| 分子束外延生长过程中GaAs(001)表面铝液滴的扩散成核过程 |
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| 引用本文： | 蒋冲,王一,丁召,黄延彬,罗子江,李志宏,李耳士,郭祥.分子束外延生长过程中GaAs(001)表面铝液滴的扩散成核过程[J].人工晶体学报,2021,50(2):283-289. |
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| 作者姓名： | 蒋冲 王一 丁召 黄延彬 罗子江 李志宏 李耳士 郭祥 |
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| 作者单位： | 1.贵州大学大数据与信息工程学院,贵阳 550025;2.贵州省微纳电子与软件技术重点实验室,贵阳 550025;3.半导体功率器件可靠性教育部工程研究中心,贵阳 550025;4.贵州财经大学信息学院,贵阳 550025 |
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| 基金项目： | 国家自然科学基金(61564002,11664005);贵州省科技计划(黔科合基础1055);半导体功率器件可靠性教育部研究中心开放基金(ERCME-KFJJ2019-(07)) |
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| 摘 要： | 量子点的性质主要由其密度及尺寸参数控制,而原子在衬底上的成核运动又决定了量子点的密度、直径、高度等参数,因此研究原子的扩散成核过程对自组装制备量子点具有重要意义。本文通过分子束外延生长技术研究了GaAs(001)表面金属铝液滴的成核过程,发现衬底温度和金属铝沉积速率的变化直接影响了液滴的尺寸、密度以及形状等特征。根据经典成核理论分析GaAs(001)表面金属铝液滴空间分布与几何结构的演化规律,推导得出表面金属铝液滴密度与衬底温度、金属铝沉积速率的关系方程。在此基础上,进一步计算得出液滴形成过程中未成核态、临界成核态、成核态三种亚稳态所包含的最小原子数分别为1个、2个、5个。
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| 关 键 词： | 成核生长 团簇的扩散动力学 Ⅲ-Ⅴ族半导体 分子束外延 衬底温度 沉积速率 铝液滴 |
| 收稿时间： | 2020-12-03 |
Diffusion and Nucleation of Aluminum Droplet on GaAs(001) Surface during Molecular Beam Epitaxy Growth |
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| JIANG Chong,WANG Yi,DING Zhao,HUANG Yanbin,LUO Zijiang,LI Zhihong,LI Ershi,GUO Xiang.Diffusion and Nucleation of Aluminum Droplet on GaAs(001) Surface during Molecular Beam Epitaxy Growth[J].Journal of Synthetic Crystals,2021,50(2):283-289. |
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| Authors: | JIANG Chong WANG Yi DING Zhao HUANG Yanbin LUO Zijiang LI Zhihong LI Ershi GUO Xiang |
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| Affiliation: | 1.College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China; 2.Key Laboratory of Micro-Nano-Electronics of Guizhou Province, Guiyang 550025, China; 3.Power Semiconductor Device Reliability Center of the Ministry of Education, Guiyang 550025, China; 4.School of Information, Guizhou University of Finance and Economics, Guiyang 550025, China |
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| Abstract: | The properties of quantum dots are mainly controlled by their density and size parameters, and the nucleation motion of atoms on the substrate determines the density, diameter, height and other parameters of quantum dots. Therefore, studying the diffusion and nucleation process of atoms is important for self-assembly preparation of quantum dots. A study was conducted on the nucleation process of aluminum droplets on GaAs(001) surface during molecular beam epitaxial growth, which leads to the finding that the influencing factors in the nucleation process include the substrate temperature and the deposition rate when other conditions are unchanged. According to the classical nucleation theory, the spatial distribution and geometric structure evolution of the aluminum droplet on the surface of GaAs(001) were analyzed, and the relation equation of the metal aluminum droplet density on the surface with the substrate temperature and the metal aluminum deposition rate was deduced. In the meantime, the minimum atomic number for the three states of the extreme incomplete state, the initially incomplete state and the complete state are calculated to be 1, 2 and 5, respectively. |
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| Keywords: | nucleation and growth diffusion and dynamics of cluster III-V semiconductor molecular beam epitaxy substrate temperature deposition rate aluminum droplet |
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