Hall micromagnetometry of domain-wall depinning in Permalloy nanowires

Experimental results of field-induced domain-wall depinning in Permalloy nanowires of submicron width and thicknesses between 10 and 30 nm are presented. Single domain walls pinned at notches in nanowires are detected by Hall micromagnetometry. The technique allows to study domain-wall propagation and depinning non-invasively in the temperature range between 2 and 50 K. The influence of sample thickness on domain-wall propagation properties is investigated. In nanowires with two notches of different pinning strength single domain walls are pinned in a toggle mode. The temperature dependence of domain-wall depinning fields in two-notch wires is analyzed.     

Domain wall resistance in epitaxial Fe wires

We studied the magnetoresistance behavior of epitaxial Fe wires grown on GaAs(1 1 0) with varying widths at room temperature. Single nanowires show a wire width (w) dependence of the coercive field, which increases with 1/w for decreasing wire widths. This enables the pinning of a single domain wall in the connection area of two wires with different widths. Magnetoresistance measurements of such wire structures clearly reveal resistance contributions arising from a domain wall. The presence of the domain wall is proven by photoemission electron-microscopy with synchrotron radiation. Moreover, micromagnetic simulations are performed to determine the spin orientations, especially within the domain wall. This permits us to calculate the anisotropic magnetoresistance caused by the domain wall. Taking this into account, we determine the intrinsic domain wall resistance, for which we found a positive value of 0.2%, in agreement with theoretical predictions.     

Rashba spin-orbit coupling effects on a current-induced domain wall motion

A current-induced domain wall motion in magnetic nanowires with a strong structural inversion asymmetry [I.M. Miron, T. Moore, H. Szambolics, L.D. Buda-Prejbeanu, S. Auffret, B. Rodmacq, S. Pizzini, J. Vogel, M. Bonfim, A. Schuhl, G. Gaudin, Nat. Mat. 10 (2011) 419] seems to have novel features such as the domain wall motion along the current direction or the delay of the onset of the Walker breakdown. In such a highly asymmetric system, the Rashba spin-orbit coupling (RSOC) may affect a domain wall motion. We studied theoretically the RSOC effects on a domain wall motion and found that the RSOC, indeed, can induce the domain wall motion along the current direction in certain situations. It also delays the Walker breakdown and for a strong RSOC, the Walker breakdown does not occur at all. The RSOC effects are sensitive to the magnetic anisotropy of nanowires and also to the ratio between the Gilbert damping parameter α and the non-adiabaticity parameter β.     

Current driven domain wall velocities exceeding the spin angular momentum transfer rate in permalloy nanowires

The velocity of domain walls driven by current in zero magnetic field is measured in permalloy nanowires using real-time resistance measurements. The domain wall velocity increases with increasing current density, reaching a maximum velocity of approximately 110 m/s when the current density in the nanowire reaches approximately 1.5 x 10(8) A/cm(2). Such high current driven domain wall velocities exceed the estimated rate at which spin angular momentum is transferred to the domain wall from the flow of spin polarized conduction electrons, suggesting that other driving mechanisms, such as linear momentum transfer, need to be taken into account.     

Influence of current on field-driven domain wall motion in permalloy nanowires from time resolved measurements of anisotropic magnetoresistance

The motion of magnetic domain walls in permalloy nanowires is investigated by real-time resistance measurements. The domain wall velocity is measured as a function of the magnetic field in the presence of a current flowing through the nanowire. We show that the current can significantly increase or decrease the domain wall velocity, depending on its direction. These results are understood within a one-dimensional model of the domain wall dynamics which includes the spin transfer torque.     

Micromagnetic study of domain wall depinning driven by nanosecond current pulse in notched Permalloy nanowires

The complete understanding of domain wall (DW) dynamics is important in the design of future spintronic devices. The characteristics of faster time-scale and lower current amplitude to move DW along nanowire are crucial in fabrication upgrade. In this study, we have investigated depinning behavior of magnetic domain wall triggered by nanosecond current pulse in notched Permalloy nanowires by means of micromagnetic simulation. We introduced double-triangular notch as the constrictions in the nanowire. The non-adiabaticity of the spin-transfer-torque is considered in simulation by varying the non-adiabatic constant (β) value. We observed that the depinning current density (J_d) was not significantly affected by β for notch size (s) < 50 nm. Interestingly, we found that the depinning time (t_d) for β ≥ 0.04 was slightly constant for all the cases with s > 70 nm, where the DW structure was kept to be a transverse structure during the depinning process. The broadly applicable depinning behavior is considered to contribute to the development of high-speed memory storage devices based on magnetic domain wall.     

Unique depinning fields at symmetric double notches in a ferromagnetic permalloy nanowire

Ferromagnetic domain-wall pinning and depinning mechanisms were investigated at permalloy nanowire notches using a micromagnetic calculation. A unique depinning field originated from the symmetric double notches irrespective of the wall polarity or the propagation direction, whereas several distinct pinning mechanisms appeared from single or asymmetric notches. The depinning field was principally determined by the exiting notch slope due to the dynamic narrowing of the domain wall thickness.     

Domain wall pinning in narrow ferromagnetic ring structures probed by magnetoresistance measurements

We present a magnetoresistance study of magnetization reversal and domain wall pinning effects in a mesoscopic narrow ferromagnetic Permalloy ring structure containing notches. The size and strength of the attractive pinning potential created by a notch is measured and the resistance minimum at remanence is found to occur when a single transverse domain wall is pinned at the notch, in agreement with the results of numerical simulations of the anisotropic magnetoresistance. When a field is applied in the direction corresponding to a potential well edge, a novel magnetic state with a very wide domain wall is stabilized, giving rise to a characteristic signature in the magnetoresistance at such angles.     

Detection and discrimination of spectral peaks and notches at 1 and 8 kHz

The ability of subjects to detect and discriminate spectral peaks and notches in noise stimuli was determined for center frequencies fc of 1 and 8 kHz. The signals were delivered using an insert earphone designed to produce a flat frequency response at the eardrum for frequencies up to 14 kHz. In experiment I, subjects were required to distinguish a broadband reference noise with a flat spectrum from a noise with either a peak or a notch at fc. The threshold peak height or notch depth was determined as a function of bandwidth of the peak or notch (0.125, 0.25, or 0.5 times fc). Thresholds increased with decreasing bandwidth, particularly for the notches. In experiment II, subjects were required to detect an increase in the height of a spectral peak or a decrease in the depth of a notch as a function of bandwidth. Performance was worse for notches than for peaks, particularly at narrow bandwidths. For both experiments I and II, randomizing (roving) the overall level of the stimuli had little effect at 1 kHz, but tended to impair performance at 8 kHz, particularly for notches. Experiments III-VI measured thresholds for detecting changes in center frequency of sinusoids, bands of noise, and spectral peaks or notches in a broadband background. Thresholds were lowest for the sinusoids and highest for the peaks and notches. The width of the bands, peaks, or notches had only a small effect on thresholds. For the notches at 8 kHz, thresholds for detecting glides in center frequency were lower than thresholds for detecting a difference in center frequency between two steady sounds. Randomizing the overall level of the stimuli made frequency discrimination of the sinusoids worse, but had little or no effect for the noise stimuli. In all six experiments, performance was generally worse at 8 kHz than at 1 kHz. The results are discussed in terms of their implications for the detectability of spectral cues introduced by the pinnae.     

Stress dependence of the domain wall dynamics in the adiabatic regime

In this work, we determine the domain wall velocity in the low field region and study the domain dynamics in as-cast and annealed bi-stable amorphous glass-covered Fe_77.5Si_7.5B₁₅ microwires. In particular, from the relation between the domain wall velocity and magnetic field in the adiabatic regime, the power-law critical exponent β, the critical field H₀ and the domain wall damping η were obtained. It has been verified that the main source of domain wall damping is the eddy current and spin relaxation, both with a strong relation with the magnetoelastic energy. This energy term is changed by the axial applied stress, which, by its time, modifies the damping mechanisms. It was also verified that the domain wall damping terms present different behavior at low (mainly eddy currents) and high applied stress (spin relaxation).     

Enhanced depolarization temperature in 0.90NBT–0.05KBT–0.05BT ceramics induced by BT nanowires

The depolarization temperature (T_d) of piezoelectric materials is an important figure of merit for their application at elevated temperatures. This study focuses on the effect of BaTiO₃ (BT) nanowires on T_d and piezoelectric properties of morphotropic-phase-boundary 0.90NBT–0.05KBT–0.05BT ceramics. The results reveal that BaTiO₃ nanowires can pin the domain wall, leading to the increase of coercive field (E_c) from 21.06 kV/cm to 34.99 kV/cm. The T_d value of 0.90NBT–0.05KBT–0.05BT ceramics can be enhanced approximately 20 °C when using BT nanowires instead of BT solution as the raw material. Meanwhile, at the same polarization conditions, the piezoelectric constant of the ceramic added BT nanowires (172 pC/N) is decreased but still remains a larger value compared with those of other lead-free ceramics. The results imply that the addition of BT nanowires into NBT–KBT is a very effective route to improve T_d.     

Fast current-induced motion of a transverse domain wall induced by interfacial Dzyaloshinskii–Moriya interaction

Based on a theoretical study, we show that the interfacial Dzyaloshinskii–Moriya interaction results in very efficient current-induced manipulation of a transverse domain wall in magnetic nanowires. The efficient domain wall motion is caused by combined effects of the domain wall distortion induced by the interfacial Dzyaloshinskii–Moriya interaction and the damping-like spin–orbit spin transfer torque. We find that with reasonable parameters, the domain wall velocity reaches a few hundreds m/s at the current density of 10⁷ A/cm², which has never been achieved before. Our result will be beneficial for low-power operation of domain wall devices.     

Magnetic soft x-ray microscopy of the domain wall depinning process in permalloy magnetic nanowires

Full-field magnetic transmission x-ray microscopy at high spatial resolution down to 20 nm is used to directly observe field-driven domain wall motion in notch-patterned permalloy nanowires. The depinning process of a domain wall around a notch exhibits a stochastic nature in most nanowires. The stochasticity of the domain wall depinning sensitively depends on the geometry of the nanowire such as the wire thickness, the wire width, and the notch depth. We propose an optimized design of the nanowire for deterministic domain wall depinning field at a notch.     

Structure evolution and electrical transport property of Si nanowire

Various optimized Si and its alloy nanowires, from a monoatomic chain to helical and multishell coaxial cylinder, have been obtained. Results reveal that the structure of the Si nanowires transforms as the radii of the carbon nanotubes increase, despite of the chirality of the CNTs. We also calculate the physical properties, such as density of states, transmission functions, current–voltage (I–V) characteristics, and conductance spectra (G–V) of optimized nanowires and alloy nanowires sandwiched between two gold contacts. Interestingly, compared with the pure Si nanowires, the conductance of the alloy nanowires is even lower.     

Resistance of a single domain wall in (Co/Pt)7 multilayer nanowires

Single (Co/Pt)_{7} multilayer nanowires prepared by electron beam lithography with perpendicular magnetic anisotropy are locally modified by means of Ga-ion implantation generating 180 degrees domain walls which are pinned at the edges of underlying thin Pt wires. Since we can exclude contributions from the anisotropic and the Lorentz magnetoresistance this allows us to determine the resistance of a single domain wall at room temperature. We find a positive relative resistance increase of DeltaR/R=1.8% inside the domain wall which agrees well with the model of Levy and Zhang [Phys. Rev. Lett. 79, 5110 (1997)10.1103/PhysRevLett.79.5110].     

Influence of exchange coupling on current-driven domain wall motion in a nanowire

In this study, the effect of exchange stiffness constant on current-driven domain wall motion in nanowires with in-plane magnetic anisotropy (IMA) and perpendicular magnetic anisotropy (PMA) has been investigated using micromagnetic simulation. The critical current density in a nanowire with IMA decreases as the exchange stiffness constant decreases because the domain wall width at the upper edge of the nanowire narrows according to the decrease of the exchange stiffness constant. On the other hand, the critical current density in a nanowire with PMA slightly decreases contrary to that of IMA although the domain wall width reasonably decreases as the exchange stiffness constant decreases. The slight reduction rate of the critical current density is due to the increase of the effective hard-axis anisotropy of PMA nanowire.     

Magnetic moment softening and domain wall resistance in Ni nanowires

We perform ab initio calculations of the electronic structure and conductance of atomic-size Ni nanowires with domain walls only a few atomic lattice constants wide. We show that the hybridization between noncollinear spin states leads to a reduction of the magnetic moments in the domain wall resulting in the enhancement of the domain wall resistance. Experimental studies of the magnetic moment softening may be feasible with modern techniques such as scanning tunneling spectroscopy.     

Domain wall dynamics driven by spin transfer torque and the spin-orbit field

We have studied current-driven dynamics of domain walls when an in-plane magnetic field is present in perpendicularly magnetized nanowires using an analytical model and micromagnetic simulations. We model an experimentally studied system, ultrathin magnetic nanowires with perpendicular anisotropy, where an effective in-plane magnetic field is developed when current is passed along the nanowire due to the Rashba-like spin-orbit coupling. Using a one-dimensional model of a domain wall together with micromagnetic simulations, we show that the existence of such in-plane magnetic fields can either lower or raise the threshold current needed to cause domain wall motion. In the presence of the in-plane field, the threshold current differs for positive and negative currents for a given wall chirality, and the wall motion becomes sensitive to out-of-plane magnetic fields. We show that large non-adiabatic spin torque can counteract the effect of the in-plane field.     

Investigation of electrical and optoelectronic properties of zinc oxide nanowires

Zinc oxide (ZnO) nanowires have been synthesized by using tubular furnace chemical vapor deposition technique. The morphology, chemical composition and crystal structure of as-synthesized ZnO nanowires were examined by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS) and X-ray diffraction (XRD) techniques. Four-terminal current-voltage (I-V) measurements were employed to study the electrical conductance of ZnO nanowires under various testing gas environments for gas sensing purpose. The I-V curves at temperature ranging from 150 to 300 K were recorded in the testing chamber under vacuum. The Arrhenius plot shows perfect linear relationship between the logarithm of the current I and inverse temperature 1/T. The donor level of the semiconducting nanowires is about 326 meV. The I-V behaviors were found to be reversible and repeatable with testing gases. The electrical conductivity was enhanced by a factor of four with ambient CO gas compared to that in vacuum and other testing gases. The optoelectronic properties of the ZnO nanowires were obtained by two-terminal I-V measurement method while the nanowires were illuminated by a ruby laser. The electrical conductivity was increased by 60% when the laser was present in comparison to that when the laser was off. Those significant changes suggest that nano-devices constructed by the ZnO nanowires could be used in gas sensing and optical switching applications.     

Controlled domain wall motion by current into patterned-U Ni80Fe20 wires

The current-induced domain wall motion was observed experimentally in the case of the domain wall trapped at the semicircular arc within the U shape Ni₈₀Fe₂₀ wire. The measurement of the current-induced domain wall motion was achieved by adding a biased field before switching field and a critical current density was measured. We found two magnetic domain structures in the U pattern. At zero fields, the vortex domain wall nucleated at the semicircular arc of the U pattern. Continuous magnetic state without wall was investigated in near-switching field.