首页 | 官方网站   微博 | 高级检索  
     


Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor
Authors:XU Cheng  LIU Bo  CHEN Yi-Feng  LIANG Shuang  SONG Zhi-Tang  FENG Song-Lin  WAN Xu-Dong  YANG Zuo-Ya  XIE Joseph  CHEN Bomy
Affiliation:Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 Graduate School of the Chinese Academy of Sciences, Beijing 100049Semiconductor Manufacturing International Corporation, Shanghai 201203Silicon Storage Technology Inc., 1171 Sonora Court, Sunnyvale, CA 94086, USA
Abstract:
Keywords:73  61  Jc  61  72  Uj  87  15  Zg  85  30  Tv
本文献已被 维普 等数据库收录!
点击此处可从《中国物理快报》浏览原始摘要信息
点击此处可从《中国物理快报》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号