reasonable agreement between SPR-KKR based Compton profiles and the experimental data show applicability of the Green function method in predicting the electronic properties of rare earth compounds.     

Electronic stopping power calculation method for molecular dynamics simulations using local Firsov and free electron-gas models

Molecular dynamics simulations have proven to be accurate in predicting depth distributions of low-energy ions implanted in materials. Free parameters adjusted for every ion-target combination are conventionally used to obtain depth profiles in accordance with the experimental ones. We have previously developed a model for predicting depth profiles in crystalline Si without free parameters. The electronic stopping power was calculated using local total electron density. The model underestimated the stopping in the ?1 1 0? channeling direction. We have now taken a new approach to calculate the electronic stopping power. We use the local valence (3p²) electron density to account for the electronic energy loss between collisions and the Firsov model to account for the electronic energy loss during collision. The lowest electron densities are adjusted with a parametrization that is same for all ions in all implanting directions to correct the problems in the ?1 1 0? channeling direction.     

Generation of amorphous surface layers in LiNbO3 by ion-beam irradiation: thresholding and boundary propagation

The refractive-index profiles induced by high-energy (5 MeV, 7.5 MeV) silicon irradiation in LiNbO₃ have been systematically determined as a function of ion fluence in the range 10¹³–10¹⁵ cm^-2. At variance with irradiations at lower energies, an optically isotropic (‘amorphous’) homogeneous surface layer is generated whose thickness increases with fluence. These results have been associated with an electronic excitation mechanism. They are discussed in relation to the well-documented phenomenon of latent (amorphous) track generation under ion irradiation, requiring a threshold value S_e,th for the electronic stopping power S_e. Our optical data have yielded a value of ≈5 keV/nm for such a threshold, within the range reported by independent single-track measurements. The propagation of the amorphous boundary into the crystal during irradiation indicates that the threshold value decreases on increasing the fluence. Complementary Rutherford backscattering–channeling and micro-Raman (on samples irradiated at 30 MeV) experiments have been performed to monitor the induced structural changes. PACS 61.80.-x; 61.80.Az; 61.80.Jh     

Stopping of slow ions

The 50th anniversary of the appearance of a series of seminal papers by O.B. Firsov is taken as an occasion to have a look at some central aspects of the stopping of slow ions in matter. A brief characterization of Firsov’s model of electronic energy loss is given in comparison with alternative views. The main part of the paper is devoted to central problems such as scaling behavior, Z ₁ and Z ₂ structure, deviations from velocity proportionality, threshold behavior, metal-insulator and gas-solid differences, and correlation between nuclear and electronic stopping.     

Z31 effect on the stopping powers of several metallic elements for 28.8 MeV alpha particles: Deviations of experimental data from theories

Stopping powers of several metallic elements for 28.8 MeV alpha particles have been measured. One fourth of the stopping power for alpha particles is larger than the stopping power for protons of the same velocity. But the differences do not agree with Z³₁ correction theories.     

Mössbauer characteristics of glauconitisation

Using 50 MeV Li^3?+? ion irradiation, the change induced in polycrystalline ferrites Li_0.5(1?+?x)Ti _x Al_0.1Fe_2.4???1.5x O₄ (x = 0.0 to 0.3, step–0.1)[LTAF] and Li_0.5(1?+?x)Ti _x Cr_0.1Fe_2.4???1.5x O₄ (x = 0.0 to 0.3, step–0.1; LTCF) in the electronic stopping power regime is studied. Both the systems were irradiated with the same fluence of 5 × 10¹³ ions/cm². The modifications of the structural and magnetic properties are studied by means of X-ray diffraction (XRD), magnetization, ⁵⁷Fe Mössbauer spectroscopy and low field a. c. susceptibility. The contrast in the role of Ti^4?+? in the presence of Al^3?+? and Cr^3?+? causing the formation of paramagnetic centres through Swift Heavy Ion Irradiation (SHII) induced cation rearrangement has been revealed through the comparative Mössbauer signatures of both the systems. The hyperfine interaction parameters deduced through Mössbauer spectra are also discussed before and after irradiation. The observed reduction in the saturation magnetic moment and Curie temperature after irradiation supports the partial formation of paramagnetic centres and rearrangement of cations in the lattice.     

硼注入砷化镓的电子阻止本领

由文献上R_p的实验数据,用相对校正法和我们编制的LSS方程数值求解程序,算得B⁺→GaAs的电子阻止本领为NS_e(E)=12.4E^0.605,以及B⁺→GaAs的射程统计参数R_p,△R_p和R⊥。 关键词：     

高能铁离子在水介质中核反应过程所导致的能量沉积

在银河宇宙射线中,400MeV/nucleon的铁离子通量相对来讲是较高的,400MeV/nucleon的铁离子对空间辐射引起的损伤和辐射剂量有重要的贡献.本文以Geant4为基础,对400MeV/nucleon Fe离子与物质相互作用后通过核反应过程产生的次级碎片进行模拟分析.对铁离子在水中产生的能量沉积和铁离子与水介质发生核反应后产生的次级碎片的能量沉积进行了模拟研究,得到了通过核反应过程产生次级粒子所导致的剂量贡献. 关键词： 能量沉积 剂量 碎片     

Hole concentration dependence of Mn eg orbital state in bilayer manganites studied by magnetic Compton profile measurement

Magnetic Compton profiles (MCP) have been measured in the [100], [110] and [001] directions on the single crystals of La_2−2xSr_1+2xMn₂O₇ (x=0.30, 0.35 and 0.42) at 10 K. The occupation numbers in t_2g and two e_g type orbitals (x²−y² and 3z²−r²) of Mn-3d state are evaluated from the line-shape analysis of MCP's in the [001] direction by using theoretical profiles derived from the ab initio calculations for (MnO₆)⁸⁻cluster. It has been found that the e_g state is dominated by the x²−y² type orbital at every hole concentration, x, and the 3z²−r² type orbital population decreases with increasing x. From the result, the connections of e_g orbital state with the electron correlation effect, exchange interactions, lattice distortion and electronic inhomogeneity are discussed.     

The low temperature water formation reaction on Pt(111): A static SIMS and TDS study

The formation of water by the reaction of preadsorbed oxygen with hydrogen on a Pt(111) surface has been characterized, using secondary ion mass spectroscopy, below the desorption temperature of H₂O (180 K). The concentration of chemisorbed water was monitored during the reaction by following the SIMS H₃O⁺ signal. Reaction profiles were measured over a temperature range of 120 to 153 K, and an H₂ pressure range of 10^-9 to 10^-6 Torr. Under all conditions the reaction profiles were characterized by an induction time, a region of rapid reaction, and finally a steady decline in the rate. In the rapid region, an overall activation energy of 2.9 ± 0.3 kcalmol^-1 and a half-order H₂ pressure dependence were observed. At low initial oxygen concentrations the induction time increased and the maximum rate decreased. The reaction was slow in the absence of gas phase hydrogen, even when the surface coverage of hydrogen was relatively high. Water and hydrogen thermal desorption spectra, measured after stopping the reaction by removal of gas phase hydrogen, were complex functions of the H₂ exposure, exhibiting several peaks between 170 and 400 K. However, after an exposure large enough to drive the reaction to completion, only one H₂O peak at 173 K and one H₂ peak at 350 K were observed. The results indicate that only a fraction of the total H(a) on the surface was readily available for reaction during H₂ exposure at T ? 153 K. the remainder either recombined to form H₂ or reacted with O(a) during the thermal desorption ramp. There is good evidence for a surface rearrangement during the induction period. A model is proposed which involves the formation of water clusters that accelerate the rate.     

Modification of magnetic anisotropy in metallic glasses using high-energy ion beam irradiation

Heavy ion irradiation in the electronic stopping power region induces macroscopic dimensional change in metallic glasses and introduces magnetic anisotropy in some magnetic materials. The present work is on the irradiation study of ferromagnetic metallic glasses, where both dimensional change and modification of magnetic anisotropy are expected. Magnetic anisotropy was measured using Mössbauer spectroscopy of virgin and irradiated Fe₄₀Ni₄₀B₂₀ and Fe₄₀Ni₃₈Mo₄B₁₈ metallic glass ribbons. 90 MeV ¹²⁷I beam was used for the irradiations. Irradiation doses were 5×10¹³ and 7.5×10¹³ ions/cm². The relative intensity ratios D ₂₃ of the second and third lines of the Mössbauer spectra were measured to determine the magnetic anisotropy. The virgin samples of both the materials display in-plane magnetic anisotropy, i.e., the spins are oriented parallel to the ribbon plane. Irradiation is found to cause reduction in magnetic anisotropy. Near-complete randomization of magnetic moments is observed at high irradiation doses. Correlation is found between the residual stresses introduced by ion irradiation and the change in magnetic anisotropy.     

Optical absorption spectrum of the silver dimer ion: temperature dependence measured by photodissociation and photon-trap spectroscopy

The optical absorption spectrum is reported for the silver dimer cation, Ag₂ ⁺, which is temperature-controlled by buffer-gas cooling in an ion trap. The measurement is performed by two methods, photodissociation and photon-trap spectroscopy. The temperature of the trapped ions is estimated from the profiles of the spectrum. The spectrum is further analyzed to evaluate the bond length, r _e , the vibrational frequency, ω _e , and the anharmonic constant, ω _e x _e , in the first excited electronic state based on the molecular parameters reported for the ground state. Absorption and dissociation cross sections are compared as well.     

Z1 and Z2 variations in the stopping powers of Z1=10 to 18 ions deduced from Dsam lifetime measurements

From lifetime measurements of the ²²Ne(3.26 MeV), ¹³P(2.23 MeV) levels and published data, deviations from theory of the stopping powers for Ne and other ions in many materials have been deduced; they correlate strongly with electron densities deduced from positron lifetimes. The data also indicate that Z₁ deviations for s-d shell nuclei are Z₂ dependent.