| SiN_X覆盖层厚度对非晶In-Ga-Zn-O薄膜退火晶化的影响研究 |
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| 引用本文： | 胡浩威,井津域,李钦,宋忠孝.SiN_X覆盖层厚度对非晶In-Ga-Zn-O薄膜退火晶化的影响研究[J].人工晶体学报,2019,48(5):907-912. |
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| 作者姓名： | 胡浩威 井津域 李钦 宋忠孝 |
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| 作者单位： | 安徽建筑大学环境与能源工程学院,合肥,230601;西安交通大学,材料强度国家重点实验室,西安 710049;安徽建筑大学材料与化学工程学院,合肥,230601 |
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| 基金项目： | 安徽省自然科学基金青年基金(1808085QE164) |
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| 摘 要： | 采用射频磁控溅射在二氧化硅衬底上沉积一层厚度200nm的非晶In-Ga-Zn-O(IGZO)薄膜,并在IGZO膜层上沉积厚度分别为20nm、50nm、60nm、70nm、90nm的SiNX薄膜覆盖层,于350℃条件下N2气氛中退火1h。采用X射线衍射(XRD)、高分辨透射电子显微镜(HRTEM)、能量色散谱仪(EDS)对IGZO薄膜的微观结构及成分进行研究。研究结果表明,退火后无覆盖层的IGZO膜层仍为非晶状态,70nm以上SiNX覆盖层下的IGZO薄膜不发生晶化。与此不同,20~60nm的SiNX覆盖层下IGZO膜层与SiNX覆盖层的界面处存在纳米凸起柱,使IGZO薄膜与SiNX覆盖层的接触界面脱离,此厚度的SiNX覆盖层具有诱导非晶IGZO薄膜晶化的作用,IGZO膜层内部的晶粒直径约10nm。成分分析结果表明,结晶处In原子含量增加,IGZO薄膜中In原子的局域团聚是IGZO薄膜发生晶化的原因。
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| 关 键 词： | 非晶IGZO薄膜 退火晶化 N2退火 SINX |
Annealing Crystallization Characteristics of Amorphous In-Ga-Zn-O Films Induced by SiNX Capping Layers |
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| HU Hao-wei,JING Jin-yu,LI Qin,SONG Zhong-xiao.Annealing Crystallization Characteristics of Amorphous In-Ga-Zn-O Films Induced by SiNX Capping Layers[J].Journal of Synthetic Crystals,2019,48(5):907-912. |
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| Authors: | HU Hao-wei JING Jin-yu LI Qin SONG Zhong-xiao |
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| Affiliation: | (School of Environment and Energy Engineering,Anhui Jianzhu University,Hefei 230601,China;State Key Laboratory for Mechanical Behavior of Materials,Xi'an Jiaotong University,Xi'an 710049,China;School of Materials and Chemical Engineering,Anhui Jianzhu University,Hefei 230601,China) |
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| Abstract: | Amorphous In-Ga-Zn-O (IGZO) films were deposited on monocrystalline silicon wafers with silicon dioxides by Ratio-Frequency magnetron sputtering. SiNX capping layers with thicknesses of approximately 20 nm,50 nm,60 nm,70 nm,and 90 nm were deposited respectively on the prepared IGZO films with thicknesses of 200 nm. Then the samples were applied to annealing in N2 atmosphere at 350 ℃ for 1 h. The microstructure and composition of the IGZO thin films were experimentally investigated by X-ray diffraction (XRD),high-resolution transmission electron microscopy (HRTEM) and energy dispersive spectroscopy (EDS). The results reveal that IGZO thin film without capping SiNX layer stayed amorphous structure after annealing. It is found that SiNX capping layer with a thickness of 20-60 nm has an effect of inducing crystallization on amorphous IGZO thin film. Whereas,amorphous IGZO could not be induced to crystalline when the thickness of SiNX capping layer increases to 70 nm. HR-TEM results suggest that many nano convex-pillars exist in the interface between IGZO and SiNX layers,inducing a separation of the interface. The SiNX layers with the thicknesses of 20-60 nm have the effects of inducing crystallization of the amorphous IGZO film,and the grain size of the IGZO film layer is about 10 nm. EDS results declare that the aggregating of In atom in the local region dominates the crystallization of the IGZO thin film. |
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| Keywords: | amorphous IGZO thin film annealing crystallization N2 annealing SiNX |
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