| Effect of SiO2 Encapsulation on the Nitrogen Reorganization in a GaNAs／GaAs Single Quantum Well |
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| 引用本文： | 徐应强,张玮,牛智川,吴荣汉,王启明.Effect of SiO2 Encapsulation on the Nitrogen Reorganization in a GaNAs／GaAs Single Quantum Well[J].中国物理快报,2004,21(3):521-523. |
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| 作者姓名： | 徐应强 张玮 牛智川 吴荣汉 王启明 |
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| 作者单位： | StateKeyLaboratoryonIntegratedOptoelectronics,InstituteofSemiconductors,ChineseAcademyofSciences,POBox912,Beijing100083 |
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| 摘 要： | Effects of SiO2 encapsulation and rapid thermal annealing on the optical properties of a GaNAs/GaAs single quantum well (SQW) are studied by low-temperature photoluminescence (LTPL). After annealing at 800℃ for 30s, a blueshift of the LTPL peak energy for the SiO2-capped region is 25meV and that for the bare region is 0.8 meV. The results can attribute to the nitrogen reorganization in the GaNAs/GaAs SQW. It is also shown that the nitrogen reorganization can be obviously enhanced by SiO2 cap-layer. A simple model is used to describe the SiO2-enhanced blueshift of the LTPL peak energy. The estimated activation energy of the N atomic reorganization for the samples annealing with and without SiO2 cap-layer are 2.9eV and 3.1 eV, respectively.
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| 关 键 词： | 二氧化硅 单量子阱 砷化镓 砷氮镓 氮改组 半导体材料 低温光致发光 |
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