首页 | 官方网站   微博 | 高级检索  
     

Gd3+、Co3+共掺杂铁酸铋薄膜多铁性增强及带隙调谐
引用本文:马国斌,杨松,徐蕾,郭凯鑫,王旭.Gd3+、Co3+共掺杂铁酸铋薄膜多铁性增强及带隙调谐[J].人工晶体学报,2021,50(5):851-857.
作者姓名:马国斌  杨松  徐蕾  郭凯鑫  王旭
作者单位:贵州大学大数据与信息工程学院,贵州省电子功能复合材料特色重点实验室,贵阳 550025
基金项目:国家自然科学基金(61404033);贵州大学国家级重点培育项目(201813);贵州省公共大数据重点实验室开放课题(2017BDKFJJ)
摘    要:多铁功能材料在现代生产生活中有举足轻重的作用。本文采用溶胶-凝胶法以硝酸铁、硝酸铋、硝酸钆、硝酸钴为原料,乙二醇甲醚为溶剂,柠檬酸作螯合剂制成前驱体溶液,通过旋涂法在Pt/Ti/SiO2/Si及ITO衬底上合成Bi0.85Gd0.15Fe1-xCoxO3 (x=0, 0.04, 0.08, 0.12)薄膜,研究了Gd3+、Co3+共掺杂对薄膜铁电性能、磁学性能及光学带隙的影响。XRD结果表明所有薄膜均呈(111)方向的菱形结构,SEM结果表明共掺杂可以细化晶粒。根据铁电性和漏电流测试分析结果可知在Co3+掺杂量为8%时最大剩余极化值达到2Pr=15.71 μC/cm2,所有样品的漏电流传导机制均为欧姆传导机制。根据磁学性能测试分析结果可知,共掺杂可以有效增强薄膜的饱和磁化强度,且在Co3+掺杂量为8%时最大饱和磁化强度达到37.78 emu/cm3。根据吸收光谱及Tauc公式拟合结果可知共掺杂可以有效减小薄膜的光学带隙且随着掺杂量的增加光学带隙逐渐减小,在Co3+掺杂量为12%时光学带隙减小到1.96 eV。

关 键 词:溶胶凝胶  铁酸铋  铁电性能  铁磁性能  漏电流  光学带隙  
收稿时间:2021-02-23

Multiferroic Enhancement and Bandgap Tuning of Gd3+ and Co3+ Co-Doped Bismuth Ferrite Thin Films
MA Guobin,YANG Song,XU Lei,GUO Kaixin,WANG Xu.Multiferroic Enhancement and Bandgap Tuning of Gd3+ and Co3+ Co-Doped Bismuth Ferrite Thin Films[J].Journal of Synthetic Crystals,2021,50(5):851-857.
Authors:MA Guobin  YANG Song  XU Lei  GUO Kaixin  WANG Xu
Affiliation:Guizhou Key Laboratory of Electronic Multifunctional Composite Materials, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China
Abstract:Multiferroic functional materials are of significant importance in modern daily life and industry. Here we report a multiferroic functional material Bi0.85Gd0.15Fe1-x CoxO3(x=0, 0.04, 0.08, 0.12) thin film which was synthesized on Pt/Ti/SiO2/Si and ITO substrates by sol-gel process, involving ferroic nitrate, bismuth nitrate, gadolinium nitrate, cobalt nitrate as raw materials, ethylene glycol methyl ether as solvent, and citric acid as chelating agent forming precursor solution. A comprehensive investigation of structure, ferroelectric property, magnetic property and optical band gap of Gd3+ and Co3+co-doping BiFeO3 was conducted. XRD results reveal that all films showing a rhombohedral structure in the (111) direction, and SEM results exhibit that co-doping could refine the grains. According to the results of ferroelectricity and leakage current test analysis, the maximum residual polarization value reaches 2Pr =15.71 μC/cm2 when the Co3+ doping amount is 8%, at which amount also achieves the maximum saturation magnetization 37.78 emu/cm3. The leakage current conduction mechanism of all samples is ohmic conduction mechanism. Last but not least, a modulated bandgap effect according to the absorption spectrum and the fitting results of the Tauc formula were observed. In the co-doping film, the optical bandgap gradually decreases with the increase of the doping amount. In particular, when the Co3+doping amount is 12%, the optical bandgap decreases to 1.96 eV.
Keywords:sol-gel  bismuth ferrite  ferroelectric property  ferromagnetic property  leakage current  optical bandgap  
本文献已被 CNKI 等数据库收录!
点击此处可从《人工晶体学报》浏览原始摘要信息
点击此处可从《人工晶体学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号