Relation between space-charge-limiting current and electric field enhancement factor at curved surface cathode

A two-dimensional solution of space-charge-limiting current for a high current vacuum diode with a spherical cathode is presented. The relation between space-charge-limiting current and electric field enhancement factor at the cathode surface for the diode with a curved surface cathode is also discussed. It is shown that compared with the current given by the conventional Child—Langmuir law, which describes the one-dimensional space-charege-limiting current, the two-dimensional space-charge-limiting current in such a diode is enhanced due to the electric-field enhancement along the cathode surface. Among practical parameter ranges, enhancement factor η_b approximately satisfies η_b ≈ Aβⁿ, where β is the electric field enhancement factor at the cathode surface, and n is a constant between 1 and 2, which is confirmed to be universal for the diodes with curved surface cathodes.     

Enhancement of Dielectronic Recombination by External Electromagnetic Fields

The enhancement of the dielectronic recombination rate of lithiumlike Ne⁷⁺ and O⁵⁺ ions by external electromagnetic fields has been measured at the storage ring CRYRING. The energy range covered all 1s ²2pnl dielectronic recombination resonances attached to the 2s→2p core excitation. Electric fields up to 1436 V/cm were applied in the Ne⁷⁺ experiment and the saturation of the enhancement with increasing electric field could clearly be seen. In the O⁵⁺ experiment the enhancement was studied as a function of the Rydberg quantum number n.

     

栅极调制纳米线的场增强因子计算

利用悬浮球模型和镜像电荷法计算了栅极调制纳米线的顶端表面电场,给出了场发射增强因子表达式β=1/2（3.5+L/r₀+W）,式中L与r₀分别是纳米线长度与顶端表面曲率半径,W是由栅孔半径R、阴极与栅极间距d以及纳米线自身几何参数所决定的函数．结果表明,纳米线长径比对场增强因子的影响很显著;当阴极与栅极间距较近时,场增强因子随d的增加而减小 关键词： 栅极调制纳米线 场增强因子 悬浮球     

Recombination of electrons with highly charged heavy ions at very low energies

Recombination of highly charged ions with free electrons is studied in merged-beams experiments at the UNILAC accelerator in Darmstadt and at the heavy-ion storage ring TSR in Heidelberg. Unexpected high recombination rates are observed for a number of ions at very low energiesE _cm in the electron-ion center-of-mass frame. In particular, theoretical estimates for radiative recombination are dramatically exceeded by the experimental recombination rates of U²⁸⁺ ions nearE _cm=0 eV. The observations point to a general phenomenon in electron ion recombination depending onE _cm, on the ion charge state, and possibly also on electron density, electron beam temperature, and strength of external magnetic fields.     

Isotope-selective infrared multiphoton dissociation of CF3Br in a supersonic free jet

The carbon-isotope selectivity in the multiphoton dissociation of CF₃Br is studied in the collisional region of supersonic free jet. The isotopic abundance of¹²C and¹³C in C₂F₆ formed by recombination of the dissociation products is measured with a quadrupole mass spectrometer. An enrichmet factor of 9.4 is obtained for¹²C with the 9R(30)CO₂ laser line while the factor of 6.9 is obtained for¹³C with the 9P(16) line.     

Photoionization and electron–ion recombination of Cr I

Using the unified method, the inverse processes of photoionization and electron–ion recombination are studied in detail for neutral chromium, (), for the ground and excited states. The unified method based on close-coupling approximation and R-matrix method (i) subsumes both the radiative recombination (RR) and dielectronic recombination (DR) for the total rate and (ii) provides self-consistent sets of photoionization cross sections σ_PI and recombination rates α_RC. The present results show in total photoionization of the ground and excited states an enhancement in the background at the first excited threshold, state of the core. One prominent phot-excitation-of-core (PEC) resonance due to one dipole allowed transition (⁶S-⁶P^o) in the core is found in the photoionization cross sections of most of the valence electron excited states. Structures in the total and partial photoionization, for ionization into various excited core states and ground state only, respectively, are demonstrated. Results are presented for the septet and quintet states with n≤10 and l≤9 of Cr I. These states couple to the core ground state ⁶S and contribute to the recombination rates. State-specific recombination rates are also presented for these states and their features are illustrated. The total recombination rate shows two DR peaks, one at a relatively low temperature, at 630 K, and the other around 40,000 K. This can explain existence of neutral Cr in interstellar medium. Calculations were carried out in LS coupling using a close-coupling wave function expansion of 40 core states. The results illustrate the features in the radiative processes of Cr I and provide photoionization cross sections and recombination rates with good approximation for this astrophysically important ion.     

The p recombination layer in tunnel junctions for micromorph tandem solar cells

A new tunnel recombination junction is fabricated for n–i–p type micromorph tandem solar cells. We insert a thin heavily doped hydrogenated amorphous silicon (a-Si:H) p + recombination layer between the n a-Si:H and the p hydrogenated nanocrystalline silicon (nc-Si:H) layers to improve the performance of the n–i–p tandem solar cells. The effects of the boron doping gas ratio and the deposition time of the p-a-Si:H recombination layer on the tunnel recombination junctions have been investigated. The current-voltage characteristic of the tunnel recombination junction shows a nearly ohmic characteristic, and the resistance of the tunnel recombination junction can be as low as 1.5 ·cm 2 by using the optimized p-a-Si:H recombination layer. We obtain tandem solar cells with open circuit voltage V oc = 1.4 V, which is nearly the sum of the V oc s of the two corresponding single cells, indicating no V oc losses at the tunnel recombination junction.     

Tuning SERS for living erythrocytes: Focus on nanoparticle size and plasmon resonance position

Surface‐enhanced Raman spectroscopy (SERS) is a unique technique to study submembrane hemoglobin (Hb_sm) in erythrocytes. We report the detailed design of SERS experiments on living erythrocytes to estimate dependence of the enhancemen t factor for main Raman bands of Hb_sm on silver nanoparticle (AgNP) properties. We demonstrate that the enhancement factor for ν 4/A1g, ν 10/B1g and A2g Raman bands of Hb_sm varies from 10⁵ to 10⁷ under proposed experimental conditions with 473 nm laser excitation. For the first time we show that the enhancement of Raman scattering increases with the increase in the relative amount of small NPs in colloids, with the decrease in AgNP size and with plasmon resonance shift to the shorter wavelength region. Obtained results can be explained by the ability of smaller AgNPs to get deeper into nano‐invaginations of the plasma membrane than larger AgNPs. This shortens the distance between small AgNPs and Hb_sm and, consequently, leads to the higher enhancement of Raman scattering of Hb_sm. The enhancement of higher wavenumber bands ν 10/B1g and A2g is more sensitive to AgNPs’ size and the relative amount of small AgNPs than the enhancement of the lower wavenumber band ν 4/A1g. This can be used for AgNP‐controlled enhancement of the desired Raman bands and should be taken into account in biomedical SERS experiments. Copyright © 2013 John Wiley & Sons, Ltd.     

First-order phase transition characteristic of the high temperature metal–semiconductor transition in [Ca<Subscript>2</Subscript>CoO<Subscript>3</Subscript>]<Subscript>0.62</Subscript>[CoO<Subscript>2</Subscript>]

Transportation and thermodynamic properties of misfit-layered polycrystalline [Ca₂CoO₃]_0.62[CoO₂] were measured in order to clarify the nature of metal– semiconductor transition (MST) at T _MS≈400 K, above which the simultaneous decrease of resistivity and increase of thermopower with temperature give rise to a great enhancement of thermoelectric power factor up to 1000 K. A first-order phase transition characteristic around T _MS was revealed by anomalies of resistivity, differential scanning calorimetry, and thermal expansion. The first-order characteristic of the MST can be rationalized from the Virial theorem at an itinerant to localized electron transition in the narrow e ^T band within the [CoO₂] plane. Above T _MS, the reduction of the retained delocalized states within the matrix of localized states and the enhancement of charge carrier effective mass with increasing temperature might account for the considerable enhancement of the thermopower.     

带栅极纳米线冷阴极的场增强因子研究

场增强因子是体现场发射冷阴极器件性能优劣的重要参数.利用静电场理论给出了一种带栅极(normal-gated)纳米线冷阴极的场增强因子表示式β=k₁{N²·(L-d₁)²+［1/k₁+(L-d₁)］²}^1/2，且进一步分析了几何参数对场增强因子的影响.结果表明，纳米线突出栅孔的部分(L-d₁)与栅孔半径越大，则场增强因子越大；而纳米线半径越小，则场增强因子越大；当L远大于d₁时满足β∝L/r₀.其中N=N₁(k₁r₀)/N₀(k₁r₀)，N₀(k₁r₀)和N₁(k₁r₀)分别代表零阶和一阶Neumann函数，k₁=0.8936/R，R为栅孔半径，L为纳米线长度，r₀为纳米线半径，d₁表示阴极与栅极间距.     

Thermostimulated luminescence of CdF2:Eu crystals

Using the method of fractional thermostimulated luminescence (FTSL), the temperature dependence of the mean activation energy of recombination processes in CdF₂:Eu³⁺ crystal was obtained. After thermal annealing of the crystal, thermostimulated luminescence peaks were identified. Anomalously low frequency factor (s=10⁷ s ^–1) of the recombination processes can be explained by the dependence of the resonance energy transfer probability on intercentre distance.The authors are very grateful to Dr. E. Kotomin for valuable comments and Dr. C. Paracchini for supply of CdF₂:Eu crystals.     

Frequency and density dependent radiative recombination processes in III–V semiconductor quantum wells and superlattices

In this paper we review the radiative recombination processes occurring in semiconductor quantum wells and superlattices under different excitation conditions. We consider processes whose radiative efficiency depends on the photogenerated density of elementary excitations and on the frequency of the exciting field, including luminescence induced by multiphoton absorption, exciton and biexciton radiative decay, luminescence arising from inelastic excitonic scattering, and electron-hole plasma recombination.

Semiconductor quantum wells are ideal systems for the investigation of radiative recombination processes at different carrier densities owing to the peculiar wavefunction confinement which enhances the optical non-linearities and the bistable behaviour of the crystal. Radiative recombination processes induced by multi-photon absorption processes can be studied by exciting the crystal in the transparency region under an intense photon flux. The application of this non-linear spectroscopy gives direct access to the excited excitonic states in the quantum wells owing to the symmetry properties and the selection rules for artificially layered semiconductor heterostructures.

Different radiative recombination processes can be selectively tuned at exciting photon energies resonant with real states or in the continuum of the conduction band depending on the actual density of photogenerated carriers. We define three density regimes in which different quasi-particles are responsible for the dominant radiative recombination mechanisms of the crystal: (i) The dilute boson gas regime, in which exciton density is lower than 10¹⁰ cm^-2. Under this condition the decay of free and bound excitons is the main radiative recombination channel in the crystal. (ii) The intermediate density range (n < 10¹¹ cm^-2) at which excitonic molecules (biexcitons) and inelastic excitonic scattering processes contribute with additional decay mechanisms to the characteristic luminescence spectra. (iii) The high density range (n ?10¹² cm^-2) where screening of the Coulomb interaction leads to exciton ionization. The optical transitions hence originate from the radiative decay of free-carriers in a dense electron-hole plasma.

The fundamental theoretical and experimental aspects of the radiative recombination processes are discussed with special attention to the GaAs/Al _x Ga_1-x As and Ga _x In_1-x As/Al _y In_1-y As materials systems. The experimental investigations of these effects are performed in the limit of intense exciting fields by tuning the density of photogenerated quasi-particles and the frequency of the exciting photons. Under these conditions the optical response of the quantum well strongly deviates from the well-known linear excitonic behaviour. The optical properties of the crystal are then no longer controlled by the transverse dielectric constant or by the first-order dielectric susceptibility. They are strongly affected by many-body interactions between the different species of photogenerated quasi-particles, resulting in dramatic changes of the emission properties of the semiconductor.

The systematic investigation of these radiative recombination processes allows us to selectively monitor the many-body induced changes in the linear and non-linear optical transitions involving quantized states of the quantum wells. The importance of these effects, belonging to the physics of highly excited semiconductors, lies in the possibility of achieving population inversion of states associated with different radiative recombination channels and strong optical non-linearities causing laser action and bistable behaviour of two-dimensional heterostructures, respectively.     

Kinetics of Oxygen Atom Production in R.F. Discharges of Moderate Pressures

The dissociation of molecular oxygen has been studied in a radiofrequency plasma at a pressure of 20 torr in a flow system. The results show that the main channel for dissociation is via electron excitation to the Herzberg and Schumann systems with negligible contribution of the channel involving the O₂(a¹Δg) metastable. While oxygen atom recombination can be followed outside the discharge region, kinetic data show that recombination within the discharge is effectively suppressed, probably as a consequence of a recombination assisted dissociation mechanism. This leads to high concentrations of O-atoms at the discharge exit.     

排列形状及阵列数目对纳米导线阵列场发射性能的影响

为了进一步研究纳米导线阵列的排列形状以及阵列数目对其场发射行为的影响，利用镜像悬浮球模型对正方形以及六边形排列的纳米导线阵列的场发射行为进行计算与模拟，近似的得到纳米导线阵列的场发射增强因子满足如下的变化趋势：β=h/ρ(1/1+W)+1/2(1/1+W)²+3,其中h为纳米导线的高度，ρ为纳米导线的半径，W是以R为自变量的函数，R为纳米导线阵列的间距.结果显示纳米导线阵列的排列形状对其场发射性能的影响较小，而阵列间距则是影响场发射性能的关键因素：当R<R₀时，场发射增强因子随着阵列间距的减小而急剧减小；当R>R₀时，场发射增强因子基本不变，其中R₀为导线阵列场发射的最佳间距.进一步研究表明改变纳米导线阵列的数目基本不会改变阵列的场发射性能随间距的变化趋势，但是随着阵列数目的增加，R₀会有一定程度的减小，场发射增强因子也会降低. 关键词： 纳米导线 场发射 增强因子 阵列数目     

Density dependence of recombination in the electron cooler of CRYRING

The electron-ion recombination rates of Ne¹⁰⁺ and D⁺ have been measured as a function of relative energy and electron density. We found a strong enhancement of e-Ne¹⁰⁺ recombination over expected radiative recombination rates below 1 meV relative energies, reaching a factor of 4 close to zero relative energy. Remarkably, the measured rate coefficients decrease as a function of electron density for both systems. Studies of recombination of D⁺ indicate that this density dependence may be due to temperature variations of the electron beam with the electron density.     

Evaluation of the rate constants of dissociative and ternary recombination reactions of argon ions on the basis of the results of ballistic experiments

AbstractExperimental data on the change in the electron density in the wake of a ballistic object traveling at velocities V _∞=3.4–4.9 km/s in argon at pressures p _∞=30–100 Torr are processed and analyzed. A reaction scheme is proposed which takes into account the recombination of charged particles, processes of ionic conversion, and the excited states of the atom. The solution of the equations of a nonequilibrium boundary layer for flow in the wake is used to formulate the inverse problem of determining the rate constants for dissociative recombination Ar ₂ ⁺ +e→Ar+Ar and ternary recombination Ar⁺+e+Ar→Ar+Ar. The “nearest-neighbor” approximation is used to obtain theoretically an expression for the ternary recombination coefficient as a function of temperature and pressure. Numerous solutions of inverse problems and a comparison with experiments demonstrates the validity of the expression obtained for the ternary recombination coefficient. It is shown that this expression is valid for moderate pressures and complements the Pitaevskii result for low pressures and the Langevin result for high pressures. Zh. Tekh. Fiz. 67, 12–18 (May 1997)     

Production of charged pions, kaons and antikaons in relativistic C + C and C + Au collisions

Production cross-sections of charged pions, kaons and antikaons have been measured in C+C and C+Au collisions at beam energies of 1.0 and 1.8 AGeV for different polar emission angles. The kaon and antikaon energy spectra can be described by Boltzmann distributions whereas the pion spectra exhibit an additional enhancement at low energies. The pion multiplicity per participating nucleon M(π⁺)/<A _part> is a factor of about 3 smaller in C+Au than in C+C collisions at 1.0 AGeV whereas it differs only little for the C and the Au target at a beam energy of 1.8 AGeV. The K⁺ multiplicities per participating nucleon M(K⁺)/ <A _part> are independent of the target size at 1 AGeV and at 1.8 AGeV. The K^- multiplicity per participating nucleon M(K^-)/ <A _part> is reduced by a factor of about 2 in C+Au as compared to C+C collisions at 1.8 AGeV. This effect might be caused by the absorption of antikaons in the heavy target nucleus. Transport model calculations underestimate the K^-/K⁺ ratio for C+C collisions at 1.8 AGeV by a factor of about 4 if in-medium modifications of K-mesons are neglected. Received: 10 December 1999 / Accepted: 14 November 2000     

Structure and dynamics of the He 2 * (a 3Σ u + molecular complex in condensed phases of helium

An investigation is made of the absorption spectra of triplet metastable helium molecules in the a ³Σ _u ⁺ state in liquid ⁴He and ³He at various pressures and in dense ³He gas. An analysis of the spectrum corresponding to the a ³Σ _u ⁺ → c ³Σ _g ⁺ transition confirms the conclusion that there is a microscopic bubble surrounding the molecule in liquid helium. A simple approximation is proposed for the wave function of the valence electron of the molecule and the parameters of the bubble are determined for various experimental conditions. The coefficient of molecular recombination in liquid ³He and ⁴He was determined experimentally at various pressures and in dense cold ³He gas. The results show good agreement with the theory of mutual recombination limited by molecular diffusion under conditions of strong van der Waals interaction. It is shown that in the condensed phases of helium the polarization of the molecules under the action of the magnetic field does not lead to suppression of their mutual recombination, and this is confirmed experimentally.     

Investigation of the intershell higher order resonant recombination and polarization of X-ray emission of B-like silicon ions

K-shell dielectronic, trielectronic, and quadruelectronic recombination and polarization of X-ray emission have been studied for the highly charged Si⁹⁺ ions in the initial ground state ²P_1/2 and the metastable state ²P_3/2 using the Flexible Atomic Code. It is found that the resonant recombination cross section from the long-lived metastable state is comparable in magnitude with that of the ground state, so it is important for plasma diagnostics. For Si⁹⁺(²P_1/2), trielectronic recombination contributions of nearly 25% to the total resonant recombination strength are predicted, which is less than previous calculations. We compare the degree of linear polarization for the eleven dominant resonant recombination satellite lines from the initial parent Si⁹⁺(²P_1/2) and Si⁹⁺(²P_3/2) ions. For the same X-ray lines, large variations of polarization are found between ²P_1/2 and ²P_3/2, which can be employed to diagnose formation mechanisms of intermediate resonance states and corresponding X-ray lines.     

On the enhancement of the recoilless fraction in restricted geometries

The enhancement of recoilless fraction (f factor) in restricted geometries is studied. The experiments were carried out using the¹¹⁹Sn resonance in SnCl₄ molecules trapped in porous glass. A theoretical approach to explain the increase of thef factor is presented.