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AlGaN/GaN HEMTs on 4-Inch Silicon Substrates in the Presence of 2.7-μm -Thick Epilayers with the Maximum Off-State Breakdown Voltage of 500 V |
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| Authors: | YU Xin-Xin NI Jin-Yu LI Zhong-Hui KONG Cen ZHOU Jian-Jun DONG Xun PAN Lei KONG Yue-Chan CHEN Tang-Sheng |
| Affiliation: | Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 |
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