The kinetics and thermochemistry of S2F10 pyrolysis

Data on the kinetics of S₂F₁₀ pyrolysis, which gives SF₄ + SF₆, have been reinterpreted to give a value for the equilibrium constant of S₂F₁₀ ? SF₄ + SF₆. This, together with statistical estimates of the entropy and heat capacity of S₂F₁₀, can be used to give for this reaction values of ΔH = 19.7 ± 1.0 kcal/mole and ΔS = 47.6 ± 2 gibbs/mole. ΔH(S₂F₁₀) = –494 kcal/mole. A compatible mechanism is shown to be S₂F₁₀ ? 2SF₅ (fast); 2SF₅ ? SF₆ + SF₄ (slow) with step 2 rate-determining. The overall, best first order rate constant is proposed as k_meas = 10^{17.42–43.0/θ} sec^?1 = K₁k₂, where θ = 2.303RT in kcal/mole. Independent measurements of δH and S° for the SF₅ radical, permits the evaluation of the equilibrium constant K₁ = 10^{8.92–(27.1 ± 6)/θ} l./mole-sec and yields k₂ = 10^{8.50–15.9/θ} l./mole-sec. The observed homogeneous catalysis by NO and CHCl ? CHCl can be explained in terms of a direct abstraction of F from S₂F₁₀ : C + S₂F₁₀ → CF + S₂F₉, followed by S₂F₉ → SF₅ + SF₄ and SF₅ + CF ? SF₆ + C (C ? NO or C₂H₂Cl₂).     

Kinetics of the thermal decomposition of bis-pentafluorosulfur trioxide(SF5O3SF5) in the presence of carbon monoxide

The thermal decomposition of SF₅O₃SF₅ in the presence of CO has been investigated between -9.8°C and + 9.9°C. Besides traces of S₂F₁₀, equimolecular amounts of SF₅O₂SF₅ and CO₂ are formed. The reaction is homogeneous. Its rate is proportional to the pressure of the trioxide and in dependent of the total pressure, the pressure of inert gases and of carbon monoxide: where k = k_1∞ = 10^16.32±0.40 exp(?25,300 ± 500 cal)/RT sec^?1. Consequently, In the presence of oxygen a sensitized CO₂ formation is observed. A mechanism is given which explains the experimental results.     

Mass spectrometric study of SF6-N2 plasma during etching of silicon and tungsten

The reaction products in the SF₆-N₂ mixture rf plasma during reactive ion etching of Si and W have been measured by a mass spectrometric method. Two kinds of cathode materials were used in this work; they were stainless steel for the Si etching, and SiO₂ for the W etching. The main products detected in the etching experiments of Si and W included SF₄, SF₂, SO₂, SOF₂, SOF₄, SO₂F₂, NSF, NF₃, N₂F₄, N_xS_y, NO₂, and SiF₄. In the W etching with the SiO₂ cathode, additional S₂F₂, N₂O, and WF₆ molecules were also obtained. The formation reactions about the novel NSF compound and the sulfur oxyfuorides were discussed.     

Lewis Acid Behavior of SF4: Synthesis,Characterization, and Computational Study of Adducts of SF4 with Pyridine and Pyridine Derivatives

Sulfur tetrafluoride was shown to act as a Lewis acid towards organic nitrogen bases, such as pyridine, 2,6‐dimethylpyridine, 4‐methylpyridine, and 4‐dimethylaminopyridine. The SF₄?NC₅H₅, SF₄?2,6‐NC₅H₃(CH₃)₂, SF₄?4‐NC₅H₄(CH₃), and SF₄?4‐NC₅H₄N(CH₃)₂ adducts can be isolated as solids that are stable below ?45 °C. The Lewis acid–base adducts were characterized by low‐temperature Raman spectroscopy and the vibrational bands were fully assigned with the aid of density functional theory (DFT) calculations. The electronic structures obtained from the DFT calculations were analyzed by the quantum theory of atoms in molecules (QTAIM). The crystal structures of SF₄?NC₅H₅, SF₄?4‐NC₅H₄(CH₃), and SF₄?4‐NC₅H₄N(CH₃)₂ revealed weak S?N dative bonds with nitrogen coordinating in the equatorial position of SF₄. Based on the QTAIM analysis, the non‐bonded valence shell charge concentration on sulfur, which represents the lone pair, is only slightly distorted by the weak dative S?N bond. No evidence for adducts between quinoline or isoquinoline with SF₄ was found by low‐temperature Raman spectroscopy.     

Aspects of the chemistry of SF6/O2 plasmas

The production ofSOF ₄ initiated by the reaction of F atoms withSOF ₂ has been studied in a gas-flow reactor at 295 K for helium bath gas number densities in the range (3.0–27.0)×10¹⁶ cm^–3. The effect of O atoms on the formation ofSOF ₄ has been analyzed in terms of the competing reactionsSOF ₃+FSOF₄ andSOF ₃+OSO ₂ F ₂+F. This analysis leads to the conclusion that the rate coefficients for these two processes are equal within an uncertainty of about 50%. Furthermore, both experiment and calculations indicate that the rate coefficient for reactions between F atoms andSOF ₃ is close to its high-pressure limit under the conditions employed. The experiments set a lower limit on this rate coefficient of 5×10^–11 cm³ s^–1, while calculations based on unimolecular rate theory suggest that it may be greater than 1×10^–10 cm³ s^–1. These results make it clear that the two reactions shown above cannot explain the relative abundances ofSOF ₄ andSO ₂ F ₂ which are observed inSF ₆/O ₂ plasmas. This suggests thatSF ₂ is a major precursor in the sequence of reactions following the dissociation ofSF ₆.     

Electron scattering and dissociative attachment by SF6 and its electrical-discharge by-products

Discrete electron-molecule processes relevant to SF₆ etching plasmas are examined. Absolute, total scattering cross sections for 0.2–12-eV electrons on SF₆, SO₂, SOF₂, SO₂F₂, SOF₄, and SF₄, as well as cross sections for negative-ion formation by attachment of electrons, have been measured. These are used to calculate dissociative-attachment rate coefficients as a function ofE/N for SF₆ by-products in SF₆.     

Spectrokinetic study of SF5 and SF5O2 radicals and the reaction of SF5O2 with NO

UV spectra of SF₅ and SF₅O₂ radicals in the gas phase at 295 K have been quantified using a pulse radiolysis UV absorption technique. The absorption spectrum of SF₅ was quantified from 220 to 240 nm. The absorption cross section at 220 nm was (5.5 ± 1.7) × 10⁻¹⁹ cm². When SF₅ was produced in the presence of O₂ an equilibrium between SF₅, O₂, and SF₅O₂ was established. The rate constant for the reaction of SF₅ radicals with O₂ was (8 ± 2) × 10⁻¹³ cm³ molecule⁻¹ s⁻¹. The decomposition rate constant for SF₅O₂ was (1.0 ± 0.5) × 10⁵ s⁻¹, giving an equilibrium constant of K_eq = [SF₅O₂]/[SF₅][O₂] = (8.0 ± 4.5) × 10⁻¹⁸ cm³ molecule⁻¹. The SF₅ O₂ bond strength is (13.7 ± 2.0) kcal mol⁻¹. The SF₅O₂ spectrum was broad with no fine structure and similar to the UV spectra of alkyl peroxy radicals. The absorption cross section at 230 nm was found to (3.7 ± 0.9) × 10⁻¹⁸ cm². The rate constant of the reaction of SF₅O₂ with NO was measured to (1.1 ± 0.3) × 10⁻¹¹ cm³ molecule⁻¹ s⁻¹ by monitoring the kinetics of NO₂ formation at 400 nm. The rate constant for the reaction of F atoms with SF₄ was measured by two relative methods to be (1.3 ± 0.3) × 10⁻¹¹ cm³ molecule⁻¹ s⁻¹. © 1994 John Wiley & Sons, Inc.     

By-product formation in spark breakdown of SF6/O2 mixtures

The yields of SOF₄, SO₂F₂, SOF₂, and SO₂ have been measured as a function of O₂ content in SF₆/O₂ mixtures, following spark discharges. All experiments were made at a spark energy of 8.7 J/spark, a total pressure of 133 kPa, and for O₂ additions of 0, 1, 2, 5, 10, and 20% to SF₆. Even for the case of no added O₂, trace amounts of O₂ and H₂O result in the formation of the above by-products. However, addition of O₂ significantly increases the yields of SOF₄ and SO₂F₂, while SOF₂ is only slightly affected. The net yields for SOF₄ and SO₂F₂ formation range from 0.18×10^–9 and 0.64×10^–10 mol·J^–1, respectively, at 1% O₂ content to 10.45×10^–9 and 7.15×10^–10 mol·J^–1, respectively, at 20% O₂ content. The mechanism for SOF₄ production appears to involve SF₄, an important initial product of SF₆, as a precursor. Comparison of the SOF₄ and SO₂F₂ yield from spark discharges (arc and corona) shows that the yields from other discharges (arc and corona) shows that the yields can vary by at least three orders of magnitude, depending on the type of discharge and on other discharge parameters.     

A molecular orbital study of bond energies in compounds of sulfur and fluorine

CNDO/2 molecular orbital theory is employed in a study of the binding energies of the molecules SF, SF₂, SF₄, SF₆, their cations and anions, and of the molecules SSF₂, FSSF and S₂F₁₀. Computed energies, when rescaled according to energy partitioning concepts, compare favorably with available experimental data. Ionization energies and electron affinities are calculated for SF, SF₂, SF₄ and SF₆.

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Zusammenfassung Mit Hilfe der CNDO/2 Theorie werden die Bindungsenergien der SF, SF₂, SF₄ und SF₆ Moleküle, von deren positiven und negativen Ionen und von SSF₂, FSSF und S₂F₁₀ berechnet. Die berechneten Energien stimmen gut mit experimentellen Daten überein, wenn sie nach Energieaufteilungsprinzipien wiederberechnet werden. Ferner werden die Ionisierungsenergien und Elektronenaffinitäten für SF, SF₂, SF₄ und SF₆ angegeben.

     

Structural determination of a recalcitrant molecule (S2F4)

The structure determination of S₂F₄ (or SF₃SF), the dimer of SF₂, is made difficult by the large variety of possible conformers and the instability of the compound. An electron diffraction and microwave study succeeded only with the help of a molecular model derived from ab initio calculations, after initial experimental attempts had failed. The force field required for a joint electron diffraction and microwave spectroscopy analysis was calculated by ab initio methods and adjusted to the experimental vibrational frequencies. The structure of S₂F₄ is a trigonal bipyramid with the electron lone pair, the SF group and one fluorine atom in equatorial positions. The SF₃ group is strongly distorted with the two axial SF bonds differing by 0.10 Å and bond angles between axial bonds and equatorial plane of about 77° and 92°, respectively. The geometric structure of S₂F₄ in combination with the ab initio calculations allows one to visualize the dissociation process SF₃SF → 2 SF₂ more clearly.     

Gas-phase combination reactions of SF4 and SF5 with F in plasmas of SF6

Reactions of both SF₄ and SF₅ with F have been studied at 295 K in a gas-flow reactor sampled by a mass spectrometer. The rate coefficient for the combination reaction of F with SF₄ to produce SF₅ was found to increase from (0.9 to 3.0)×10^–12 cm³ s^–1 when the helium bath gas number density was increased from (2 to 26)×10¹⁶ cm^–3. The values obtained here are three orders of magnitude higher than a recent estimate of the high-pressure value based on the modelling of photochemical studies. The experimental results have been compared with RRKM and master equation calculations in which a simplified Gorin model has been used to determine the structure of the transition state. These calculations show that reasonable agreement can be obtained between the experimental data and the calculation if a small (2 KJ/mol) activation energy is assumed. The rate coefficient for the reaction between SF₅ and F to produce SF₆ was found to be independent of helium bath gas number density within the range given above. The value obtained for the rate coefficient was 9×10^–12 cm³ s^–1 with an uncertainty of a factor of 2. This value is close to that of 1×10^–11 cm³ s^–1 computed from the simplified Gorin model and to the value of 1.7×10^–11 cm³ s^–1 deduced from modelling of photochemical experiments.     

Identification of corona discharge-induced SF6 oxidation mechanisms using SF6/18O2/H2 16O and SF6/16O2/H2 18O gas mixtures

The absolute yields of gaseous oxyfluorides SOF₂, SO₂F₂, and SOF₄ from negative, point-plane corona discharges in pressurized gas mixtures of SF₆ with O₂ and H₂O enriched with¹⁸O₂ and H₂ ¹⁸O have been measured using a gas chromatograph-mass spectrometer. The predominant SF₆ oxidation mechanisms have been revealed from a determination of the relative¹⁸O and¹⁶O isotope content of the observed oxyfluoride by-product. The results are consistent with previously proposed production mechanisms and indicate that SOF₂ and SO₂F₂ derive oxygen predominantly from H₂O and O₂, respectively, in slow, gas-phase reactions involving SF₄, SF₃, and SF₂ that occur outside of the discharge region. The species SOF₄ derives oxygen from both H₂O and O₂ through fast reactions in the active discharge region involving free radicals or ions such as OH and O, with SF₅ and SF₄.     

Gas-phase reactions in plasmas of SF6 with O2 in He

Processes which occur in microwave discharges of dilute mixtures of SF₆ and O₂ in He have been examined using a flow reactor sampled by a mass spectrometer. Two classes of experiments were performed. In the first set of experiments, mixtures containing 6×10¹¹ cm^–3 SF₆, 6×10¹⁶ cm^–3 He, and O₂ in the range (0–3.6)×10¹³ cm^–3 were passed through a 20-W 2450-MHz microwave discharge. The gas mixtures arriving at a sample point downstream from the discharge were examined for SF₆, SF₄, SOF₂, SOF₄, SO₂F₂, SO₂, F, and O. In the second class of experiments, rate coefficients were measured for the reactions of SF₄ with O and O₂ and for the reaction of SF with O. The rate coefficient for the reaction of SF with O was found to be (4.2±1.5)×10^–11 cm^–3 s^–1. SF₄ was found to react so slowly with both oxygen atoms and oxygen molecules that only upper limits could be placed on the rate coefficients for these reactions. These values were 2×10^–14 cm³ s^–1 and 5×10^–15 cm³ s^–1 for reactions with O and O₂ respectively. The observed distribution of products from the discharged mixtures is discussed in terms of the measured rate coefficients.     

Chalkogenfluoride in niedrigen Oxydationsstufen. IV. Darstellung und Charakterisierung von reinem S2F4

Lower Chalcogen Fluorides. IV. Preparation and Characterization of Pure S₂F₄ Reactions of S and COS, respectively, with elemental fluorine in a metal high vacuum apparatus give a mixture of SF₆, SF₄, S?SF₂, and S₂F₄. At ? 78°C S₂F₄ can be freed from impurities and isolated in a pure state. Molecular weight, density, melting point, vapour pressure, boiling point, IR, UV-, ¹⁹F-NMR, and mass spectra are presented.     

Negative ion formation in compounds relevant to SF6 decomposition in electrical discharges

Dissociative and nondissociative electron attachment in the electron impact energy range 0–14 eV are reported for SOF₂ SOF₄, SO₂F₂, SF₄, SO₂, and SiF₄ compounds which can be formed by electrical discharges in SF₆. The electron energy dependences of the mass-identified negative ions were determined in a time-of-flight mass spectrometer. The ions studied include F^– and SOF ₂ ^–* from SOF₂; SOF ₃ ^– and F^– from SOF₄; SO₂F ₂ ^–* , SO₂F^–, F ₂ ^– , and F^– from SO₂F₂; SF ₄ ^–* and F^– from SF₄; O^–, SO^–, and S^– from SO₂; and SiF ₃ ^– and F^– from SiF₄. Thermochemical data have been determined from the threshold energies of some of the fragment negative ions. Lifetimes of the anions SOF ₂ ^–* , SO₂F ₂ ^–* , and SF ₄ ^–* are also reported.     

Strukturen von SF5-substituierten Metallkomplexen

Structures of SF₅-substituted Metal Complexes Crystal and molecular structure of [(CO)₆Co₂(F₅S? C?C? SF₅)], [(CO)₄Co? CH₂? SF₅] and [(CO)₅Mn? S? CF?N? SF₅] are reported. Whereas the first two complexes are formed as expected, the latter one is the product of an unclear reaction pathway. In decomposition reactions of [(CO)₄Co? CH₂? SF₅] and [(CO)₅Mn? CH₂? SF₅] H₂C?SF₄ is produced. This allows a one step preparation of this elusive, simplest alkylidine sulfur tetrafluoride.     

Assessing the Viability of Extended Nonmetal Atom Chains in MnF4n+2 (M=S and Se)

Theoretical investigations to evaluate the viability of extended nonmetal atom chains on the basis of molecular models with the general formula M_nF_4n+2 (M=S and Se) and corresponding solid‐state systems exhibiting direct S? S or Se? Se bonding were performed. The proposed high‐symmetry molecules were found to be minima on the potential energy surface for all S_nF_4n+2 systems studied (n=2–9) and for selenium analogues up to n=6. Phonon calculations of periodic structures confirmed the dynamic stability of the ‐(SF₄–SF₄)_∞‐ chain, whereas the analogous ‐(SeF₄–SeF₄)_∞‐ chain was found to have a number of imaginary phonon frequencies. Chemical bonding analysis of the dynamically stable ‐(SF₄–SF₄)_∞‐ structure revealed a multicenter character of the S? S and S? F bonds. A novel definition and abbreviation (ENAC) are proposed by analogy with extended metal atom chain (EMAC) complexes.     

Gas analysis by infrared spectroscopy as a tool for electrical fault diagnostics in SF6 insulated equipment

Infrared spectroscopy shows an enormous potential for the analysis of by-products generated from electrical discharges in sulfur-hexafluoride (SF₆) insulated equipment. Since by-product composition can be related to the fault genesis (arc, partial discharge or corona), the analysis of contaminated SF₆ provides a valuable diagnostic tool. The IR-spectrometric results from discharge experiments are presented, carried out with the application of SF₆ pressures around 300?kPa and an alternating voltage up to 30?kV. Under the discharge conditions used, the main by-products found are the sulfuroxyfluorides SOF₄ and SO₂F₂ with concentrations correlated to the discharge time. Due to its toxicity, special attention is also paid to S₂F₁₀. The experimental conditions and practical aspects for reliable quantitative analysis of reactive species are discussed.     

Chalkogenfluoride in niedrigen Oxydationsstufen. V. Die ungewöhnlichen chemischen Gleichgewichte F3S?SF ⇌ 2SF2 und CF3SF2?SCF3 ⇌ 2 CF3SF

Lower Chalcogen Fluorides V. Unusual Chemical Equilibria F₃S? SF ? 2 SF₂ and CF₃SF₂? SCF₃ ? 2 CF₃SF SF₂ and CF₃SF form unusual chemical equilibria with their dimers F₃SSF and CF₃SF₂ SCF₃ involving two different bonds (SF and SS). The equilibrium between F₃SSF and SF₂ is disturbed by a decomposition reaction of these compounds yielding SF₄ and SSF₂ · K_p (298) = 2.5 · 10^?3atm, ΔH°₂₉₈ = 68.5 kJ/mol for the system F₃SSF ? 2SF₂ and K_p(298) = 1.3 × 10³ atm, δH₂₉₈ = 42.5 kJ/mol for the system CF₃SF₂SCF₃ ? 2CF₃SF have been determined as the equilibrium constants and the dissociation enthalpies. In both systems kinetic hindrance delays the achievement of the equilibrium. The rates for dissociation and decomposition are strongly surface dependent. Under favourable conditions the half-lives at 298 K for the dissociation of F₃SSF and CF₃SF₂SCF₃ are found to be ca. 8 h and ca. 2 h respectively, and for the decomposition of SF₂ and CF₃SF (p ～ 13 mbar) the values are ca. 10 h and 1 year respectively.     

Intensity parameters,radiative transitions and non-radiative relaxations of Ho3+ in various tellurite glasses

The intensity parameters of holmium in sodium, barium and zinc tellurite glasses were obtained from the absorption spectra. Using these parameters and the matrix elements of Ho³⁺, transition probabilities and branching ratios from the excited states (⁵F₄, ⁵S₂), ⁵F₅, ⁵I₄, ⁵I₅ and ⁵I₆ were calculated. Quantum efficiencies for the (⁵F₄, ⁵S₂) state were obtained and the multiphonon transition rates calculated at room temperature. Non-radiative multiphonon relaxations were obtained from the (⁵F₄, ⁵S₂) level. The relaxation increased in the order of zinc, barium, sodium, and is assumed to be dependent on the local site symmetry of Ho³⁺ in glass.