Electrical resistivity in the strong-correlation limit of the emery model

On the basis of the Emery model in the limitU _d , the electrical resistivity is calculated by means of the memory function method. The inelastic scattering of oxygen holes on transverse and longitudinal antiferromagnetic spin fluctuations of copper spins is considered. Assuming a Fermi-liquid model for the dynamic spin susceptibility, the two-dimensional spin-fluctuation resistivity reveals a crossover from a quadratic to a linear temperature dependence. This may explain the normal-state basal-plane resistivity of high-T _c superconductors, in particular the observed non-linear temperature dependences.     

Electrical conductivity and low field magnetoresistance in polycrystalline La1−xKxMnO3 pellets prepared by pyrophoric method

Electrical conductivity and magnetoresistance of a series of monovalent (K) doped La_1−xK_xMnO₃ polycrystalline pellets prepared by pyrophoric method have been reported. K doping increases the conductivity as well as the Curie temperature (T_C) of the system. Curie temperature increases from 260 to 309 K with increasing K content. Above the metal-insulator transition temperature (T>T_MI), the electrical resistivity is dominated by adiabatic polaronic model, while in the ferromagnetic region (50<T<T_MI), the resistivity is governed by several electron scattering processes. Based on a scenario that the doped manganites consist of phase separated ferromagnetic metallic and paramagnetic insulating regions, all the features of the temperature variation of the resistivity between ∼50 and 300 K are described very well by a single expression. All the K doped samples clearly display the existence of strongly field dependent resistivity minimum close to ∼30 K. Charge carrier tunneling between antiferromagnetically coupled grains explains fairly well the resistivity minimum in monovalent (K) doped lanthanum manganites. Field dependence of magnetoresistance at various temperatures below T_C is accounted fairly well by a phenomenological model based on spin polarized tunneling at the grain boundaries. The contributions from the intrinsic part arising from DE mechanism, as well as, the part originating from intergrannular spin polarized tunneling are also estimated.     

Transport properties in the pseudobinary (Gd,Y) Al2 series

The temperature dependence of the electrical resistivity, the thermal conductivity and the thermopower of the cubic isostructural (Gd_xY_1–x)Al₂ series will be presented. The magnetic properties of this system are characterized by the existence of ferromagnetism for Gd concentrations x>0.3 while for low Gd contents cluster and spinglass behaviour is observed. The spin dependent scattering contribution to the transport phenomena has been obtained by comparing the experimental data of the magnetic compounds with those of the isostructural nonmagnetic YAl₂. For the ferromagnetic concentration range and forT>T _c (T _c =Curie temperature) we revealed a temperature independent contribution to the electrical resistivity, a contribution with a temperature variation of 1/T to the thermal resistivity and a linear temperature dependence of this part to the thermopower. These results are in good agreement with the temperature dependence calculated by solving the linearized Boltzmann equation for this type of scattering processes.     

Electrical transport in La1−x Ca x MnO3 thin films at low temperatures

We report here the low-temperature resistivity of the chemical solution deposited La_1−x Ca _x MnO₃ (x=0.2, 0.3 and 0.33) thin films on LaAlO₃ substrates. The films were post-annealed in atmosphere at 850°C. The low temperature resistivity data has been studied in order to understand the nature of low-temperature conduction processes. The data showed T ² dependence from 60 K to 120 K consistent with the single magnon scattering process. The deviation from this quadratic temperature dependence at low temperatures is attributed to the collapse of the minority spin band. The two-magnon and electron-phonon processes contribute to scattering of carriers in the temperature range above 120 K.     

Multi-patch model for transport properties of cuprate superconductors

A number of normal state transport properties of cuprate superconductors are analyzed in detail using the Boltzmann equation. The momentum dependence of the electronic structure and the strong momentum anisotropy of the electronic scattering are included in a phenomenological way via a multi-patch model. The Brillouin zone and the Fermi surface are divided in regions where scattering between the electrons is strong and the Fermi velocity is low (hot patches) and in regions where the scattering is weak and the Fermi velocity is large (cold patches). We present several motivations for this phenomenology starting from various microscopic approaches. A solution of the Boltzmann equation in the case of N patches is obtained and an expression for the distribution function away from equilibrium is given. Within this framework, and limiting our analysis to the two patches case, the temperature dependence of resistivity, thermoelectric power, Hall angle, magnetoresistance and thermal Hall conductivity are studied in a systematic way analyzing the role of the patch geometry and the temperature dependence of the scattering rates. In the case of Bi-based cuprates, using ARPES data for the electronic structure, and assuming an inter-patch scattering between hot and cold states with a linear temperature dependence, a reasonable agreement with the available experiments is obtained. Received 3 August 2001 and Received in final form 1st November 2001     

Resonant phonon scattering in a coupled spin-phonon system

From a perturbation treatment of phonon scattering by a spin system of arbitrary concentration, we derive the frequency and concentration dependence of the phonon relaxation time, which are important for the analysis of thermal conductivity experiments. Comparison is made with theories of coupled spin-phonon modes based on Green-function methods.     

The special features of the frequency dependence of phononless hopping conduction

Within the framework of perturbation theory the imaginary part of the phononless conduction of a lightly doped compensated semiconductor is calculated. It is shown that when the basis of localized atomic-like functions is used, the superlinear frequency dependence of the real part of the conduction corresponds to the approximately linear frequency dependence of the imaginary part of the conductivity. It has been found that at frequencies below the transition (crossover) frequency ??_cr from the linear to quadratic frequency dependence of the real part of conductivity, the dielectric loss tangent depends weakly on the frequency and it is determined by the relationship of ???_cr to the width of the impurity band. It is shown that measurements of the dielectric loss tangent can provide information on the localization radius of impurity states.     

Transport properties of Ti3Ir compound at low temperature

Electrical resistivity and magnetoresistivity of Ti₃Ir compound have been measured in the temperature range 2.0 K ≤T ≤ 300 K in absence as well as in presence of magnetic field upto 7.7 T. The low temperature resistivity shows aT ² behaviour whereas the high temperature resistivity shows a linear behaviour. The magnetoresistivity is positive and cannot be explained by simple s-d scattering model. The enhancement of the coefficient A of theT ² term and the deviation from the quadratic field dependence of the resistivity may be due to the anisotropy in the compound. This work has been performed under the grant by the Department of Science and Technology, Govt. of India.     

Low bias electron scattering in structure-identified single wall carbon nanotubes: role of substrate polar phonons

We have performed temperature-dependent electrical transport measurements on known structure single wall carbon nanotubes at low bias. The experiments show a superlinear increase in nanotube resistivity with temperature, which is in contradiction with the linear dependence expected from nanotube acoustic-phonon scattering. The measured electron mean free path is also much lower than expected, especially at medium to high temperatures (>100 K). A theoretical model that includes scattering due to surface polar phonon modes of the substrates reproduces the experiments very well. The role of surface phonons is further confirmed by resistivity measurements of nanotubes on aluminum nitride.     

Optical conductivity in the t − J model

Frequency dependent conductivity σ(ω) is calculated for the t ? J model by applying the memory function technique in terms of the Hubbard operators. The relaxation rate due to electron scattering on spin and charge dynamical fluctuations is calculated and a generalized Drude law for σ(ω) is obtained. For a model with an incoherent spectrum for one-hole excitations we obtain a universal form for frequency dependence of relaxation rate and conductivity in terms of the scaling function γ(ω/kT). The relaxation rate for the t ? J model is quite different from that one for the conventional Hubbard model in the strong coupling limit where it vanishes due to an exact cancellation of the intraband scattering and virtual interband transitions.     

High-field Hall resistivity and magnetoresistance of electron-doped Pr2-xCexCuO4-delta

We report resistivity and Hall effect measurements in electron-doped Pr2-xCexCuO4-delta films in magnetic field up to 58 T. In contrast to hole-doped cuprates, we find a surprising nonlinear magnetic field dependence of Hall resistivity at high field in the optimally doped and overdoped films. We also observe a crossover from quadratic to linear field dependence of the positive magnetoresistance in the overdoped films. A spin density wave induced Fermi surface reconstruction model can be used to qualitatively explain both the Hall effect and magnetoresistance.     

Quantum spin dynamics of the bilayer ferromagnet La Sr Mn O

We construct a theory of spin wave excitations in the bilayer manganite La_1.2Sr_1.8Mn₂O₇ based on the simplest possible double-exchange model, but including leading quantum corrections to the spin wave dispersion and damping. Comparison is made with recent inelastic neutron scattering experiments. We find that quantum effects account for some part of the measured damping of spin waves, but cannot by themselves explain the observed softening of spin waves at the zone boundary. Furthermore a doping dependence of the total spin wave dispersion and the optical spin wave gap is predicted. Received 15 January 2002 Published online 6 June 2002     

Temperature and concentration dependences of the electrical resistivity for alloys of plutonium with americium under normal conditions

The temperature and concentration dependences of the electrical resistivity for alloys of americium with plutonium are analyzed in terms of the multiband conductivity model for binary disordered substitution-type alloys. For the case of high temperatures (T > Θ_D, Θ_D is the Debye temperature), a system of self-consistent equations of the coherent potential approximation has been derived for the scattering of conduction electrons by impurities and phonons without any constraints on the interaction intensity. The definitions of the shift and broadening operator for a single-electron level are used to show qualitatively and quantitatively that the pattern of the temperature dependence of the electrical resistivity for alloys is determined by the balance between the coherent and incoherent contributions to the electron-phonon scattering and that the interference conduction electron scattering mechanism can be the main cause of the negative temperature coefficient of resistivity observed in some alloys involving actinides. It is shown that the great values of the observed resistivity may be attributable to interband transitions of charge carriers and renormalization of their effective mass through strong s-d band hybridization. The concentration and temperature dependences of the resistivity for alloys of plutonium and americium calculated in terms of the derived conductivity model are compared with the available experimental data.     

Fe基非晶态合金的低温电阻研究

本文报道Fe_100-xB_x,Fe_87-xSi_xB₁₃,(Fe_1-xCo_x)₇₈Si_9.5B_12.5,(Fe_1-xM_x)_80-84B_16-20(M=Zr,V,Nb,Ta,Cr,Mo,W,Mn)非晶态合金的 关键词：     

Frequency dependence of low-temperature phononless conductivity in disordered systems

The frequency dependence of resonant phononless hopping conductivity in disordered systems with pointlike centers of localization in the low-temperature limit is considered within the framework of the pair approximation. It is shown that the existing theory that predicts the power-mode frequency dependence of the low-frequency phononless hopping conductivity σ(ω) and a transition from linear to quadratic dependence (crossover) when frequency increases may become invalid, and the quadratic frequency dependence may never manifest itself at all.     

Distribution function of Hubbard quasiparticles in two-dimensional systems with inclusion of dynamic processes of spin-fluctuation scattering

Spin-fluctuation scattering in an ensemble of strongly correlated electrons in CuO₂ planes of high-temperature superconductors is investigated. It is demonstrated that this process significantly modifies the distribution function of Hubbard quasiparticles. The influence of spin-fluctuation scattering mathematically manifests itself in the appearance of the correction to the strength operator in the numerator of the single-fermion Green’s function dependent on the Matsubara frequency. This correction differently renormalizes the spectral intensity on different energy scales and determines the dependence of the Migdal discontinuity on the electron concentration in the system.     

Effects of absorbed hydrogen on the electronic properties of (Zr2Fe)(1-x)H(x) metallic glasses

The electrical conductivity (σ) of hydrogen doped (Zr(2)Fe)(1-x)H(x) metallic glasses has been measured in the temperature range from 290 down to 5 K. The decrease of the room temperature conductivity and the increase of its temperature coefficient are explained as consequences of increased disorder due to hydrogen doping. σ(T) for (Zr(2)Fe)(1-x)H(x) metallic glasses at low temperatures decreases with the increase of temperature, forming a minimum at T(min), before it starts a monotonic increase with increasing temperature. Both the functional forms and the magnitudes of the observed σ(T) are interpreted in terms of weak localization, electron-electron interaction and spin-fluctuation effects. Our results reveal that the electron-phonon scattering rate varies with the square of temperature from low temperatures up to 100 K and changes behaviour to a linear form at higher temperatures. At low temperatures, the minimum in σ(T) is shifted to higher temperatures, which is ascribed to the increase of the screening parameter of the Coulomb interaction F* associated with the enhancement of the spin fluctuations arising from the increase of the hydrogen doping. The spin-orbit scattering rate and the electron diffusion constant are reduced by hydrogen doping.     

Magnetotransport of lanthanum doped RuSr<Subscript>2</Subscript>GdCu<Subscript>2</Subscript>O<Subscript>8</Subscript> – the role of gadolinium

Strongly underdoped RuSr_1.9La_0.1GdCu₂O₈ has been comprehensively studied by dc magnetization, microwave measurements, magnetoresistivity and Hall resistivity in fields up to 9 T and temperatures down to 1.75 K. Electron doping by La reduces the hole concentration in the CuO₂ planes and completely suppresses superconductivity. Microwave absorption, dc resistivity and ordinary Hall effect data indicate that the carrier concentration is reduced and a semiconductor-like temperature dependence is observed. Two magnetic ordering transitions are observed. The ruthenium sublattice orders antiferromagnetically at 155 K in low applied magnetic fields, and the gadolinium sublattice orders antiferromagnetically at 2.8 K. The magnetoresistivity in this compound exhibits a complicated temperature dependence due to the occurence of the two magnetic orders and spin fluctuations. It is shown that the ruthenium magnetism influences the conductivity in the RuO₂ layers while the gadolinium magnetism influences the conductivity in the CuO₂ layers. The magnetoresistivity is isotropic above 4 K, but it becomes anisotropic close to the gadolinium antiferromagnetic order temperature.     

非晶态Fe87-xSixB13合金的磁化强度、电阻与温度的关系

本文研究了非晶态Fe_87-xSi_xB₁₃(x=0,9.6,14.5)合金的饱和磁化强度、电阻率与温度的关系。得到样品的居里温度T_C和晶化温度T_cr随Si含量的增加而明显提高。低温下的热磁关系符合布洛赫的T^3/2定律,计算出自旋波劲度系数D从x=0时的62meV·A²增加到x=14.5时的111meV·A²。从D值和Handrich理 关键词：     

Behavior features of phononless hopping conductivity in the vicinity of the crossover from the linear to quadratic frequency dependence

It was shown that the Coulomb interaction between electrons of “active” (resonance) pairs plays a major role in a wide frequency range. Therefore, the conventional approach to the calculation of the super-linearity of the frequency dependence of ac conductivity, based on the single-particle density of states with a Coulomb gap, is inapplicable to the calculation of high-frequency phononless conductivity. The observed superlinearity of the frequency dependence of the phononless hopping conductivity can manifest itself immediately in the region of the crossover from the linear to quadratic frequency dependence of the conductivity.