| 掺锗提高VO2薄膜的相变温度机理研究 |
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| 引用本文： | 崔景贺,蒋权伟,高忙忙,梁森.掺锗提高VO2薄膜的相变温度机理研究[J].人工晶体学报,2022,51(4):666-672. |
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| 作者姓名： | 崔景贺 蒋权伟 高忙忙 梁森 |
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| 作者单位： | 宁夏大学材料与新能源学院,宁夏光伏材料重点实验室,银川 750021 |
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| 基金项目： | 宁夏自然科学基金(2020AAC03005)； |
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| 摘 要： | 二氧化钒(VO2)作为一种长久以来备受关注的新型可逆相变材料,发展潜力巨大,其相变温度(TMIT)的调控一直是研究热点。本文主要利用锗离子作为掺杂离子探索其对VO2薄膜TMIT的影响,并尝试解释其内部作用机理。在约1 cm2大小抛光的氧化铝薄片上沉积了一系列含不同比例锗离子VO2薄膜。研究发现锗离子作为掺杂离子确实有利于TMIT的提高(本课题TMIT最大可达84.7 ℃)。TMIT提高的主要原因是锗离子的引入能够强化单斜态V-V二聚体的稳定性,进而增强单斜态的稳定性,使得低温单斜态向四方金红石态转变更加困难。
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| 关 键 词： | 二氧化钒 薄膜 相变温度 二氧化锗 晶格畸变 电学性能 V-V二聚体 |
| 收稿时间： | 2022-01-05 |
Mechanism of Phase Change Temperature of VO2 Thin Films by Doping Germanium |
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| CUI Jinghe,JIANG Quanwei,GAO Mangmang,LIANG Sen.Mechanism of Phase Change Temperature of VO2 Thin Films by Doping Germanium[J].Journal of Synthetic Crystals,2022,51(4):666-672. |
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| Authors: | CUI Jinghe JIANG Quanwei GAO Mangmang LIANG Sen |
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| Affiliation: | Key Laboratory of Ningxia for photovoltaic Materials, School of Materials and New Energy, Ningxia University, Yinchuan 750021, China |
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| Abstract: | As a new type of reversible phase change material, vanadium dioxide (VO2) has shown great potential in development with the regulation of its phase change temperature (TMIT) and were extensively studied. The experiment in this study focuses on exploring the effect of germanium ions on TMIT of VO2 thin films and trying to explain the internal mechanism. A series of VO2 films containing different ratios of germanium ions were deposited on polished alumina sheets. The characterization results show that germanium ions contribute to increasing TMIT (maximum TMIT is 84.7 ℃). The main reason for this increase is that germanium ion enhances the stability of monoclinic V-V dimer by increasing the stability of monoclinic V-V dimer, which makes the transition from low-temperature monoclinic state to tetragonal rutile state more difficult. |
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| Keywords: | vanadium dioxide thin film phase change temperature germanium dioxide lattice distortion electrical property V-V dimer |
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