UV-induced double injection in α-sulfur single crystals

The I–V characteristics of the UV-induced double injection of carriers into sulfur single crystals are reported. These characteristics display a quadratic behavior as a function of the electric field up to E≈7×10³$\text{Volts}\text{cm}$ where it changes to a cubic law dependence. The V² branch can be accounted for by means of the one carrier space charge limited current. The cube law dependence arises as a result of the recombination limited two-carrier injection according to the model of Lampert and Mark. We estimate values for the common lifetime τ = 4.8×10^?3 sec, and the trap modulated mobility of holes $\text{μ}{}_{\mathrm{<mtext>h</mtext>}}\text{θ}{}_{\mathrm{<mtext>h</mtext>}}\text{=8.9×10}{}^{\mathrm{?6}}\text{cm}{}^2\text{V sec}$.     

New experimental data on the proton electromagnetic polarizabilities

The γp-elastic scattering cross section has been measured in the photon energy range 70–110 MeV. As a monitor process the electron Compton-scattering was simultaneously measured. The values of the electric ($\text{α}$) and magnetic ($\text{β}$) polarizabilities of the proton were obtained from the experimental data: $\text{α}\text{= (10.7 ± 1.1) × 10}{}^{\mathrm{?43}}\text{cm}{}^3$; $\text{β}\text{= (?0.7 ± 1.6) × 10}{}^{\mathrm{?43}}\text{cm}{}^3$.     

Simultaneous diffusion of calcium and strontium in KCl single crystals

Concentration dependent diffusion coefficients for ⁴⁵Ca²⁺ and ⁸⁵Sr²⁺ in purified KCl were measured using a sectioning method. KCl was purified by an ion exchange — Cl₂?HCl process and the crystals grown under $\text{1}\text{6}$ atmosphere of HCl. The tracers were purified on small disposable ion exchange columns to remove precessor and daughter impurities prior to use in a diffusion anneal. Isothermal diffusion anneals were made in the temperature range from 451% to 669%C. At temperatures above 580%C (the lowest melting eutectic in this system) diffusion was from a vapor source: below 580%C surface depositied sources were used. The saturation diffusion coefficients. enthalpies and entropies of impurity-vacancy associations were calculated using the common ion model for simultaneous diffusion of divalent ions in alkali halides. In KCl the saturation diffusion coefficients D_S(ca) and D_s(Sr) are given by

$\text{D}{}_{\mathrm{s}}\text{(Ca) = 9.93 × 10}{}^{\mathrm{?5}}\text{exp(?0.592}\text{eV}\text{kT}\text{)}\text{cm}{}^2\text{sec}$

(1) and

$\text{D}{}_{\mathrm{s}}\text{(Sr) = 1.20 × 10}{}^{\mathrm{?3}}\text{exp(?0.871}\text{eV}\text{kT}\text{)}\text{cm}{}^2\text{sec}$

(2) for calcium and strontium, respectively. The Gibbs free energy of association of the impurity vacancy complex in KCl for calcium can be represented by

$\text{Δg(Ca) = ?-0.507 eV + (2.25 × 10}{}^{\mathrm{?4}}\text{eV}\text{\%K}\text{)T}$

(3) and that for strontium by

$\text{Δg(Sr) = ?0.575 eV + (2.90 × 10}{}^{\mathrm{?4}}\text{eV}\text{\%K}\text{)T}$

. (4)     

Chemical diffusion in CoO

Equilibration kinetics of CoO have been studied over the range 1–10^?5 atm oxygen pressure and 900–1300°C by both thermogravimetric and electrical conductivity techniques. The former technique gives excellent agreement with theory based on bulk diffusion and results in a chemical diffusion coefficient given by, $\text{D}\text{?}\text{= 4.8×10}{}^{\mathrm{?3}}\text{exp (?22,500/RT)}$ cm${}^2\text{sec}$. The defect diffusion coefficient (Dinvinco) is equal to $\text{i}\text{?}\text{tD}\text{2}$. No dependence of ?tD on defect concentration was observed. The electrical conductivity technique qualitatively supports these results.     

Hole mobility in p-type HgTe

Experimental data concerning the electrical conduction and Hall coefficient in HgTe samples with acceptor states have been collected and analysed. In the analysis three ranges of acceptor concentration have been distinguished: a low concentration range up to about 5 × 10¹⁵ cm^?3 (pure samples), a high concentration range from 10¹⁶ to 10¹⁸ cm^?3 (p-like samples), and an extremely high concentration range above 10¹⁸ cm^?3 (p-type samples). In pure HgTe samples the holes are in the valence band, in p-like samples the “holes” are in the impurity band, and in p-type HgTe samples the holes are in a strong mixing impurity-valence band. The mobility of holes in the valence band is of the order of $\text{10}{}^5\text{cm}{}^2\text{Vs}$. The mobility of “holes” in the impurity band decreases with increasing impurity concentration from about $\text{5 × 10}{}^3\text{cm}{}^2\text{Vs}$ to $\text{125}\text{cm}{}^2\text{Vs}$. The mobility of holes in p-type HgTe samples is independent of the acceptor concentration and is equal to $\text{125}\text{cm}{}^2\text{Vs}$.     

High resolution studies of NiSi2 ultrathin film formation by ion scattering and cross-section tem

Ultrathin epitaxial NiSi₂ films (0–40 Å) have been grown on Si(111) surfaces. Medium energy ion shadowing and blocking has been used to determine the orientation, morphology and interfacial order of these films. For the whole coverage range studied ((0–1) × 10¹⁶ Ni $\text{atoms}\text{cm}{}^2$) the films are found to be rotated 180° about the surface normal with respect to the Si(111) substrate. Using the high depth resolution of the technique the annealed films are shown to consist initially of islands, which coalesce into continuous films for coverages above ≈ 5 × 10¹⁵ Ni $\text{atoms}\text{cm}{}^2$. High resolution cross-section transmission electron microscopy shows the NiSi₂Si interface to be atomically abrupt. This interface has been probed directly using the ion channeling technique, and the number of disordered Ni atoms at the interface is found to be less than 7.5 × 10¹³$\text{atoms}\text{cm}{}^2$.     

Static structure factor of gaseous helium

The static structure factor of helium gas has been measured at densities of 3.45 × 10^?3, 2.66 × 10^?3 and $\text{1.95 × 10}{}^{\mathrm{?3}}\text{moles}\text{cm}{}^3$ at a temperature of 4.995 K. The results are in qualitative agreement with the limited theoretical work available.     

A study of valency changes of vanadium ions in Al2O3 by γ irradiation

The effect of γ irradiation at 300 K on the concentrations of vanadium ions V³⁺, V⁴⁺ and V²⁺ in Al₂O₃ has been studied quantitatively, using three techniques: optical absorption (V³⁺), low temperature thermal conductivity measurements (V⁴⁺) and EPR (V²⁺). Several single crystals of Al₂O₃ doped with vanadium in a large range of concentration $\text{(2.8 × 10}{}^{18}\text{? 1.3 × 10}{}^{20}\text{at.}\text{cm}{}^3\text{)}$ have been measured. The evolution of the respective concentrations by γ irradiation as a function of the total vanadium content C is quite different in the two regions $\text{C< 1.2 × 10}{}^{19}\text{at.}\text{cm}{}^3$ and C larger than this value. A consistent analysis of the results has nevertheless been achieved, leading to the determination of the absolute concentrations of the three ions in the as-received and γ irradiated states for all samples with $\text{C<4.2 × 10}{}^{19}\text{at.}\text{cm}{}^3$ (room temperature annealing is observed above this value). The concentrations of V⁴⁺ and V²⁺ ions are always small, but V⁴⁺ ions are more stable: they are present in the as-received state at a level of 1% of the total concentration and a maximum value of $\text{/}\text{?}\text{2.3 × 10}{}^{18}\text{at.}\text{cm}{}^3$ is observed in the γ irradiated state; on the other hand there are less than 4.7 × 10¹⁵V²⁺ ions per cm³ in the as-received state and the maximum value is only $\text{4.2 × 10}{}^{17}\text{at.}\text{cm}{}^3$. Charge transfer between V ions only is not sufficient to explain the experimental results and other defects must be involved in the γ irradiation effect.     

Diffusion and ionic conductivity in sodium beta alumina

Measurements of sodium tracer diffusion (D_t) and ionic conductivity (σ) have been made on the same single crystals of sodium beta-alumina of composition 1.23 Na₂0.11 Al₂O₃. The σ- measurements were made over the temperature 390–660 K using reversible (liquid sodium) electrodes. A fit to the conductivity data gives $\text{σT = 2470}\text{exp}\text{(?0.142}\text{eV}\text{kT}\text{)Ω}{}^{\mathrm{?1}}\text{cm}{}^{\mathrm{?1}}\text{K}$. The D_t, measurements employed two techniques, i.e. nondestructive profiling over the temperature range 210–750 K and cation exchange over the temperature range 505–970 K. The results of the two techniques were in close agreement and can be expressed as $\text{D = 2.12 ×10}{}^{\mathrm{?4}}\text{exp}\text{(?0.169}\text{eV}\text{kT}\text{)}\text{cm}{}^2\text{sec}{}^{\mathrm{?1}}$ for T>520K and $\text{D = 2.45 × 10}{}^{\mathrm{?4}}\text{exp}\text{(?0.164}\text{eV}\text{kT}\text{)}\text{cm}{}^2\text{sec}\text{470}\text{K}$. The “transition” region between 470 and 520 K is not observed in the conductivity measurements. Silver cation exchange was used to determine the number of mobile sodium ions. A comparison of D_t and σ data yielded a Haven ratio that is temperature dependent, ranging in value from 0.45 at 870 K to 0.35 at 370 K.     

Dielectronic satellite spectra from dense laser-produced plasmas

The Lyman-α and adjacent dielectronic satellite lines have been observed in the spectra from laser-irradiated solid targets. In a carbon plasma from a planar target, the relative intensity of the $\text{2p}{}^2{}^3\text{P?1s2p}{}^3\text{P}$ satellite line of C(V) increases as a function of electron density in the range 8 × 10¹⁹ to 2 × 10²⁰ cm^?3. As analysis of a series of imploded microballoon experiments indicates that the $\text{2p}{}^2{}^3\text{P?1s2p}{}^3\text{P}$ and $\text{2s2p}{}^3\text{P?1s2s}{}^3\text{S}$ satellite radiation of Si(XIII) increases for electron densities 1 × 10²²?2 × 10²³ cm^?3. The satellite intensity distributions have been numerically simulated using a rate equation model. It is shown that the carbon and silicon satellite data may be interpreted in a consistent manner, and the extension to higher atomic numbers Z and higher electron densities is considered.     

Electrical conductivity of LiNbWO6

The electrical conductivity of polycrystalline LiNbWO₆, which has a trirutile structure, was studied by the ac impedance method and dc resistance measurement. From the results, the following is clear; LiNbWO₆ is a lithium ionic conductor, its electrical conductivity at 150°C is $\text{1.8 × 10}{}^{\mathrm{?6}}\text{Ω}{}^{\mathrm{?1}}\text{cm}{}^{\mathrm{?1}}$ and the electronic transference number is about 0.03.     

Ortho- to para-exciton conversion in Cu2O: A subnanosecond time-resolved photoluminescence study

The photoluminescence spectra of Cu₂0 have been studied as a function of time and temperature. At T ～ 2.5° K it was found that the ls yellow ortho-excitons decay into para-excitons at the rate of $\text{? 2.5 × 10}{}^8\text{sec}{}^{-1}$ while the para-exciton lifetime is much longer and dominated by recombination at defects. As T is raised the rate of conversion of ortho-excitons into para-excitons increases approximately as $\text{T}{}^{\mathrm{<mtext>3</mtext><mtext>2</mtext>}}$. None of the existing theories seem to explain this temperature dependence satisfactorily.     

Etude de l'autodiffusion dans la phase cubique centree de l'europium et du gadolinium

The self-diffusion coefficient follows a relation of the form : D = (1,0_?0.4^+0.7)exp (?shape=case>34400RT±700)

$\text{cm}{}^2\text{sec}$

for b.c.c. europium D = (1,0_?0.3^+0.5) × 10^?2 exp(?

$\text{32700 ±4000}\text{RT}\text{)}$

$\text{cm}{}^2\text{sec}$

for β-b.c.c. gadolinium.Whereas europium has normal self-diffusion parameters, β-b.c.c. gadolinium must be set in the class of the anomalous b.c.c. rare-earth metals.From these results we conclude that there exists no evident connexion between the instability of the 4f shell and the activation energies anomalously low in the b.c.c. phases of the rare-earth metals.     

Catalytic decomposition of DCOOD studied by reactive scattering of a modulated DCOOD nozzle beam by a polycrystalline platinum surface in ultra high vacuum

The catalytic decomposition of formic acid by a polycrystalline platinum surface was studied by use of modulated molecular beam techniques with mass spectrometric phasesensitive detection. Kinetic information about elementary surface reaction steps was obtained. The formation of CO₂ was found to be a monomolecular, whereas that of D₂ was a bimolecular process. The resulting reaction mechanism may be described as follows:

The rate constants in dependence from the surface temperature t₀ are $\text{η = 7.1 × 10}{}^3\text{exp}\text{(?}\text{9.9}\text{RT}{}_0\text{kcal/mole}\text{),}$ The sticking probability η is provided by the temperature dependence of the intensity of the nonreactive scattered formic acid molecules; the rate constants k_d1 and k_d2 are derived from the measured phase shift between reactive and nonreactive scattered particles. From the phase angle ?, the average surface residence time τ of the intermediates is computed: 3.7 ? τ_DCOO ? 0.41 msec (418 ? T₀ ? 505 K), 31.8 ? τ_D ? 11.6 msec (418 ? T₀ ? 460 K). The difference between τ_D and τ_DCOO is because of the different molecularity of desorption.     

Characteristics of target interaction with high power UV laser radiation

Thermal conduction, mass ablation rate, pressure and preheat were investigated in the interaction of a frequency tripled Nd: glass laser of power 0.-0.2 TW with flat targets. In the range $\text{10}{}^{13}\text{?10}{}^{15}\text{W}\text{cm}{}^2$ for 400 ps pulses we find: (a) thermal conduction may be described by a flux limiter f = 0.04 ± 0.01; (b) the mass abaltion rate depends on the incident laser irradiance as $\text{m}\text{?}\text{= 4.4 × 10}{}^5\text{(I/10}{}^{14}\text{)}{}^{0.53}\text{g cm}{}^{-2}\text{s}{}^{-1}$; (c) the pressure near the ablation surface increases approximately linearly with irradiance and is about 70 Mbar at 10¹⁵ W/cm², and (d) preheat as evidenced by K_α X-ray line emission is significantly lower than in λ = 1.05 μm irradiation.     

Diffusion of water in additively colored potassium iodide crystals

The diffusion of water into additively colored potassium iodide has been studied in the range 15–45°C. Penetration depths, measured by decrease in the F-band absorption, increase with $\text{t}{}^{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}$. The diffusion coefficient, D = 0·58 exp (?6496/T) cm² sec^?1 agrees very well with that determined by other workers. The Henry's law constant, $\text{K =}\text{C}{}_0\text{p}{}_{\mathrm{w}}\text{= 1·3 × 10}{}^9\text{exp}\text{(+4882/T)}\text{cm}{}^{\mathrm{?3}}\text{torr}{}^{\mathrm{?1}}$ implies a water concentration of C₀ ? 10¹⁷ molecules per cm³ in the surface of KI crystals in equilibrium with an environment at 25°C and 35 per cent relative humidity. The large C₀ makes penetration very rapid. Diffusion occurs by interstitial migration of water molecules with an entropy of activation of 9.4 cal/mol deg and an enthalpy of activation of 12·9 kcal/mol.     

Cyclotron resonance of positive holes in AgBr

The first observation of cyclotron resonance of holes in AgBr is reported. Measurements have been made at 34 GHz and 1.7 K. It is shown that the energy surfaces for the hole polaron consist of a set of spheroids oriented along the [111] directions with the mass parameters $\text{m}{}^1{}_{\mathrm{l}}\text{= (1.71±0.06)m}{}_0$ and $\text{m}{}^1{}_{\mathrm{t}}\text{=(0.79±0.01)m}{}_0$. The mobility of the hole polaron is determined to be about $\text{1.5 × 10}{}^5\text{cm}{}^2\text{Vsec}$ at 1.7 K.     

Electron paramagnetic resonance of 61Ni+ in CuGaS2

EPR of ⁶¹Ni⁺ doped CuGaS₂ at 4.2 K leads to the following experimental data: $\text{g = 1.918 ± 0.006 A  < 12 × 10}{}^{-4}\text{cm}{}^{-1}\text{, g}{}_{\mathrm{\perp }}\text{= 2.328±0.006 A}{}_{\mathrm{\perp }}\text{= (65±2) × 10}{}^{-4}\text{cm}{}^{-1}$. High axial field splitting of ²T₂ state stabilizes the center against Jahn-Teller interaction. Covalency reduction factor k is 0.76.     

Pionic and muonic X-ray transitions in liquid helium

Energies and intensities of pionic and muonic X-rays in liquid ⁴He have been measured with a Si (Li) detector. The energy shift due to strong interaction effects of the pionic 1s level in ⁴He was determined to be ?75.7±2.0 eV. The natural line width of this level is 45±3 eV. These values are compared with different theoretical predictions. Cascade calculations, including external Auger effect and sliding transitions, have been performed to reproduce the yields of the muonic and pionic transitions. The pionic 2p level width is deduced: $\text{Γ}{}_{\mathrm{<mtext>2</mtext><mtext>p</mtext>}}\text{= (1.1 ± 0.5) × 10}{}^{12}\text{sec}{}^{\mathrm{?1}}\text{=}\text{(7.2±3.3) × 10}{}^{\mathrm{?4}}\text{eV}$.     

Search for 4n IN π− double charge exchange reactions with heavy nuclei

A search for the existence of the tetraneutron has been made using the double charge exchange reaction $\text{π}{}^{\mathrm{?}}\text{+}{}^{208}\text{Pb}\text{→}{}^4\text{n + π}{}^{\mathrm{+}}\text{+}$ residuals for ⁴n production and the capture process in the same target, ${}^{208}\text{Pb}\text{+}{}^4\text{n}\text{→}{}^{212}\text{Pb}\text{+ γ}$, for the ⁴n detection. No event has been found, giving an upper limit for the product of the production cross section σ_p, the detection cross section σ_d and the ⁴n lifetime τ. Assuming 10^?18 ≦ τ ≦ 10^?9 sec it follows that σ_pσ_dτ ≦ 2.5 × 10^?65cm⁴ sec with 90 % confidence, and for $\text{τ ≧ 10}{}^{\mathrm{?9}}\text{sec}\text{, σ}{}_{\mathrm{<mtext>p</mtext>}}\text{σ}{}_{\mathrm{<mtext>d</mtext>}}\text{≦ 2.5 × 10}{}^{\mathrm{?56}}\text{cm}{}^4$ with 90 % confidence. The magnitude of this value is comparable to the experimental limit of the ⁴He(π^?, π⁺)⁴n cross section.