共查询到20条相似文献,搜索用时 767 毫秒
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Jianwen Wei 《Solid State Communications》2010,150(15-16):777-781
The tunneling conductance in a normal metal/insulator/metal/ mixed wave superconductor (N/I/N/) junction is calculated, where the N/I/N region is a quantum wire. It is found in the single-mode case that the magnitude of the tunneling conductance near zero voltage is enhanced due to the Andreev bound state by quasiparticles with perpendicular and horizontal injection, and the zero-bias conductance varies with ( is the distance from insulating layer to the interface of N/ mixed wave superconductor). Splitting of the zero-bias conductance peak appears in the quantum point contact tunneling spectra for an N/I/N/ junction, and several subgap peaks can split at the same time. On increasing both and the magnitude ratio of the two components for the mixed wave, the subgap resonances exhibit an alternately high and low behavior inside the energy gap. These results are different from those in d-wave and p-wave superconductor junctions. 相似文献
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《Radiation measurements》2007,42(4-5):644-647
The tetragonal : persistent luminescence materials were prepared by a solid state reaction. The UV excited and persistent luminescence was observed in the green region centred at 535 nm. Both luminescence phenomena are due to the same ion occupying the single site in the host lattice. The codoping usually reduced the persistent luminescence of :, which differs from the : and : materials. Only the ion enhanced slightly the persistent luminescence. With the aid of synchrotron radiation, the band gap energy of : was found to be about 7 eV that is very similar to those of the : materials. Thermoluminescence results suggested that the ions might act as electron traps, but only the TL peaks created by and can be found in the temperature range accessible. Lattice defects (e.g. oxygen vacancies) are also important, since the same main thermoluminescence peak was observed at about with and without codoping. 相似文献
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Rongjin Huang Laifeng Li Zhixiong Wu Xinxin Chu Xiangdong Xu Lihe Qian 《Solid State Communications》2010,150(35-36):1617-1620
Antiperovskite manganese nitrides (, 0.1, 0.15) were prepared and their negative thermal expansion, magnetic and specific heat properties were investigated. A frozen state with a freezing temperature was found at ~207 K in . This indicates that exhibits a spin glass state at low temperatures. We discussed the cause of spin glass behavior and correlated this spin glass behavior with broadening of the negative thermal expansion operation-temperature window of the manganese nitrides . 相似文献
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Negative thermal expansion materials can experience significant stresses when they are used in composites. Under ambient conditions Zr2(WO4)(PO4)2 displays anisotropic negative thermal expansion (NTE) (, , , at 0 GPa). The effect of hydrostatic pressure on its thermal expansion characteristics was investigated by neutron diffraction between 300 and 60 K at pressures up to 0.3 GPa. No phase transitions were observed in the pressure and temperature range examined. The material was found to have a bulk modulus, B0, of 61.3(8) GPa at ambient temperature, and unlike some other NTE materials, pressure had no detectable effect on thermal expansion (, , , at 0.3 GPa). 相似文献
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How well can we manipulate the state of a particle via a discrete-time quantum walk? We show that the discrete-time quantum walk on a one-dimensional infinite chain with coin operators that are independent of the position can only realize product operators of the form , which cannot change the position state of the walker. We present a scheme to construct all possible realizations of all the product operators of the form . When the coin operators are dependent on the position, we show that the translation operators on the position can not be realized via a DTQW with coin operators that are either the identity operator or the Pauli operator . 相似文献
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Luke M. Butcher 《Physics letters. A》2018,382(36):2555-2560
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Manisha Bajpai Kusum Kumari Ritu Srivastava M.N. Kamalasanan R.S. Tiwari Suresh Chand 《Solid State Communications》2010,150(13-14):581-584
The current density–voltage () behavior of polymer PDY 132 thin films has been investigated in hole-only device configuration, viz., ITO/poly(ethylene-dioxthiophene):polystyrenesulphonate (PEDOT:PSS)/PDY 132/Au, as a function of polymer (PDY) film thickness (150 nm and 200 nm) and temperature (290–90 K). Hole current density was found to follow two distinct modes of conduction, (i) low electric field region I: ohmic conduction where slope , and (ii) intermediate and high electric field region II: non ohmic conduction where slope . Region I has been attributed to the transport of intrinsic background charge carriers while region II has been found to be governed by space charge limited currents (SCLC) with hole mobility strongly dependent on electric field and temperature. The respective hole transport parameters determined from the SCLC regime, is , is , and zero field activation energy () of 0.48 eV is obtained. 相似文献
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