Electronic processes in oxide glassy semiconductors and thin-film structures based on them

The physical nature of electronic processes in oxide glassy semiconductors (OGS) based on V₂O₅ is discussed on the basis of the theory of the small radius polaron (SRP). The most important parameters of the process of charge transfer by polarons are determined from an analysis of the temperature dependence of the static conductivity by mathematical modeling employing general theoretical expressions. A model of coupled SRP, presuming that they are localized by the Coulomb field of the charged defect centers, is proposed for describing the complex of data on the effects of a strong electric field and dielectric relaxation. On the basis of the model expressions describing the dependence of the current density and dielectric constant on the dc electric field strength and also a relation determining the dielectric relaxation time for the given model are obtained. The results of studies of the electric properties of OGS, modified by additions of a second transition-metal oxide, are discussed also.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 18–33, June, 1987.     

Electric field dependence of the Curie temperature and microwave absorption in displacive ferroelectrics with impurities II

Expressions for the complex dielectric constant, microwave absorption and the Curie temperature in doped displacive ferroelectrics, subjected to an external electric field are discussed, using the approach made in our previous study. A cross-term of defect parameters with electric field and anharmonic parameters is obtained. The intrinsic parametersB andC are modified by impurity terms. The qualitativeE ² dependence of tan δ is discussed.     

具有缺陷结构的三角形二维光子晶体结构参量对本征模的影响

通过有限元数值计算得到并图示了具有缺陷结构三角形二维光子晶体本征频率和介质柱半径、晶格常量以及介质柱介电常量之间的关系.利用这些关系可以在一定的范围内增大介质柱半径而相应减小介质柱介电常量,而本征频率基本保持不变.由于光子晶体结构参量的不同,本征模对应的电磁场在晶体中的分布也不同,图示了电场强度的大小在一些结构中的分布.由此可以掌握光子晶体结构参量对缺陷本征模的影响.     

Polaron jump conductivity in films of vitreous oxide semiconductors in an intense DC magnetic field

Experimental data on the field dependence of static conductivity of vitreous oxide semiconductors (VOS) based on V₂O₅ are analyzed. To describe the effects of an intense electric field a model is proposed which assumes localization of small radius polarons (SRP) by the Coulomb field of positively charged defect centers (the bound SRP model). Within the framework of this model an expression is obtained which defines the flux density of charge carriers (J) in an electric field of arbitrary intensity (F), which in the limit of an intense electric field leads to a linear dependence of ln J on F^1/2. With the parameters found for the model the calculated function J(F) agrees well with experimental dependences of current upon F for VOS films in the vanadium-borate system. The most probable nature of defect centers in the given materials is anion (oxygen) vacancies. The results obtained agree with a previous analysis of field dependence of low-frequency dielectric permittivity also based on the bound SRP model.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 95–100, December, 1988.     

A model for the dependence of the dielectric loss factor of a ferroelectric on the microwave signal amplitude

The nonlinear phenomena occurring in ferroelectrics were studied using a model for the dependence of the ferroelectric polarization on the amplitude of the applied field. The inclusion of the static internal defect field made it possible to determine the dependence of the complex permittivity of a ferroelectric on the dc electric field strength. The dependences of the complex permittivity and the dielectric loss factor on the amplitude of microwave oscillations were obtained using the Poynting theorem for harmonic microwave oscillations.     

AC conductivity and dielectric relaxation in Ba(Sm1/2Nb1/2)O3 ceramic

The complex perovskite oxide a barium samarium niobate (BSN) synthesized by solid-state reaction technique has single phase with cubic structure. The scanning electron micrograph of the sample shows the average grain size of BSN∼1.22 μm. The field dependence of dielectric response and loss tangent were measured in the temperature range from 323 to 463 K and in the frequency range from 50 Hz to 1 MHz. The complex plane impedance plots show the grain boundary contribution for higher value of dielectric constant in the low frequency region. An analysis of the dielectric constant (ε′) and loss tangent (tan δ) with frequency was performed assuming a distribution of relaxation times as confirmed by the scaling behaviour of electric modulus spectra. The low frequency dielectric dispersion corresponds to DC conductivity. The logarithmic angular frequency dependence of the loss peak is found to obey the Arrhenius law with an activation energy of 0.71 eV. The frequency dependence of electrical data is also analyzed in the framework of conductivity and electric modulus formalisms. Both these formalisms show qualitative similarities in relaxation times. The scaling behaviour of imaginary part of electric modulus M″ and dielectric loss spectra suggest that the relaxation describes the same mechanism at various temperatures in BSN. All the observations indicate the polydispersive relaxation in BSN.     

一种计算和分析二维光子晶体缺陷模式的方法

通过改进时域有限差分(FDTD)法,计算和分析了二维光子晶体的缺陷模式。运用一维时域有限差分算法和线性插值法在总场散射场(TF-SF)连接边界引入入射平面波,采用完全匹配层(PML)技术对外行波进行了有效吸收。计算和分析结果表明,在光子晶体非对称方向入射的平面波能激发所有的缺陷模式,选取合适的探测点位置收集电场值,经快速傅里叶变换(FFT)能得到所有的共振峰值。另外,采用该方法研究了二维正方介质柱光子晶体缺陷模的共振频率与缺陷介质柱半径和介电常量之间的关系。结果表明通过改变缺陷的半径和介电常量大小可以在光子晶体禁带中一定的范围内调节缺陷模式的共振频率大小。     

用一维光子带隙结构增强硫化镉双光子吸收研究

用真空镀膜方法制备了含有单个CdS缺陷层的具有不同周期和结构参量的TiO2／SiO2一维光子晶体。用抽运一探测技术研究了CdS缺陷层的双光子吸收（TPA）现象。实验结果表明：一维光子晶体中CdS缺陷层的双光子吸收显著增强。不同周期和结构参量的一维光子晶体中CdS缺陷层的双光子吸收系数不同。双光子吸收的增强来源于由光局域化导致的缺陷层的电场强度的增加。缺陷层电场强度与一维光子晶体的结构有关,如周期,光子带隙的位置与宽度及缺陷模式等因素都会影响缺陷层电场强度。采用四分之一波长的高低折射率介质层和与入射波长匹配的缺陷模可以得到最大的缺陷层电场强度。     

Dielectric response enhancement in the current carrying CDW state

The dc electric field dependence of the low frequency dielectric constant was investigated in the linear chain compound orthorhombic TaS₃. While the dielectric constant is barely effected by an applied dc field below the threshold field of the nonlinear conduction, in the current carrying state a large enhancement is observed. Inductive response at the narrow band noise frequency was also detected.     

Dielectric relaxation in aqueous solutions and suspensions I. Solutions and suspensions

The dielectric constants and dielectric loss factors of aqueous solutions and suspensions are measured as a function of the specific electrical conductivity, temperature, and electric field frequency. The dispersion of the dielectric constant and the dielectric loss factor in solutions is explained by the formation of a electric double layer at the electrodes and the redistribution of the electric field between the region adjoining the electrodes and the remaining volume of the measuring cell. An equivalent-circuit calculations for suspensions displays acceptable agreement with experiment.     

Theoretical model for thin ferroelectric films and the multilayer structures based on them

A modified Weiss mean-field theory is used to study the dependence of the properties of a thin ferroelectric film on its thickness. The possibility of introducing gradient terms into the thermodynamic potential is analyzed using the calculus of variations. An integral equation is introduced to generalize the well-known Langevin equation to the case of the boundaries of a ferroelectric. An analysis of this equation leads to the existence of a transition layer at the interface between ferroelectrics or a ferroelectric and a dielectric. The permittivity of this layer is shown to depend on the electric field direction even if the ferroelectrics in contact are homogeneous. The results obtained in terms of the Weiss model are compared with the results of the models based on the correlation effect and the presence of a dielectric layer at the boundary of a ferroelectric and with experimental data.     

Dielectric properties of Ag/PAN nanocomposites

The dependence of electric modulus on the frequency of an ac electric field is studied for the silver/polyacrylonitrile nanocomposite films at several measurement temperatures and AgNO₃ contents in the original mixture. It is demonstrated that the frequency dispersion of dielectric properties is well described with the aid of the Cole-Davidson model. The relaxation maxima on the curve of the imaginary part of the electric modulus versus frequency are interpreted using the interfacial polarization.     

Effect of electric field on the dielectric permittivity of betaine phosphite crystals in the paraelectric phase

Temperature dependences of the dielectric permittivity of betaine phosphite crystals are studied both without and under application of an electric bias. It is shown that, in view of the fact that the high-temperature improper ferroelastic (antiferrodistorsive) phase transition at T _c1=355 K is nearly tricritical, the nonlinear temperature dependence of inverse dielectric permittivity in the paraelectric phase and the effect of the field on the dielectric permittivity can be described within a phenomenological model containing two coupled (polar and nonpolar) order parameters with a negative coupling coefficient. An analysis of the model revealed that, in the case where two phase transitions, a nonpolar and a ferroelectric one, can occur in the crystal, all of its dielectric properties, including the polarization response in a field, can be described by one dimensionless parameter a. For the crystal under study, we have a=?2.5. This value of the parameter corresponds to a second-order ferroelectric transition far from the tricritical point, at which a=?1. It is shown that the polarization response in the paraelectric phase in an electric field calculated within this model differs radically from that in the ferroelectric phase-transition model for which the Curie-Weiss law holds in the paraelectric phase.     

Capacitance of an elliptical disk on a semi-infinite dielectric material

Using an integral transform, the mixed boundary value problem of a conducting, elliptical disk on a dielectric half-space in an electric field is reduced to the solution of an integral equation. An analytical expression of the electric system capacitance is derived, which is a function of the eccentricity of the elliptical disk. The electric charge and electric stress distribute non-uniformly over the surface of the elliptical disk and display local singularities at the edge of the elliptical disk. The square root singularity of the electric field at the edge of the elliptical disk leads to the divergent of the resultant force on the elliptical disk, which is physically unrealistic. There likely exist geometrical constraint and/or field constraint to limit the presence of the square root singularity of the electric field. For any symmetric conductor in an infinite space that consists of air (vacuum) and a semi-infinite dielectric material with symmetric plane being in the interface between the air and the dielectric material, the electric potential in the space is independent of the dielectric constant of the dielectric material.     

The Poole–Frenkel effect in a dielectric under nanosecond irradiation by an electron beam with moderate or high current density

Processes of electron trapping and detrapping determine in many respects intense processes arising in dielectric and delayed by 1–100 ns from the irradiation pulse of a high-power electron beam, such as electron emission, electric discharge in the bulk of the dielectric, flashover, and electric breakdown. A model of charged donor center ionization in a dielectric exposed to a strong electric field is constructed. The model takes into account 1) the energy spectrum of the charged donor center in the dielectric, 2) the semiclassical state density in the donor center, 3) spontaneous emission of phonons by the electron localized in the donor center, 4) increase in the kinetic energy of the electron (heating) in the external electric field, 5) electron tunneling through a potential barrier and its reflection from the barrier depending on the external field intensity, and 6) thermal fluctuations of energy of the electron localized in the donor center. The probability of charged donor center ionization in the dielectric per unit time is calculated. In weak fields, the field dependence of the ionization probability almost coincides with that for the Poole–Frenkel theory. In strong fields, the contribution of electron heating to the external electric field is the deciding factor. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 10–16, December, 2008.     

Isothermal relaxation current in a dielectric with partially blocking contacts

The continuity and Poisson's equations are solved numerically for a dielectric with partially blocking electrodes in the nonsteady case. The distribution of the mobile-charge-carrier concentration and the electric field strength inside the dielectric is obtained at various times after the potential source is switched on. The time dependence of the isothermal current and the emf of high-voltage polarization of the dielectric with a single type of mobile charge carriers at different values of the contact current is calculated.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 12–16, September, 1985.     

Field history dependence of nonlinear dielectric properties of Ba0.6Sr0.4TiO3 ceramics under bias electric field: Polarization behavior of polar nano-regions

Nonlinear dielectric properties of Ba_0.6Sr_0.4TiO₃ ceramics prepared by citrate method were investigated under bias electric field with respect to field history. X-ray diffraction analysis and temperature dependence of the dielectric constant (ε_r) confirmed a macroscopically paraelectric state for the specimen at room temperature. A slim polarization versus electric field (P-E) hysteresis loop of the specimen at room temperature indicated the existence of polar nano-regions (PNRs) superimposed on the paraelectric background. The nonlinear dielectric properties in continuous cycles of bias field sweep displayed a strong sensitivity to the field history. This phenomenon was qualitatively explained in terms of an irreversible polarization evolution of the PNRs under the bias fields. A considerable decline of the tunability with the cycle number suggests an appreciable contribution of the PNRs to the dielectric nonlinearity. The polarization and size of the PNRs were determined by fitting the dielectric constants to a multipolarization mechanism model.     

Deep impurity-center ionization by far-infrared radiation

An analysis is made of the ionization of deep impurity centers by high-intensity far-infrared and submillimeter-wavelength radiation, with photon energies tens of times lower than the impurity ionization energy. Within a broad range of intensities and wavelengths, terahertz electric fields of the exciting radiation act as a dc field. Under these conditions, deep-center ionization can be described as multiphonon-assisted tunneling, in which carrier emission is accompanied by defect tunneling in configuration space and electron tunneling in the electric field. The field dependence of the ionization probability permits one to determine the defect tunneling times and the character of the defect adiabatic potentials. The ionization probability deviates from the field dependence e(E) ∝ exp(E ²/E _c ² ) (where E is the wave field, and E _c is a characteristic field) corresponding to multiphonon-assisted tunneling ionization in relatively low fields, where the defects are ionized through the Poole-Frenkel effect, and in very strong fields, where the ionization is produced by direct tunneling without thermal activation. The effects resulting from the high radiation frequency are considered and it is shown that, at low temperatures, they become dominant. Fiz. Tverd. Tela (St. Petersburg) 39, 1905–1932 (November 1997)     

聚酰亚胺电导率随温度和电场强度的变化规律

介质深层充电对航天器安全运行构成了重大威胁.以聚酰亚胺为代表的此类聚合物绝缘介质的电导率受温度影响显著,又因为充电过程中局部产生强电场(10~7V/m量级),因此,其电导率模型需要综合考虑温度和强电场的影响,这对介质深层充电的仿真评估意义重大.已有的两类模型,不是低温区间不适用,就是没有充分考虑强电场的影响.基于跳跃电导理论,本文分析对比了现有电导率模型,提出了适用于较宽温度范围且合理考虑强电场增强效应的电导率新模型,并采用某型聚酰亚胺电导率测试数据做出验证.此外,为了提高新模型在强电场下的低温适用范围,尝试对强电场因子中的温度做变换,取得了满意的效果.参数敏感度分析表明新模型在电导率拟合与外推方面具有参数少、适用性强的优势.     

Magneto-dielectric properties of unpolar ferrofluids

The dielectric constant and the tangent of the loss angle for kerosene and transformer oil ferrofluids are determined. The dependence of the dielectric parameters is studied as a function of the electric field frequency, the ferrofluid magnetization as well as of the applied magnetic field direction.