A compact 64‐channel hybrid demultiplexer based on silicon‐on‐insulator nanowires is proposed and demonstrated experimentally to enable wavelength‐division‐multiplexing and mode‐division‐multiplexing simultaneously in order to realize an ultra‐large capacity on‐chip optical‐interconnect link. The present hybrid demultiplexer consists of a 4‐channel mode multiplexer constructed with cascaded asymmetrical directional‐couplers and two bi‐directional 17 × 17 arrayed‐waveguide gratings (AWGs) with 16 channels. Here each bi‐directional AWG is equivalent as two identical 1 × 16 AWGs. The measured excess loss and the crosstalk for the monolithically integrated 64‐channel hybrid demultiplexer are about ‐5 dB and ‐14 dB, respectively. Better performance can be achieved by minimizing the imperfections (particularly in AWGs) during the fabrication processes.
Nanophotonic beamsplitters are fundamental building blocks in integrated optics, with applications ranging from high speed telecom receivers to biological sensors and quantum splitters. While high‐performance multiport beamsplitters have been demonstrated in several material platforms using multimode interference couplers, their operation bandwidth remains fundamentally limited. Here, we leverage the inherent anisotropy and dispersion of a sub‐wavelength structured photonic metamaterial to demonstrate ultra‐broadband integrated beamsplitting. Our device, which is three times more compact than its conventional counterpart, can achieve high‐performance operation over an unprecedented 500 nm design bandwidth exceeding all optical communication bands combined, and making it one of the most broadband silicon photonics components reported to date. Our demonstration paves the way toward nanophotonic waveguide components with ultra‐broadband operation for next generation integrated photonic systems.
Monocrystalline titanium dioxide (TiO2) micro‐spheres support two orthogonal magnetic dipole modes at terahertz (THz) frequencies due to strong dielectric anisotropy. For the first time, we experimentally detected the splitting of the first Mie mode in spheres of radii m through near‐field time‐domain THz spectroscopy. By fitting the Fano lineshape model to the experimentally obtained spectra of the electric field detected by the sub‐wavelength aperture probe, we found that the magnetic dipole resonances in TiO2 spheres have narrow linewidths of only tens of gigahertz. Anisotropic TiO2 micro‐resonators can be used to enhance the interplay of magnetic and electric dipole resonances in the emerging THz all‐dielectric metamaterial technology.
A diode‐pumped Yb:YAG MOPA‐System for the unprecedented generation of transform limited pulses with variable pulse duration in the range between 10 ps and 100 ps is presented. First applications relying on unique pulse parameters as modulation free spectrum, tunability and coherence length, namely the direct laser interference patterning (DLIP) and laser cooling of stored relativistic ion beams are highlighted. Pulses are generated by a mode‐locked fs‐oscillator while the spectral bandwidth is narrowed in the subsequent regenerative amplifier by an intra‐cavity grating monochromator. Two alternative booster amplifiers were added to increase the pulse energy to 100 μJ and 10 mJ, respectively.
A necessary condition for generation of bright soliton Kerr frequency combs in microresonators is to achieve anomalous group velocity dispersion (GVD) for the resonator modes. This condition is hard to implement in the visible as well as ultraviolet since the majority of optical materials are characterized with large normal GVD in these wavelength regions. We overcome this challenge by borrowing ideas from strongly dispersive coupled systems in solid state physics and optics. We show that photonic compound ring resonators can possess large anomalous GVD at any desirable wavelength, even if each individual resonator is characterized with normal GVD. Based on this concept, we design a mode‐locked frequency comb with thin‐film silicon nitride compound ring resonators in the vicinity of the rubidium D1 line (794.6 nm) and propose to use this optical comb as a flywheel for chip‐scale optical clocks.
Silicon‐based technologies provide an ideal platform for the monolithic integration of photonics and microelectronics. In this context, a variety of passive and active silicon photonic devices have been developed to operate at telecom and datacom wavelengths, at which silicon has minimal optical absorption ‐ due to its bandgap of 1.12 eV. Although in principle this transparency window limits the use of silicon for optical detection at wavelengths above 1.1 μm, in recent years tremendous advances have been made in the field of all‐silicon sub‐bandgap photodetectors at telecom and datacom wavelengths. By taking advantage of emerging materials and novel structures, these devices are becoming competitive with the more well‐established technologies, and are opening new and intriguing perspectives. In this paper, a review of the state‐of‐the‐art is presented. Devices based on defect‐mediated absorption, two‐photon absorption and the internal photoemission effect are reported, their working principles are elucidated and their performance discussed and compared.
The progress on multi‐wavelength quantum cascade laser arrays in the mid‐infrared is reviewed, which are a powerful, robust and versatile source for next‐generation spectroscopy and stand‐off detection systems. Various approaches for the array elements are discussed, from conventional distributed‐feedback lasers over master‐oscillator power‐amplifier devices to tapered oscillators, and the performances of the different array types are compared. The challenges associated with reliably achieving single‐mode operation at deterministic wavelengths for each laser element in combination with a uniform distribution of high output power across the array are discussed. An overview of the range of applications benefiting from the quantum cascade laser approach is given. The distinct and crucial advantages of arrays over external cavity quantum cascade lasers as tunable single‐mode sources in the mid‐infrared are discussed. Spectroscopy and hyperspectral imaging demonstrations by quantum cascade laser arrays are reviewed.
The broadband enhancement of single‑photon emission from nitrogen‐vacancy centers in nanodiamonds coupled to a planar multilayer metamaterial with hyperbolic dispersion is studied experimentally. The metamaterial is fabricated as an epitaxial metal/dielectric superlattice consisting of CMOS‐compatible ceramics: titanium nitride (TiN) and aluminum scandium nitride (AlxSc1‐xN). It is demonstrated that employing the metamaterial results in significant enhancement of collected single‑photon emission and reduction of the excited‐state lifetime. Our results could have an impact on future CMOS‐compatible integrated quantum sources.
The terahertz (THz) radiation from InGaN/GaN dot‐in‐a‐wire nanostructures has been investigated. A submicrowatt THz signal is generated with just ten vertically stacked InGaN quantum dots (QDs) in each GaN nanowire. Based on the experimental results and analysis, a single quantum wire is expected to generate an output power as high as 10 pW, corresponding to 1 pW per dot. These structures are among the most efficient three‐dimensional quantum‐confined nanostructures for the THz emission. By applying a reverse bias along the wires in a light‐emitting device (LED) consisting of such nanostructures, the THz output power is increased more than fourfold. Based on THz and photoluminescence (PL) experiments, the mechanism for the THz emission is attributed to dipole radiation induced by internal electric fields and enhanced by external fields.
This article presents a novel III‐V on silicon laser. This work exploits the phenomenon that a passive silicon cavity, side‐coupled to a III‐V waveguide, will provide high and narrow‐band reflectivity into the III‐V waveguide: the resonant mirror. This results in an electrically pumped laser with a threshold current of 4 mA and a side‐mode suppression ratio up to 48 dB.
The recent progress in integrated quantum optics has set the stage for the development of an integrated platform for quantum information processing with photons, with potential applications in quantum simulation. Among the different material platforms being investigated, direct‐bandgap semiconductors and particularly gallium arsenide (GaAs) offer the widest range of functionalities, including single‐ and entangled‐photon generation by radiative recombination, low‐loss routing, electro‐optic modulation and single‐photon detection. This paper reviews the recent progress in the development of the key building blocks for GaAs quantum photonics and the perspectives for their full integration in a fully‐functional and densely integrated quantum photonic circuit.
Photonic waveguide arrays provide an excellent platform for simulating conventional topological systems, and they can also be employed for the study of novel topological phases in photonics systems. However, a direct measurement of bulk topological invariants remains a great challenge. Here we study topological features of generalized commensurate Aubry‐André‐Harper (AAH) photonic waveguide arrays and construct a topological phase diagram by calculating all bulk Chern numbers, and then explore the bulk‐edge correspondence by analyzing the topological edge states and their winding numbers. In contrast to incommensurate AAH models, diagonal and off‐diagonal commensurate AAH models are not topologically equivalent. In particular, there appear nontrivial topological phases with large Chern numbers and topological phase transitions. By implementing Thouless pumping of light in photonic waveguide arrays, we propose a simple scheme to measure the bulk Chern numbers.
Optical absorbers find uses in a wide array of applications across the electromagnetic spectrum, including photovoltaic and photochemical cells, photodetectors, optical filters, stealth technology, and thermal light sources. Recent efforts have sought to reduce the footprint of optical absorbers, conventionally based on graded structures or Fabry‐Perot‐type cavities, by using emerging concepts in plasmonics, metamaterials, and metasurfaces. Unfortunately, these new absorber designs require patterning on subwavelength length scales, and are therefore impractical for many large‐scale optical and optoelectronic devices. In this article, we summarize recent progress in the development of optical absorbers based on lossy films with thicknesses significantly smaller than the incident optical wavelength. These structures have a small footprint and require no nanoscale patterning. We outline the theoretical foundation of these absorbers based on “ultra‐thin‐film interference”, including the concepts of loss‐induced phase shifts and critical coupling, and then review several applications, including ultra‐thin color coatings, decorative photovoltaics, high‐efficiency photochemical cells, and infrared scene generators.
Entangled photon pairs must often be spatially separated for their subsequent manipulation in integrated quantum circuits. Separation that is both deterministic and universal can in principle be achieved through anti‐coalescent two‐photon quantum interference. However, such interference‐facilitated pair separation (IFPS) has not been extensively studied in the integrated setting, which has important implications on performance. This work provides a detailed review of IFPS and examines how integrated device dependencies such as dispersion impact separation fidelity and interference visibility. The analysis applies equally to both on‐chip and in‐fiber implementations. When coupler dispersion is present, the separation performance can depend on photon bandwidth, spectral entanglement and the dispersion. By design, reduction in the separation fidelity due to loss of non‐classical interference can be perfectly compensated for by classical wavelength demultiplexing effects. This work informs the design of devices for universal photon pair separation of states with tunable arbitrary properties.
Optical waveguide theory is an established part of optical physics. Yet only recently have fundamental phenomena such as spatial eigenmodes and principal modes been demonstrated experimentally. This work leverages recently developed techniques enabling detailed spatiotemporal characterisation of multimode fibre to provide new insights into the fundamentals of fibre propagation. This paper presents detailed analysis of all 420 of a fibre's principal modes and spatial eigenmodes and compares the similarity and differences between these two phenomena. It was found that even over very short lengths, the principal modes can not only significantly suppress modal dispersion but are also a more physically meaningful basis than spatial eigenmodes.
Nonlinear wave mixing in mesoscopic silicon structures is a fundamental nonlinear process with broad impact and applications. Silicon nanowire waveguides, in particular, have large third‐order Kerr nonlinearity, enabling salient and abundant four‐wave‐mixing dynamics and functionalities. Besides the Kerr effect, in silicon waveguides two‐photon absorption generates high free‐carrier densities, with corresponding fifth‐order nonlinearity in the forms of free‐carrier dispersion and free‐carrier absorption. However, whether these fifth‐order free‐carrier nonlinear effects can lead to six‐wave‐mixing dynamics still remains an open question until now. Here we report the demonstration of free‐carrier‐induced six‐wave mixing in silicon nanowires. Unique features, including inverse detuning dependence of six‐wave‐mixing efficiency and its higher sensitivity to pump power, are originally observed and verified by analytical prediction and numerical modeling. Additionally, asymmetric sideband generation is observed for different laser detunings, resulting from the phase‐sensitive interactions between free‐carrier six‐wave‐mixing and Kerr four‐wave‐mixing dynamics. These discoveries provide a new path for nonlinear multi‐wave interactions in nanoscale platforms.
Use of resonant light forces opens up a unique approach to high‐volume sorting of microspherical resonators with much higher uniformity of resonances compared to that in coupled‐cavity structures obtained by the best semiconductor technologies. In this work, the spectral response of the propulsion forces exerted on polystyrene microspheres near tapered microfibers is directly observed. The measurements are based on the control of the detuning between the tunable laser and internal resonances in each sphere with accuracy higher than the width of the resonances. The measured spectral shape of the propulsion forces correlates well with the whispering‐gallery mode resonances in the microspheres. The existence of a stable radial trap for the microspheres propelled along the taper is demonstrated. The giant force peaks observed for 20‐μm spheres are found to be in a good agreement with a model calculation demonstrating an efficient use of the light momentum for propelling the microspheres.
The ferroelectric domain structures of periodically poled KTiOPO4 and two‐dimensional short range ordered poled LiNbO3 crystals are determined non‐invasively by interferometric measurements of the electro‐optically induced phase retardation. Owing to the sign reversal of the electro‐optical coefficients upon domain inversion, a π phase shift is observed for the inverted domains. The microscopic setup provides diffraction‐limited spatial resolution allowing us to reveal the nonlinear and electro‐optical modulation patterns in ferroelectric crystals in a non‐destructive manner and to determine the poling period, duty cycle and short‐range order as well as detect local defects in the domain structure. Conversely, knowing the ferroelectric domain structure, one can use electro‐optical microscopy so as to infer the distribution of the electric field therein.
We report complete spatial shaping (both phase and amplitude) of the second‐harmonic beam generated in a nonlinear photonic crystal. Using a collinear second‐order process in a nonlinear computer generated hologram imprinted on the crystal, the desired beam is generated on‐axis and in the near field. This enables compact and efficient one‐dimensional beam shaping in comparison to previously demonstrated off‐axis Fourier holograms. We experimentally demonstrate the second‐harmonic generation of high‐order Hermite–Gauss, top hats and arbitrary skyline‐shaped beams.
High performance semiconductor lasers on silicon are critical elements of next generation photonic integrated circuits. Transfer printing methods provide promising paths to achieve hybrid integration of III‐V devices on Si platforms. This paper presents materials and procedures for epitaxially releasing thin‐film microscale GaAs based lasers after their full fabrication on GaAs native substrates, and for subsequently transfer printing arrays of them onto Si wafers. An indium‐silver based alloy serves as a thermally conductive bonding interface between the lasers and the Si, for enhanced performance. Numerical calculations provide comparative insights into thermal properties for devices with metallic, organic and semiconductor interfaces. Under current injection, the first of these three interfaces provides, by far, the lowest operating temperatures. Such devices exhibit continuous‐wave lasing in the near‐infrared range under electrical pumping, with performance comparable to unreleased devices on their native substrates.
