| 射频磁控溅射氧气流量对制备的Ga2O3∶Cr薄膜光致发光性能的影响 |
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| 引用本文： | 赵鑫,刘粉红,张晓东,刘昌龙.射频磁控溅射氧气流量对制备的Ga2O3∶Cr薄膜光致发光性能的影响[J].人工晶体学报,2022,51(8):1353-1360. |
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| 作者姓名： | 赵鑫 刘粉红 张晓东 刘昌龙 |
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| 作者单位： | 1.天津大学理学院,天津 300354;2.天津市低维功能材料物理与制备技术重点实验室,天津 300350 |
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| 基金项目： | 国家自然科学基金(11675120,11535008) |
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| 摘 要： | 在不同氧气流量下,采用双靶射频磁控共溅射的方法在蓝宝石(α-Al2O3)基底上制备得到系列掺Cr的Ga2O3(Ga2O3∶Cr)薄膜,详细研究了薄膜在900 ℃退火前后的结构和光学性能。结果表明,未退火的Ga2O3∶Cr薄膜为非晶结构,其发光主要位于蓝绿波段。经900 ℃退火后,薄膜的结构由非晶变为多晶,且在近红外波段观测到了来源于Cr3+掺杂的发光。退火后的薄膜结晶质量和近红外发光均与氧气流量密切相关,而其光学带隙不受氧气流量的影响。在所研究的氧气流量范围,4 mL/min氧气流量下薄膜的近红外发光强度最强,这与此条件下薄膜结晶质量较好以及Cr3+替代Ga3+的数量较多有关。以上研究成果可为制备高质量Ga2O3∶Cr薄膜提供参考。
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| 关 键 词： | Ga2O3∶Cr薄膜 射频磁控溅射 蓝宝石基底 氧气流量 退火 光学性能 结晶质量 |
| 收稿时间： | 2022-04-13 |
Influence of Oxygen Flow Rate on the Photoluminescence Properties of Ga2O3∶Cr Thin Films Prepared by RF Magnetron Sputtering |
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| ZHAO Xin,LIU Fenhong,ZHANG Xiaodong,LIU Changlong.Influence of Oxygen Flow Rate on the Photoluminescence Properties of Ga2O3∶Cr Thin Films Prepared by RF Magnetron Sputtering[J].Journal of Synthetic Crystals,2022,51(8):1353-1360. |
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| Authors: | ZHAO Xin LIU Fenhong ZHANG Xiaodong LIU Changlong |
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| Affiliation: | 1. School of Science, Tianjin University, Tianjin 300354, China;2. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Tianjin 300350, China |
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| Abstract: | Cr-doped Ga2O3(Ga2O3∶Cr) thin films were deposited on sapphire (α-Al2O3) substrates by dual-target RF magnetron co-sputtering at different oxygen flow rates. Structures and optical properties of the deposited Ga2O3∶Cr thin films were investigated in detail before and after annealing at 900 ℃. The results clearly reveal that the deposited Ga2O3∶Cr thin films are amorphous, and their luminescence mainly appear in the blue-green band. The structures transform from amorphous into polycrystalline after 900 ℃ annealing, and near-infrared luminescence band originated from the doping Cr3+ is well observed. Both the crystalline quality and near-infrared luminescence intensity of the annealed films show strong dependence on oxygen flow rates, while their optical band gaps keep almost unchanged. Moreover, in the range of oxygen flow rates, it has been demonstrated that the Ga2O3∶Cr thin film with the strongest near-infrared luminescence intensity could be obtained under the oxygen flow rate of 4 mL/min. In such case, the obtained film has the better crystalline quality and the amount of Cr3+ substituted Ga3+ is relatively large. This findings could be helpful for preparing Ga2O3∶Cr thin films with better quality. |
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| Keywords: | Ga2O3∶Cr thin film RF magnetron sputtering sapphire substrate oxygen flow rate annealing optical property crystalline quality |
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