Localization of negatively charged excitons in GaAs/AlGaAs quantum wells

The localization of negatively charged excitons on isolated charged donors, located in a barrier at various fixed distances L from the heteroboundary, is investigated in isolated GaAs/AlGaAs quantum wells. The energy shift of the cyclotron replica in the emission spectra of a localized excitonic complex is studied as a function of L. It is shown that in undoped samples charged excitons localize on residual donors at distances L>350 Å on account of the formation of D ^? complexes at shorter distances. It is established that a cyclotron replica arises with the recombination of an excited state and not the ground state, as previously thought, of an excitonic complex.     

Magnetooptic measurements of the cyclotron mass and g-factor of light holes in GaAs

An emission line appearing in the hot-luminescence spectrum of GaAs at a frequency shifted from the laser line by the cyclotron energy of light holes is observed and investigated. Analysis of the magnetooscillations of the intensity of this line shows that the line is due to the recombination of a photoexcited electron and a light hole after the hole undergoes energy relaxation between Landau levels. The dependence of the cyclotron mass and g factor of light holes on the hole energy was measured directly and a very strong nonparabolicity of the valence band of GaAs, several times greater than the theoretical estimates, was observed. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 11, 766–771 (10 December 1996)     

Free and localized positively charged excitons in the emission spectrum of GaAs/AlGaAs quantum wells

The recombination emission spectra of an excitonic complex (A ⁰ X) localized on a neutral acceptor, which have previously been attributed to a positively charged exciton (X ⁺), are investigated. Satellites arising around the main luminescence line as a result of recoil processes during recombination of the complex which leave the surviving hole in an excited state are observed and investigated. It is shown in a computational model based on the Luttinger Hamiltonian that the energy splittings between the main line and the satellites correspond to an in-barrier impurity center located a definite distance from the well. It is shown that as the magnetic field increases, a transition is observed from the singlet ground state of the complex to a multiplet state. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 3, 223–228 (10 August 1998)     

Magnetoplasmon replica in the recombination radiation spectra of a quasi-two-dimensional electron gas in GaAs/AlGaAs quantum wells

The radiative recombination spectra of two-dimensional electrons with free photoexcited holes are investigated for a wide variety of GaAs/ AlGaAs quantum wells, with different thicknesses and electron densities. It is found that for certain, close to integral, filling factors an intense line corresponding to an Auger process — radiative recombination with the emission of an additional magnetoplasmon — appears in the luminescence spectrum. The new line is shifted to lower energies with respect to the zero Landau level, and the magnetic field dependence of the energy splitting between these lines agrees with the theoretical concepts of the dispersion of magnetoplasmon excitations. This makes it possible to estimate the magnetoplasmon energy at the roton minimum. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 8, 539–544 (25 October 1997)     

Excitons and excitonic complexes in GaAs/AlGaAs quantum wells with a low-density quasi-two-dimensional electron and hole channel

The recombination spectra of excitons and excitonic complexes in un-doped GaAs/AlGaAs single quantum wells are investigated. It is shown on the basis of a study of the magnetic-field dependence of the emission spectra and the degree of optical orientation in zero magnetic field and on the basis of electrooptic measurements that not only the density but also the sign of the charge carriers in a well depend strongly on the photoexcitation energy. It is shown on the basis of a comparative analysis of the spin splitting of the recombination lines of free and bound excitons that the recombination line which was attributed earlier to a positively charged exciton corresponds to the recombination of an exciton bound on a neutral acceptor. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 9, 707–713 (10 May 1998)     

Manifestation of exitonic effects in the magneto-oscillations of the intensity of the recombination radiation of 2D electrons

A study is made of the temperature dependence of the magnetooscillations of the recombination radiation of 2D electrons from the photoexcited size-quantization subband in an isolated GaAs/AlGaAs quantum well. It is shown that at high temperatures (T>10 K) the period of the oscillations is determined by the ratio of the intersubband energy splitting and the sum of the electron and hole cyclotron energies. It is found that as the temperature decreases (T<5 K), a new series of oscillations (with the same period but with a larger phase shift), which are associated with the appearance of excitonic states under the Landau levels, appears. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 10, 719–724 (25 November 1996)     

Radiation-stimulated diffusion in solids

Irradiation of solids produces a microscopic nonequilibrium state in which the vibrational energy distribution function of the atoms deviates from the thermodynamically equilibrium function. Expressions are obtained for the nonequilibrium distribution function and for the frequencies of activational transitions of atoms out of a potential well. It is shown that the radiation stimulation of diffusion processes involves a deviation of the temperature dependences of the frequencies of transitions of the atoms out of positions of equilibrium from the Arrhenius law. Under subthreshold irradiation conditions the rate of diffusion processes is higher for atoms whose vibrations thermalize over long times and depends linearly on the irradiation intensity. Under above-threshold irradiation conditions the characteristics of cascade regions in solids — their sizes and the vibrational excitation energy of the atoms — can be determined by comparing the computed and experimental temperature dependences of the diffusion coefficient. Zh. Tekh. Fiz. 68, 67–72 (August 1998)     

Mechanism of photoluminescence excitation of Mn<Superscript>2+</Superscript> ions in ZnS crystals

The mechanisms of photoluminescence excitation of Mn²⁺ ions in ZnS crystals have been investigated on the basis of complex analysis of the temperature dependences of the photoluminescence and photoluminescence-excitation spectra of ZnS:Mn crystals. The activation energy of a manganese luminescence center was estimated at E_a = 0.17 ± 0.05 eV. It is shown that E_a represents an energy band with a width ΔE_a = 0.1 eV, within which a manganese luminescence center can experience radiationless recombination. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 6, pp. 788–793, November–December, 2005.     

Thin-film electroluminescent devices excited by a linearly rising voltage

The average and instantaneous luminances of a thin-film electroluminescent device (TFELD) are determined as functions of the voltage rise time by solving kinetic equations for the concentration of excited emission centers in the electroluminescent layer of the device. It is shown theoretically and experimentally that the dependences of the average and peak luminances, the external and internal quantum yield, the energy yield, and the luminous efficacy as functions of the voltage rise time all have a maximum, and the position of that maximum depends on the frequency of the driving voltage. The calculated and experimental dependences make it possible to determine the main parameters of the electroluminescence process: the collisional excitation cross section for the emission centers, the concentration of emission centers, and the transition probability of the emission centers to an excited state, as well as the radiative and nonradiative recombination probabilities of these and other centers. Zh. Tekh. Fiz. 69, 58–63 (February 1999)     

Variational Bounds for the Generalized Random Energy Model

We compute the pressure of the random energy model (REM) and generalized random energy model (GREM) by establishing variational upper and lower bounds. For the upper bound, we generalize Guerra’s “broken replica symmetry bounds,” and identify the random probability cascade as the appropriate random overlap structure for the model. For the REM the lower bound is obtained, in the high temperature regime using Talagrand’s concentration of measure inequality, and in the low temperature regime using convexity and the high temperature formula. The lower bound for the GREM follows from the lower bound for the REM by induction. While the argument for the lower bound is fairly standard, our proof of the upper bound is new.     

Skyrmion mass and a new kind of cyclotron resonance for the 2D electron gas

The skyrmionic mass is calculated using a gradient expansion method. A special cyclotron resonance is predicted, with a frequency determined by the exchange energy. The possibility of an extra bound electron is discussed. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 6, 428–431 (25 September 1997) Published in English in the original Russian journal. Edited by Steve Torstveit. 462 462     

Excitonic effects in the recombination radiation spectra of completely filled Landau levels of two-dimensional electrons

The recombination radiation spectra of two-dimensional electrons in an asymmetrically doped GaAs/AlGaAs quantum well are investigated at different temperatures and laser-excitation energies. At low temperatures and in high magnetic fields the recombination lines of the electrons from completely filled Landau levels are split into narrow sublevels. It is shown that this fine structure of the Landau levels is due to the presence of excitonic effects in the initial and final states of the photoexcited system. It is demonstrated that the recombination process is accompanied by the excitation of intersubband and cyclotron magnetoplasma modes. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 1, 38–43 (10 January 1997)     

Excited hydrogenic atom in a strong low-frequency electromagnetic field

The multiphoton ionization of a bound electron state which is twofold degenerate with respect to its orbital angular momentum is considered in a quasiclassical approximation. It is shown that the ionization probability increases strongly in an intense electromagnetic field, in which nonresonant mixing of the levels forming the degenerate state is significant, in comparison to the case described by the Keldysh formula. It is also shown that such degeneracy leads to a sharp increase in the intensity of the radiation scattered by the bound electron, and the high-frequency cutoff of the emission spectrum is shifted to higher frequencies. Zh. Tekh. Fiz. 69, 15–20 (August 1999)     

Temperature dependent photoluminescence processes in ZnO thin films grown on sapphire by pulsed laser deposition

Temperature dependence of the photoluminescence (PL) transitions in the range of 10–300 K was studied for ZnO thin films grown on sapphire by pulsed laser deposition. The low temperature PL spectra were dominated by recombination of donor bound excitons (B_X) and their phonon replicas. With increasing temperature, free exciton (F_X) PL and the associated LO phonon replicas increased in intensity at the expense of their bound counterparts. The B_X peak with line width of ∼6 meV at 10 K exhibited thermal activation energy of ∼17 meV, consistent with the exciton-defect binding energy. The separation between the F_X and B_X peak positions was found to reduce with increasing temperature, which was attributed to the transformation of B_X into the shallower donor bound exciton complexes at consecutive lower energy states with increasing temperature, which are possible in ZnO. The energy separation between F_X peak and its corresponding 1-LO phonon replica showed stronger dependence on temperature than that of 2-LO phonon replica. However, their bound counterparts did not exhibit this behavior. The observed temperature dependence of the energy separation between the free exciton and it is LO phonon replicas are explained by considering the kinetic energy of free exciton. The observed PL transitions and their temperature dependence are consistent with observations made with bulk ZnO crystals implying high crystalline and optical quality of the grown films.     

Two-dimensional Abrikosov-vortex microclusters: Shell structure and melting

Melting of two-dimensional Abrikosov-vortex microclusters in a type-II superconductor island with thickness less than the coherence length has been studied. Equilibrium configurations corresponding to local and global minima of potential energy for clusters with N=1–50 particles are calculated. The temperature dependences of the structure and of mean-square radial and angular vortex displacements are investigated. It is shown that vortex microclusters melt in two stages: first the frozen-out phase transfers to a state corresponding to rotational reorientation of crystalline shells with respect to one another, followed by a transition to a state with no radial order at a substantially higher temperature. The reason for this is that the barrier to shell rotation is significantly lower than that to radial breakdown of shells. Fiz. Tverd. Tela (St. Petersburg) 39, 1005–1010 (June 1997)     

Pressure dependence of the near-band-edge photoluminescence from ZnO microrods at low temperature

The temperature and pressure dependences of band-edge photoluminescence from ZnO microrods have been investigated. The energy separation between the free exciton (FX) and its first order phonon replica (FX-1LO) decreases at a rate of k_BT with increasing temperature. The intensity ratio of the FX-1LO to the bound exciton (BX) emission is found to decrease slightly with increasing pressure. All of the exciton emission peaks show a blue shift with increasing pressure. The pressure coefficient of the FX transition, longitudinal optical (LO) phonon energy, and binding energy of BX are estimated to be 21.4, 0.5, and 0.9 meV/GPa, respectively.     

The effect of temperature on the pulsed conductivity of a KCl crystal excited by picosecond electron pulses

This paper discusses the temperature dependence of the pulsed conductivity of a KCl crystal in the interval 12–300K when it is excited by an electron beam (0.2 MeV, 50 ps, 300A/cm²) with a time resolution of 150 ps. It is shown that the electron lifetime is τ<100 ps in the entire interval under consideration, while the conductivity increases with temperature. The experimental results make it possible to obtain the temperature dependences of the effective electron-hole recombination cross section S∼T ^3.5 and the separation probability of genetic pairs. Fiz. Tverd. Tela (St. Petersburg) 41, 429–430 (March 1999)     

Effects of magnetic field on photon-induced quantum transport in a single dot-cavity system

In this study,we show how a static magnetic field can control photon-induced electron transport through a quantum dot system coupled to a photon cavity.The quantum dot system is connected to two electron reservoirs and exposed to an external perpendicular static magnetic field.The propagation of electrons through the system is thus influenced by the static magnetic and the dynamic photon fields.It is observed that the photon cavity forms photon replica states controlling electron transport in the system.If the photon field has more energy than the cyclotron energy,then the photon field is dominant in the electron transport.Consequently,the electron transport is enhanced due to activation of photon replica states.By contrast,the electron transport is suppressed in the system when the photon energy is smaller than the cyclotron energy.     

Condensation of electron-hole pairs in bulk GaAs at room temperature under conditions of femtosecond cooperative radiation

The results are given of an experimental investigation of the spectral characteristics of cooperative recombination of a high-density electron-hole plasma in GaAs. It is demonstrated that, under conditions of generation of high-power femtosecond pulses of superradiation, the properties of electrons and holes differ considerably from their properties under conditions of lasing or regular spontaneous recombination. The peak of the cooperative radiation line (?ω=1.405 to 1.407 eV) is shifted inward into a (nonrenormalized) forbidden band. It is located 20 meV lower on the energy scale than the lasing peak and more than 40 meV below the center of the line of spontaneous recombination at the same pumping level. This corresponds to electron-hole condensation to the bottom of the bands. The properties of cooperative recombination may be defined by the pairing of electrons and holes and by the formation of a short-lived coherent electron-hole BCS state. The estimated value of the order parameter Δ is approximately 2 meV.     

Limiting nonideal metastable supercooled plasma

Direct modeling of the dynamics of a system of many Coulomb particles is applied to analyze the formation stage of a metastable plasma state from an initial, highly nonideal state, and also to consider some properties of this metastable supercooled state. It is shown that relaxation of the average particle kinetic energy may be characterized by a universal dimensionless function and in particular, there is a limiting degree of plasma nonideality which may be achieved in the metastable state, in the absence of any external influence. The calculated pair correlation functions agree with the results of the Debye model, even outside its limits of validity. The time dependence of the total dipole moment of the particle system is investigated. It is shown that oscillations of the total dipole moment are observed. These collective oscillations take place at a frequency slightly below the Langmuir frequency and the oscillations of free and bound electrons are in antiphase. The hypothesis is put forward that recombination relaxation is frozen as a result of interaction between quasibound electrons and Langmuir oscillations of free electrons. Zh. Tekh. Fiz. 67, 42–52 (August 1997)