Determination of the positron diffusion length in Kapton by analysing the positronium emission

Doppler profile spectroscopy and Compton-to-peak ratio analysis have been used to study the positronium (Ps) emission from the Kapton surface as a function of the positron implantation energy E.Two different positions for the sample have been performed in the experiment.In the first case the sample and the Ge-detector are perpendicular to the positron beam. With this geometry the emission of para-positronium (p-Ps) is detected as a narrow central peak.In the second case, by rotating the sample 45° with respect to the beam axis, the emission of p-Ps is detected as a blue-shifted fly away peak. The implantation of the positrons is described by the Makhov profile, where we used the modified median implantation for polymers as given by Algers et al. [J. Algers, P. Sperr, W. Egger, G. Kögel, F.H.J. Maurer, Phys. Rev. B 67 (2003) 125404].Thermalised positrons can diffuse to the surface and may pick up an electron to be emitted as Ps. We found a thermal and or epithermal positron diffusion length L₊ = 5.43 ± 0.71 nm and L₊ = 5.51 ± 0.28 nm correspondingly for both cases, which is much more than the one found by Brusa et al. [R.S. Brusa, A. Dupasquier, E. Galvanetto, A. Zecca, Appl. Phys. A 54 (1992) 233]. The respective efficiency for the emission of Ps by picking up an electron from the surface is found to be f_pu = 0.247 ± 0.012 and f_pu = 0.156 ± 0.003.     

Construction and timing system of the EPOS beam system

The Forschungszentrum Dresden-Rossendorf provides an intense pulsed 40 MeV electron beam with high brilliance and low emittance (ELBE). The pulse has a length of 1-10 ps and a repetition time of 77 ns, or in slow mode 616 ns. The EPOS system (ELBE Positron Source) generates by pair production on a tungsten converter and a tungsten moderator an intense pulsed beam of mono-energetic positrons. To transport the positrons to the laboratory (12 m) we constructed a magnetic beam guidance system with a longitudinal magnetic field of 75 G. In the laboratory outside the cave, the positron beam is chopped and bunched according to the time structure, because the very sharp bunch structure of the electron pulses is broadened for the positron beam due to transport and moderation.     

Depth resolved Doppler broadening measurement of layered Al-Sn samples

The accumulation of positrons in a two-dimensional layer of tin embedded in aluminum is examined by Doppler broadening spectroscopy (DBS). For this purpose samples are grown out of high purity materials consisting of a step-shaped layer (0.1-200 nm) of tin on a substrate of aluminum and covered by an aluminum layer of constant thickness (200 nm).The positron implantation profile is varied by different positron acceleration energies of up to 15 keV. The pre-thermal implantation profile of the monoenergetic positron beam is examined since the effect of thermal positron diffusion is less significant at tin layers thicker than 50 nm. At thin layers (<50 nm), the positrons greatly accumulate either at the aluminum-tin interface or in the tin layer due to its higher positron affinity compared to aluminum. Thus a very high sensitivity of the measurement for low densities of tin is observed. Consequently from the experimental results, a sensitivity threshold for the detection of a low amount of tin in an aluminum matrix with DBS is determined. The DB results are compared to theory by an approximation for pre-thermal implantation in layered materials.     

Oxidation and thermal reduction of the Cu(1 0 0) surface as studied using positron annihilation induced Auger electron spectroscopy (PAES)

Changes in the surface of an oxidized Cu(1 0 0) single crystal resulting from vacuum annealing have been investigated using positron annihilation induced Auger electron spectroscopy (PAES). PAES measurements show a large increase in the intensity of the annihilation induced Cu M_2,3VV Auger peak as the sample is subjected to a series of isochronal anneals in vacuum up to annealing temperature 300 °C. The intensity then decreases monotonically as the annealing temperature is increased to ∼600 °C. Experimental probabilities of annihilation of surface-trapped positrons with Cu 3p and O 1s core-level electrons are estimated from the measured intensities of the positron annihilation induced Cu M_2,3VV and O KLL Auger transitions. Experimental PAES results are analyzed by performing calculations of positron surface states and annihilation probabilities of surface-trapped positrons with relevant core electrons taking into account the charge redistribution at the surface, surface reconstructions, and electron-positron correlations effects. The effects of oxygen adsorption on localization of positron surface state wave function and annihilation characteristics are also analyzed. Possible explanation is proposed for the observed behavior of the intensity of positron annihilation induced Cu M_2,3VV and O KLL Auger peaks and probabilities of annihilation of surface-trapped positrons with Cu 3p and O 1s core-level electrons with changes of the annealing temperature.     

Temperature-dependent photoluminescence of GaN grown on β-Si3N4/Si (1 1 1) by plasma-assisted MBE

Photoluminescence (PL) of high quality GaN epitaxial layer grown on β-Si₃N₄/Si (1 1 1) substrate using nitridation-annealing-nitridation method by plasma-assisted molecular beam epitaxy (PA-MBE) was investigated in the range of 5-300 K. Crystallinity of GaN epilayers was evaluated by high resolution X-ray diffraction (HRXRD) and surface morphology by Atomic Force Microscopy (AFM) and high resolution scanning electron microscopy (HRSEM). The temperature-dependent photoluminescence spectra showed an anomalous behaviour with an ‘S-like’ shape of free exciton (FX) emission peaks. Distant shallow donor-acceptor pair (DAP) line peak at approximately 3.285 eV was also observed at 5 K, followed by LO replica sidebands separated by 91 meV. The activation energy of the free exciton for GaN epilayers was also evaluated to be ∼27.8±0.7 meV from the temperature-dependent PL studies. Low carrier concentrations were observed ∼4.5±2×10¹⁷ cm⁻³ by measurements and it indicates the silicon nitride layer, which not only acts as a growth buffer layer, but also effectively prevents Si diffusion from the substrate to GaN epilayers. The absence of yellow band emission at around 2.2 eV signifies the high quality of film. The tensile stress in GaN film calculated by the thermal stress model agrees very well with that derived from Raman spectroscopy.     

Performance of a slow positron beam using a hybrid lens design

The University of Hong Kong positron beam employs conventional magnetic field transport to the target, but has a special hybrid lens design around the positron moderator that allows the beam to be focused to millimeter spot sizes at the target. The good focusing capabilities of the beam are made possible by extracting work-function positrons from the moderator in a magnetic field free region using a conventional Soa lens thus minimizing beam canonical angular momentum. An Einzel lens is used to focus the positrons into the magnetic funnel at the end of transportation magnetic field while at the same time bringing up the beam energy to the intermediate value of 7.5 keV. The beam is E × B filtered at this intermediate energy. The final beam energy is obtained by floating the Soa-Einzel system, E × B filter and flight tube, and accelerating the positrons just before the target. External beam steering saddle coils fine tune the position, and the magnetic field around the target chamber is adjusted so as to keep one of the beam foci always on the target. The system is fully computer controlled. Variable energy-Doppler broadened annihilation radiation (VEDBAR) data for a GaN sample are shown which demonstrate the performance of the positron beam system.     

Slow positron beam study of corrosion-related defects in pure iron

Corrosion-related defects of pure iron were investigated by measuring Doppler broadening energy spectra (DBES) of positron annihilation and positron annihilation lifetime (PAL). Defect profiles of the S-parameter from DBES as a function of positron incident energy up to 30 keV (i.e. ∼1 μm depth) were analyzed. The DBES data show that S-parameter increases as a function of positron incident energy (mean depth) after corrosion, and the increase in the S-parameter is larger near the surface than in the bulk due to corrosion. Furthermore, information on defect size from PAL data as a function of positron incident energy up to 10 keV (i.e. ∼0.2 μm depth) was analyzed. In the two-state trapping model, the lifetime τ₂ = 500 ps is ascribed to annihilation of positrons in voids with a size of the order of nanometer. τ₁, which decreases with depth from the surface to the bulk, is ascribed to the annihilation of positrons in dislocations and three-dimensional vacancy clusters. The corroded samples show a significant increase in τ₁ and the intensity I₂, and near the surface the corroded iron introduces both voids and large-size three-dimensional vacancy clusters. The size of vacancy clusters decreases with depth.     

Surface states and annihilation characteristics of positrons trapped at reconstructed semiconductor surfaces

Positron probes of the Si(1 0 0) surface that plays a fundamental role in modern science and technology are capable to non-destructively provide information that is both unique to the probe and complimentary to that extracted using other more standard techniques. This paper presents a theoretical study of positron “image-potential” surface states and annihilation characteristics of surface trapped positrons at the Si(1 0 0) surface. Calculations are performed for the reconstructed Si(1 0 0)-p(2 × 2) surface using the modified superimposed-atom method to account for discrete-lattice effects, and the results are compared with those obtained for the non-reconstructed and reconstructed Si(1 0 0)-(2 × 1) and Si(1 1 1)-(7 × 7) surfaces. The effect of orientation-dependent variations of the atomic and electron densities on localization and extent of the positron surface state wave function at the semiconductor surface is explored. The positron surface state wave function is found to extend into the Si lattice in the regions where atoms are displaced from their ideal terminated positions due to the p(2 × 2) reconstruction. Estimates of the positron binding energy and positron annihilation characteristics reveal their sensitivity to the specific atomic structure of the topmost layers of Si. The observed sensitivity of annihilation probabilities to crystal face indicates that positron spectroscopy techniques could serve as an important surface diagnostic tool capable of distinguishing different semiconductor surfaces and defining their state of reconstruction.     

Slow positrons and thermal Ps production using thin foils

A one-dimensional diffusion model for positrons implanted in Cu and Al single crystal thin foils was solved. The fraction of thermalized positrons reaching the surface was obtained for various film thicknesses as a function of the incident positron energy in a transmission-mode geometry. The results indicate that for foil thicknesses of the order of the diffusion length (1000 Å) the reemission fraction is roughly half the fraction of a semi-infinite crystal. For thicker foils the annihilation of the positrons in the bulk and smearing effects due to a higher implantation energy effectively reduce the surface reemission. In this paper it is shown that thin foils can also be used to efficiently produce low-energy (from thermal to a few eV) Ps beams, physically separated from the primary positron beam.     

Theoretical study of Ni adsorption on the GaN(0 0 0 1) surface

First-principles pseudo-potential calculations within density-functional theory framework are performed in order to study the structural and electronic properties of nickel adsorption and diffusion on a GaN(0 0 0 1)-2×2 surface. The adsorption energies and potential energy surfaces are investigated for a Ni adatom on the Ga-terminated (0 0 0 1) surface of GaN. This surface is also used to study the effect of the nickel surface coverage. The results show that the most stable positions of a Ni adatom on GaN(0 0 0 1) are at the H₃ sites and T₄ sites, for low and high Ni coverage respectively. In addition, confirming previous experimental results, we have found that the growth of Ni monolayers on the GaN(0 0 0 1) surface is possible.     

The characteristics of platinum diffusion in n-type GaN

The electrical and optical characteristics of platinum (Pt) diffusion in n-type gallium nitride (GaN) film are investigated. The diffusion extent was characterized by the SIMS technique. The temperature-dependent diffusion coefficients of Pt in n-GaN are 4.158 × 10⁻¹⁴, 1.572 × 10⁻¹³ and 3.216 × 10⁻¹³ cm²/s at a temperature of 650, 750 and 850 °C, respectively. The Pt diffusion constant and activation energy in GaN are 6.627 × 10⁻⁹ cm²/s and 0.914 eV, respectively. These results indicate that the major diffusion mechanism of Pt in GaN is possibly an interstitial diffusion. In addition, it is also observed that the Pt atom may be a donor because the carrier concentration in Pt-diffused GaN is higher than that in un-diffused GaN. The optical property is studied by temperature-dependent photoluminescence (PL) measurement. The thermal quenching of the PL spectra for Pt-diffused GaN samples is also examined.     

Reflection high-energy positron diffraction pattern from a Si(1 1 1)-(7 × 7) surface

We have investigated the feature of reflection high-energy positron diffraction (RHEPD) pattern from a Si(1 1 1)-(7 × 7) surface. The RHEPD pattern observed in the total reflection condition is quite different from the conventional reflection high-energy electron diffraction (RHEED) pattern. This fact is attributed to the different penetration depths of positrons and electrons. We show that the intensity distribution of RHEPD pattern is reproduced considering the dimer-adatom-stacking fault (DAS) model with optimized atomic positions and scattering potentials of adatoms and rest atoms.     

First positron experiments at NEPOMUC

The in-pile positron source NEutron induced POsitron source MUniCh (NEPOMUC) of the new Munich research reactor FRM-II is now operated at the nominal reactor power of 20 MW. Recently, intensity and positron beam profile measurements were performed at 30 eV and 1 keV, respectively. For this purpose, NaI-scintillators detect the 511 keV γ-radiation of positrons that annihilate at a removable target in the beam line. The beam profile is determined with a micro-channel plate detector and a CCD-camera. In the present arrangement of NEPOMUC's instrumentation the positron beam is connected to a coincident Doppler broadening (CDB) facility and to a positron induced Auger electron spectroscopy (PAES) analysis chamber. First experiments were carried out in order to show the performance of these new spectrometers. An overview of the positron beam facility is given and first experimental results of PAES are presented.     

Surface and bulk investigations at the high intensity positron beam facility NEPOMUC

The NEutron-induced POsitron source MUniCh (NEPOMUC) at the research reactor FRM II delivers a low-energy positron beam (E = 15-1000 eV) of high intensity in the range between 4 × 10⁷ and 5 × 10⁸ moderated positrons per second. At present four experimental facilities are in operation at NEPOMUC: a coincident Doppler-broadening spectrometer (CDBS) for defect spectroscopy and investigations of the chemical vicinity of defects, a positron annihilation-induced Auger-electron spectrometer (PAES) for surface studies and an apparatus for the production of the negatively charged positronium ion Ps⁻. Recently, the pulsed low-energy positron system (PLEPS) has been connected to the NEPOMUC beam line, and first positron lifetime spectra were recorded within short measurement times. A positron remoderation unit which is operated with a tungsten single crystal in back reflection geometry has been implemented in order to improve the beam brilliance. An overview of NEPOMUC's status, experimental results and recent developments at the running spectrometers are presented.     

Structural stability and electronic structure of iron adsorption on the GaN(0 0 0 1) surface

In this work, we have investigated by means of first-principles spin-polarized calculations, the electronic and magnetic properties of iron (Fe) adsorption and diffusion on the GaN(0 0 0 1) surface using density functional theory (DFT) within a plane-wave pseudopotential scheme. In the surface adsorption study, results show that the most stable positions of a Fe adatom on GaN(0 0 0 1) surface are the H3 sites and T4 sites, for low and high Fe coverage respectively. We found that the Fe-H3 2 × 2 surface reconstruction exhibits a half-metallic behavior with a spin band gap and stable ferromagnetism ordering, which is a desirable property for high-efficiency magnetoelectronic devices. In addition, confirming previous experimental results, we found that the iron monolayers present a ferromagnetic order and a large thermal stability. This is interesting from a theoretical point of view and for its technological applications.     

Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy

XPS was used to measure the energy discontinuity in the GaN/diamond heterostructure. The valence band offset (VBO) was determined to be 0.38 ± 0.15 eV and a type-II heterojunction with a conduction band offset (CBO) of 2.43 ± 0.15 eV was obtained.     

Sticking coefficient of nitrogen on solid N2 at low temperatures

The sticking coefficient of nitrogen gas on a thick solid nitrogen film on a copper cold finger was studied at low temperature. For surface temperatures of about 12 K the sticking coefficient is measured to be 99.0 ± 0.6%. Our result implies that it will be possible to make a intense and high brightness slow positron source starting from a small diameter deposit of the gaseous positron emitter ¹³N₂ produced in the reaction ¹²C(d,n)¹³N.     

A portable positron accumulator for antihydrogen formation

A pulsed source of positrons has been developed which may be useful for antihydrogen ( ) formation because it is portable when compared to accelerator-based sources. This positron accumulator uses a Penning-style trap to collect moderated positrons from a radioactive source. The positron pulses may be emitted with repetition rates in the range of 50–1000 Hz, which is appropriate for production schemes involving laser-induced recombination. Bunching techniques may be used to vary the width of the positron pulses over the range 30–120 ns (FWHM) to match the width of the antiproton and/or laser pulses. The efficiency of the accumulator increases from ∼ 10% at 100 Hz to ∼ 50% at 1000 Hz. 250 Hz the efficiency is ∼ 25% and the accumulator has delivered up to 8 e⁺/pulse per mCi of positron activity. This translates into ∼ 1.2 × 10⁵ e⁺/pulse for a 100 Ci⁵⁸Co source.     

Surface layer self diffusion in icosahedral Al-Pd-Mn quasicrystals

The self diffusion of Mn and Pd in a single grain icosahedral Al_69.9Pd_20.5Mn_9.6 quasicrystal has been determined by low energy ion scattering (LEIS). The diffusion was determined by depositing different elements (Pd, Mn) on the surface and measuring the rate of change in surface composition as a function of temperature by LEIS. The surface composition was monitored over the temperature range of 355-575 K for Mn and 440-745 K for Pd and compared to model calculations to allow the activation energy for diffusion to be determined. Activation energies of 0.20 ± 0.01 eV for Mn and 0.64 ± 0.03 eV for Pd have then been measured for self diffusion in i-Al-Pd-Mn, respectively. No deviation from Arrhenius behavior was detected in the temperature range covered by the present experiments. From the low values of activation energy we propose that this range of diffusion is phason related, reflecting the specific nature of the icosahedral structure.     

Emission of positronium in a nanometric PMMA film

Positron beam experiments have been performed for the first time on a self-supporting polymethyl metacrylate (PMMA) film of 310 nm-thick made by spin coating. The positronium (Ps) emission from the PMMA surface is studied as a function of the positron implantation energy by using Doppler profile spectroscopy and Compton-to-peak ratio analysis. When the sample and the Ge-detector are perpendicular to the positron beam, the emission of para-positronium (p-Ps) is detected as a narrow central peak. By rotating the sample 45° with respect to the beam, the emission of p-Ps is detected as a blue-shifted fly-away peak. The bulk Ps fraction, the efficiency for the emission of Ps by picking up an electron from the surface, and the diffusion lengths of positrons (thermal and or epithermal), p-Ps and ortho-positronium (o-Ps) are obtained.