Raman tensor elements for multiferroic BiFeO3 with rhombohedral R3c symmetry

A quantitative assessment of the Raman spectrum emitted from a coarse‐grained polycrystal of multiferroic BiFeO₃ has been carried out by means of a polarized Raman microprobe. The dependence of the intensity of Raman phonon modes has been first theoretically modeled as a function of crystal rotation. Then, the Raman tensor elements have been experimentally determined from the analysis of the A_g and E_g vibrational modes. Copyright © 2009 John Wiley & Sons, Ltd.     

Raman study of BiFeO3 with different excitation wavelengths

Raman spectra of bismuth ferrite (BiFeO₃) over the frequency range of 100-1500 cm⁻¹ have been systematically investigated with different excitation wavelengths. The intensities of the two-phonon modes are enhanced obviously under the excitation of 532 nm wavelength. This is attributed to the resonant behavior when incident laser energy closes to the intrinsic bandgap of BiFeO₃. The Raman spectra of BiFeO₃ excited at 532 nm were measured over the temperature range from 77 to 678 K. Besides the abnormal changes of the peak position and the linewidth of the A₁ mode at 139 cm⁻¹, the prominent frequency shift, the line broadening and the decrease of the intensity for the two-phonon mode at 1250 cm⁻¹ were observed as the temperature increased to Néel temperature (T_N). All these results indicate the existence of strong spin-phonon coupling in BiFeO₃.     

Effect of magnetic annealing on phonon behaviors of nanocrystalline BiFeO3

Influence of magnetic annealing at 823 K up to 10 T (T) on the phonon behaviors of nanocrystalline BiFeO₃ was investigated by Raman spectroscopy. The frequencies of fundamental Raman modes increase obviously with increasing annealing magnetic field, and the intensity of the 1260 cm⁻¹ two-phonon mode decreases. The pronounced anomalies of Raman phonon modes under magnetic annealing are attributed to the change of the spin-phonon coupling due to the modulation of spiral spin order. Furthermore, the temperature dependence of Raman peak positions, for the two prominent modes (147 and 176 cm⁻¹), show no notable anomaly around T_N except the sample annealed under 10 T magnetic field; meanwhile, in this sample, another obvious phonon anomaly occurs at ∼150 K (another magnetic phase transition point), which indicate that stronger magnetic annealing with 10 T intensely enhances the spin-phonon coupling, and possibly increases magnetoelectric coupling of nanocrystalline BiFeO₃ due to severely modulation of spiral spin order.     

Probing the ferroelectric phase transition in sol–gel‐derived polycrystalline bismuth ferrite thin films

Polycrystalline BiFeO₃ (BFO) thin films were successfully grown on Pt/Ti/SiO₂/Si(100) and SrTiO₃ (STO) (100) substrates using the chemical solution deposition (CSD) technique. X‐ray diffraction (XRD) patterns indicate the polycrystalline nature of the films with rhombohedrally distorted perovskite crystal structure. Differential thermal analysis (DTA) was performed on the sol–gel‐derived powder to countercheck the crystal structure, ferroelectric (FE) to paraelectric (PE) phase transition, and melting point of bismuth ferrite. We observed a significant exothermic peak at 840 °C in DTA graphs, which corresponds to an FE–PE phase transition. Raman spectroscopy studies were carried out on BFO thin films prepared on both the substrates over a wide range of temperature. The room‐temperature unpolarized Raman spectra of BFO thin films indicate the presence of 13 Raman active modes, of which five strong modes were in the low‐wavenumber region and eight weak Raman active modes above 250 cm⁻¹. We observed slight shifts in the lower wavenumbers towards lower values with increase in temperature. The temperature‐dependent Raman spectra indicate a complete disappearance of all Raman active modes at 840 °C corresponding to the FE–PE phase transitions. There is no evidence of soft mode phonons. Copyright © 2008 John Wiley & Sons, Ltd.     

Temperature‐dependent Raman study of PrFeO3thin film

Low‐temperature Raman study of (001)‐oriented PrFeO₃ thin film of around 200 nm thickness deposited on a LaAlO₃ (001) substrate by using the pulsed‐laser deposition technique is presented. X‐ray diffraction analysis of this film shows an orthorhombic structure with Pbnm space group. The observed substrate‐induced strain is found to be small. In the room temperature Raman spectra, different Raman modes were observed that were classified according to the orthorhombic structure. All the observed modes show a decrease in wavenumber with rise in temperature, except the B_1g mode (624 cm⁻¹) which shows some anomalous behavior. We tried to correlate the variations in linewidth and position with temperature for the observed modes with the octahedral disorder of FeO₆. Many possibilities are presented to explain the observed results. Copyright © 2010 John Wiley & Sons, Ltd.     

Possible interplay between a two phonon mode and high energy magnetic excitations in BiFeO<Subscript>3</Subscript>

We have performed Raman measurements on high energy excitations in BiFeO₃ single crystals as a function of both temperature and laser excitation lines. A strong feature observed at 1250 cm^-1 in the Raman spectra has been previously assigned to two phonon overtone. This peak exhibits an unusual frequency shift with the laser lines and the temperature dependence of its Fano lineshape shows two singularities at 150 K and 200 K which can be related to magnetic excitations. In the same energy range, we have also identified the two-magnon excitation with a temperature dependence very similar to the one measured for the one-magnon modes.     

High‐resolution stimulated Raman spectroscopy and analysis of line positions and assignments for the ν2 and ν3 bands of 13C2H4

High‐resolution stimulated Raman spectra of¹³C₂H₄ in the regions of the ν₂ and ν₃ Raman active modes have been recorded at two temperatures (145 and 296 K) based on the quasi continuous‐wave (cw) stimulated Raman spectrometer at Instituto de Estructura de la Materia IEM‐CSIC in Madrid. A tensorial formalism adapted to X₂Y₄ planar asymmetric tops with D_2h symmetry (developed in Dijon) and a program suite called D_2hTDS (now part of the XTDS/SPVIEW spectroscopic software) were proposed to analyze and calculate the high‐resolution spectra. A total of 103 and 51 lines corresponding to ν₂ and ν₃ Raman active modes have been assigned and fitted in wavenumber with a global root mean square deviation of 0.54 × 10⁻³ and 0.36 × 10⁻³ cm⁻¹, respectively. Due to the fact that the Raman scattering effect is weak, we did not perform in this contribution the line intensities analysis. Copyright © 2016 John Wiley & Sons, Ltd.     

Micro‐Raman investigation of tin dioxide nanostructured material based on annealing effect

Rutile‐structured nanocrystalline tin dioxide (SnO₂) powder was synthesized by the chemical precipitation method using the precursor SnCl₂• 5H₂O. The SnO₂ powder was annealed at different temperatures, namely, 600, 800 and 1000 °C. Micro‐Raman spectra were recorded for both the as‐grown and annealed SnO₂ nanocrystalline samples. Micro‐Raman spectral measurements on the SnO₂ nanoparticle show the first‐order Raman modes A_1g (633 cm⁻¹), E_1g (475 cm⁻¹) and B_2g (775 cm⁻¹), indicating that the grown SnO₂ belongs to the rutile structure. The first‐order A_1g mode is observed as an intense band, whereas the other two modes show low intensity. The full width at half‐maximum and band area of the Raman lines of SnO₂ nanoparticle annealed at various temperatures were calculated. The effect of high‐temperature annealing on the vibrational modes of SnO₂ was studied. The optical image of SnO₂ nanocrystalline material was used to understand the surface morphology effect. Copyright © 2011 John Wiley & Sons, Ltd.     

Swift heavy ion irradiation induced modification of BiFeO3 thin films prepared by sol-gel method

We report the preparation of multiferroic BiFeO₃ thin films on ITO coated glass substrates through sol-gel spin coating method followed by thermal annealing and their modification by swift heavy ion (SHI) irradiation. X-ray diffraction and Raman spectroscopy studies revealed amorphous nature of the as deposited films. Rhombohedral crystalline phase of BiFeO₃ evolved on annealing the films at 550°C. Both XRD and Raman studies indicated that SHI irradiation by 200 MeV Au ions result in fragmentation of particles and progressive amorphization with increasing irradiation fluence. The average crystallite size estimated from the XRD line width decreased from 38 nm in pristine sample annealed at 550°C to 29 nm on irradiating these films by 200 MeV Au ions at 1 × 10¹¹ ions cm⁻². Complete amorphization of the rhombohedral BiFeO₃ phase occurs at a fluence of 1 × 10¹² ions.cm⁻². Irradiation by another ion (200 MeV Ag) had the similar effect. For both the ions, the electronic energy loss exceeds the threshold electronic energy loss for creation of amorphized latent tracks in BiFeO₃.     

Bi-induced vibrational modes in GaAsBi

We have studied GaAs_1−xBi_x (up to x3%) using Raman scattering with two different polarization configurations. Two Bi-induced phonon modes are observed at 186 cm⁻¹ and 214 cm⁻¹ with increasing Raman intensity as the Bi concentration increases. By comparing Raman selection rules for the observed Bi-induced phonon modes with those for the substitutional N vibrational mode (GaN mode) in GaAsN, the phonon mode at 214 cm⁻¹ is identified as originating from substitutional Bi at the As site in GaAsBi.     

Micro‐Raman investigation of transition‐metal‐doped ZnO nanoparticles

We measured the Raman spectra of ZnO nanoparticles (ZnO‐NPs), as well as transition‐metal‐doped (5% Mn(II), Fe(II) or Co(II)) ZnO nanoparticles, with an average size of 9 nm. A typical Raman peak at 436 cm⁻¹ is observed in the ZnO‐NPs, whereas Zn_1−xMn_xO, Zn_1−xFe_xO and Zn_1−xCo_xO presented characteristic peaks at 661, 665 and 675 cm⁻¹, respectively. These peaks can be related to the formation of Mn₃O₄, Fe₃O₄ and Co₃O₄ species in the doped ZnO‐NPs. Moreover, these samples were analyzed at various laser powers. Here, we observed new vibrational modes (512, 571 and 528 cm⁻¹), which are specific to Mn, Fe and Co dopants, respectively, and ZnO‐NPs did not reveal any additional modes. The new peaks were interpreted either as disorder activated phonon modes or as local vibrations of Mn‐, Fe‐ and Co‐related complexes in ZnO. Copyright © 2007 John Wiley & Sons, Ltd.     

Vibrational properties of graphene and graphene layers

The phonon dispersions of graphene and graphene layers are theoretically investigated within fifth‐nearest‐neighbor force‐constant approach. Based on their symmetry groups, the number of Raman‐ and infrared‐active modes at the Γ point is given. Interatomic force constants are recalculated by fitting them to experimental phonon energy dispersion curves. Wavenumbers of optically active modes are presented as a function of number of layers (n). Our calculated results reproduce well the experimental data of G peak for graphene (1587 cm⁻¹) and graphite (1581.6 cm⁻¹) and clearly give the relation that ω_G = 1581.6 + 11/(1 + n^1.6). Copyright © 2009 John Wiley & Sons, Ltd.     

Raman spectroscopy of gallium‐ and zinc‐based hydrotalcites

Insight into the unique structure of hydrotalcites (HTs) has been obtained using Raman spectroscopy. Gallium‐containing HTs of formula Zn₄ Ga₂(CO₃)(OH)₁₂ · xH₂O (2:1 ZnGa‐HT), Zn₆ Ga₂(CO₃)(OH)₁₆ · xH₂O (3:1 ZnGa‐HT) and Zn₈ Ga₂(CO₃)(OH)₁₈ · xH₂O (4:1 ZnGa‐HT) have been successfully synthesised and characterised by X‐ray diffraction (XRD) and Raman spectroscopy. The d(003) spacing varies from 7.62 Å for the 2:1 ZnGa‐HT to 7.64 Å for the 3:1 ZnGa‐HT. The 4:1 ZnGa‐HT showed a decrease in the d(003) spacing, compared to the 2:1 and 3:1 compounds. Raman spectroscopy complemented with selected infrared data has been used to characterise the synthesised gallium‐containing HTs. Raman bands observed at around 1050, 1060 and 1067 cm⁻¹ are attributed to the symmetric stretching modes of the (CO₃²⁻) units. Multiple ν₃ (CO₃²⁻) antisymmetric stretching modes are found between 1350 and 1520 cm⁻¹, confirming multiple carbonate species in the HT structure. The splitting of this mode indicates that the carbonate anion is in a perturbed state. Raman bands observed at 710 and 717 cm⁻¹ and assigned to the ν₄ (CO₃²⁻) modes support the concept of multiple carbonate species in the interlayer. Copyright © 2010 John Wiley & Sons, Ltd.     

Raman study of structural disorder in ZnO nanopowders

Raman scattering spectroscopy has been used for the characterization of zinc oxide nanoparticles obtained by mechanical activation in a high‐energy vibro‐mill and planetary ball mill. Raman modes observed in spectra of nonactivated sample are assigned to Raman spectra of the ZnO monocrystal, while the spectra of mechanically activated samples point out to the structural and stoichiometric changes, depending on the milling time and the choice of equipment. Observed redshift and peak broadening of the E₂^high and E₁ (LO) first‐order Raman modes are attributed to increased disorder induced by mechanical milling, followed by the effects of phonon confinement due to correlation length decrease. The additional modes identified in Raman spectra of activated ZnO samples are related to the surface optical phonon modes, due to the intrinsic surface defects and presence of ZrO₂as extrinsic defects introduced by milling in zirconia vials. Copyright © 2009 John Wiley & Sons, Ltd.     

The Raman spectrum of grossular garnet: a quantum mechanical simulation of wavenumbers and intensities

Raman spectroscopy is a standard and powerful investigation technique for minerals, and garnet is one of the most observed and visible minerals, undoubtfully important both as a witness of our planet's evolution and as a main component in many high‐tech applications. This paper presents the Raman spectrum of grossular, the calcium–aluminium end‐member of garnets (Ca ₃Al ₂Si ₃O₁₂), as computed by using an ab initio quantum‐mechanical approach, an all‐electron Gaussian‐type basis set and the hybrid B3LYP functional. The wavenumbers of the 25 Raman active modes are in excellent agreement with the available experimental measurements, with the mean absolute difference being between 5 and 8 cm ^{− 1}. The apparent disagreement between a few experimental vs calculated data can be easily justified through the analysis of the corresponding calculated peak intensities, which is very low in all of these cases. The intensities of the Raman active modes of grossular were calculated here for the first time, thanks to a recent implementation by some of the present authors that allow for accurate predictions of the Raman spectra of minerals. To the authors’ knowledge, there are no tabulated data sets for Raman intensities of grossular, although qualitative information can be extracted from the published spectra. This study can then be considered as an accurate reference data set for grossular, other than a clear evidence that quantum‐mechanical simulation is an actual tool to predict spectroscopic properties of minerals. Copyright © 2014 John Wiley & Sons, Ltd.     

Surface‐enhanced Raman spectroscopy of 4‐tert‐butylpyridine on a silver electrode

We report the observation of large surface‐enhanced Raman scattering (SERS) (10⁶) for 4‐tert‐butylpyridine molecules adsorbed on a silver electrode surface in an electrochemical cell with electrode potential set at − 0.5 V. A decrease in electrode potential to − 0.3 V was accompanied by a decrease in relative intensities of the vibrational modes. However, there were no changes in vibrational wavenumbers. Comparison of both normal solution Raman and SERS spectra shows very large enhancement of the intensities of a₁, a₂, and b₂ modes at laser excitation of 488 nm. Enhancement of the non‐totally symmetric modes indicates the presence of charge transfer as a contributor to the enhancement. Copyright © 2011 John Wiley & Sons, Ltd.     

Spectroscopy of phonon and vibronic states of YbAl3(BO3)4 single crystal

The polarized Raman and reflection spectra of a single crystal YbAl₃(BO₃)₄ at room temperature were studied. Raman active vibrational modes A ₁, E _TO, and E _LO are identified. In the Raman spectrum, we detected an intense line at a frequency of 1018 cm⁻¹, which refers to internal vibrations of the BO₃ group and is known to be promising for use in amplifiers based on stimulated Raman scattering. From the simulation of reflection spectra by the method of dispersion analysis the frequencies of A ₂ vibrational modes were determined. Intense bands observed in the low-temperature transmission spectra in the range of f-f transitions in the Yb³⁺ ion are attributed to electron-phonon transitions. The Raman lines are compared with electron-phonon lines in the transmission spectrum.     

Structural modifications of GaN after cerium implantation

Among the family of rare earth (RE) dopants, the doping of first member Ce into GaN is the least studied system. This article reports structure properties of Ce‐doped GaN realized by technique of ion implantation. Ce ions were implanted into metal organic chemical vapor deposition grown n‐ and p‐GaN/sapphire thin films at doses 3 × 10¹⁴ and 2 × 10¹⁵ cm⁻². X‐ray diffraction scans and Raman scattering measurements exhibited expansion of lattice in the implanted portion of the samples. First order Raman scattering spectra show appearance of several disorder‐activated Raman scattering modes in addition to typical GaN features. A dose‐dependent decrease in intensity of E₂ mode was observed in Raman the spectra of the implanted samples. Ultraviolet Raman spectra of implanted samples show complete quenching of photoluminescence emission and appearance of multiple A₁(LO) phonon scattering modes up to fifth order. Moreover, a decrease in intensity and an increase in line width of LO modes as a function of wavenumber were observed for implanted samples. Copyright © 2012 John Wiley & Sons, Ltd.     

Raman spectroscopy of gallium‐based hydrotalcites of formula Mg6Ga2(CO3)(OH)16· 4H2O

Insight into the unique structure of hydrotalcites has been obtained using Raman spectroscopy. Gallium‐containing hydrotalcites of formula Mg₄Ga₂(CO₃)(OH)₁₂· 4H₂O (2:1 Ga‐HT) to Mg₈Ga₂(CO₃)(OH)₂₀· 4H₂O (4:1 Ga‐HT) have been successfully synthesized and characterized by X‐ray diffraction and Raman spectroscopy. The d(003) spacing varied from 7.83 Å for the 2:1 hydrotalcite to 8.15 Å for the 3:1 gallium‐containing hydrotalcite. Raman spectroscopy complemented with selected infrared data has been used to characterize the synthesized gallium‐containing hydrotalcites of formula Mg₆Ga₂(CO₃)(OH)₁₆· 4H₂O. Raman bands observed at around 1046, 1048 and 1058 cm⁻¹ are attributed to the symmetric stretching modes of the CO₃²⁻ units. Multiple ν₃ CO₃²⁻ antisymmetric stretching modes are found at around 1346, 1378, 1446, 1464 and 1494 cm⁻¹. The splitting of this mode indicates that the carbonate anion is in a perturbed state. Raman bands observed at 710 and 717 cm⁻¹ assigned to the ν₄ (CO₃²⁻) modes support the concept of multiple carbonate species in the interlayer. Copyright © 2009 John Wiley & Sons, Ltd.     

Lattice dynamics of Al‐containing MAX‐phase carbides: a first‐principle study

A systematic study on lattice dynamics of M_{n + 1}AlC_n (n = 1–3) phases using first‐principle calculations is reported, where the Raman‐active and infrared‐active (IR) modes are emphasized. The highest phonon wavenumber is related to the vibration of C atoms. The ‘imaginary wavenumber’ in the phonon spectrum of Nb₃AlC₂ contributes to the composition gap in Nb‐Al‐C system (Nb₂AlC and Nb₄AlC₃ do appear in experiments, but there are no experimental reports on Nb₃AlC₂). The full set of Raman‐active and IR‐active modes in the 211, 312, and 413 M_{n + 1}AX_n phases is identified, with the corresponding Raman and IR wavenumbers. The 211, 312, and 413 M_{n + 1}AX_n phases have 4, 6, and 8 IR‐active modes, respectively. There is no distinct difference among the wavenumber ranges of IR‐active modes for 211, 312, and 413 phases, with the highest wavenumber of 780 cm⁻¹ in Ta₄AlC₃. The Raman wavenumbers of M₂AlC phases all decrease with increasing the d‐electron shell number of transition metal M. However, this case is valid only for the Raman‐active modes with low wavenumbers of M₃AlC₂ and M₄AlC₃. Copyright © 2015 John Wiley & Sons, Ltd.