Teleportation describes the transmission of information without transport of neither matter nor energy. For many years, however, it has been implicitly assumed that this scheme is of inherently nonlocal nature, and therefore exclusive to quantum systems. Here, we experimentally demonstrate that the concept of teleportation can be readily generalized beyond the quantum realm. We present an optical implementation of the teleportation protocol solely based on classical entanglement between spatial and modal degrees of freedom, entirely independent of nonlocality. Our findings could enable novel methods for distributing information between different transmission channels and may provide the means to leverage the advantages of both quantum and classical systems to create a robust hybrid communication infrastructure.
Ultracompact directional optical nanoantennas are rapidly gaining popularity yet still challenging tasks to construct at the nanoscale. Here, we experimentally demonstrate unidirectional emission from a fluorescent nanodiamond coupled with a single gold nanorod. Different configurations of the assembled hybrid nanostructures were realized via step‐by‐step atomic force microscope nanomanipulation. The emission patterns can be controlled by adjusting the configurations, i.e., the gold nanorod orientation and separation with respect to the nanodiamond. Numerical simulation results reveal that the unidirectional emission can be ascribed to the interference between the electromagnetic fields produced by the dipole‐like source and the out‐of‐phase dipole induced in the gold nanorod. The proposed hybrid nanostructures remarkably exhibit highly unidirectional emission even when the emitter is positioned up to 50 nm away from the nanorod antenna and present a broad working spectral bandwidth of ∼200 nm. The distinct features of this hybrid structure suggest potential applications for novel nanoscale light sources, sensing, and quantum information.
Nanophotonic beamsplitters are fundamental building blocks in integrated optics, with applications ranging from high speed telecom receivers to biological sensors and quantum splitters. While high‐performance multiport beamsplitters have been demonstrated in several material platforms using multimode interference couplers, their operation bandwidth remains fundamentally limited. Here, we leverage the inherent anisotropy and dispersion of a sub‐wavelength structured photonic metamaterial to demonstrate ultra‐broadband integrated beamsplitting. Our device, which is three times more compact than its conventional counterpart, can achieve high‐performance operation over an unprecedented 500 nm design bandwidth exceeding all optical communication bands combined, and making it one of the most broadband silicon photonics components reported to date. Our demonstration paves the way toward nanophotonic waveguide components with ultra‐broadband operation for next generation integrated photonic systems.
A mid‐infrared (MIR) supercontinuum (SC) has been demonstrated in a low‐loss telluride glass fiber. The double‐cladding fiber, fabricated using a novel extrusion method, exhibits excellent transmission at 8–14 μm: < 10 dB/m in the range of 8–13.5 μm and 6 dB/m at 11 μm. Launched intense ultrashort pulsed with a central wavelength of 7 μm, the step‐index fiber generates a MIR SC spanning from ∼2.0 μm to 16 μm, for a 40‐dB spectral flatness. This is a fresh experimental demonstration to reveal that telluride glass fiber can emit across the all MIR molecular fingerprint region, which is of key importance for applications such as diagnostics, gas sensing, and greenhouse CO2 detection.
A scheme for active temporal‐to‐spatial demultiplexing of single photons generated by a solid‐state source is introduced. The scheme scales quasi‐polynomially with photon number, providing a viable technological path for routing n photons in the one temporal stream from a single emitter to n different spatial modes. Active demultiplexing is demonstrated using a state‐of‐the‐art photon source—a quantum‐dot deterministically coupled to a micropillar cavity—and a custom‐built demultiplexer—a network of electro‐optically reconfigurable waveguides monolithically integrated in a lithium niobate chip. The measured demultiplexer performance can enable a six‐photon rate three orders of magnitude higher than the equivalent heralded SPDC source, providing a platform for intermediate quantum computation protocols.
We experimentally demonstrate an optically‐pumped III‐V/Si vertical‐cavity laser with lateral emission into a silicon waveguide. This on‐chip hybrid laser comprises a distributed Bragg reflector, a III‐V active layer, and a high‐contrast grating reflector, which simultaneously funnels light into the waveguide integrated with the laser. This laser has the advantages of long‐wavelength vertical‐cavity surface‐emitting lasers, such as low threshold and high side‐mode suppression ratio, while allowing integration with silicon photonic circuits, and is fabricated using CMOS compatible processes. It has the potential for ultrahigh‐speed operation beyond 100 Gbit/s and features a novel mechanism for transverse mode control.
Periodic structures with a sub‐wavelength pitch have been known since Hertz conducted his first experiments on the polarization of electromagnetic waves. While the use of these structures in waveguide optics was proposed in the 1990s, it has been with the more recent developments of silicon photonics and high‐precision lithography techniques that sub‐wavelength structures have found widespread application in the field of photonics. This review first provides an introduction to the physics of sub‐wavelength structures. An overview of the applications of sub‐wavelength structures is then given including: anti‐reflective coatings, polarization rotators, high‐efficiency fiber–chip couplers, spectrometers, high‐reflectivity mirrors, athermal waveguides, multimode interference couplers, and dispersion engineered, ultra‐broadband waveguide couplers among others. Particular attention is paid to providing insight into the design strategies for these devices. The concluding remarks provide an outlook on the future development of sub‐wavelength structures and their impact in photonics.
Narrow‐linewidth lasers are key elements in optical metrology and spectroscopy. Spectral purity of these lasers determines accuracy of the measurements and quality of collected data. Solid state and fiber lasers are stabilized to relatively large and complex external optical cavities or narrow atomic and molecular transitions to improve their spectral purity. While this stabilization technique is rather generic, its complexity increases tremendously moving to longer wavelenghts, to the infrared (IR) range. Inherent increase of losses of optical materials at longer wavelengths hinders realization of compact, room temperature, high finesse IR cavities suitable for laser stabilization. In this paper, we report on demonstration of quantum cascade lasers stabilized to high‐Q crystalline mid‐IR microcavities. The lasers operating at room temperature in the 4.3‐4.6 μm region have a linewidth approaching 10 kHz and are promising for on‐chip mid‐IR and IR spectrometers.
Silicon‐based technologies provide an ideal platform for the monolithic integration of photonics and microelectronics. In this context, a variety of passive and active silicon photonic devices have been developed to operate at telecom and datacom wavelengths, at which silicon has minimal optical absorption ‐ due to its bandgap of 1.12 eV. Although in principle this transparency window limits the use of silicon for optical detection at wavelengths above 1.1 μm, in recent years tremendous advances have been made in the field of all‐silicon sub‐bandgap photodetectors at telecom and datacom wavelengths. By taking advantage of emerging materials and novel structures, these devices are becoming competitive with the more well‐established technologies, and are opening new and intriguing perspectives. In this paper, a review of the state‐of‐the‐art is presented. Devices based on defect‐mediated absorption, two‐photon absorption and the internal photoemission effect are reported, their working principles are elucidated and their performance discussed and compared.
Here we report on the hybrid nanostructures where a single ZnS nanobelt was half‐covered with an aluminum (Al) film, which is an ideal platform for studying the second‐harmonic generation (SHG) enhancement effects of the Al coating. It was fabricated by the lift‐off process and allowed for the accurate comparison of the SHG intensity between the Al‐covered and the same bare ZnS nanobelt under consistent test conditions. The results indicate that the Al coating in the hybrid nanostructures not only confines the pumping laser in the ZnS effectively, but also concentrates the emitted SHG signal greatly, increasing the signal collection efficiency. By the combination of these two effects, ∼60 times enhancement of the SHG intensity is achieved at the optimized geometry size (width and thickness) of the ZnS nanobelts. The Al‐based hybrid nanostructures open up new possibilities for low‐cost, highly efficient and directional coherent nanolight sources at short wavelengths.
Monocrystalline titanium dioxide (TiO2) micro‐spheres support two orthogonal magnetic dipole modes at terahertz (THz) frequencies due to strong dielectric anisotropy. For the first time, we experimentally detected the splitting of the first Mie mode in spheres of radii m through near‐field time‐domain THz spectroscopy. By fitting the Fano lineshape model to the experimentally obtained spectra of the electric field detected by the sub‐wavelength aperture probe, we found that the magnetic dipole resonances in TiO2 spheres have narrow linewidths of only tens of gigahertz. Anisotropic TiO2 micro‐resonators can be used to enhance the interplay of magnetic and electric dipole resonances in the emerging THz all‐dielectric metamaterial technology.
This article presents a novel III‐V on silicon laser. This work exploits the phenomenon that a passive silicon cavity, side‐coupled to a III‐V waveguide, will provide high and narrow‐band reflectivity into the III‐V waveguide: the resonant mirror. This results in an electrically pumped laser with a threshold current of 4 mA and a side‐mode suppression ratio up to 48 dB.
A semiconductor optical amplifier at 2.0‐µm wavelength is reported. This device is heterogeneously integrated by directly bonding an InP‐based active region to a silicon substrate. It is therefore compatible with low‐cost and high‐volume fabrication infrastructures, and can be efficiently coupled to other active and passive devices in a photonic integrated circuit. On‐chip gain larger than 13 dB is demonstrated at 20 °C, with a 3‐dB bandwidth of ∼75 nm centered at 2.01 µm. No saturation of the gain is observed for an on‐chip input power up to 0 dBm, and on‐chip gain is observed for temperatures up to at least 50 °C. This technology paves the way to chip‐level applications for optical communication, industrial or medical monitoring, and non‐linear optics.
Leaky modes are below‐cutoff waveguide modes that lose part of their energy to the continuum of radiation modes during propagation. In photonic nanowire lasers, leaky modes have to compete with almost lossless above‐cutoff modes and are therefore usually prevented from crossing the lasing threshold. The situation is drastically different in plasmonic nanowire systems where the above‐cutoff plasmonic modes are very lossy because of their strong confinement to the metal surface. Due to gain guiding, the threshold gain of the hybrid electric leaky mode does not increase strongly with reduced wire diameter and stays below that of all other modes, making it possible to observe leaky‐mode lasing. Plasmonic ZnO nanowire lasers operating in the gain‐guided regime could be used as coherent sources of surface plasmon polaritons at the nanoscale or as surface plasmon emitting diodes with an emission angle that depends on the nanowire diameter and the color of the surface plasmon polariton.
Stimulated emission depletion (STED) microscopy has become a powerful imaging and localized excitation method, breaking the diffraction barrier for improved spatial resolution in cellular imaging, lithography, etc. Because of specimen‐induced aberrations and scattering distortion, it is a great challenge for STED to maintain consistent lateral resolution deep inside specimens. Here we report on deep imaging STED microscopy using a Gaussian beam for excitation and a hollow Bessel beam for depletion (GB‐STED). The proposed scheme shows an improved imaging depth of up to about 155 μm in a solid agarose sample, 115 μm in polydimethylsiloxane, and 100 μm in a phantom of gray matter in brain tissue with consistent super resolution, while standard STED microscopy shows a significantly reduced lateral resolution at the same imaging depth. The results indicate the excellent imaging penetration capability of GB‐STED, paving the way for deep tissue super‐resolution imaging and three‐dimensional precise laser fabrication.
We report complete spatial shaping (both phase and amplitude) of the second‐harmonic beam generated in a nonlinear photonic crystal. Using a collinear second‐order process in a nonlinear computer generated hologram imprinted on the crystal, the desired beam is generated on‐axis and in the near field. This enables compact and efficient one‐dimensional beam shaping in comparison to previously demonstrated off‐axis Fourier holograms. We experimentally demonstrate the second‐harmonic generation of high‐order Hermite–Gauss, top hats and arbitrary skyline‐shaped beams.
Femtosecond laser machining has been widely used for fabricating arbitrary 2.5 dimensional (2.5D) structures. However, it suffers from the problems of low fabrication efficiency and high surface roughness when processing hard materials. To solve these problems, we propose a dry‐etching‐assisted femtosecond laser machining (DE‐FsLM) approach in this paper. The fabrication efficiency could be significantly improved for the formation of complicated 2.5D structures, as the power required for the laser modification of materials is lower than that required for laser ablation. Furthermore, the surface roughness defined by the root‐mean‐square improved by an order of magnitude because of the flat interfaces of laser‐modified regions and untreated areas as well as accurate control during the dry‐etching process. As the dry‐etching system is compatible with the IC fabrication process, the DE‐FsLM technology shows great potential for application in the device integration processing industry.
Wide‐angle, polarization‐independent structural reflective colors from both directions based on a one‐dimensional photonic crystal are demonstrated. Our device produces a distinct and saturated color with high angular tolerant performance up to ±70° for any polarization state of an incident light wave, which is highly desirable for a broad range of research areas. Moreover, the purity of the color and luminous intensity of the proposed device are improved as compared to conventional colorant‐based color filters and colloidal glasses. The present approach may have the potential to replace existing color filters and pigments and pave the way for various applications, including color displays and image sensor technologies.
The future generation of modern illumination should not only be cheap and highly efficient, but also demonstrate high quality of light, light which allows better color differentiation and fidelity. Here we are presenting a novel approach to create a white solid‐state light source providing ultimate color rendition necessary for a number of applications. The proposed semi‐hybrid device combines a monolithic blue‐cyan light emitting diode (MBC LED) with a green‐red phosphor mixture. It has shown a superior color rendering index (CRI), 98.6, at correlated color temperature of around 3400 K. The MBC LED epi‐structure did not suffer from the efficiency reduction typical for monolithic multi‐color emitters and was implemented in the two most popular chip designs: “epi‐up” and “flip‐chip”. Redistribution of the blue and cyan band amplitudes in the white‐light emission spectrum, using the operating current, is found to be an effective tool for fine tuning the color characteristics.
Open‐access microcavities are emerging as a new approach to confine and engineer light at mode volumes down to the λ3 regime. They offer direct access to a highly confined electromagnetic field while maintaining tunability of the system and flexibility for coupling to a range of matter systems. This article presents a study of coupled cavities, for which the substrates are produced using Focused Ion Beam milling. Based on experimental and theoretical investigation the engineering of the coupling between two microcavities with radius of curvature of 6 m is demonstrated. Details are provided by studying the evolution of spectral, spatial and polarisation properties through the transition from isolated to coupled cavities. Normal mode splittings up to 20 meV are observed for total mode volumes around . This work is of importance for future development of lab‐on‐a‐chip sensors and photonic open‐access devices ranging from polariton systems to quantum simulators.
