| Bi4Ge3O12:Er3+晶体中的高阶混合效应对EPR g因子的影响 |
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| 引用本文： | 郝丹辉,柴瑞鹏,梁良.Bi4Ge3O12:Er3+晶体中的高阶混合效应对EPR g因子的影响[J].人工晶体学报,2021,50(3):447-453. |
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| 作者姓名： | 郝丹辉 柴瑞鹏 梁良 |
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| 作者单位： | 1.西安建筑科技大学华清学院物理教研室,西安 710043;2.西安建筑科技大学理学院,西安 710055 |
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| 基金项目： | 陕西省教育厅自然科学专项基金(18JK025); 陕西省自然科学基础研究基金面上项目(2020JM-476) |
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| 摘 要： | 通过对角化364×364完全能量矩阵的理论方法,对掺杂在Bi4Ge3O12晶体中的Er3+的Stark能级和EPR参数进行了研究,同时,定量分析了高阶晶体场混合效应和J-J混合效应对EPR g因子的影响。研究结果表明:对Er3+来说,最主要的J-J混合效应来源于多重态谱项2K15/2,其对EPR g因子的贡献约占2.5%,而最主要的高阶晶体场混合效应来源于第一激发多重态4I13/2和基态多重态4I15/2之间的晶体场混合,其对各向异性g因子中g⊥的贡献大致是g//的两倍(即g⊥约占 0.21%,g//约占0.092%),其他更高阶的晶体场混合和J-J混合效应可以忽略不计。因此,对于Er3+掺杂的络合物系统来说,只考虑基态多重态4I15/2对EPR g因子的贡献应该是一个很好的近似。
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| 关 键 词： | Er3+ Bi4Ge3O12 晶体场效应 J-J混合效应 EPRg因子 |
| 收稿时间： | 2020-12-16 |
High-Order Mixing Effects on EPR g-factors for Er3+ Doped Bi4Ge3O12 Crystals |
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| HAO Danhui,CHAI Ruipeng,LIANG Liang.High-Order Mixing Effects on EPR g-factors for Er3+ Doped Bi4Ge3O12 Crystals[J].Journal of Synthetic Crystals,2021,50(3):447-453. |
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| Authors: | HAO Danhui CHAI Ruipeng LIANG Liang |
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| Affiliation: | 1. Department of Physics, Xi'an University of Architecture and Technology Hua Qing College, Xi'an 710043, China;2. College of Science, Xi'an University of Architecture and Technology, Xi'an 710055, China |
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| Abstract: | Stark levels and EPR parameters of Er3+ doped in Bi4Ge3O12 crystal were studied by diagonalizing 364×364 complete energy matrices. Simultaneously, the crystal-field and J-J mixing effects on the EPR g-factors from the higher lying manifolds were evaluated, quantitatively. The results indicate that the dominant J-J mixing contribution from manifold 2K15/2 accounts for about 2.5% for the Er3+. However, the most significant high-order mixing effect is from the crystal-field admixture between the first excited manifold 4I13/2 and ground manifold 4I15/2, where the contribution to g⊥ is almost twice as much as that to g// (0.21% for g⊥, 0.092% for g//).The other crystal-field and J-J mixing effects from the higher lying manifolds can be neglected. Therefore, only considering the contribution of ground manifold 4I15/2 to EPR g-factor is a good approximation for the complex system doped with Er3+ ions. |
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| Keywords: | Er3+ Bi4Ce3O12 crystal-field effect J-J mixing effect EPR g-factor |
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