A Landau theory of the Peierls-BCS transition

We introduce a Landau type theory of the Peierls instability-superconductor transition involving two complex order parameters. Under a particular inequality condition among expansion parameters, the theory predicts that the superfluid conductivity should vary as $\text{(T?T}{}_{\mathrm{<mtext>c</mtext>}}\text{)}{}^{\mathrm{<mtext>?3</mtext><mtext>2</mtext>}}$ above the critical region and as $\text{(T}{}^1{}_{\mathrm{<mtext>c</mtext>}}\text{?T)}{}^{\mathrm{<mtext>?3</mtext><mtext>2</mtext>}}$ below the critical region.     

On the mobility of very pure semiconductors at very low temperatures

The mobility μ of a very pure semiconductor at very low temperatures is investigated in terms of a model where electrons are scattered by charged impurities distributed uniformly in space, and the electron-electron interaction is taken into account by the Debye-Hueckel screening in the interaction potential. The equation for the current relaxation rate Γ, derived previously by the proper connected diagram expansion, incorporates the quasi-particle effect in a self-consistent manner. The solution of this equation at high carrier concentrations n yields the so-called Brooks-Herring formula. At lower concentrations, the solution deviates significantly from the latter. The solution is in general smaller than the standard expression for the rate based on the Boltzmann equation; and this is consistent with the existing conductivity data available. At the very low concentrations e.g. n = n₃ = 10¹³cm^?3 or lower for Ge, the mobility calculated is inversely proportional to the square-root of the impurity concentration n_s, and has a $\text{T}{}^{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}$-dependence (T: temperature).

$\text{μ = 0.3597\&z.xl;h}{}^{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}\text{k(k}{}_{\mathrm{B}}\text{T)}{}^{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{(ze)}{}^{\mathrm{?1}}\text{n}{}_{\mathrm{s}}{}^{\mathrm{<mtext>?1</mtext><mtext>2</mtext>}}\text{m}{}^1{}^{\mathrm{<mtext>?3</mtext><mtext>4</mtext>}}$

, where k is the dielectric constant. The conductivity data directly comparable with this formula are not available at present. However, the quasi-particle effect which led to this peculiar concentration-dependence should also show itself in the cyclotron resonance width; there, experiment and theory both show the ${}_{\mathrm{n}}{}_{\mathrm{s}}$-dependence for very pure semiconductors.     

Theory of hopping conduction in two-dimensional impurity band under strong magnetic field

It is shown that the low-temperature conductivity in two-dimensional impurity band of n-type inversion layer under strong magnetic field is $\text{σ}{}_{\mathrm{xx}}\text{(}\text{min}\text{)=σ}{}_0\text{exp}\text{[?(}\text{T}{}_0\text{T}\text{)}{}^{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}\text{]}$. Therefore the effective conductivity of inversion layer $\text{σ}{}_{\mathrm{<mtext>eff</mtext>}}\text{=}\text{σ}{}^2{}_{\mathrm{xy}}\text{σ}{}_{\mathrm{xx}}\text{(}\text{min}\text{)}$ at Shubnikov-de Haas conductivity minima may be very high at low temperature.     

Electrical transport and magnetic properties of Nd2(WO4)3

Measurements of the molar magnetic susceptibility (X_m) of a powdered sample of Nd₂(WO₄)₃ in the temperature range 300–900 K, and the electrical conductivity (σ) and dielectric constant (?$\text{)}\text{?}$ of pressed pellets of the compound in the temperature range 4.2–1180 K are reported. X_m obeys the Curie-Weiss law with a Curie constant C= 3.13 K/mole, a paramagnetic Curie temperature θ= ?60 K and a moment of Bohr magnetons, p= 3.49 for the Nd³⁺ ion. The electrical conductivity data can be explained in terms of the usual band model and impurity levels. Both the σ and ?$\text{\$}\text{?}$data indicate some sort of phase transition round 1025 K. The conductivity follows Mott's law $\text{σ = A exp (?B/T}{}^{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{)}$ in the temperature range $\text{200 < T < 3000}\text{K with}\text{B = 45.00 (}\text{K}\text{)}{}^{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{and}\text{A = 1.38 × 10}{}^{\mathrm{?5}}\text{Ω}{}^{\mathrm{?1}}\text{cm}{}^{\mathrm{?1}}$. The dielectric constant increases slowly up to 600 K, as is usual for ionic solids. The increase becomes much faster above 600 K, which is attributed to space-charge polarization of thermally generated charge carriers.     

Pressure spectroscopy of impurity states in GaSb(Se)

Galvanomagnetic effects and Shubnikov-de Haas oscillations are studied in monocrystalline GaSb(Se) samples ($\text{n}{}_{\mathrm{<mtext>se</mtext>}}\text{= 10}{}^{17}\text{?10}{}^{18}\text{cm}{}^{\mathrm{?3}}$) in magnetic fields up to 50 kOe at temperatures 0,07 K ?T?300 K under pressures p?12 kbar. Pressure spectroscopy has been used to determine the density of states in impurity bands and to investigate the anomalies of the transport properties of Γ-electrons near mobility edge ε_c on both metal and insulator sides.     

Quasiclassical mobility for extrinsic semiconductors

A quasiclassical formulation for mobility in extrinsic semiconductors is presented based on scattering from ionized impurity atoms. Quantum theory enters the otherwise classical Chapman-Enskog expansion of the Boltzmann equation through incorporation of the Thomas-Fermi interaction potential together with the Bom approximation for evaluation of scattering integrals. The following expression results for mobility μ_i, (cgs):

$\text{μ}{}_{\mathrm{i}}\text{3}\text{2}\text{?}{}^2\text{n}{}_{\mathrm{s}}\text{e}{}^3\text{m}{}^1\text{2}\text{2}\text{k}{}_{\mathrm{B}}\text{T}\text{2φ}\text{3}\text{2}\text{1}\text{f(γ)}$

,

$\text{f(γ)=[(1+γ)e}{}^{\mathrm{\gamma }}\text{E}{}_1\text{(γ)?1]}$

, where n_s is impurity concentration, m¹ is effective mass, E₁(γ) is the exponential integral, ? is dielectric constant and γ is dimensionless Thomas-Fermi energy. The structure of the dimensional factor in the preceding expression for μ_i agrees with previous expressions for this parameter.     

On the charged-impurity-limited mobility for a very pure semiconductor

The low temperature mobility μ limited by charged impurities in very pure semiconductors (Ge) is interpreted in terms of the Coulomb collision in medium. The theory yields a peculiar dependence in temperature T and charged impurity concentration $\text{n}{}_{\mathrm{s}}\text{: μ ∞n}{}_{\mathrm{s}}{}^{\mathrm{<mtext>-</mtext><mtext>1</mtext><mtext>2</mtext>}}\text{T}{}^{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}$.     

Comments on D.C. conductivity in amorphous semiconductors

A recent paper in this journal argued that the electrical conductivity arising from thermal hopping between localized states obeys the law in $\text{ln}\text{σ∝ — (T}{}_{\mathrm{<mtext>0</mtext>}}\text{/T)}{}^{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}$, at low temperatures. That result is found to be based on several unjustified assumptions, however, and the correct temperature dependence is $\text{ln}\text{σ∝ — (T}{}_{\mathrm{<mtext>0</mtext>}}\text{/T)}{}^{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}$, as originally proposed by Mott.     

SIMS,AES, work function and flash desorption measurements of the CO adsorption on NiCu alloy surfaces

The chemisorption of CO on Cu, Ni and CuNi alloy surfaces was examined by SIMS, work function measurements and desorption spectroscopy. Using a dynamic SIMS technique the M⁺, M⁺₂, MCO⁺ and M₂CO⁺ emission at different temperatures (100–400 K) was measured as a function of CO exposure. In agreement with the work function and desorption experiments an increase of M⁺ and MCO⁺ emission due to the CO adsorption on Cu was found only at low temperatures (100–190 K). On the Ni surface an increase of Ni⁺, NiCO⁺ and Ni₂CO⁺ was measured up to 400 K. The adsorption of CO on CuNi alloy surfaces — as derived from the work function measurements — can be described by the assumption of two different states of adsorbed carbon monoxide. They can be characterized by different binding energies and from sign and magnitude different work function changes. These states were interpreted as adsorption at Ni or Cu sites of the alloy surfaces, respectively. To a certain extent the SIMS results from the alloy surfaces are incompatible with the work function measurements and desorption spectroscopy and the SIMS studies on the pure metals. A Cu⁺ emission with comparable intensity to the Ni⁺ emission was found for alloys with bulk concentrations of 60 and 40 at% Cu at 300 K. The ratio $\text{Ni}{}^{\mathrm{+}}\text{Cu}{}^{\mathrm{+}}$ was nearly independent of CO pressure and temperature. The measured ratios of $\text{Cu}{}^{\mathrm{+}}{}_2\text{(}\text{Cu}{}^{\mathrm{+}}\text{+}\text{Ni}{}^{\mathrm{+}}\text{)}$, $\text{Ni}{}^{\mathrm{+}}{}_2\text{(}\text{Cu}{}^{\mathrm{+}}\text{+}\text{Ni}{}^{\mathrm{+}}\text{)}$ and $\text{CuNi}{}^{\mathrm{+}}\text{(}\text{Cu}{}^{\mathrm{+}}\text{+}\text{Ni}{}^{\mathrm{+}}\text{)}$ with values about 10^?2 can be explained the basis of a statistical arrangement of Cu and Ni atoms in the alloy surface. The intensities of the MCO⁺ emissions are 10² times smaller than the corresponding values of the pure metals. No emission of M₂CO⁺ was found on CuNi during CO adsorption.     

Electrical and structural properties of iron-doped β-alumina

β-alumina containing 50 w/o Fe exhibits high electronic conductivity when sintered in air but Mössbauer studies have shown the presence of Fe₃O₄. Single-phase β-alumina containing 50 w/o Fe could be prepared by sintering at 1400°C for 4–4.5 h followed by annealing at 1300°C for 96 h encapsulated with coarse β-alumina powder enriched with Na₂CO₃. Mössbauer spectroscopy indicated that all iron was present as Fe(III). Complex-plane impedance data showed a maximum bulk $\text{σ}{}_{\mathrm{25°C}}\text{= 5.56 × 10}{}^{-4}\text{(Ω cm)}{}^{-1}$ with little electronic conductivity. Reduction treatments on Fe-doped β-alumina utilizing H₂:N₂ gas were successful in producing a mixed conductor containing Fe(II) and Fe(III) but also produced a distorted β-alumina lattice. This material exhibited an electronic conductivity $\text{σ}{}_{\mathrm{e,25°C}}\text{= 2 × 10}{}^{-4}\text{(Ω cm)}{}^{-1}$ and a bulk ionic conductivity $\text{σ}{}_{\mathrm{b,25°C}}\text{= 1.35 × 10}{}^{-4}\text{(Ω cm)}{}^{-1}$.     

Hole mobility in p-type HgTe

Experimental data concerning the electrical conduction and Hall coefficient in HgTe samples with acceptor states have been collected and analysed. In the analysis three ranges of acceptor concentration have been distinguished: a low concentration range up to about 5 × 10¹⁵ cm^?3 (pure samples), a high concentration range from 10¹⁶ to 10¹⁸ cm^?3 (p-like samples), and an extremely high concentration range above 10¹⁸ cm^?3 (p-type samples). In pure HgTe samples the holes are in the valence band, in p-like samples the “holes” are in the impurity band, and in p-type HgTe samples the holes are in a strong mixing impurity-valence band. The mobility of holes in the valence band is of the order of $\text{10}{}^5\text{cm}{}^2\text{Vs}$. The mobility of “holes” in the impurity band decreases with increasing impurity concentration from about $\text{5 × 10}{}^3\text{cm}{}^2\text{Vs}$ to $\text{125}\text{cm}{}^2\text{Vs}$. The mobility of holes in p-type HgTe samples is independent of the acceptor concentration and is equal to $\text{125}\text{cm}{}^2\text{Vs}$.     

Chemical diffusion in CoO

Equilibration kinetics of CoO have been studied over the range 1–10^?5 atm oxygen pressure and 900–1300°C by both thermogravimetric and electrical conductivity techniques. The former technique gives excellent agreement with theory based on bulk diffusion and results in a chemical diffusion coefficient given by, $\text{D}\text{?}\text{= 4.8×10}{}^{\mathrm{?3}}\text{exp (?22,500/RT)}$ cm${}^2\text{sec}$. The defect diffusion coefficient (Dinvinco) is equal to $\text{i}\text{?}\text{tD}\text{2}$. No dependence of ?tD on defect concentration was observed. The electrical conductivity technique qualitatively supports these results.     

Electrical conductivity of LiNbWO6

The electrical conductivity of polycrystalline LiNbWO₆, which has a trirutile structure, was studied by the ac impedance method and dc resistance measurement. From the results, the following is clear; LiNbWO₆ is a lithium ionic conductor, its electrical conductivity at 150°C is $\text{1.8 × 10}{}^{\mathrm{?6}}\text{Ω}{}^{\mathrm{?1}}\text{cm}{}^{\mathrm{?1}}$ and the electronic transference number is about 0.03.     

Diffusion and ionic conductivity in sodium beta alumina

Measurements of sodium tracer diffusion (D_t) and ionic conductivity (σ) have been made on the same single crystals of sodium beta-alumina of composition 1.23 Na₂0.11 Al₂O₃. The σ- measurements were made over the temperature 390–660 K using reversible (liquid sodium) electrodes. A fit to the conductivity data gives $\text{σT = 2470}\text{exp}\text{(?0.142}\text{eV}\text{kT}\text{)Ω}{}^{\mathrm{?1}}\text{cm}{}^{\mathrm{?1}}\text{K}$. The D_t, measurements employed two techniques, i.e. nondestructive profiling over the temperature range 210–750 K and cation exchange over the temperature range 505–970 K. The results of the two techniques were in close agreement and can be expressed as $\text{D = 2.12 ×10}{}^{\mathrm{?4}}\text{exp}\text{(?0.169}\text{eV}\text{kT}\text{)}\text{cm}{}^2\text{sec}{}^{\mathrm{?1}}$ for T>520K and $\text{D = 2.45 × 10}{}^{\mathrm{?4}}\text{exp}\text{(?0.164}\text{eV}\text{kT}\text{)}\text{cm}{}^2\text{sec}\text{470}\text{K}$. The “transition” region between 470 and 520 K is not observed in the conductivity measurements. Silver cation exchange was used to determine the number of mobile sodium ions. A comparison of D_t and σ data yielded a Haven ratio that is temperature dependent, ranging in value from 0.45 at 870 K to 0.35 at 370 K.     

Metal-nonmetal transition in solid argon-lanthanum mixtures

A continuous metal-nonmetal transition is observed in solid ArLa mixtures. The d.c. conductivity σ starts at a La atomic fraction c_La ? 0.15 with $\text{σ = 2 × 10}{}^{-2}\text{[Ω-cm]}{}^{-1}$ and increases exponentially with c_La until σ reaches the minimum metallic conductivity $\text{σ}{}_{\min }\text{= 300 ± 100[Ω-cm]}{}^{-1}$ at c_La ? 0.4. The temperature dependence of σ shows variable range hopping between localized states for c>_La ? 0.4 and metallic behaviour for $\text{c}{}_{\mathrm{<mtext>La</mtext>}}\text{? 0.4.}$     

Transport properties of a Van der Waals fluid near the critical point

The behaviour of the transport coefficients of a Van der Waals fluid is studied in the one-phase region along the critical isochore of the liquid-vapour phase transition. When $\text{?=}\text{(T?T}{}_{\mathrm{c}}\text{)}\text{T}{}_{\mathrm{c}}\text{→0}$ the strongest singularity is found in the case of the bulk viscosity (??^?2). The divergence of the heat conductivity is shown to be weaker than $\text{?}{}^{\mathrm{<mtext>?</mtext><mtext>1</mtext><mtext>3</mtext>}}$. The shear viscosity tends to a finite limit. The coefficients of the asymptotic laws are explicitly given. All the results are established in the region where the Ornstein-Zernike theory applies.     

Evidence for stress-induced decoupling of valence bands in GaSb from galvanomagnetic measurements

The behavior of p-GaSb has been examined using uniaxial compressional stresses up to $\text{10}{}^{10}\text{dyn}\text{cm}{}^2$ in the temperature range 50–300°K. Hall effect and resistivity results are interpreted in terms of decoupling of the valence bands, and reduction of the impurity activation energies.     

Absorption spectrum of naphthalene in rare-gas matrices

The absorption spectrum of naphthalene has been studied in rare-gas matrices (RGM). Molar extinction coefficients have been determined and oscillator strengths of various $\text{π}{}^1\text{-π}$ transitions deduced. Bands in the 6.5 to 7.1 eV region, some of which were previously observed and interpreted as members of an impurity exciton (Rydberg) series, have been assigned to a $\text{π}{}^1\text{-π}$ transition. The results are compared with the theoretical prediction.     

Ortho- to para-exciton conversion in Cu2O: A subnanosecond time-resolved photoluminescence study

The photoluminescence spectra of Cu₂0 have been studied as a function of time and temperature. At T ～ 2.5° K it was found that the ls yellow ortho-excitons decay into para-excitons at the rate of $\text{? 2.5 × 10}{}^8\text{sec}{}^{-1}$ while the para-exciton lifetime is much longer and dominated by recombination at defects. As T is raised the rate of conversion of ortho-excitons into para-excitons increases approximately as $\text{T}{}^{\mathrm{<mtext>3</mtext><mtext>2</mtext>}}$. None of the existing theories seem to explain this temperature dependence satisfactorily.     

Angular distribution of photoelectrons from atomic oxygen at 736 Å and 584 Å

The angular distributions of photoelectrons ejected in the process $\text{O}\text{(2}\text{p}{}^4{}^3\text{P}\text{) + hv →}\text{O}{}^{\mathrm{+}}\text{(2}\text{p}{}^3{}^4\text{S}\text{) +}\text{e}$ and $\text{O}{}^{\mathrm{+}}\text{(2}\text{p}{}^3{}^2\text{D}\text{) +}\text{e}$ have been measured at the 736 Å NeI resonance line and at the 584 Å HeI resonance line. The results show good agreement with theory.