Enhanced ternary memory performances with high-temperature tolerance in AIE@PBI composites by tuning the azobenzol substituents on tetraphenylethylene

The design of functional composites with desired film crystallinity and definite switching mechanism is the key to achieve high performance multilevel memorizers. Three aggregation-induced emission (AIE) molecules containing different azobenzol (Azo) groups on tetraphenylethylene (TPE) were synthesized and embedded into polybenzimidazole (PBI) to prepare AIE@PBI composites, which were further fabricated as FTO/TPE-Azo-n@PBI/Ag (n = 01, 02, 04) devices with well-defined crystalline characteristics. These devices can demonstrate clear ternary memory performances, among which TPE-Azo-04@PBI-based one exhibited the best performance with the current ratio of 1:10^4.2:10^6.7 for “OFF”, “ON1”, and “ON2” states. The ternary memory mechanism can be designed as the combination of aggregation-induced current/conductance (AIC) and packing conformational change-induced charge transfer in TPE-Azo-n, which were verified by UV–Vis, in-situ XRD, and single-crystal structural determinations and theoretical calculations. The trend of ternary memory performance improved by increasing Azo groups on TPE can be attributed to the larger steric hindrance due to the more Azo groups, which can inhibit their aggregations and packing conformational change in PBI-confined space. Specially, this kind of devices can present high-temperature tolerance of 350 ^°C. The verified mechanism in this work might provide a practicable model for the design of new high-density memorizers with good environmental tolerance. The current ratio of OFF/ON1/ON2 increases with the Azo.     

A Solution‐Processable Donor–Acceptor Compound Containing Boron(III) Centers for Small‐Molecule‐Based High‐Performance Ternary Electronic Memory Devices

A novel small‐molecule boron(III)‐containing donor–acceptor compound has been synthesized and employed in the fabrication of solution‐processable electronic resistive memory devices. High ternary memory performances with low turn‐on (V_Th1=2.0 V) and distinct threshold voltages (V_Th2=3.3 V), small reading bias (1.0 V), and long retention time (>10⁴ seconds) with a large ON/OFF ratio of each state (current ratio of “OFF”, “ON1”, and “ON2”=1:10³:10⁶) have been demonstrated, suggestive of its potential application in high‐density data storage. The present design strategy provides new insight in the future design of memory devices with multi‐level transition states.     

Different Steric‐Twist‐Induced Ternary Memory Characteristics in Nonconjugated Copolymers with Pendant Naphthalene and 1,8‐Naphthalimide Moieties

Herein, novel random copolymers PMNN and PMNB were designed and synthesized, and the memory devices Al/ PMNN and PMNB /ITO both exhibited ternary memory performance. The switching voltages of the OFF–ON1 and ON1–ON2 transitions for both memory devices are around −2.0 and −3.5 V, respectively, and the ON1/OFF, ON2/ON1 current ratios are both up to 10³. The observed tristable electrical conductivity switching could be attributed to field‐induced conformational ordering of the naphthalene rings in the side chains, and subsequent charge trapping by 1,8‐naphthalimide moieties. More interestingly, by adjusting the connection sites of 1,8‐naphthalimide moieties to tune the steric‐twist effect, different memory properties were achieved ( PMNN showed nonvolatile write once, read many (WORM) memory behavior, whereas PMNB showed volatile static RAM (SRAM) memory behavior). This result will offer a guideline for the design of different high‐performance multilevel memory devices by tuning the steric effects of the chemical moieties.     

Electrical bistability of organic devices with a polymeric thin film for nonvolatile data storage

In this study, organic memory devices with a single active layer between the two external electrodes were fabricated using an electron‐donor type conjugated polymer and an electron‐acceptor type small organic molecule. The active layer of the memory device was prepared by blending polystyrene, poly[10‐(2′‐ethylhexyl)phenothiazine‐3,7‐diyl], and tetracyanoquinodimethane in 1,2‐dichlorobenzene. The device initially showed a low‐conductance state (OFF state) in the low‐voltage range, and an abrupt current increase, corresponding to the transition to a high‐conductance state (ON state), occurred at a certain voltage (V_th). The ON state could be reverted to the OFF state by applying a voltage higher than V_th. The current ratio between the two states was about 10³ (up to 10⁵). After this transition, the device remained in the ON state even after the applied voltage was removed, and this indicated the nonvolatile characteristics of the device. There was no sharp current degradation in the OFF or ON states for 4500 s of continuous bias. The device‐to‐device performance fluctuation was measured, and the conduction mechanisms in the ON and OFF states were examined by fitting the data to well‐known theoretical models. © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012     

In Situ Synthesis and Nonvolatile Rewritable‐Memory Effect of Polyaniline‐Functionalized Graphene Oxide

A new polyaniline (PANI)‐functionalized graphene oxide (GO‐PANI) was prepared by using an in situ oxidative graft polymerization of aniline on the surface of GO. Its highest occupied molecular orbital (HOMO), lowest unoccupied molecular orbital (LUMO), ionization potential (IP), and electron affinity (EA) values experimentally estimated by the onset of the redox potentials were ?5.33, ?3.57, 5.59, and 3.83 eV, respectively. A bistable electrical‐switching effect was observed in electronic device with the GO‐PANI film sandwiched between the indium tin oxide (ITO) and Al electrodes. This device exhibited two accessible conductivity states, that is, the low‐conductivity (OFF) state and the high‐conductivity (ON) state, and can be switched to the ON state under a negative electrical sweep, and can also be reset to the initial OFF state by a reverse (positive) electrical sweep. The ON state is nonvolatile and can withstand a constant voltage stress of ?1 V for 3 h and 10⁸ read cycles at ?1 V under ambient conditions. The nonvolatile nature of the ON state and the ability to write, read, and erase the electrical states, fulfill the functionality of a rewritable memory. An ON/OFF current ratio of more than 10⁴ at ?1 V achieved in this memory device is high enough to promise a low misreading rate through the precise control of the ON and OFF states. The mechanism associated with the memory effects was elucidated from molecular simulation results.     

Synthesis,Physical Properties and Memory Device Application of a Twelve‐Ring Fused Twistheteroacene

Developing new organic conjugated materials for high density memory devices is highly desirable. In this research, a novel donor–acceptor‐type twelve‐ring fused twistheteroacene, 2,7,19,24‐tetra‐tert ‐butyl‐13,30‐didodecyl‐9,17,26,34‐tetraphenyl benzo[8′,9′]triphenyleno[2′,3′:7,8]dibenzo[b,e][1,4]dioxino[1,2,3,4‐lmn]dibenzo[6′,7′:10′,11′]tetraceno[2′,3′:5,6][1,4]dioxino[2,3‐f][3,8]phenanthroline‐12,14,29,31(13H ,30H )‐tetraone ( DPyN ) has been synthesized and characterized. It displays high thermal stability, possesses a broad absorption band centered at 510 and 538 nm, and emits red fluorescence in organic solvents. A solution‐processed memory device with DPyN as an active element shows an excellent memory performance with an ON/OFF current ratio of 10^3.46:1 and a threshold voltage of −2.44 V.     

Ternary Flexible Electro‐resistive Memory Device based on Small Molecules

Flexible memory devices have continued to attract more attention due to the increasing requirement for miniaturization, flexibility, and portability for further electronic applications. However, all reported flexible memory devices have binary memory characteristics, which cannot meet the demand of ever‐growing information explosion. Organic resistive switching random access memory (RRAM) has plenty of advantages such as simple structure, facile processing, low power consumption, high packaging density, as well as the ability to store multiple states per bit (multilevel). In this study, we report a small molecule‐based flexible ternary memory device for the first time. The flexible device maintains its ternary memory behavior under different bending conditions and within 500 bending cycles. The length of the alkyl chains in the molecular backbone play a significant role in molecular stacking, thus guaranteeing satisfactory memory and mechanical properties.     

Novel Conjugated Side Chain Fluorinated Polymers Based on Fluorene for Light-Emitting and Ternary Flash Memory Devices

Three novel conjugated polymers based on 9,9′-dioctylfluorene unit and isoindolo[2,1-a]benzimidazol-11-one with different fluorine substituents (0, 2 and 4) were synthesized. PLED and resistive memory devices based on these polymers were prepared consequently. PLED based on four-fluorinated polymer showed the highest maximum brightness of 3192 cd m⁻² with almost 5-fold increase of current efficiency 8-fold increase of external quantum efficiency compared to that of the other two, and all the PLEDs exhibited good emission stability with no noticeable change of electroluminescence even under high voltage of 10 V. The memory device of doubly-fluorinated polymer exhibited ternary flash behavior with threshold voltages below −2.5 V, while device of four-fluorinated polymer possessed ON/OFF current ratio above 10⁴. Impact of fluorine substitutions on the performance of devices were briefly investigated. The results revealed that the improvement of device performance might not scale with the increasing number of fluorine substitutions, and the four-fluorine-substituted polymer and doubly-fluorinated polymer could be encouraging materials for applications of PLED and resistive memory device and worth of further design of other new polymer systems.     

Covalent Functionalization of Black Phosphorus with Conjugated Polymer for Information Storage

Major disadvantages of black phosphorus (BP) are its poor air‐stability and poor solubility in common organic solvents. The best way to solve this problem is to incorporate BP into a polymer backbone or a polymer matrix to form novel functional materials that can provide both challenges and opportunities for new innovation in optoelectronic and photonic applications. As a proof‐of concept application, we synthesized in situ the first highly soluble conjugated polymer‐covalently functionalized BP derivative (PDDF‐g‐BP) which was used to fabricate a resistive random access memory (RRAM) device with a configuration of Au/PDDF‐g‐BP/ITO. In contrast to PDDF without memory effect, PDDF‐g‐BP‐based device exhibits a nonvolatile rewritable memory performance, with a turn‐on and turn‐off voltages of +1.95 V and ?2.34 V, and an ON/OFF current ratio of 10⁴. The current through the device in both the ON and OFF states is still kept unchanged even at 200th switching cycle. The PDDF/BP blends show a very unstable memory performance with a very small ON/OFF current ratio.     

Towards Highly‐Efficient Phototriggered Data Storage by Utilizing a Diketopyrrolopyrrole‐Based Photoelectronic Small Molecule

A cooperative photoelectrical strategy is proposed for effectively modulating the performance of a multilevel data‐storage device. By taking advantage of organic photoelectronic molecules as storage media, the fabricated device exhibited enhanced working parameters under the action of both optical and electrical inputs. In cooperation with UV light, the operating voltages of the memory device were decreased, which was beneficial for low energy consumption. Moreover, the ON/OFF current ratio was more tunable and facilitated high‐resolution multilevel storage. Compared with previous methods that focused on tuning the storage media, this study provides an easy approach for optimizing organic devices through multiple physical channels. More importantly, this method holds promise for integrating multiple functionalities into high‐density data‐storage devices.     

Molecular Logic Gates and Switches Based on 1,3,4‐Oxadiazoles Triggered by Metal Ions

Organic molecular devices for information processing applications are highly useful building blocks for constructing molecular‐level machines. The development of “intelligent” molecules capable of performing logic operations would enable molecular‐level devices and machines to be created. We designed a series of 2,5‐diaryl‐1,3,4‐oxadiazoles bearing a 2‐(para‐substituted)phenyl and a 5‐(o‐pyridyl) group (substituent X=NMe₂, OEt, Me, H, and Cl; 1 a – e ) that form a bidentate chelating environment for metal ions. These compounds showed fluorescence response profiles varying in both emission intensity and wavelength toward the tested metal ions Ni²⁺, Cu²⁺, Zn²⁺, Cd²⁺, Hg²⁺, and Pb²⁺ and the responses were dependent on the substituent X, with those of 1 d being the most substantial. The 1,3,4‐oxadiazole O or N atom and pyridine N atom were identified as metal‐chelating sites. The fluorescence responses of 1 d upon metal chelation were employed for developing truth tables for OR, NOR, INHIBIT, and EnNOR logic gates as well as “ON‐OFF‐ON” and “OFF‐ON‐OFF” fluorescent switches in a single 1,3,4‐oxadiazole molecular system.     

Push–Pull archetype of reduced graphene oxide functionalized with polyfluorene for nonvolatile rewritable memory

A solution‐processable PFTPA‐convalently grafted reduced graphene oxide (RGO‐PFTPA) was synthesized by the 1,3‐dipolar cycloaddition of azomethine ylide. Bistable electrical switching and nonvolatile rewritable memory effects were demonstrated in a sandwich structure of indium tin oxide/RGO‐PFTPA/Al. The switch‐on voltage of the as‐fabricated device was around ?1.4 V, and the ON/OFF‐state current ratio was more than 10³. The ON–OFF transition process is reversible because the application of a high enough positive voltage can induce the reverse transfer of electrons, reducing the conductivity back to its initial OFF state. Both the OFF and ON states are accessible and very stable under a constant voltage stress of ?1 V for up to 3 h, or under a pulse voltage stress of ?1 V for up to 10⁸ continuous read cycles (pulse period = 2 μs, pulse width = 1 μs). © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012     

Synthesis and properties of high‐performance functional polyimides containing rigid nonplanar conjugated tetraphenylethylene moieties

A simple diamine (TetraPEDA) containing rigid nonplanar conjugated tetraphenylethylene (TetraPE) moieties was designed and synthesized through Wittig–Horner and Suzuki coupling reactions. Four kinds of high‐performance functional polyimides (PI) were thus prepared by the polymerization of TetraPEDA and four dianhydrides, respectively. Because of the introduction of the aromatic rigid nonplanar TetraPE structure, the PI exhibited special fluorescent characteristics, as the maximum fluorescence emission of the four PI was observed at 425–505 nm in NMP solution and at 470–491 nm in film state. Also these organo‐soluble PI showed outstanding properties, such as low dielectric constant (even without fluorinated substituent), light color, high glass transition temperatures (382–443 °C) and thermal stability in air (T_d5% up to 565 °C), and excellent mechanical properties. The polymer memory devices with the configuration of indium tin oxide/PI/aluminum (ITO/PI/Al) exhibited distinct volatile memory characteristics of static random access memory, with an ON/OFF current ratio of 1 × 10⁴ to 1 × 10⁵. These functional PI showed attractive potential applications in the field of high performance flexible polymer photoconducting devices or fluorescent polymer memory devices. © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2013     

Switchable Dielectric Phase Transition Triggered by Pendulum‐Like Motion in an Ionic Co‐crystal

Molecular‐based ionic co‐crystals, which have the merits of low‐cost/easy fabrication processes and flexible structure and functionality, have already exhibited tremendous potential in molecular memory switches and other electric devices. However, dipole (ON/OFF switching) triggering is a huge challenge. Here, we introduce a pendulum‐like dynamic strategy to induce the order–disorder transition of a co‐crystal [C₅H₇N₃Cl]₃[Sb₂Br₉] (compound 1 ). Here, the anion and cation act as a stator and a pendulum‐like rotor (the source of the dielectric switch), respectively. The temperature‐dependent dielectric and differential scanning calorimetry (DSC) analyses reveal that 1 undergoes a reversible phase transition, which stems from the order–disorder transition of the cations. The thermal ON/OFF switchable motions make 1 a promising candidate to promote the development of bulk crystals as artificial intelligent dielectric materials. In addition, the pendulum‐like molecular dynamics and distinct arrangements of two coexisting ions with a notable offset effect promotes/hinders dipolar reorientation after dielectric transition and provides a rarely observed but fairly useful and feasible strategy for understanding and modulating the dipole motion in crystalline electrically polarizable materials.     

Realizing fast photoinduced recovery with polyfluorene-block-poly(vinylphenyl oxadiazole) block copolymers as electret in photonic transistor memory devices

Photonic field-effect transistor (FET) memory devices offer unique advantages owing to their solution processability, low cost production, and their lightweight and structural flexibility. Despite the plethora of research demonstrated the photon based programming process, limited reports are available for photoinduced recovery mechanism in such devices. To investigate the influence of polymer electret design on photonic memory performance, poly(9,9-dioctylfluorene) (PFO)–block–poly (vinylphenyl oxadiazole) (POXD) conjugated block copolymers were employed to a photonic FET memory with n-type semiconducting channel. The studied device exhibited bistable ON/OFF current states after electrical programming and photoinduced recovery (erasing) processes. The device operating mechanism was elaborated by comparing the device performance with respective electrets of PFO-b-POXD and PFO-b-polystyrene (PS) and PFO homopolymer. We found that PFO-b-POXD can efficiently generate photoexciton under UV illumination to neutralize the trapped hole, and assuage the hole trapping propensity of PFO segment, simultaneously. By optimizing the POXD content in the block copolymer, a decent memory ratio (I_ON/I_OFF) of ~10⁵ was achieved after 10⁴ s, indicating its superior long-term stability and data discernibility. This research shows the judicious strategy to design polymer electret for photonic memory, and it opens up the possibility of developing photonic memory, human perception and futuristic communication systems using simple, convenient and reliable optoelectronic technique.     

Semi-conductive,Switchable Dielectric and Photoluminescent Properties of Two High-Temperature Phase Transition Hybrids

Bistable switches (electrical switching between “ON” and “OFF” bistable states) have gradually developed into an ideal category of highly intelligent materials, due to their significant applications in optical technology, signal processors, data storage and other switchable media applications in the field of electrical devices. Here, we successfully designed and synthesized [(FC₆H₄C₂H₄NH₃)₂MCl₄]_n(FC₆H₄C₂H₄NH₃⁺)=deprotonated 4-fluoro- phenethylamine; M=Cd ( 1 ), Mn ( 2 )), which realized the coupling of thermo-dielectric switching characteristics, semi-conductor characteristics and photo-luminescent properties. DSC (differential scanning calorimetry) and dielectric measurements show that 1 is a sensitive dielectric bistable switch between the high dielectric (ON) and low dielectric (OFF) states. The temperature-variable single crystal structure shows that the both 1 and 2 undergo a high-temperature reversible phase transition around 383 K/380 K, which is caused by the order-disordered transformation of organic cations and the slight distortion of the inorganic framework. In particular, 1 shows outstanding switchable dielectric behavior and semiconducting properties. Further, 1 and 2 emit strong green and yellow luminescence at 527 and 595 nm, respectively.     

Donor–Acceptor Oligoimides for Application in High‐Performance Electrical Memory Devices

Two new oligoimides, OI(APAP-6FDA) and OI(APAN-6FDA) , which consisted of electron‐donating N‐(4‐aminophenyl)‐N‐phenyl‐1‐aminopyrene ( APAP ) or N‐(4‐aminophenyl)‐N‐phenyl‐1‐aminonaphthalene ( APAN ) moieties and electron‐accepting 4,4′‐(hexafluoroisopropylidene)diphthalic anhydride ( 6FDA ) moieties, were designed and synthesized for application in electrical memory devices. Such devices, with the indium tin oxide (ITO)/oligoimide/Al configuration, showed memory characteristics, from high‐conductance Ohmic current flow to negative differential resistance (NDR), with corresponding film thicknesses of 38 and 48 nm, respectively. The 48 nm oligoimide film device exhibited NDR electrical behavior, which resulted from the diffusion of Al atoms into the oligoimide layer. On further increasing the film thickness to 85 nm, the OI(APAP-6FDA) film device showed a reproducible nonvolatile “write once read many” (WORM) property with a high ON/OFF current ratio (more than ×10⁴). On the other hand, the device that was based on the 85 nm OI(APAN-6FDA) film exhibited a volatile static random access memory (SRAM) property. The longer conjugation length of the pyrene unit compared to that of a naphthalene unit was considered to be responsible for the different memory characteristics between these two oligoimides. These experimental results suggested that tunable switching behavior could be achieved through an appropriate design of the donor–acceptor oligoimide structure and controllable thickness of the active memory layer.     

Novel high‐performance polymer memory devices containing (OMe)2tetraphenyl‐p‐phenylenediamine moieties

The functional polyimide (OMe)₂TPPA‐6FPI ( PI ) and the polyamide (OMe)₂TPPA‐6FPA ( PA ) consisting of electron‐donating N,N′‐bis(4‐aminophenyl)‐N,N′‐di(4‐methoxylphenyl)1,4‐phenylenediamine [(OMe)₂TPPA‐diamine] for memory application were prepared in this study. These polyimide and polyamide memory devices were fabricated with the sandwich configuration of indium tin oxide (ITO)/polymer/Al, and could be switched from the initial low‐conductivity (OFF) state to the high‐conductivity (ON) state with high ON/OFF current ratios of 10⁷ and 10⁹, respectively. PI exhibited dynamic random access memory (DRAM) performance, whereas PA showed static random access memory (SRAM) behavior. To get more insight into the memory behaviors of these two different types of polymer memory devices, molecular simulation on the basic unit was carried out. Furthermore, the differences of highest occupied molecular orbital (HOMO) energy level, lowest unoccupied molecular orbital (LUMO) charge density isosurfaces, dipole moment, and linkage conformation between PI and PA were found to affect the volatile memory behavior. Both polymer memory devices revealed excellent stability with long operation time of 10⁴ s at continuous applied voltage of ‐2 V. The effect of polymer thickness on the volatile memory behavior of PA was also investigated in this study. © 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2011     

Rational Design of an “OFF–ON” Phosphorescent Chemodosimeter Based on an Iridium(III) Complex and Its Application for Time‐Resolved Luminescent Detection and Bioimaging of Cysteine and Homocysteine

Biothiols, such as cysteine (Cys) and homocysteine (Hcy), play very crucial roles in biological systems. Abnormal levels of these biothiols are often associated with many types of diseases. Therefore, the detection of Cys (or Hcy) is of great importance. In this work, we have synthesized an excellent “OFF‐ON” phosphorescent chemodosimeter 1 for sensing Cys and Hcy with high selectivity and naked‐eye detection based on an Ir^III complex containing a 2,4‐dinitrobenzenesulfonyl (DNBS) group within its ligand. The “OFF‐ON” phosphorescent response can be assigned to the electron‐transfer process from Ir^III center and C^N ligands to the DNBS group as the strong electron‐acceptor, which can quench the phosphorescence of probe 1 completely. The DNBS group can be cleaved by thiols of Cys or Hcy, and both the ³M LCT and ³LC states are responsible for the excited‐state properties of the reaction product of probe 1 and Cys (or Hcy). Thus, the phosphorescence is switched on. Based on these results, a general principle for designing “OFF‐ON” phosphorescent chemodosimeters based on heavy‐metal complexes has been provided. Importantly, utilizing the long emission‐lifetime of phosphorescence signal, the time‐resolved luminescent assay of 1 in sensing Cys was realized successfully, which can eliminate the interference from the short‐lived background fluorescence and improve the signal‐to‐noise ratio. As far as we know, this is the first report about the time‐resolved luminescent detection of biothiols. Finally, probe 1 has been used successfully for bioimaging the changes of Cys/Hcy concentration in living cells.     

Fully transparent nonvolatile resistive polymer memory

We present a fully transparent nonvolatile resistive polymer memory device based on an anthracene‐containing partially aliphatic polyimide along with indium tin oxide (ITO) top and bottom electrodes. High transmittance of over 90% in the wavelength range of 400 to 800 nm is accomplished with an ITO/polyimide/ITO/glass device. The device shows unipolar write‐once‐read‐many times (WORM) memory behavior with an ON/OFF current ratio of ～2 × 10³, and the ratio remained without any significant degradation for over 10⁴ s. The memory behavior of the device is considered to be governed by trap‐controlled space‐charge limited conduction (SCLC) and local filament formation. Based on molecular simulation of the polyimide, the location of energy states is different from that in the conventional charge transfer (CT) mechanism. Despite the relatively low ON/OFF current ratio, our results can give insight into the development of fully transparent memory device. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2016 , 54, 918–925