FWM in silicon nanocrystal-based sandwiched slot waveguides

The observation of four-wave mixing in a 6 mm long sandwiched slot waveguide filled with Si-nc/SiO₂ is reported for optical powers usually employed in telecommunication systems. A −47 dB conversion efficiency is measured in fabricated waveguides for input signal powers around 12 dBm on chip and a waveguide length of 6 mm. Furthermore, the calculated non-linear coefficient is found to be n₂ = 2.67 × 10⁻¹⁷ m²/W. It is also expected that, by using longer waveguides, it would be possible to achieve wavelength conversion.     

Fabrication of waveguides in Yb:YCOB crystal by MeV oxygen ion implantation

Oxygen ions with energies of 6.0 or 3.0 MeV were implanted into y-cut Yb:YCOB crystals at fluences ranging from 5.0 × 10¹³ to 2.0 × 10¹⁵ ions/cm² at room temperature, forming optical planar waveguide structures. Dark-mode line spectroscopy was applied at two wavelengths, 633 and 1539 nm, in various excitation configurations, showing strong enhancement of one of the indices (n_x) in the implanted near surface. The n_x refractive index profile is reconstructed by a reflectivity calculation method and compared to the ion energy losses profiles deduced from SRIM-code simulation. Moreover, the near-field patterns were imaged by an end-fire coupling arrangement.     

Characterization of laser waveguides in Nd:CNGG crystals formed by low fluence carbon ion implantation

We report on Nd:CNGG active planar waveguides produced by 6.0 MeV carbon ion implantation at fluence from 1 × 10¹⁴ ions/cm² to 8 × 10¹⁴ ions/cm². The refractive index profiles, which were reconstructed according to the measured dark mode spectroscopy, showed that the refractive indices had negative changes in the surface region, forming typical barrier waveguide. The width of waveguide structure induced by carbon ion implantation is ∼3.8 μm. The typical barrier-shaped distribution may be mainly due to the nuclear energy deposition of the incident ions into the substrate. By performing a modal analysis on the observed TE modes, it was found that the TE₀ and TE₁ modes can be well-confined inside the waveguide.     

Effect of plasma treatment on interface property of BCN/GaN structure

Interface properties of BCN/GaN metal-insulator-semiconductor (MIS) structures are investigated by X-ray photoelectron spectroscopy (XPS) and capacitance versus voltage (C-V) characteristics measurements. The BCN/GaN samples are fabricated by in situ process consisting of plasma treatment and deposition of BCN film in the plasma-assisted chemical vapor deposition (PACVD) apparatus. XPS measurement shows that the oxide formation at the BCN/GaN interface is suppressed by nitrogen (N₂) and hydrogen (H₂) plasma treatment. The interface state density is estimated from C-V characteristics measured at 1 MHz using Terman method. The minimum interface state density appears from 0.2 to 0.7 eV below the conduction band edge of GaN. The minimum value of the interface state density is estimated to be 3.0 × 10¹⁰ eV⁻¹ cm⁻² for the BCN/GaN structure with mixed N₂ and H₂ plasma treatment for 25 min. Even after annealing at 430 °C for 10 min, the interface state density as low as 6.0 × 10¹⁰ eV⁻¹ cm⁻² is maintained.     

Anisotropic nonlinear optical absorption of gold nanorods in a silica matrix

Nanocomposite films consisting of gold nanospheres or gold nanorods embedded in a silica matrix have been prepared using a hybrid deposition technique consisting of plasma-enhanced chemical vapor deposition of SiO₂ and co-sputtering of gold, followed by annealing at 900 °C. Subsequent irradiation with 30 MeV heavy ions (Cu⁵⁺) was used to form gold nanorods. Linear and nonlinear optical properties of this material are closely related with the surface plasmon resonance in the visible. The nonlinear absorption coefficient (α₂@532 nm) for the films containing gold nanospheres was measured by Z-scan and P-scan techniques, and it was found to be isotropic and equal to −4.8 × 10⁻² cm/W. On the contrary, gold nanorods films exhibited two distinct surface plasmon resonance absorption bands giving rise to a strong anisotropic behavior, namely a polarization-dependent linear absorption and saturable absorption. Z-scan and P-scan measurements using various light polarization directions yielded nonlinear absorption coefficient (α₂@532 nm) values varying from −0.9 × 10⁻² cm/W up to −3.0 × 10⁻² cm/W. Linearity of the P-scan method in the context of nanocomposite saturable absorption is also discussed.     

Efficient blue upconversion emission due to confined radiative energy transfer in Tm-Nd co-doped Ta2O5 waveguides under infrared-laser excitation

Intense blue upconversion emission at 480 nm has been obtained at room temperature in Tm³⁺-Nd³⁺ co-doped Ta₂O₅ channel waveguides fabricated on a Si substrate, when the sample is excited with an infrared laser at 793 nm. The upconversion mechanism is based on the radiative relaxation of the Nd³⁺ ions (⁴F_3/2 → ⁴I_11/2) at about 1064 nm followed by the absorption of the emitted photons by Tm³⁺ ions in the ³H₄ excited state. A coefficient of energy transfer rate as high as 3 × 10⁻¹⁶ cm³/s has been deduced using a rate equation analysis, which is the highest reported for Tm-Nd co-doped systems. The confinement of the 1064 nm emitted radiation in the waveguide structure is the main reason of the high energy transfer probability between Nd³⁺ and Tm³⁺ ions.     

Low temperature fabrication of 5-10 nm SiO2/Si structure using advanced nitric acid oxidation of silicon (NAOS) method

We have developed the advanced nitric acid oxidation of Si (NAOS) method to form relatively thick (5-10 nm) SiO₂/Si structure with good electrical characteristics. This method simply involves immersion of Si in 68 wt% nitric acid aqueous solutions at 120 °C with polysilazane films. Fourier transform infrared absorption (FT-IR) measurements show that the atomic density of the NAOS SiO₂ layer is considerably high even without post-oxidation anneal (POA), i.e., 2.28 × 10²² atoms/cm², and it increases by POA at 400 °C in wet-oxygen (2.32 × 10²² atoms/cm²) or dry-oxygen (2.30 × 10²² atoms/cm²). The leakage current density is considerably low (e.g., 10⁻⁵ A/cm² at 8 MV/cm) and it is greatly decreased (10⁻⁸ A/cm² at 8 MV/cm) by POA at 400 °C in wet-oxygen. POA in wet-oxygen increases the atomic density of the SiO₂ layer, and decreases the density of oxide fixed positive charges.     

Characterization of optical waveguide in Nd: GdVO4 by triple-energy oxygen ion implantation

We report on the optical planar waveguide formation and modal characterization in Nd: GdVO₄ crystals by triple oxygen ion implantation at energies of (2.4, 3.0, and 3.6 MeV) and fluences of (1.4, 1.4, and 3.1)  × 10¹⁴ions/cm². The prism-coupling method is used to investigate the dark-mode property at wavelength of 632.8 nm. The refractive index profiles of the waveguide are reconstructed by an effective refractive index, n_eff method. The modal analysis shows that the fields of TE modes are well restricted in the guiding region, which means the formation of nonleaky waveguide in the crystal.     

Characterization of optical waveguide in Nd: LuVO4 crystals by triple-energy oxygen ion implantation

We report on the optical planar waveguide formation and modal characterization in Nd:LuVO₄ crystals by triple-energy O³⁺-ion implantation at energies of 2.4, 3.0, and 3.6 MeV and doses of 1.4, 1.4, and 3.1×10¹⁴ ions/cm², respectively. The prism-coupling method is used to investigate the dark-mode property at a wavelength of 633 nm. The refractive index profiles of the waveguide are reconstructed by the reflectivity calculation method (RCM). The modal analysis shows that the fields of TE modes are well restricted in the guiding region, which indicates the formation of non-leaky waveguide in the crystal.     

Sorption of selenium(IV) and selenium(VI) onto magnetite

In this work, we have studied the sorption of selenium (⁷⁹Se is one of the main radionuclides in a spent nuclear fuel repository) on magnetite (Fe₃O₄), a mineral present in the near-field of a nuclear waste repository that might represent an important retardation factor for the mobility of many radionuclides.The sorption of both Se(IV) and Se(VI) onto magnetite has been fitted by a non-competitive Langmuir isotherm with Γ_max = (3.13 ± 0.07) × 10⁻⁶ mol m⁻² and K_L = (1.19 ± 0.07) × 10⁶ dm³ mol⁻¹ for Se(IV) and Γ_max = (3.5 ± 0.2) × 10⁻⁶ mol m⁻² and K_L = (3.0 ± 0.1) × 10⁵ dm³ mol⁻¹ for Se(VI).The variation of the sorption of selenium with pH has been modeled using the Triple Layer Surface Complexation Model and the equilibrium constants between selenium and magnetite have been obtained using the FITEQL program. For the case of Se(IV), the best fitting has been obtained using two inner-sphere complexes, FeOHSeO₃²⁻ and FeHSeO₃, while for Se(VI), the best fitting has been obtained considering only an outer-sphere complex, FeOH₂⁺SeO₄²⁻.The surface complexation reactions derived in this work are in agreement with those stated by other authors for sorption of Se(IV) and Se(VI) on hydrous iron oxides.     

Interactions between CdSe/CdS quantum dots and DNA through spectroscopic and electrochemical methods

The interaction of CdSe/CdS quantum dots (QDs) with Herring sperm-DNA (hs-DNA) has been studied by UV-vis spectroscopy and electrochemical method. Cu(phen)₂^2+/1+ (phen = 1, 10-phenanthroline) was used as an indicator for electroactive dsDNA or ssDNA. The apparent association constant has been deduced (4.94 × 10³ M⁻¹ and 2.39 × 10² M⁻¹) from the absorption spectral changes of the dsDNA-QDs and ssDNA-QDs. The results of dissociation method suggest that Cu(phen)₂^2+/1+ is more easily dissociated from dsDNA or ssDNA modified gold electrode (dsDNA/Au or dsDNA/Au) in presence of QDs. The dissociation rate constant (k) of Cu(phen)₂^2+/1+ on dsDNA/Au is 4.48 times higher than that in absence of QDs, while k is 2.34 times higher than that in absence of QDs on ssDNA/Au in Tris buffer with low ionic strength (pH 7.0, 0.5 mM NaCl). The results illuminate that hs-DNA has high affinity for QDs due to electrostatic force, hydrogen bonds, and van der Waals interactions, and the binding force of QDs with dsDNA is stronger than ssDNA.     

Characteristics of sandwich-structured Al2O3/HfO2/Al2O3 gate dielectric films on ultra-thin silicon-on-insulator substrates

Sandwich-structure Al₂O₃/HfO₂/Al₂O₃ gate dielectric films were grown on ultra-thin silicon-on-insulator (SOI) substrates by vacuum electron beam evaporation (EB-PVD) method. AFM and TEM observations showed that the films remained amorphous even after post-annealing treatment at 950 °C with smooth surface and clean silicon interface. EDX- and XPS-analysis results revealed no silicate or silicide at the silicon interface. The equivalent oxide thickness was 3 nm and the dielectric constant was around 7.2, as determined by electrical measurements. A fixed charge density of 3 × 10¹⁰ cm⁻² and a leakage current of 5 × 10⁻⁷A/cm² at 2 V gate bias were achieved for Au/gate stack /Si/SiO₂/Si/Au MIS capacitors. Post-annealing treatment was found to effectively reduce trap density, but increase in annealing temperature did not made any significant difference in the electrical performance.     

Waveguiding and photoluminescence in Er-doped Ta2O5 planar waveguides

The optimization of erbium-doped Ta₂O₅ thin film waveguides deposited by magnetron sputtering onto thermally oxidized silicon wafer is described. Optical constants of the film were determined by ellipsometry. For the slab waveguides, background losses below 0.4 dB/cm at 633 nm have been obtained before post-annealing. The samples, when pumped at 980 nm yielded a broad photoluminescence spectrum (FWHM∼50 nm) centred at 1534 nm, corresponding to ⁴I_13/2-⁴I_15/2 transition of Er³⁺ ion. The samples were annealed up to 600 °C and both photoluminescence power and fluorescence lifetime increase with post-annealing temperature and a fluorescence lifetime of 2.4 ms was achieved, yielding promising results for compact waveguide amplifiers.     

The enhanced conductivity and stability of AZO thin films with a TiO2 buffer layer

Aluminum doped zinc oxide (AZO) films were substitutes of the SnO₂:F films on soda lime glass substrate in the amorphous thin-film solar cells due to good properties and low cost. In order to improve properties of AZO films, the TiO₂ buffer layer had been introduced. AZO films with and without TiO₂ buffer layer were deposited on soda lime glass substrates by r.f. magnetron sputtering. Subsequently, one group samples were annealed in vacuum (0.1 Pa) at 500 °C for 120 s using the RTA system, and the influence of TiO₂ thickness on the properties of AZO films had been discussed. The XRD measurement results showed that all the films had a preferentially oriented (0 0 2) peak, and the intensity of (0 0 2) peak had been enhanced for the AZO films with TiO₂ buffer layer. The resistivity of TiO₂ (3.0 nm)/AZO double-layer film is 4.76×10⁻⁴ Ω cm with the maximum figure merit of 1.92×10⁻² Ω⁻¹, and the resistivity has a remarkable 28.7% decrease comparing with that of the single AZO film. The carrier scattering mechanism of TiO₂ (3.0 nm)/AZO double-layer film had been described by Hall measurement in different temperatures. The average transmittance of all the films exceeded 92% in the visible spectrum. Another group samples were heat treated in the quartz tube in air atmosphere, and the effect of TiO₂ thickness on thermal stability of AZO films had been discussed.     

Optical losses and absorption cross-section of silicon nanocrystals

 Si-rich silicon oxide and SiO₂ (SRSO)/SiO₂ multilayer (ML) samples were grown by reactive magnetron sputtering and then annealed at high temperature to induce the formation of Si-nc with mean size of 3-4 nm and density of about 3.5×10¹⁸ cm⁻³ as deduced from high resolution TEM micrographs. Refractive index and thickness have been determined by m-line measurements, which have shown a birefringence of about 1.5% due to the ML structure. Rib-loaded waveguides have been fabricated to measure propagation losses in the visible-infrared range. The analysis of the different contributions to optical losses such as Mie scattering and scattering due to waveguide roughness has allowed us to isolate the contribution due to the absorption losses and thus to extract the absorption cross-section at different wavelengths. Values of about 3.5×10⁻¹⁸ cm² have been found at 830 nm, increasing with decreasing of the wavelength.     

Annealing effect on planar waveguides in LiNbO3 produced by oxygen ion implantation

We reported on planar waveguides in stoichiometric lithium niobate fabricated by 4.5 MeV oxygen ion implantation with a dose of 6 × 10¹⁴ ions/cm² at room temperature. After ion implantation, these samples were annealed at 240 °C, 260 °C, and 300 °C for 30 min. We investigated annealing effect on the guiding modes and near-field images in the waveguides by prism-coupling method and end-face coupling method respectively. We found that for the extraordinary refractive index a positive alternation occurred in the near-surface region while a negative alternation happened at the end of ion track. Moreover, we measured the transmission spectra for the pure sample and implanted samples before and after annealed at different temperatures, and we observed an absorption peak at ∼480 nm (2.6 eV) in all of these SLN samples.     

Impact of 100 MeV Au on the surface of relaxed Si0.5Ge0.5 alloy films studied by atomic force microscopy

We demonstrate a gradual surface modification process of relaxed Si_0.5Ge_0.5 alloy films by 100 MeV Au beam with fluence varying between 5 × 10¹⁰ and 1 × 10¹² ions/cm² at 80 K by means of atomic force microscopy (AFM). Presence of Ge quantum dots (QDs) was found in the virgin sample. The disappearance of the QDs were noticed when the samples were irradiated with a fluence of 5 × 10¹⁰ ions/cm². Craters were found developing at a fluence of 1 × 10¹¹ ions/cm². Apart from the evolution of the craters, blisters were also detected at a fluence of 1 × 10¹² ions/cm². Variation of the average root mean square value of the surface roughness as a function of fluence was examined.     

Photocarrier transport in iron-doped potassium lithium tantalate niobate studied by time-of-flight measurement

The photocarrier mobility of Fe 0.03 wt%-doped potassium lithium tantalate niobate (K_0.95Li_0.05Ta_0.61Nb_0.39O₃) was investigated by time-of-flight (TOF) measurement. The longitudinal photocarrier response due to pulsed excitation leads to values of the drift mobility of μ_h = 1.45 × 10⁻² cm²/V s for holes, μ_e = 0.325 × 10⁻² cm²/V s for electrons, and a value for the range of holes (μτ)_h = 4.38 × 10⁻⁵ cm²/V at room temperature and at low field 3 KV/cm. The response time of holes and electrons (or the relaxation time) is determined to be 3.02 × 10⁻³ s and 3.74 × 10⁻³ s, respectively. The mobility of holes strongly depends on the field strength, and is observed to decrease with increasing bias field.     

Change of sheet resistance of high purity alumina ceramics implanted by Cu and Ti ions

High purity alumina ceramics (99% Al₂O₃) was implanted by copper ion and titanium ion in a metal vapour vacuum arc (MEVVA) implanter, respectively. The influence of implantation parameters was studied varying ion fluence. The samples were implanted by 68 keV Cu ion and 82 keV Ti ion with fluences from 1 × 10¹⁵ to 1 × 10¹⁸ ions/cm², respectively. The as-implanted samples were investigated by scanning electron microscopy (SEM), glancing X-ray diffraction (GXRD), scanning Auger microscopy (SAM), and four-probe method. Different morphologies were observed on the surfaces of the as-implanted samples and clearly related to implantation parameters. For both ion implantations, the sheet resistances of the alumina samples implanted with Cu and Ti ion fluences of 1 × 10¹⁸ ions/cm², respectively, reached the corresponding minimum values because of the surface metallization. The experimental results indicate that the high-fluence ion implantation resulted in conductive layer on the surface of the as-implanted high purity alumina ceramics.     

Electron beam induced green luminescence and degradation study of CaS:Ce nanocrystalline phosphors for FED applications

Green luminescence and degradation of Ce³⁺ doped CaS nanocrystalline phosphors were studied with a 2 keV, 10 μA electron beam in an O₂ environment. The nanophosphors were synthesized by the co-precipitation method. The samples were characterized using X-ray diffraction, Transmission electron microscopy, Scanning electron microscopy/electron dispersive X-ray spectroscopy and Photoluminescence (PL) spectroscopy. Cubic CaS with an average particle size of 42 ± 2 nm was obtained. PL emission was observed at 507 nm and a shoulder at 560 nm with an excitation wavelength of 460 nm. Auger electron spectroscopy and Cathodoluminescence (CL) were used to monitor the changes in the surface composition of the CaS:Ce³⁺ nanocrystalline phosphors during electron bombardment in an O₂ environment. The effect of different oxygen pressures ranging from 1 × 10⁻⁸ to 1 × 10⁻⁶ Torr on the CL intensity was also investigated. A CaSO₄ layer was observed on the surface after the electron beam degradation. The CL intensity was found to decrease up to 30% of its original intensity at 1 × 10⁻⁶ Torr oxygen pressure after an electron dose of 50 C/cm². The formation of oxygen defects during electron bombardment may also be responsible for the decrease in CL intensity.