| Effect of Misfit Dislocation Originated from Strained Layer on Photoluminescence Properties of InxGa1-xN／GaN Multiple Quantum Wells |
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| 引用本文： | 吕威,黎大兵,李超荣,陈岗,张泽.Effect of Misfit Dislocation Originated from Strained Layer on Photoluminescence Properties of InxGa1-xN／GaN Multiple Quantum Wells[J].中国物理快报,2005,22(4):971-974. |
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| 作者姓名： | 吕威 黎大兵 李超荣 陈岗 张泽 |
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| 作者单位： | [1]DepartmentofMaterialsScience,CollegeofMaterialsScienceandEngineering,JilinUniversity,Changchun130012 [2]KeyLaboratoryofSemiconductorMaterialsScience,InstituteofSemiconductors,ChineseAcademyofSciences,POBox912,Beijing100083 [3]BeijingLaboratoryofElectronMicroscopy,InstituteofPhysics,ChineseAcademyofSciences,POBox603,Beijing100080 [4]BeijingUniversityofTechnology,Beijing100022 |
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| 摘 要： | Inx Ga1-x N/GaN multiple quantum well (MQW) samples with strain-layer thickness larger/less than the critical one are investigated by temperature-dependent photoluminescence and transmission electron microscopy, and double crystal x-ray diffraction. For the sample with the strained-layer thickness greater than the critical thickness, we observe a high density of threading dislocations generated at the MQW layers and extended to the cap layer. These dislocations result from relaxation of the strain layer when its thickness is beyond the critical thickness. For the sample with the strained-layer thickness greater than the critical thickness, temperature-dependent photoluminescence measurements give evidence that dislocations generated from the MQW layers due to strain relaxation are main reason of the poor photoluminescence property, and the dominating status change of the main peak with increasing temperature is attributed to the change of the radiative recombination from the areas including dislocations to the ones excluding dislocations.
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| 关 键 词： | 错配断层 有机效应 光激发光 加固层 氮化镓合金 量子井 |
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