| Vertical and Smooth, etching of InP by Cl2／CH4／Ar Inductively Coupled Plasma at Room Temperature |
| |
| 引用本文： | 孙长征,周进波,熊兵,王健,罗毅.Vertical and Smooth, etching of InP by Cl2／CH4／Ar Inductively Coupled Plasma at Room Temperature[J].中国物理快报,2003,20(8):1312-1314. |
| |
| 作者姓名： | 孙长征 周进波 熊兵 王健 罗毅 |
| |
| 作者单位： | DepartmentofElectronicEngineering,TsinghuaUniversity,Beijing100084 |
| |
| 摘 要： | We study the room-temperature dry, etching of InP by inductively coupled plasma (ICP) using C12/CH4/Ar mixtures. Etches were characterized in terms of anisotropy and surface roughness by scanning electron microscopy and atomic force microscopy, respectively. It is found that the flow ratio between C12 and Ctt4, ICP power, rf chuck power, and table temperature can greatly influence the, etching results. By adjusting, etching parameters,vertical sidewall and smooth surface can be obtained simultaneously, together with a moderate, etch rate and a good select ratio. The root-mean-square surface roughness is measured to be as low as 0.27nm. To the best of our knowledge, this is the best result for InP to date. The, etch rate is 855nm/min, and the selectivity ratio overSi02 is estimated to be higher than 15:1. The stoichiometry of the, etched surface has also been investigated by Auger electron spectroscopy. The, etched surface is found to manifest a slight P deficiency, and the ratio between P and In reaches the stoichiometric value within about 0.75nm depth into the surface.
|
| 关 键 词： | InP 室温 磷化铟 诱导连接等离子体 C12／CH4／Ar混合物 蚀刻 微制作技术 |
| 本文献已被 维普 等数据库收录！ |
|
