YbNi2: A heavy fermion ferromagnet

Measurements of the magnetization and specific heat of YbNi₂ binary alloy are reported. The DC magnetic susceptibility displays a ferromagnetic behavior with a Curie temperature T_C=10.5 K, one of the highest found in Yb compounds. Moreover, the temperature dependence of the specific heat exhibits a lambda anomaly with a peak of 5.12 J/mol K at 9.4 K. The analysis also shows an additional magnetic contribution around 32 K stemming from the crystalline electric field of a quartet at ${\Delta }_1=72\mathrm{K}$ and a doublet at ${\Delta }_2=126\mathrm{K}$, according to the splitting of the Yb³⁺ ion in cubic symmetry. From the magnetic contribution to the specific heat, a relatively high Kondo temperature $T_K=27\mathrm{K}$ is estimated. Below the magnetic transition, the specific heat shows a huge value of the electronic coefficient ${\gamma }_{\mathit{LT}}=573\mathrm{mJ}/\mathrm{mol}\mathrm{K}$, which is a signature of a heavy fermion behavior. Therefore, this alloy is a fine example of enhanced ferromagnetism and heavy fermion behavior among Yb compounds.     

Orientation relationship between α-Fe precipitate and α-Al2O3 matrix in iron-implanted sapphire

Fe ions were implanted into α-Al₂O₃ single crystals (sapphire) at room temperature and annealed in a reducing atmosphere. The orientation relationships (ORs) between α-Fe particles and sapphire matrix were investigated using transmission electron microscopy (TEM). All the α-Fe particles have the orientation relationship (OR) of (1 1 1)_α-Fe || (0 0 0 1)_sapphire and ${[1\overline{1}0]}_{\alpha \text{-Fe}}\left|\right|{[11\overline{2}0]}_{\text{sapphire}}$ with sapphire. This OR is predicted precisely by the coincidence of reciprocal lattice points (CRLP) method. The other OR of (1 1 0)_α-Fe || (0 0 0 1)_sapphire and ${[111]}_{\alpha \text{-Fe}}\left|\right|{[5\overline{1}\overline{4}0]}_{\text{sapphire}}$ reported before is confirmed by the same method to be one of the secondary preferred orientation relationships in the α-Fe/sapphire system.     

Triangle for the entropic index q of non-extensive statistical mechanics observed by Voyager 1 in the distant heliosphere

Tsallis [Physica A 340 (2004) 1) identified a set of numbers, the “q-triplet” ≡ {q_stat, q_sen, q_rel}, for a system described by non-extensive statistical mechanics. The deviation of the q's from unity is a measure of the departure from thermodynamic equilibrium. We present observations of the q-triplets derived from two sets of daily averages of the magnetic field strength B observed by Voyager 1 in the solar wind near 40 A.U. during 1989 and near 85 A.U. during 2002, respectively. The results for 1989 do not differ significantly from those for 2002. We find $q_{\mathrm{stat}}=1.75\pm 0.06$, $q_{\mathrm{sen}}=-0.6\pm 0.2$, and $q_{\mathrm{rel}}=3.8\pm 0.3$.     

Principal and secondary luminescence lifetime components in annealed natural quartz

Time-resolved luminescence spectra from quartz can be separated into components with distinct principal and secondary lifetimes depending on certain combinations of annealing and measurement temperature. The influence of annealing on properties of the lifetimes related to irradiation dose and temperature of measurement has been investigated in sedimentary quartz annealed at various temperatures up to $900{}^{\circ }\mathrm{C}$. Time-resolved luminescence for use in the analysis was pulse stimulated from samples at 470 nm between 20 and $200{}^{\circ }\mathrm{C}$. Luminescence lifetimes decrease with measurement temperature due to increasing thermal effect on the associated luminescence with an activation energy of thermal quenching equal to $0.68\pm 0.01\mathrm{eV}$ for the secondary lifetime but only qualitatively so for the principal lifetime component. Concerning the influence of annealing temperature, luminescence lifetimes measured at $20{}^{\circ }\mathrm{C}$ are constant at about $33\mathrm{\mu }\mathrm{s}$ for annealing temperatures up to $600{}^{\circ }\mathrm{C}$ but decrease to about $29\mathrm{\mu }\mathrm{s}$ when the annealing temperature is increased to $900{}^{\circ }\mathrm{C}$. In addition, it was found that lifetime components in samples annealed at $800{}^{\circ }\mathrm{C}$ are independent of radiation dose in the range 85–1340 Gy investigated. The dependence of lifetimes on both the annealing temperature and magnitude of radiation dose is described as being due to the increasing importance of a particular recombination centre in the luminescence emission process as a result of dynamic hole transfer between non-radiative and radiative luminescence centres.     

Fast intrinsic emission in Cs2CdI4 single crystal

The spectral-luminescent studies of the ${\mathrm{Cs}}_2{\mathrm{CdI}}_4$ single crystals are reported. The fast luminescence in the 3.6–2.0 eV energy range with decay time $\tau =4.6\mathrm{ns}$ was revealed in the crystal under high-energy excitation $(E_{\mathrm{exc}}>8\mathrm{eV})$ at 9 K. This luminescence is supposed to be caused by the hole transitions between subbands of the split valence band. The energy-band picture for ${\mathrm{Cs}}_2{\mathrm{CdI}}_4$ crystals was calculated as a proof of the luminescence model.     

The recombination channels of luminescence excitation in YAG:Yb single crystalline films

Absorption and emission spectra, luminescence decay kinetics and thermostimulated luminescence of X-ray irradiated YAG:Yb single crystalline films were studied. Two emission bands peaked at 420 and 488 nm have been detected in the investigated films. The strong thermal quenching of luminescence band at 488 nm was observed above 160 K. The influence of growth conditions and annealing in air on the lifetime of ${\mathrm{Yb}}^{3+}$ ion excited state in the IR spectral region have been revealed. The recombination mechanisms of the $f–f$ transition at ${\mathrm{Yb}}^{3+}$ ion excitation, as well as the mechanism of lifetime shortening for the excited ${\mathrm{Yb}}^{3+}$ luminescence have been discussed.     

Disorder dependence electron phonon scattering rate of V82Pd18 − xFex alloys at low temperature

We have systematically investigated the disorder dependence electron phonon scattering rate in three dimensional disordered V₈₂Pd_18 ? xFe_x alloys. A minimum in temperature dependence resistivity curve has been observed at low temperature $T=T_{\mathrm{m}}$. In the temperature range $5\text{ K}\le T\le T_{\mathrm{m}}$ the resistivity correction follows ${{\rho }_{\mathrm{o}}}^{5/2}{T}^{1/2}$ law. The dephasing scattering time has been calculated from analysis of magnetoresistivity by weak localization theory. The electron dephasing time is dominated by electron–phonon scattering and follows anomalous temperature (T) and disorder $({\rho }_0)$ dependence behaviour like ${\tau }_{\mathrm{e}\text{-}\mathrm{ph}}^{?1}\propto T^2/{\rho }_0$, where ${\rho }_0$ is the impurity resistivity. The magnitude of the saturated dephasing scattering time $({\tau }_0)$ at zero temperature decreases with increasing disorder of the samples. Such anomalous behaviour of dephasing scattering rate is still unresolved.