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Electrical Characteristics of InGaN/AlGaN and InGaN/GaN MQW Near UV-LEDs
作者姓名:穆森  于彤军  黄柳冰  贾传宇  潘尧波  杨志坚  陈志忠  秦志新  张国义
作者单位:State Key Laboratory of Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing 100871
基金项目:Supported by the National Natural Science Foundation of China under Grant Nos 60676032, 60577030, and 60476028, and the National Key Basic Research Special Foundation of China under Grant No TG 2007CB307004.
摘    要:Electrical characteristics of In0.05 Ga0.95N/Al0.07Ga0.9aN and In0.05 Ga0.95N/GaN multiple quantum well (MQW) ultraviolet light-emltting diodes (UV-LEDs) at 400hm wavelength are measured. It is found that for InGaN/AlGaN MQW LEDs, both ideality factor and parallel resistance are similar to those of InGaN/GaN MQW LEDs, while series resistance is two times larger. It is suggested that the Al0.07Ga0.93N barrier layer did not change crystal quality and electrical characteristic of p-n junction either, but brought larger series resistance. As a result, InGaN/AlGaN MQW LEDs suffer more serious thermal dissipation problem although they show higher light output efficiency.

关 键 词:电子特征  量子学  电子物理学  物理分析
收稿时间:2007-07-25

Electrical Characteristics of InGaN/AlGaN and InGaN/GaN MQW Near UV-LEDs
MU Sen,YU Tong-Jun,HUANG Liu-Bing,JIA Chuan-Yu,PAN Yao-Bo,YANG Zhi-Jian,CHEN Zhi-Zhong,QIN Zhi-Xin,ZHANG Guo-Yi.Electrical Characteristics of InGaN/AlGaN and InGaN/GaN MQW Near UV-LEDs[J].Chinese Physics Letters,2007,24(11):3245-3248.
Authors:MU Sen  YU Tong-Jun  HUANG Liu-Bing  JIA Chuan-Yu  PAN Yao-Bo  YANG Zhi-Jian  CHEN Zhi-Zhong  QIN Zhi-Xin  ZHANG Guo-Yi
Affiliation:State Key Laboratory of Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing 100871
Abstract:Electrical characteristics of In0.05Ga0.95N/Al0.07Ga0.93N and In0.05Ga0.95N/GaN multiple quantum well (MQW) ultraviolet light-emitting diodes (UV-LEDs) at 400nm wavelength are measured. It is found that for InGaN/AlGaN MQW LEDs, both ideality factor and parallel resistance are similar to those of InGaN/GaN MQW LEDs, while series resistance is two times larger. It is suggested that the Al0.07Ga0.93N barrier layer did not change crystal quality and electrical characteristic of p-n junction either, but brought larger series resistance. As a result, InGaN/AlGaN MQW LEDs suffer more serious thermal dissipation problem although they show higher light output efficiency.
Keywords:73  61  Ey  85  35  Be  85  60  Jb
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